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    Semiconductor memory device having an SRAM and a DRAM on a single chip
    3.
    发明授权
    Semiconductor memory device having an SRAM and a DRAM on a single chip 失效
    在单个芯片上具有SRAM和DRAM的半导体存储器件

    公开(公告)号：US06735141B2

    公开(公告)日：2004-05-11

    申请号：US09917913

    申请日：2001-07-31

    申请人： Hitoshi Ikeda ,  Akihiro Funyu ,  Shinya Fujioka ,  Takaaki Suzuki ,  Masao Taguchi ,  Kimiaki Satoh ,  Kotoku Sato

    发明人： Hitoshi Ikeda ,  Akihiro Funyu ,  Shinya Fujioka ,  Takaaki Suzuki ,  Masao Taguchi ,  Kimiaki Satoh ,  Kotoku Sato

    IPC分类号： G11C700

    CPC分类号： G11C11/005

    摘要： A semiconductor memory device includes an SRAM provided on a chip, the SRAM including an SRAM cell array. A DRAM is provided on the chip, the DRAM including a DRAM cell array. An address input circuit receives an address signal, the address signal having a first portion and a second portion, the first portion carrying a unique value of row-column address information provided to access one of memory locations in one of the SRAM and DRAM cell arrays, the second portion carrying a unique value of SRAM/DRAM address information provided to select one of the SRAM and the DRAM.

    摘要翻译： 半导体存储器件包括设置在芯片上的SRAM，SRAM包括SRAM单元阵列。 在芯片上提供DRAM，DRAM包括DRAM单元阵列。 地址输入电路接收地址信号，地址信号具有第一部分和第二部分，第一部分承载提供用于访问SRAM和DRAM单元阵列之一中的存储单元之一的行列地址信息的唯一值 ，第二部分承载提供用于选择SRAM和DRAM之一的SRAM / DRAM地址信息的唯一值。

    Semiconductor memory device having an SRAM and a DRAM on a single chip
    4.
    发明授权
    Semiconductor memory device having an SRAM and a DRAM on a single chip 失效
    在单个芯片上具有SRAM和DRAM的半导体存储器件

    公开(公告)号：US06292426B1

    公开(公告)日：2001-09-18

    申请号：US09531498

    申请日：2000-03-21

    申请人： Hitoshi Ikeda ,  Akihiro Funyu ,  Shinya Fujioka ,  Takaaki Suzuki ,  Masao Taguchi ,  Kimiaki Satoh ,  Kotoku Sato

    发明人： Hitoshi Ikeda ,  Akihiro Funyu ,  Shinya Fujioka ,  Takaaki Suzuki ,  Masao Taguchi ,  Kimiaki Satoh ,  Kotoku Sato

    IPC分类号： G11C800

    CPC分类号： G11C11/005

    摘要： A semiconductor memory device includes an SRAM provided on a chip, the SRAM including an SRAM cell array. A DRAM is provided on the chip, the DRAM including a DRAM cell array. An address input circuit receives an address signal, the address signal having a first portion and a second portion, the first portion carrying a unique value of row-column address information provided to access one of memory locations in one of the SRAM and DRAM cell arrays, the second portion carrying a unique value of SRAM/DRAM address information provided to select one of the SRAM and the DRAM.

    摘要翻译： 半导体存储器件包括设置在芯片上的SRAM，SRAM包括SRAM单元阵列。 在芯片上提供DRAM，DRAM包括DRAM单元阵列。 地址输入电路接收地址信号，地址信号具有第一部分和第二部分，第一部分承载提供用于访问SRAM和DRAM单元阵列之一中的存储单元之一的行列地址信息的唯一值 ，第二部分承载提供用于选择SRAM和DRAM之一的SRAM / DRAM地址信息的唯一值。

    Semiconductor memory device
    5.
    发明授权
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号：US06396758B2

    公开(公告)日：2002-05-28

    申请号：US09793603

    申请日：2001-02-27

    申请人： Hitoshi Ikeda ,  Tatsuya Kanda ,  Yoshitaka Takahashi ,  Shinya Fujioka ,  Akihiro Funyu

    发明人： Hitoshi Ikeda ,  Tatsuya Kanda ,  Yoshitaka Takahashi ,  Shinya Fujioka ,  Akihiro Funyu

    IPC分类号： G11C700

    CPC分类号： G11C11/406

    摘要： A semiconductor memory device having a self-refresh operation includes a detection circuit generating a detection signal when detecting a change of a given input signal, and a comparator circuit comparing the detection signal with a refresh request signal internally generated and generating a control signal indicative of a circuit operation.

