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    Semiconductor memory having test function for refresh operation
    1.
    发明授权
    Semiconductor memory having test function for refresh operation 有权
    半导体存储器具有刷新操作的测试功能

    公开(公告)号：US07114025B2

    公开(公告)日：2006-09-26

    申请号：US10689486

    申请日：2003-10-21

    申请人： Tatsuya Kanda ,  Akihiro Funyu ,  Takahiko Sato ,  Yoshiaki Okuyama ,  Jun Ohno ,  Hitoshi Ikeda

    发明人： Tatsuya Kanda ,  Akihiro Funyu ,  Takahiko Sato ,  Yoshiaki Okuyama ,  Jun Ohno ,  Hitoshi Ikeda

    IPC分类号： G11C7/00 ,  G06F13/00

    CPC分类号： G11C11/406 ,  G11C11/401 ,  G11C11/40603 ,  G11C29/02 ,  G11C29/028 ,  G11C29/50 ,  G11C29/50016

    摘要： A semiconductor memory includes a refresh timer and an arbiter for determining the order of precedence between an access operation and a refresh operation, in order to automatically perform refresh operations inside the memory. A detecting circuit operates in a test mode and outputs a detection signal indicating that the refresh operation is yet to be performed, when a new internal refresh request occurs before the refresh operation is performed. For example, the detection signal is output when the interval of access requests is short and no refresh operation can be inserted between the access operations. That is, in the semiconductor memory in which refresh operations are performed automatically, it is possible to evaluate the minimum interval of supplying access requests. As a result, the evaluation time can be reduced with a reduction in the development period of the semiconductor memory.

    摘要翻译： 半导体存储器包括刷新定时器和用于确定访问操作和刷新操作之间的优先级顺序的仲裁器，以便自动执行存储器内的刷新操作。 检测电路在测试模式下工作，并且在执行刷新操作之前发生新的内部刷新请求时，输出指示刷新操作尚未执行的检测信号。 例如，当访问请求的间隔短并且在访问操作之间不能插入刷新操作时，输出检测信号。 也就是说，在自动执行刷新操作的半导体存储器中，可以评估提供访问请求的最小间隔。 结果，随着半导体存储器的显影周期的减少，可以减少评估时间。

    Semiconductor memory
    2.
    发明授权
    Semiconductor memory 失效
    半导体存储器

    公开(公告)号：US07471585B2

    公开(公告)日：2008-12-30

    申请号：US11508917

    申请日：2006-08-24

    申请人： Naoharu Shinozaki ,  Tatsuya Kanda ,  Takahiko Sato ,  Akihiro Funyu

    发明人： Naoharu Shinozaki ,  Tatsuya Kanda ,  Takahiko Sato ,  Akihiro Funyu

    IPC分类号： G11C7/00

    CPC分类号： G11C29/028 ,  G11C11/401 ,  G11C11/406 ,  G11C11/40603 ,  G11C29/02 ,  G11C29/50012 ,  G11C29/50016 ,  G11C2029/0403 ,  G11C2211/4061

    摘要： A refresh signal is output in response to a refresh request generated at predetermined cycles, and a refresh operation is performed. The refresh operation ends when a conflict occurs between an access request and the refresh request. Consequently, an access operation corresponding to the access request can be started earlier with a reduction in access time. The access time can be reduced further by changing the end time of the refresh operation in accordance with the timing of supply of the access request. Since a test circuit for notifying the state of the refresh operation to exterior is formed, the operation margin of the refresh operation can be evaluated in a short time. As a result, it is possible to reduce the development period of the semiconductor memory.

    摘要翻译： 响应于以预定周期产生的刷新请求输出刷新信号，并执行刷新操作。 刷新操作在访问请求与刷新请求之间发生冲突时结束。 因此，与访问请求相对应的访问操作可以随着访问时间的减少而更早地启动。 可以根据访问请求的提供时间改变刷新操作的结束时间，进一步减少访问时间。 由于形成用于将刷新操作的状态通知给外部的测试电路，因此可以在短时间内评估刷新操作的操作余量。 结果，可以减少半导体存储器的显影周期。

    Semiconductor memory
    3.
    发明授权
    Semiconductor memory 有权
    半导体存储器

    公开(公告)号：US07113441B2

    公开(公告)日：2006-09-26

    申请号：US11057841

    申请日：2005-02-15

    申请人： Naoharu Shinozaki ,  Tatsuya Kanda ,  Takahiko Sato ,  Akihiro Funyu

    发明人： Naoharu Shinozaki ,  Tatsuya Kanda ,  Takahiko Sato ,  Akihiro Funyu

    IPC分类号： G11C7/00

    CPC分类号： G11C29/028 ,  G11C11/401 ,  G11C11/406 ,  G11C11/40603 ,  G11C29/02 ,  G11C29/50012 ,  G11C29/50016 ,  G11C2029/0403 ,  G11C2211/4061

