公开(公告)号：US09305876B2

公开(公告)日：2016-04-05

申请号：US13757346

申请日：2013-02-01

申请人： Infineon Technologies Austria AG

发明人： Khalil Hosseini ,  Joachim Mahler

IPC分类号： H05K7/00 ,  H01L23/50 ,  H01L21/58 ,  H01L23/00 ,  H01L23/495 ,  H01L25/07

CPC分类号： H01L23/50 ,  H01L21/56 ,  H01L23/49531 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/2919 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48666 ,  H01L2224/48669 ,  H01L2224/48671 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48766 ,  H01L2224/48769 ,  H01L2224/48771 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48866 ,  H01L2224/48869 ,  H01L2224/48871 ,  H01L2224/4899 ,  H01L2224/4903 ,  H01L2224/4911 ,  H01L2224/49113 ,  H01L2924/07802 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01023 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/01014

摘要： A device includes a carrier, a first semiconductor chip arranged over the carrier and a first electrically conductive element arranged over the carrier. The device further includes a first wire electrically coupled to the first electrically conductive element and a second wire electrically coupled to the first electrically conductive element and to the first semiconductor chip. The first electrically conductive element is configured to forward an electrical signal between the first wire and the second wire.

摘要翻译： 装置包括载体，布置在载体上的第一半导体芯片和布置在载体上的第一导电元件。 该器件还包括电耦合到第一导电元件的第一线和电耦合到第一导电元件和第一半导体芯片的第二线。 第一导电元件被配置为在第一线和第二线之间转发电信号。

公开(公告)号：US08871630B2

公开(公告)日：2014-10-28

申请号：US13555614

申请日：2012-07-23

申请人： Ralf Otremba ,  Josef Hoeglauer

发明人： Ralf Otremba ,  Josef Hoeglauer

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/495 ,  H01L23/31 ,  H05K3/34 ,  H01L21/56 ,  H01L23/00 ,  H05K3/30

CPC分类号： H01L23/49551 ,  H01L21/561 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/18 ,  H01L24/19 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/82 ,  H01L24/97 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/18 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48666 ,  H01L2224/48669 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48766 ,  H01L2224/48769 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48866 ,  H01L2224/48871 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/76155 ,  H01L2224/82039 ,  H01L2224/82047 ,  H01L2224/82102 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H05K3/305 ,  H05K3/3442 ,  H05K3/3468 ,  H05K2201/10727 ,  H05K2203/0465 ,  Y02P70/613 ,  H01L2224/82 ,  H01L2924/01026 ,  H01L2924/00 ,  H01L2224/48869 ,  H01L2224/48744 ,  H01L2224/48771 ,  H01L2224/48671 ,  H01L2924/00012

摘要： An electronic device and manufacturing thereof. One embodiment provides a carrier and multiple contact elements. The carrier defines a first plane. A power semiconductor chip is attached to the carrier. A body is formed of an electrically insulating material covering the power semiconductor chip. The body defines a second plane parallel to the first plane and side faces extends from the first plane to the second plane. At least one of the multiple contact elements has a cross section in a direction orthogonal to the first plane that is longer than 60% of the distance between the first plane and the second plane.

摘要翻译： 电子设备及其制造。 一个实施例提供载体和多个接触元件。 载体定义第一平面。 功率半导体芯片附着在载体上。 主体由覆盖功率半导体芯片的电绝缘材料形成。 主体限定平行于第一平面的第二平面，侧面从第一平面延伸到第二平面。 多个接触元件中的至少一个在与第一平面正交的方向上具有长于第一平面和第二平面之间的距离的60％的横截面。

公开(公告)号：US08674462B2

公开(公告)日：2014-03-18

申请号：US11828085

申请日：2007-07-25

申请人： Ralf Wombacher ,  Horst Theuss

发明人： Ralf Wombacher ,  Horst Theuss

IPC分类号： H01L29/84 ,  H01L21/56 ,  H01L31/0203

CPC分类号： H01L23/291 ,  B81B7/0025 ,  H01L23/055 ,  H01L23/298 ,  H01L23/564 ,  H01L24/34 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/85 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/05669 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/48624 ,  H01L2224/48669 ,  H01L2224/48724 ,  H01L2224/48769 ,  H01L2224/48824 ,  H01L2224/48869 ,  H01L2224/73265 ,  H01L2224/8192 ,  H01L2224/81951 ,  H01L2224/83 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/8592 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/37099

摘要： A sensor package is disclosed. One embodiment provides a sensor device having a carrier, a semiconductor sensor mounted on the carrier and an active surface. Contact elements are electrically connecting the carrier with the semiconductor sensor. A protective layer made of an inorganic material covers at least the active surface and the contact elements.