    摘要翻译： 具有自刷新操作的半导体存储器件包括检测电路，当检测到给定输入信号的变化时产生检测信号;以及比较器电路，将检测信号与内部产生的刷新请求信号进行比较，并生成表示 电路操作。

    Semiconductor integrated circuit and method for controlling the same
    6.
    发明授权
    Semiconductor integrated circuit and method for controlling the same 有权
    半导体集成电路及其控制方法

    公开(公告)号：US06353561B1

    公开(公告)日：2002-03-05

    申请号：US09397845

    申请日：1999-09-17

    申请人： Akihiro Funyu ,  Shinya Fujioka ,  Yasuharu Sato ,  Toshiya Uchida

    发明人： Akihiro Funyu ,  Shinya Fujioka ,  Yasuharu Sato ,  Toshiya Uchida

    IPC分类号： G11C700

    CPC分类号： G11C7/109 ,  G11C7/1006 ,  G11C7/1072 ,  G11C7/1078 ,  G11C11/4093

    摘要： A semiconductor memory device, such as a synchronous DRAM, receives external commands and an external clock signal via input buffers. The device generates internal clock signals having a slower frequency than the external clock signal and uses the internal clock signals to acquire the external command. This allows more than one external command to be acquired for each cycle of the external clock. The acquired external commands are provided to command decoders for decoding. A mask circuit is connected to the decoder circuits and inhibits the decoding circuits, except for a first one of the decoding circuits, from decoding the external commands for a predetermined time period, when the first decoder circuit is decoding the external commands.

    摘要翻译： 诸如同步DRAM的半导体存储器件经由输入缓冲器接收外部命令和外部时钟信号。 该器件产生的频率低于外部时钟信号的内部时钟信号，并使用内部时钟信号来获取外部命令。 这允许在外部时钟的每个周期获取多于一个外部命令。 获取的外部命令被提供给命令解码器进行解码。 当第一解码器电路解码外部命令时，掩码电路连接到解码器电路，并且禁止解码电路以外的第一解码电路在预定时间段内解码外部命令。

    Semiconductor device
    7.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08111575B2

    公开(公告)日：2012-02-07

    申请号：US12684652

    申请日：2010-01-08

    申请人： Kaoru Mori ,  Shinya Fujioka ,  Yoshitaka Takahashi ,  Jun Ohno ,  Akihiro Funyu ,  Shinichiro Suzuki

    发明人： Kaoru Mori ,  Shinya Fujioka ,  Yoshitaka Takahashi ,  Jun Ohno ,  Akihiro Funyu ,  Shinichiro Suzuki

    IPC分类号： G11C5/14

    CPC分类号： G11C7/04 ,  G11C11/406 ,  G11C11/40626 ,  G11C11/4072 ,  G11C11/4074

    摘要： There is provided a semiconductor device including: a temperature sensor detecting temperature; an inner circuit operating when supplied with a power supply voltage from a power supply line; a switch connected between the power supply line and the inner circuit; and a control circuit performing control in which, in a case where the temperature detected by the temperature sensor is higher than a threshold value, the switch is turned on when the inner circuit is in operation and the switch is turned off when the inner circuit is in non-operation, and in a case where the temperature detected by the temperature sensor is lower than the threshold value, the switch is turned on when the inner circuit is in operation and in non-operation.

    摘要翻译： 提供了一种半导体器件，包括：温度传感器检测温度; 当从电源线供给电源电压时工作的内部电路; 连接在电源线和内部电路之间的开关; 以及控制电路，其进行控制，其中，在由所述温度传感器检测到的温度高于阈值的情况下，当所述内部电路工作时所述开关接通，并且当所述内部电路为 在不工作的情况下，并且在由温度传感器检测到的温度低于阈值的情况下，当内部电路运行并且不工作时，开关导通。

    SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20100110818A1

    公开(公告)日：2010-05-06

    申请号：US12684652

    申请日：2010-01-08

    申请人： Kaoru MORI ,  Shinya Fujioka ,  Yoshitaka Takahashi ,  Jun Ohno ,  Akihiro Funyu ,  Shinichiro Suzuki

    发明人： Kaoru MORI ,  Shinya Fujioka ,  Yoshitaka Takahashi ,  Jun Ohno ,  Akihiro Funyu ,  Shinichiro Suzuki

    IPC分类号： G11C7/00 ,  H03K17/00 ,  H03K17/56 ,  G11C8/00

    CPC分类号： G11C7/04 ,  G11C11/406 ,  G11C11/40626 ,  G11C11/4072 ,  G11C11/4074

    摘要： There is provided a semiconductor device including: a temperature sensor detecting temperature; an inner circuit operating when supplied with a power supply voltage from a power supply line; a switch connected between the power supply line and the inner circuit; and a control circuit performing control in which, in a case where the temperature detected by the temperature sensor is higher than a threshold value, the switch is turned on when the inner circuit is in operation and the switch is turned off when the inner circuit is in non-operation, and in a case where the temperature detected by the temperature sensor is lower than the threshold value, the switch is turned on when the inner circuit is in operation and in non-operation.