    摘要： A refresh signal is output in response to a refresh request generated at predetermined cycles, and a refresh operation is performed. The refresh operation ends when a conflict occurs between an access request and the refresh request. Consequently, an access operation corresponding to the access request can be started earlier with a reduction in access time. The access time can be reduced further by changing the end time of the refresh operation in accordance with the timing of supply of the access request. Since a test circuit for notifying the state of the refresh operation to exterior is formed, the operation margin of the refresh operation can be evaluated in a short time. As a result, it is possible to reduce the development period of the semiconductor memory.

    摘要翻译： 响应于以预定周期产生的刷新请求输出刷新信号，并执行刷新操作。 刷新操作在访问请求与刷新请求之间发生冲突时结束。 因此，与访问请求相对应的访问操作可以随着访问时间的减少而更早地启动。 可以根据访问请求的提供时间改变刷新操作的结束时间，进一步减少访问时间。 由于形成用于将刷新操作的状态通知给外部的测试电路，因此可以在短时间内评估刷新操作的操作余量。 结果，可以减少半导体存储器的显影周期。

    Semiconductor memory
    4.
    发明申请
    Semiconductor memory 有权
    半导体存储器

    公开(公告)号：US20050146968A1

    公开(公告)日：2005-07-07

    申请号：US11057841

    申请日：2005-02-15

    申请人： Naoharu Shinozaki ,  Tatsuya Kanda ,  Takahiko Sato ,  Akihiro Funyu

    发明人： Naoharu Shinozaki ,  Tatsuya Kanda ,  Takahiko Sato ,  Akihiro Funyu

    IPC分类号： G11C7/00 ,  G11C11/406 ,  G11C29/02

    CPC分类号： G11C29/028 ,  G11C11/401 ,  G11C11/406 ,  G11C11/40603 ,  G11C29/02 ,  G11C29/50012 ,  G11C29/50016 ,  G11C2029/0403 ,  G11C2211/4061

    摘要： A refresh signal is output in response to a refresh request generated at predetermined cycles, and a refresh operation is performed. The refresh operation ends when a conflict occurs between an access request and the refresh request. Consequently, an access operation corresponding to the access request can be started earlier with a reduction in access time. The access time can be reduced further by changing the end time of the refresh operation in accordance with the timing of supply of the access request. Since a test circuit for notifying the state of the refresh operation to exterior is formed, the operation margin of the refresh operation can be evaluated in a short time. As a result, it is possible to reduce the development period of the semiconductor memory.

    摘要翻译： 响应于以预定周期产生的刷新请求输出刷新信号，并执行刷新操作。 刷新操作在访问请求与刷新请求之间发生冲突时结束。 因此，与访问请求相对应的访问操作可以随着访问时间的减少而更早地启动。 可以根据访问请求的提供时间改变刷新操作的结束时间，进一步减少访问时间。 由于形成用于将刷新操作的状态通知给外部的测试电路，因此可以在短时间内评估刷新操作的操作余量。 结果，可以减少半导体存储器的显影周期。

    Semiconductor memory device
    6.
    发明授权
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号：US06396758B2

    公开(公告)日：2002-05-28

    申请号：US09793603

    申请日：2001-02-27

    申请人： Hitoshi Ikeda ,  Tatsuya Kanda ,  Yoshitaka Takahashi ,  Shinya Fujioka ,  Akihiro Funyu

    发明人： Hitoshi Ikeda ,  Tatsuya Kanda ,  Yoshitaka Takahashi ,  Shinya Fujioka ,  Akihiro Funyu

    IPC分类号： G11C700

    CPC分类号： G11C11/406

    摘要： A semiconductor memory device having a self-refresh operation includes a detection circuit generating a detection signal when detecting a change of a given input signal, and a comparator circuit comparing the detection signal with a refresh request signal internally generated and generating a control signal indicative of a circuit operation.