摘要翻译： 公开了一种传感器封装。 一个实施例提供了一种具有载体，安装在载体上的半导体传感器和有源表面的传感器装置。 接触元件将载体与半导体传感器电连接。 由无机材料制成的保护层至少覆盖活性表面和接触元件。

公开(公告)号：US20140070235A1

公开(公告)日：2014-03-13

申请号：US13607217

申请日：2012-09-07

申请人： Peter Scott Andrews ,  Erin Welch ,  Andrew Signor ,  Christopher P. Hussell

发明人： Peter Scott Andrews ,  Erin Welch ,  Andrew Signor ,  Christopher P. Hussell

IPC分类号： H01L33/48

CPC分类号： H01L33/48 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L25/0753 ,  H01L33/486 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4809 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48464 ,  H01L2224/48511 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48666 ,  H01L2224/48669 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48766 ,  H01L2224/48769 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48866 ,  H01L2224/48869 ,  H01L2224/78301 ,  H01L2224/7855 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85203 ,  H01L2224/85207 ,  H01L2224/85947 ,  H01L2924/10155 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Improved wire bonds and light emitting devices and related methods are disclosed. In one aspect, an improved wire bond can include a shaped wire bond, where at least a portion of the wire bond includes a negative kink and/or a concave shape with respect to an underlying substrate.

摘要翻译： 公开了改进的引线键合和发光器件及相关方法。 在一个方面，改进的引线接合可以包括成形的引线键合，其中引线接合的至少一部分相对于下面的基底包括负扭结和/或凹形。

公开(公告)号：US20120193791A1

公开(公告)日：2012-08-02

申请号：US13500849

申请日：2010-10-07

申请人： Ryota Seno

发明人： Ryota Seno

IPC分类号： H01L23/49 ,  H01L21/60

CPC分类号： H01L24/85 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L25/0753 ,  H01L33/62 ,  H01L2224/05616 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45169 ,  H01L2224/4809 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48465 ,  H01L2224/48479 ,  H01L2224/48599 ,  H01L2224/48669 ,  H01L2224/48699 ,  H01L2224/48769 ,  H01L2224/48869 ,  H01L2224/4911 ,  H01L2224/49426 ,  H01L2224/49429 ,  H01L2224/78301 ,  H01L2224/85051 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85191 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85469 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20752 ,  H01L2224/48471 ,  H01L2924/00 ,  H01L2224/4554

摘要： Disclosed are: a semiconductor device that comprises a semiconductor element to which a plurality of wires are bonded, wherein bonding strength of the wires is high and sufficient bonding reliability is achieved; and a method for manufacturing the semiconductor device. Specifically disclosed is a semiconductor device which is characterized by comprising a first wire that has one end bonded onto an electrode and the other end bonded to a second bonding point that is out of the electrode, and a second wire that has one end bonded onto the first wire on the electrode and the other end bonded to a third bonding point that is out of the electrode. The semiconductor device is also characterized in that the bonded portion of the first-mentioned end of the second wire covers at least apart of the upper surface and the lateral surface of the first wire.

摘要翻译： 公开了一种半导体器件，其包括多个导线被接合的半导体元件，其中导线的接合强度高并且实现了足够的接合可靠性; 以及半导体装置的制造方法。 具体公开的是一种半导体器件，其特征在于，包括：第一导线，其一端接合到电极上，另一端接合到离开电极的第二接合点;以及第二导线，其一端接合到 电极上的第一线，另一端接合到离开电极的第三接合点。 所述半导体器件的特征还在于，所述第二线的所述第一端的接合部分至少覆盖所述第一线的上表面和所述侧表面。

