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公开(公告)号：US20070158850A1
公开(公告)日：2007-07-12
申请号：US11702498
申请日：2007-02-06
申请人： Naohiko Hirano , Nobuyuki Kato , Takanori Teshima , Yoshitsugu Sakamoto , Shoji Miura , Akihiro Niimi
发明人： Naohiko Hirano , Nobuyuki Kato , Takanori Teshima , Yoshitsugu Sakamoto , Shoji Miura , Akihiro Niimi
IPC分类号： H01L23/48
CPC分类号： H01L24/33 , H01L23/482 , H01L23/485 , H01L23/488 , H01L24/32 , H01L24/48 , H01L2224/05599 , H01L2224/291 , H01L2224/29111 , H01L2224/32245 , H01L2224/45099 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/85444 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/04941 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/3025 , H01L2924/351 , H01L2924/01014 , H01L2924/01028 , H01L2924/3512 , H01L2924/00 , H01L2924/014 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A mold type semiconductor device includes a semiconductor chip including a semiconductor part; a metallic layer; a solder layer; and a metallic member connecting to the semiconductor chip through the metallic layer and the solder layer. The solder layer is made of solder having yield stress smaller than that of the metallic layer. Even when the semiconductor chip is sealed with a resin mold, the metallic layer is prevented from cracking.
摘要翻译： 一种模具型半导体器件，包括：包括半导体部件的半导体芯片; 金属层; 焊料层; 以及通过金属层和焊料层连接到半导体芯片的金属构件。 焊料层由屈服应力小于金属层的焊料制成。 即使当用树脂模具密封半导体芯片时，也防止金属层开裂。
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公开(公告)号：US07193326B2
公开(公告)日：2007-03-20
申请号：US10859130
申请日：2004-06-03
申请人： Naohiko Hirano , Nobuyuki Kato , Takanori Teshima , Yoshitsugu Sakamoto , Shoji Miura , Akihiro Niimi
发明人： Naohiko Hirano , Nobuyuki Kato , Takanori Teshima , Yoshitsugu Sakamoto , Shoji Miura , Akihiro Niimi
IPC分类号： H01L23/48
CPC分类号： H01L24/33 , H01L23/482 , H01L23/485 , H01L23/488 , H01L24/32 , H01L24/48 , H01L2224/05599 , H01L2224/291 , H01L2224/29111 , H01L2224/32245 , H01L2224/45099 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/85444 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/04941 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/3025 , H01L2924/351 , H01L2924/01014 , H01L2924/01028 , H01L2924/3512 , H01L2924/00 , H01L2924/014 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A mold type semiconductor device includes a semiconductor chip including a semiconductor part; a metallic layer; a solder layer; and a metallic member connecting to the semiconductor chip through the metallic layer and the solder layer. The solder layer is made of solder having yield stress smaller than that of the metallic layer. Even when the semiconductor chip is sealed with a resin mold, the metallic layer is prevented from cracking.
摘要翻译： 一种模具型半导体器件，包括：包括半导体部件的半导体芯片; 金属层; 焊料层; 以及通过金属层和焊料层连接到半导体芯片的金属构件。 焊料层由屈服应力小于金属层的焊料制成。 即使当用树脂模具密封半导体芯片时，也防止金属层开裂。
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公开(公告)号：US07468318B2
公开(公告)日：2008-12-23
申请号：US11702498
申请日：2007-02-06
申请人： Naohiko Hirano , Nobuyuki Kato , Takanori Teshima , Yoshitsugu Sakamoto , Shoji Miura , Akihiro Niimi
发明人： Naohiko Hirano , Nobuyuki Kato , Takanori Teshima , Yoshitsugu Sakamoto , Shoji Miura , Akihiro Niimi
IPC分类号： H01L21/4763
CPC分类号： H01L24/33 , H01L23/482 , H01L23/485 , H01L23/488 , H01L24/32 , H01L24/48 , H01L2224/05599 , H01L2224/291 , H01L2224/29111 , H01L2224/32245 , H01L2224/45099 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/85444 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/04941 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/3025 , H01L2924/351 , H01L2924/01014 , H01L2924/01028 , H01L2924/3512 , H01L2924/00 , H01L2924/014 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A method for manufacturing a mold type semiconductor device is provided. The device includes a semiconductor chip having a semiconductor part and a metallic member connecting to the chip via a conductive layer and a connecting member. The method includes: forming the semiconductor part on a semiconductor substrate so that a cell portion is provided; forming the conductive layer on the substrate; forming a first resist layer to cover a part of the conductive layer corresponding to the cell portion; etching the conductive layer with the first resist layer as a mask so that a first conductive layer is provided; removing the first resist layer and forming a second conductive layer to cover a surface and an edge of the first conductive layer. The second conductive layer has a Young's modulus equal to or larger than the semiconductor substrate.