    摘要翻译： 具有自刷新操作的半导体存储器件包括检测电路，当检测到给定输入信号的变化时产生检测信号;以及比较器电路，将检测信号与内部产生的刷新请求信号进行比较，并生成表示 电路操作。

    Semiconductor memory device having a self-refresh operation
    7.
    发明授权
    Semiconductor memory device having a self-refresh operation 失效
    具有自刷新操作的半导体存储器件

    公开(公告)号：US06404688B2

    公开(公告)日：2002-06-11

    申请号：US09791839

    申请日：2001-02-26

    申请人： Yoshiaki Okuyama ,  Yoshitaka Takahashi ,  Shinya Fujioka ,  Akihiro Funyu

    发明人： Yoshiaki Okuyama ,  Yoshitaka Takahashi ,  Shinya Fujioka ,  Akihiro Funyu

    IPC分类号： G11C700

    CPC分类号： G11C11/406 ,  G11C7/1045

    摘要： A semiconductor memory device having a self-refresh operation includes a first circuit generating a first signal that specifies a first self-refresh cycle by a non-volatile circuit element provided in the semiconductor memory device, a second circuit receiving a second signal that specifies a second self-refresh cycle via a terminal that is used in common to another signal, and a third circuit generating a pulse signal having one of the first and second self-refresh cycles, the pulse signal being related to the self-refresh operation.

    摘要翻译： 具有自刷新操作的半导体存储器件包括：第一电路，产生由设置在半导体存储器件中的非易失性电路元件指定第一自刷新周期的第一信号;第二电路，接收指定第 第二自刷新周期经由与另一信号共同使用的端子，以及第三电路，产生具有第一和第二自刷新周期中的一个的脉冲信号，所述脉冲信号与自刷新操作相关。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08111575B2

    公开(公告)日：2012-02-07

    申请号：US12684652

    申请日：2010-01-08

    申请人： Kaoru Mori ,  Shinya Fujioka ,  Yoshitaka Takahashi ,  Jun Ohno ,  Akihiro Funyu ,  Shinichiro Suzuki

    发明人： Kaoru Mori ,  Shinya Fujioka ,  Yoshitaka Takahashi ,  Jun Ohno ,  Akihiro Funyu ,  Shinichiro Suzuki

    IPC分类号： G11C5/14

    CPC分类号： G11C7/04 ,  G11C11/406 ,  G11C11/40626 ,  G11C11/4072 ,  G11C11/4074

    摘要： There is provided a semiconductor device including: a temperature sensor detecting temperature; an inner circuit operating when supplied with a power supply voltage from a power supply line; a switch connected between the power supply line and the inner circuit; and a control circuit performing control in which, in a case where the temperature detected by the temperature sensor is higher than a threshold value, the switch is turned on when the inner circuit is in operation and the switch is turned off when the inner circuit is in non-operation, and in a case where the temperature detected by the temperature sensor is lower than the threshold value, the switch is turned on when the inner circuit is in operation and in non-operation.

    摘要翻译： 提供了一种半导体器件，包括：温度传感器检测温度; 当从电源线供给电源电压时工作的内部电路; 连接在电源线和内部电路之间的开关; 以及控制电路，其进行控制，其中，在由所述温度传感器检测到的温度高于阈值的情况下，当所述内部电路工作时所述开关接通，并且当所述内部电路为 在不工作的情况下，并且在由温度传感器检测到的温度低于阈值的情况下，当内部电路运行并且不工作时，开关导通。

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20100110818A1

    公开(公告)日：2010-05-06

    申请号：US12684652

    申请日：2010-01-08

    申请人： Kaoru MORI ,  Shinya Fujioka ,  Yoshitaka Takahashi ,  Jun Ohno ,  Akihiro Funyu ,  Shinichiro Suzuki

    发明人： Kaoru MORI ,  Shinya Fujioka ,  Yoshitaka Takahashi ,  Jun Ohno ,  Akihiro Funyu ,  Shinichiro Suzuki

    IPC分类号： G11C7/00 ,  H03K17/00 ,  H03K17/56 ,  G11C8/00

    CPC分类号： G11C7/04 ,  G11C11/406 ,  G11C11/40626 ,  G11C11/4072 ,  G11C11/4074

    摘要： There is provided a semiconductor device including: a temperature sensor detecting temperature; an inner circuit operating when supplied with a power supply voltage from a power supply line; a switch connected between the power supply line and the inner circuit; and a control circuit performing control in which, in a case where the temperature detected by the temperature sensor is higher than a threshold value, the switch is turned on when the inner circuit is in operation and the switch is turned off when the inner circuit is in non-operation, and in a case where the temperature detected by the temperature sensor is lower than the threshold value, the switch is turned on when the inner circuit is in operation and in non-operation.

    摘要翻译： 提供了一种半导体器件，包括：温度传感器检测温度; 当从电源线供给电源电压时工作的内部电路; 连接在电源线和内部电路之间的开关; 以及控制电路，其进行控制，其中，在由所述温度传感器检测到的温度高于阈值的情况下，当所述内部电路工作时所述开关接通，并且当所述内部电路为 在不工作的情况下，并且在由温度传感器检测到的温度低于阈值的情况下，当内部电路运行并且不工作时，开关导通。