公开(公告)号：US20090291554A1

公开(公告)日：2009-11-26

申请号：US12534885

申请日：2009-08-04

申请人： Mou-Shiung Lin ,  Chiu-Ming Chou

发明人： Mou-Shiung Lin ,  Chiu-Ming Chou

IPC分类号： H01L21/768

CPC分类号： H01L21/563 ,  H01L23/3114 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/86 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05166 ,  H01L2224/05553 ,  H01L2224/05568 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/0603 ,  H01L2224/06505 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/13023 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/13583 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13669 ,  H01L2224/13673 ,  H01L2224/13676 ,  H01L2224/13683 ,  H01L2224/14 ,  H01L2224/1403 ,  H01L2224/14505 ,  H01L2224/16145 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48673 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48769 ,  H01L2224/48773 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48873 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06586 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48869 ,  H01L2224/48744 ,  H01L2224/05552 ,  H01L2924/00012

摘要： A semiconductor chip includes a silicon substrate, a first dielectric layer over said silicon substrate, a metallization structure over said first dielectric layer, wherein said metallization structure comprises a first metal layer and a second metal layer over said first metal layer, a second dielectric layer between said first and second metal layers, a passivation layer over said metallization structure and over said first and second dielectric layers, an opening in said passivation layer exposing a pad of said metallization structure, a polymer bump over said passivation layer, wherein said polymer bump has a thickness of between 5 and 25 micrometers, an adhesion/barrier layer on said pad exposed by said opening, over said passivation layer and on a top surface and a portion of sidewall(s) of said polymer bump, a seed layer on said adhesion/barrier layer; and a third metal layer on said seed layer.

摘要翻译： 半导体芯片包括硅衬底，在所述硅衬底上的第一电介质层，在所述第一介电层上的金属化结构，其中所述金属化结构包括在所述第一金属层上的第一金属层和第二金属层，第二介电层 在所述第一和第二金属层之间的钝化层，在所述金属化结构之上并且在所述第一和第二介电层上方的钝化层，所述钝化层中的开口暴露所述金属化结构的焊盘，所述钝化层上的聚合物凸块，其中所述聚合物凸块 具有5至25微米的厚度，所述焊盘上的粘附/阻挡层，由所述开口暴露在所述钝化层上，所述聚合物凸块的顶表面和侧壁的一部分上，所述 粘合/阻隔层; 以及所述籽晶层上的第三金属层。

公开(公告)号：US07393772B2

公开(公告)日：2008-07-01

申请号：US11001871

申请日：2004-12-01

申请人： Robert J. Gleixner ,  Donald Danielson ,  Patrick M. Paluda ,  Rajan Naik

发明人： Robert J. Gleixner ,  Donald Danielson ,  Patrick M. Paluda ,  Rajan Naik

IPC分类号： H01L21/44

CPC分类号： H01L24/85 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05556 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48664 ,  H01L2224/48666 ,  H01L2224/48669 ,  H01L2224/48747 ,  H01L2224/48764 ,  H01L2224/48766 ,  H01L2224/48769 ,  H01L2224/85 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/05042 ,  H01L2924/14 ,  Y10T428/1291 ,  Y10T428/24248 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2224/48744

摘要： A wirebond structure includes a copper pad formed on or in a surface of a microelectronic die. A conductive layer is included in contact with the copper pad and a bond wire is bonded to the conductive layer. The conductive layer is formed of a material to provide a stable contact between the bond wire and the copper pad in at least one of an oxidizing environment and an environment with temperatures up to at least about 350° C.

摘要翻译： 引线键合结构包括形成在微电子管芯的表面上或其中的铜焊盘。 导电层被包括在与铜焊盘接触的位置，并且接合线接合到导电层。 导电层由材料形成，以在氧化环境和温度高达至少约350℃的环境中的至少一个中提供接合线和铜焊盘之间的稳定接触。

公开(公告)号：US20080042280A1

公开(公告)日：2008-02-21

申请号：US11769736

申请日：2007-06-28

申请人： Mou-Shiung Lin ,  Jin-Yuan Lee

发明人： Mou-Shiung Lin ,  Jin-Yuan Lee

IPC分类号： H01L23/48

CPC分类号： H01L24/11 ,  H01L23/5227 ,  H01L23/53238 ,  H01L23/53252 ,  H01L24/05 ,  H01L24/06 ,  H01L24/12 ,  H01L24/16 ,  H01L24/28 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05084 ,  H01L2224/05553 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/1147 ,  H01L2224/1308 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/13171 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13181 ,  H01L2224/13183 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48463 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48769 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/73204 ,  H01L2224/838 ,  H01L2224/85201 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/01032 ,  H01L2924/01031 ,  H01L2224/48869 ,  H01L2224/48744 ,  H01L2224/05552