摘要翻译： 提供了一种用于制造模具型半导体器件的方法。 该器件包括具有半导体部件和通过导电层和连接部件与芯片连接的金属部件的半导体芯片。 该方法包括：在半导体衬底上形成半导体部分以便提供电池部分; 在所述基板上形成所述导电层; 形成第一抗蚀剂层以覆盖对应于所述电池单元部分的所述导电层的一部分; 用第一抗蚀剂层作为掩模蚀刻导电层，从而提供第一导电层; 去除第一抗蚀剂层并形成第二导电层以覆盖第一导电层的表面和边缘。 第二导电层的杨氏模量等于或大于半导体衬底。
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公开(公告)号：US20080237301A1
公开(公告)日：2008-10-02
申请号：US12073690
申请日：2008-03-07
申请人： Naohiko Hirano , Akira Tanahashi , Yoshitsugu Sakamoto , Kaichi Tsuruta , Takashi Ishii , Satoshi Soga
发明人： Naohiko Hirano , Akira Tanahashi , Yoshitsugu Sakamoto , Kaichi Tsuruta , Takashi Ishii , Satoshi Soga
CPC分类号： C22C13/00 , B21C37/02 , B21C37/04 , B22F1/0011 , B23K35/001 , B23K35/0222 , B23K35/0233 , B23K35/0244 , B23K35/262 , B23K35/3612 , B23K35/3613 , B23K35/3618 , B23K35/362 , C22C19/03 , H01L24/29
摘要： A mixed mother alloy is prepared from a solder mixture comprising a pyrolyzable flux and high melting point metal particles, the mixed mother alloy is charged into a large amount of molten solder and stirred, and a billet is prepared. The billet can then be extruded, rolled, and punched to form a pellet or a washer, for example.
摘要翻译： 从包含可热解助熔剂和高熔点金属颗粒的焊料混合物制备混合母合金，将混合母合金装入大量熔融焊料中并搅拌，并制备坯料。 然后可以将坯料挤出，轧制和冲压以形成例如颗粒或垫圈。
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公开(公告)号：US20110068149A1
公开(公告)日：2011-03-24
申请号：US12923319
申请日：2010-09-14
申请人： Naohiko Hirano , Akira Tanahashi , Yoshitsugu Sakamoto , Kaichi Tsuruta , Takashi Ishii , Satoshi Soga
发明人： Naohiko Hirano , Akira Tanahashi , Yoshitsugu Sakamoto , Kaichi Tsuruta , Takashi Ishii , Satoshi Soga
IPC分类号： B23K35/14
CPC分类号： C22C13/00 , B22F1/025 , B23K35/0244 , B23K35/262 , B23K35/3033 , B23K35/36
摘要： A mixed mother alloy is prepared from a solder mixture comprising a pyrolyzable flux and high melting point metal particles, the mixed mother alloy is charged into a large amount of molten solder and stirred, and a billet is prepared. The billet can then be extruded, rolled, and punched to form a pellet or a washer, for example.
