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    Bipolar transistor which can be controlled by field effect and method for producing the same
    1.
    发明授权
    Bipolar transistor which can be controlled by field effect and method for producing the same 有权
    可通过场效应控制的双极晶体管及其制造方法

    公开(公告)号：US06309920B1

    公开(公告)日：2001-10-30

    申请号：US09462760

    申请日：2000-04-10

    申请人： Thomas Laska ,  Franz Auerbach ,  Heinrich Brunner ,  Alfred Porst ,  Jenoe Tihanyi ,  Gerhard Miller

    发明人： Thomas Laska ,  Franz Auerbach ,  Heinrich Brunner ,  Alfred Porst ,  Jenoe Tihanyi ,  Gerhard Miller

    IPC分类号： H01L218238

    CPC分类号： H01L29/7395

    摘要： A method for forming a field effect vertical bipolar transistor that includes a semiconductive body that has at its top surface a plurality of emitter zones of one conductivity type, each surrounded by a base zone of the opposite conductivity type, and gate electrodes for creating a channel at the surface through the base zone into the bulk inner portion of the one conduction type and at a bottom surface a collector zone that includes a collector electrode overlying a collector layer of the opposite conduction type overlying a field stop layer heavily doped of the opposite conduction type overlying the inner portion lightly doped of the one conduction type. Each of the collector layer and the field stop layer is less than 2 microns in thickness and the collector layer is used to inject minority carriers into the inner zone when appropriately biased.

    摘要翻译： 一种用于形成场效应垂直双极晶体管的方法，其包括半导体，该半导体在其顶表面上具有一个导电类型的多个发射区，每个由相反导电类型的基极区围绕，并且用于产生沟道 在通过基底区域的表面进入一个导电类型的本体内部部分和在底部表面处的收集器区域，该收集器区域包括覆盖相反导电类型的集电极层的集电极电极，该集电极层覆盖重掺杂相反导电 类型覆盖轻度掺杂的一种导电类型的内部部分。 集电极层和场停止层中的每一个的厚度小于2微米，并且当适当偏置时，集电极层用于将少数载流子注入内部区域。

    Semiconductor component having field-shaping regions
    2.
    发明授权
    Semiconductor component having field-shaping regions 失效
    具有场成形区域的半导体元件

    公开(公告)号：US06891204B2

    公开(公告)日：2005-05-10

    申请号：US09816927

    申请日：2001-03-23

    申请人： Heinrich Brunner ,  Franz Auerbach ,  Jenoe Tihanyi

    发明人： Heinrich Brunner ,  Franz Auerbach ,  Jenoe Tihanyi

    IPC分类号： H01L29/744 ,  H01L29/06 ,  H01L29/78 ,  H01L29/32 ,  H01L29/423

    CPC分类号： H01L29/7811 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/7802

    摘要： A semiconductor element has a semiconductor body of a first conductivity type. The semiconductor body has a zone of a second conductivity type embedded. Further regions of the second conductivity type surround the zone of the second conductivity type like a well. The further regions are interrupted in at least one location by a channel that is formed by the semiconductor body. The further regions are doped with a doping concentration that is high enough so that the further regions are not completely depleted of charge carriers when the semiconductor element is revere-biased.

    摘要翻译： 半导体元件具有第一导电类型的半导体本体。 半导体本体具有嵌入第二导电类型的区域。 第二导电类型的其他区域像井一样围绕第二导电类型的区域。 另外的区域通过由半导体本体形成的沟道在至少一个位置处中断。 另外的区域掺杂了足够高的掺杂浓度，使得当半导体元件被重新偏置时，其他区域不会完全耗尽电荷载流子。

    Arrangement of an electrical component placed on a substrate, and method for producing the same
    9.
    发明授权
    Arrangement of an electrical component placed on a substrate, and method for producing the same 有权
    放置在基板上的电气部件的布置及其制造方法

    公开(公告)号：US07649272B2

    公开(公告)日：2010-01-19

    申请号：US10566438

    申请日：2004-07-12

    申请人： Franz Auerbach ,  Karl Weidner

    发明人： Franz Auerbach ,  Karl Weidner

    IPC分类号： H01L23/29

    CPC分类号： H01L24/82 ,  H01L23/3735 ,  H01L23/3737 ,  H01L24/24 ,  H01L2224/24051 ,  H01L2224/24225 ,  H01L2224/24226 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00

    摘要： An electrical component is placed on a substrate. At least one film comprising a plastic material is connected to the component and to the substrate in such a way that a surface contour defined by the component and the substrate is represent is represented in a surface contour of the part of the film. Said film is laminated onto the component and the substrate in such a way that the film follows the topology of the arrangement consisting of the component and the substrate. Said film is in contact with the component and the substrate in a positive and non-positive manner, and comprises a composite material containing a filler that is different to the plastic material. The processability and electrical properties of the film are influenced by the filler or the composite material obtained thereby. In this way, other functions can be integrated into the film. Said component is, for example, a power semiconductor component. An electrically insulating and thermoconductive film is used, for example. A contact surface of the power semiconductor is electrically contracted through the film. The thermal conductivity of the film enables heat created during the operation of the power semiconductor component to be efficiently carried away.

    摘要翻译： 将电气部件放置在基板上。 包括塑料材料的至少一个薄膜以这样的方式连接到部件和基板上，使得由部件和基板限定的表面轮廓表示为薄膜部分的表面轮廓。 所述薄膜以这样的方式层压在组件和基底上，使得薄膜遵循由组件和基底组成的布置的拓扑结构。 所述膜以正极和非正性方式与组分和基底接触，并且包含含有与塑料材料不同的填料的复合材料。 膜的加工性和电性能受到由此获得的填料或复合材料的影响。 以这种方式，其他功能可以集成到电影中。 所述部件例如是功率半导体部件。 例如，使用电绝缘和导热膜。 功率半导体的接触表面通过膜电接收。 该膜的导热性使得在功率半导体部件的操作期间产生的热能够被有效地带走。