摘要:
In a purge gas assembly provided: in an outer circumference portion of a substrate stage, with a shoulder portion offset downward below a substrate mounting surface on an upper end of the substrate stage; a purge ring enclosing a stepped circumferential surface between the substrate mounting surface and the shoulder portion; and an annular gas ejection passage for ejecting the purge gas, the gas ejecting passage being defined between the stepped circumferential surface and an inner circumferential surface of the purge ring, an arrangement is made such that the purge gas can be ejected uniformly from the gas ejection passage over the entire circumference thereof and that the deposition of a film on an upper surface of the purge ring can also be restricted, and further that the construction is simplified. The purge ring has formed therein an annular groove which recesses from a lower surface thereof upward.
摘要:
In a purge gas assembly provided: in an outer circumference portion of a substrate stage, with a shoulder portion offset downward below a substrate mounting surface on an upper end of the substrate stage; a purge ring enclosing a stepped circumferential surface between the substrate mounting surface and the shoulder portion; and an annular gas ejection passage for ejecting the purge gas, the gas ejecting passage being defined between the stepped circumferential surface and an inner circumferential surface of the purge ring, an arrangement is made such that the purge gas can be ejected uniformly from the gas ejection passage over the entire circumference thereof and that the deposition of a film on an upper surface of the purge ring can also be restricted, and further that the construction is simplified. The purge ring has formed therein an annular groove which recesses from a lower surface thereof upward.
摘要:
A method for forming a tantalum nitride film, which comprises supplying a gaseous nitrogen atom-containing compound, as a reactant gas and supplying gaseous t-amylimido-tris-(dimethylamide)tantalum, as a gaseous raw material, to the surface of the substrate S to thus form a tantalum nitride film on the surface of the substrate S; and a film-forming apparatus, which comprises a reactant gas supply line L4; a container 13 for liquefy a raw material; an evaporator 11 for gasify the liquefied raw material; a liquid mass flow controller 12 for controlling the amount of the liquid raw material to be supplied; and a gaseous raw material supply line L1. These method and apparatus would permit the stable supply of the gaseous raw material at all times and the improvement of the throughput of the substrate to be processed and as a result, the method and the apparatus permit the improvement of the productivity of the tantalum nitride film.
摘要:
The absorbent article of the present invention comprises: a liquid-pervious surface sheet, a liquid-impervious backside sheet provided at the position opposing said surface sheet, and an absorption body provided between said surface sheet and said backside sheet, wherein the absorbent article comprises an endless compressed groove, surrounding a central part of said absorbent article, which is formed in said surface sheet and said absorption body in the thickness direction, and a plurality of concave parts, provided inside and outside said compressed groove, which are formed in said surface sheet and said absorption body in the thickness direction, and an uncompressed region bordering inner and outer edges of the compressed groove, wherein the closest distance between said compressed groove and the nearest concave parts is greater than the distance between adjacent ones of those same concave parts.
摘要:
A plurality of convex portions that protrude radially outward from a plurality of positions separated in the circumferential direction are provided on the outer peripheral surface of a driven gear. Each convex portion has, in the circumferential direction of the driven gear, a rising surface that rises from a minimum diameter position to a maximum diameter position in the direction opposite the rotational direction of the driven gear, and a falling surface that falls from that maximum diameter position to a minimum diameter position that is adjacent to and in back of that maximum diameter position with respect to the rotational direction of the driven gear. The circumferential length of the falling surface is greater than the circumferential length of the rising surface.
摘要:
An absorbent article package is individually packaged by folding a packaging sheet and an absorbent article in a state where the absorbent article is arranged on the packaging sheet. In a state where the individually-packaged absorbent article is opened, in the packaging sheet and the absorbent article, a first folding line based on which the absorbent article and the packaging sheet are folded towards the topsheet side, and a second folding line based on which the absorbent article and the packaging sheet are folded towards the backsheet side are formed adjacent to each other in the longitudinal direction.
摘要:
According to the present invention, an HCV replicon-replicating cell is produced by a production method including a step of introducing RNA containing an HCV replicon sequence and a selectable marker gene sequence into a Li23 cell or a cured cell derived from a Li23 cell. Further, a full-length HCV RNA-replicating cell is produced by a production method including a step of introducing RNA containing a full-length HCV genome sequence and a selectable marker gene sequence into a Li23 cell or a cured cell derived from a Li23 cell. The use of these cells enables the construction of an HCV life cycle reproduction system that is derived from a cell line other than the HuH-7 cell line and that has capabilities equivalent to those of an HCV life cycle reproduction system derived from the HuH-7 cell line.
摘要:
A plurality of convex portions that protrude radially outward from a plurality of positions separated in the circumferential direction are provided on the outer peripheral surface of a driven gear. Each convex portion has, in the circumferential direction of the driven gear, a rising surface that rises from a minimum diameter position to a maximum diameter position in the direction opposite the rotational direction of the driven gear, and a falling surface that falls from that maximum diameter position to a minimum diameter position that is adjacent to and in back of that maximum diameter position with respect to the rotational direction of the driven gear. The circumferential length of the falling surface is greater than the circumferential length of the rising surface.
摘要:
A mold type semiconductor device includes a semiconductor chip including a semiconductor part; a metallic layer; a solder layer; and a metallic member connecting to the semiconductor chip through the metallic layer and the solder layer. The solder layer is made of solder having yield stress smaller than that of the metallic layer. Even when the semiconductor chip is sealed with a resin mold, the metallic layer is prevented from cracking.
摘要:
A mold type semiconductor device includes a semiconductor chip including a semiconductor part; a metallic layer; a solder layer; and a metallic member connecting to the semiconductor chip through the metallic layer and the solder layer. The solder layer is made of solder having yield stress smaller than that of the metallic layer. Even when the semiconductor chip is sealed with a resin mold, the metallic layer is prevented from cracking.