摘要翻译： 从包含可热解助熔剂和高熔点金属颗粒的焊料混合物制备混合母合金，将混合母合金装入大量熔融焊料中并搅拌，并制备坯料。 然后可以将坯料挤出，轧制和冲压以形成例如颗粒或垫圈。
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公开(公告)号：US20090236725A1
公开(公告)日：2009-09-24
申请号：US12226764
申请日：2007-04-26
申请人： Naohiko Hirano , Yoshitsugu Sakamoto , Tomomi Okumura , Kaichi Tsuruta , Minoru Ueshima , Takashi Ishii
发明人： Naohiko Hirano , Yoshitsugu Sakamoto , Tomomi Okumura , Kaichi Tsuruta , Minoru Ueshima , Takashi Ishii
IPC分类号： H01L23/488 , B23K35/24
CPC分类号： H05K3/3478 , B23K35/262 , B23K35/40 , H01L23/492 , H01L23/49866 , H01L24/29 , H01L24/83 , H01L2224/291 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29211 , H01L2224/29355 , H01L2224/29499 , H01L2224/29582 , H01L2224/29611 , H01L2224/29694 , H01L2224/29695 , H01L2224/32225 , H01L2224/83101 , H01L2224/83455 , H01L2224/83801 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/15747 , H05K2201/0215 , H05K2201/2036 , H05K2203/0415 , H01L2924/00 , H01L2924/01028 , H01L2924/01026 , H01L2924/01049 , H01L2924/01083 , H01L2924/3512 , H01L2924/00014 , H01L2224/13111 , H01L2224/13109 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： An electronic component having a semiconductor element bonded to a substrate with solder has a decreased bonding strength if there is not a suitable clearance between the semiconductor element and the substrate. Therefore, a solder preform having high melting point metal particles dispersed in solder has been used in the manufacture of electronic components. However, when an electronic component was manufactured using a conventional solder preform, there were cases in which the semiconductor element leaned or the bonding strength was not adequate.A solder preform according to the present invention has a variation in the size of high melting point metal particles which is at most 20 micrometers when the metal particle diameter is 50 micrometers, and an alloy layer of the high melting point metal particles and the main component of solder is formed around the high melting point metal particles. In addition, no voids at all are present in the solder. An electronic component according to the present invention has a semiconductor element bonded to a substrate with the above-described solder preform and has excellent resistance to heat cycles.
摘要翻译： 如果半导体元件和基板之间没有合适的间隙，则具有用焊料与基板结合的半导体元件的电子部件的接合强度降低。 因此，在电子部件的制造中已经使用了分散在焊料中的高熔点金属粒子的焊料预成型体。 然而，当使用常规的焊料预制件制造电子部件时，存在半导体元件倾斜或接合强度不足的情况。 根据本发明的焊料预成型体在金属粒径为50微米时具有至多20微米的高熔点金属颗粒的尺寸变化，并且高熔点金属颗粒和主要组分的合金层 的焊料形成在高熔点金属颗粒周围。 另外，在焊料中也不存在空隙。 根据本发明的电子部件具有利用上述焊料预成型件与基板结合的半导体元件，并具有优异的耐热循环性。
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公开(公告)号：US20070057373A1
公开(公告)日：2007-03-15
申请号：US11516501
申请日：2006-09-07
IPC分类号： H01L23/52
CPC分类号： H01L23/051 , H01L23/492 , H01L23/49503 , H01L23/49513 , H01L23/49541 , H01L23/49562 , H01L23/49575 , H01L24/32 , H01L24/33 , H01L24/48 , H01L24/49 , H01L24/83 , H01L2224/26175 , H01L2224/27013 , H01L2224/291 , H01L2224/29111 , H01L2224/2919 , H01L2224/32014 , H01L2224/32057 , H01L2224/32245 , H01L2224/33181 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/83051 , H01L2224/83385 , H01L2224/83455 , H01L2224/83801 , H01L2224/92147 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/181 , H01L2924/00 , H01L2924/0132 , H01L2224/83 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes: first and second metallic plates, each of which includes a heat radiation surface and an inner surface; a semiconductor element between the metallic plates; a block between the second metallic plate and the semiconductor element; a solder member between the second metallic plate and the block; and a resin mold. The heat radiation surface is exposed from the resin mold. The second metallic plate includes a groove for preventing the solder member from expanding outside of the block. The groove is disposed on the inner surface and disposed on an outer periphery of the block. The second metallic plate further includes an inner surface member on an inner surface of the groove. The inner surface member has a solder wettability, which is larger than a solder wettability of the block.