摘要： A semiconductor chip structure includes a semiconductor substrate, an circuit structure, a passivation layer, a first adhesion/barrier layer, a metal cap and a metal layer. The semiconductor substrate has multiple electric devices located on a surface layer of a surface of the substrate. The circuit structure had multiple circuit layers electrically connecting with each other and electrically connecting with the electric devices. One of the circuit layers has multiple pads. The passivation layer is located on the circuit structure and has multiple openings penetrating through the passivation layer. The openings expose the pads. The first adhesion/barrier layer is over the pads and the passivation layer. The metal cap is located on the first adhesion/barrier layer and the passivation layer. The metal layer is on the metal layer.

摘要翻译： 半导体芯片结构包括半导体衬底，电路结构，钝化层，第一粘附/阻挡层，金属帽和金属层。 半导体衬底具有位于衬底表面的表面层上的多个电子器件。 电路结构具有彼此电连接并与电气装置电连接的多个电路层。 其中一个电路层具有多个焊盘。 钝化层位于电路结构上，具有贯穿钝化层的多个开口。 开口露出垫。 第一粘附/阻挡层在焊盘和钝化层之上。 金属盖位于第一粘附/阻挡层和钝化层上。 金属层在金属层上。

公开(公告)号：US20060292752A1

公开(公告)日：2006-12-28

申请号：US11511005

申请日：2006-08-28

申请人： Mike Connell ,  Tongbi Jiang

发明人： Mike Connell ,  Tongbi Jiang

IPC分类号： H01L21/50

CPC分类号： H01L24/48 ,  H01L21/561 ,  H01L21/565 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/13 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/4951 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/49 ,  H01L24/83 ,  H01L24/85 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05073 ,  H01L2224/05111 ,  H01L2224/05118 ,  H01L2224/05155 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/06135 ,  H01L2224/06136 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/274 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/45111 ,  H01L2224/45118 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45164 ,  H01L2224/45169 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48472 ,  H01L2224/48479 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48666 ,  H01L2224/48669 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48766 ,  H01L2224/48769 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48866 ,  H01L2224/4943 ,  H01L2224/73215 ,  H01L2224/83101 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2224/85444 ,  H01L2224/92 ,  H01L2224/92147 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06555 ,  H01L2225/06558 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/107 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/07025 ,  H01L2924/0635 ,  H01L2924/00 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2224/48824 ,  H01L2224/48869 ,  H01L2224/48744 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2924/20754 ,  H01L2224/45099 ,  H01L2224/4554

摘要： A method for fabricating a BOC package includes the steps of providing a semiconductor die having planarized bumps encapsulated in a polymer layer, and providing a substrate having a plurality of conductors and an opening. The method also includes the steps of attaching the die to the substrate in a BOC configuration, wire bonding wires through the opening to the conductors and the bumps, and forming a die encapsulant on the die.

公开(公告)号：US20040192019A1

公开(公告)日：2004-09-30

申请号：US10818081

申请日：2004-04-05

申请人： Intel Corporation

发明人： Krishna Seshan ,  Kuljeet Singh

IPC分类号： H01L021/44 ,  H01L021/4763

CPC分类号： H01L24/48 ,  H01L22/32 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/0392 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05184 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/4807 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48669 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48769 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2224/48744

摘要： The present invention relates to a device that includes a low-ohmic test. The device includes a metallization copper pad such as metal-six, a metal first film such as Ni that is disposed above the metallization copper pad, and a metal second film such as Au that is disposed above the metal first film. The present invention also relates to a wire-bonding process, and to a method of pulling a first wire bond and making a second wire bond.

摘要翻译： 本发明涉及一种包括低电阻测试的器件。 该装置包括诸如金属六的金属化铜焊盘，设置在金属化铜焊盘上方的诸如Ni的金属第一膜以及设置在金属第一膜上方的诸如Au的金属第二膜。 本发明还涉及引线接合工艺，以及牵引第一引线接合和进行第二引线接合的方法。