    摘要翻译： 提供了一种半导体器件，包括：温度传感器检测温度; 当从电源线供给电源电压时工作的内部电路; 连接在电源线和内部电路之间的开关; 以及控制电路，其进行控制，其中，在由所述温度传感器检测到的温度高于阈值的情况下，当所述内部电路工作时所述开关接通，并且当所述内部电路为 在不工作的情况下，并且在由温度传感器检测到的温度低于阈值的情况下，当内部电路运行并且不工作时，开关导通。

    Semiconductor memory device having a self-refresh operation
    9.
    发明授权
    Semiconductor memory device having a self-refresh operation 失效
    具有自刷新操作的半导体存储器件

    公开(公告)号：US06404688B2

    公开(公告)日：2002-06-11

    申请号：US09791839

    申请日：2001-02-26

    申请人： Yoshiaki Okuyama ,  Yoshitaka Takahashi ,  Shinya Fujioka ,  Akihiro Funyu

    发明人： Yoshiaki Okuyama ,  Yoshitaka Takahashi ,  Shinya Fujioka ,  Akihiro Funyu

    IPC分类号： G11C700

    CPC分类号： G11C11/406 ,  G11C7/1045

    摘要： A semiconductor memory device having a self-refresh operation includes a first circuit generating a first signal that specifies a first self-refresh cycle by a non-volatile circuit element provided in the semiconductor memory device, a second circuit receiving a second signal that specifies a second self-refresh cycle via a terminal that is used in common to another signal, and a third circuit generating a pulse signal having one of the first and second self-refresh cycles, the pulse signal being related to the self-refresh operation.

    摘要翻译： 具有自刷新操作的半导体存储器件包括：第一电路，产生由设置在半导体存储器件中的非易失性电路元件指定第一自刷新周期的第一信号;第二电路，接收指定第 第二自刷新周期经由与另一信号共同使用的端子，以及第三电路，产生具有第一和第二自刷新周期中的一个的脉冲信号，所述脉冲信号与自刷新操作相关。

    Constant-current generator, differential amplifier, and semiconductor integrated circuit
    10.
    发明授权
    Constant-current generator, differential amplifier, and semiconductor integrated circuit 有权
    恒流发电机，差分放大器和半导体集成电路

    公开(公告)号：US06452453B1

    公开(公告)日：2002-09-17

    申请号：US09562289

    申请日：2000-05-01

    申请人： Shinya Fujioka ,  Akihiro Funyu

    发明人： Shinya Fujioka ,  Akihiro Funyu

    IPC分类号： H03F304

    CPC分类号： H03F1/301 ,  H03F2203/45456 ,  H03F2203/45508

    摘要： The constant-current generator comprises a bias transistor whose drain and gate are connected to each other, and an outputting transistor. The threshold voltage of the outputting transistor is smaller than that of the bias transistor. The outputting transistor has the same source voltage and the same gate voltage as those of the bias transistor. Therefore, the gate-to-source voltages of the outputting transistor and the bias transistor are always kept equal. On the other hand, the drain-to-source current of the outputting transistor becomes larger than that of the bias transistor in accordance with the difference between the threshold voltages of the outputting transistor and the bias transistor. Accordingly, the outputting transistor can output a stable drain-to-source current even when the drain voltage of the bias transistor has shifted to lower the gate-to-source voltage thereof.

    摘要翻译： 恒流发生器包括漏极和栅极彼此连接的偏置晶体管和输出晶体管。 输出晶体管的阈值电压小于偏置晶体管的阈值电压。 输出晶体管具有与偏置晶体管相同的源极电压和相同的栅极电压。 因此，输出晶体管和偏置晶体管的栅极 - 源极电压总是保持相等。 另一方面，根据输出晶体管和偏置晶体管的阈值电压之差，输出晶体管的漏极 - 源极电流变得大于偏置晶体管的漏极 - 源极电流。 因此，即使当偏置晶体管的漏极电压已经偏移以降低其栅极至源极电压时，输出晶体管也可以输出稳定的漏极 - 源极电流。