摘要翻译： 一种半导体器件包括：第一和第二金属板，每个金属板包括散热表面和内表面; 金属板之间的半导体元件; 第二金属板和半导体元件之间的块; 在所述第二金属板和所述块之间的焊料构件; 和树脂模具。 散热面从树脂模具露出。 所述第二金属板包括用于防止所述焊料部件在所述块体的外部扩展的槽。 槽设置在内表面上并且设置在块的外周。 第二金属板还包括在槽的内表面上的内表面构件。 内表面构件具有大于块的焊料润湿性的焊料润湿性。
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公开(公告)号：US07235876B2
公开(公告)日：2007-06-26
申请号：US11516501
申请日：2006-09-07
CPC分类号： H01L23/051 , H01L23/492 , H01L23/49503 , H01L23/49513 , H01L23/49541 , H01L23/49562 , H01L23/49575 , H01L24/32 , H01L24/33 , H01L24/48 , H01L24/49 , H01L24/83 , H01L2224/26175 , H01L2224/27013 , H01L2224/291 , H01L2224/29111 , H01L2224/2919 , H01L2224/32014 , H01L2224/32057 , H01L2224/32245 , H01L2224/33181 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/83051 , H01L2224/83385 , H01L2224/83455 , H01L2224/83801 , H01L2224/92147 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/181 , H01L2924/00 , H01L2924/0132 , H01L2224/83 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes: first and second metallic plates, each of which includes a heat radiation surface and an inner surface; a semiconductor element between the metallic plates; a block between the second metallic plate and the semiconductor element; a solder member between the second metallic plate and the block; and a resin mold. The heat radiation surface is exposed from the resin mold. The second metallic plate includes a groove for preventing the solder member from expanding outside of the block. The groove is disposed on the inner surface and disposed on an outer periphery of the block. The second metallic plate further includes an inner surface member on an inner surface of the groove. The inner surface member has a solder wettability, which is larger than a solder wettability of the block.
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公开(公告)号：US10081852B2
公开(公告)日：2018-09-25
申请号：US12923319
申请日：2010-09-14
申请人： Naohiko Hirano , Akira Tanahashi , Yoshitsugu Sakamoto , Kaichi Tsuruta , Takashi Ishii , Satoshi Soga
发明人： Naohiko Hirano , Akira Tanahashi , Yoshitsugu Sakamoto , Kaichi Tsuruta , Takashi Ishii , Satoshi Soga
CPC分类号： C22C13/00 , B22F1/025 , B23K35/0244 , B23K35/262 , B23K35/3033 , B23K35/36
摘要： A mixed mother alloy is prepared from a solder mixture comprising a pyrolyzable flux and high melting point metal particles, the mixed mother alloy is charged into a large amount of molten solder and stirred, and a billet is prepared. The billet can then be extruded, rolled, and punched to form a pellet or a washer, for example.
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公开(公告)号：US07800230B2
公开(公告)日：2010-09-21
申请号：US12226764
申请日：2007-04-26
申请人： Naohiko Hirano , Yoshitsugu Sakamoto , Tomomi Okumura , Kaichi Tsuruta , Minoru Ueshima , Takashi Ishii
发明人： Naohiko Hirano , Yoshitsugu Sakamoto , Tomomi Okumura , Kaichi Tsuruta , Minoru Ueshima , Takashi Ishii
CPC分类号： H05K3/3478 , B23K35/262 , B23K35/40 , H01L23/492 , H01L23/49866 , H01L24/29 , H01L24/83 , H01L2224/291 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29211 , H01L2224/29355 , H01L2224/29499 , H01L2224/29582 , H01L2224/29611 , H01L2224/29694 , H01L2224/29695 , H01L2224/32225 , H01L2224/83101 , H01L2224/83455 , H01L2224/83801 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/15747 , H05K2201/0215 , H05K2201/2036 , H05K2203/0415 , H01L2924/00 , H01L2924/01028 , H01L2924/01026 , H01L2924/01049 , H01L2924/01083 , H01L2924/3512 , H01L2924/00014 , H01L2224/13111 , H01L2224/13109 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： A solder preform according to the present invention has a variation in the size of high melting point metal particles which is at most 20 micrometers when the metal particle diameter is 50 micrometers, and an alloy layer of the high melting point metal particles and the main component of solder is formed around the high melting point metal particles. In addition, no voids at all are present in the solder. An electronic component according to the present invention has a semiconductor element bonded to a substrate with the above-described solder preform and has excellent resistance to heat cycles.
摘要翻译： 根据本发明的焊料预成型体在金属粒径为50微米时具有至多20微米的高熔点金属颗粒的尺寸变化，并且高熔点金属颗粒和主要组分的合金层 的焊料形成在高熔点金属颗粒周围。 另外，在焊料中也不存在空隙。 根据本发明的电子部件具有利用上述焊料预成型件与基板结合的半导体元件，并具有优异的耐热循环性。
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