公开(公告)号：US20110318505A1

公开(公告)日：2011-12-29

申请号：US13130997

申请日：2009-12-07

申请人： Akiko Yamamoto ,  Harunori Ushikawa ,  Nobuyuki Kato ,  Takakazu Yamada

发明人： Akiko Yamamoto ,  Harunori Ushikawa ,  Nobuyuki Kato ,  Takakazu Yamada

IPC分类号： C23C16/34 ,  C23C16/455 ,  C23C16/448 ,  C23C16/50

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/4481

摘要： A method for forming a tantalum nitride film, which comprises supplying a gaseous nitrogen atom-containing compound, as a reactant gas and supplying gaseous t-amylimido-tris-(dimethylamide)tantalum, as a gaseous raw material, to the surface of the substrate S to thus form a tantalum nitride film on the surface of the substrate S; and a film-forming apparatus, which comprises a reactant gas supply line L4; a container 13 for liquefy a raw material; an evaporator 11 for gasify the liquefied raw material; a liquid mass flow controller 12 for controlling the amount of the liquid raw material to be supplied; and a gaseous raw material supply line L1. These method and apparatus would permit the stable supply of the gaseous raw material at all times and the improvement of the throughput of the substrate to be processed and as a result, the method and the apparatus permit the improvement of the productivity of the tantalum nitride film.

摘要翻译： 一种形成氮化钽膜的方法，其包括供给含氮气的化合物作为反应气体，并将作为气态原料的气态叔戊基酰胺 - 三（二甲基酰胺）钽供给至基材表面 从而在衬底S的表面上形成氮化钽膜; 以及成膜装置，其包括反应气体供给管线L4; 用于液化原料的容器13; 用于气化液化原料的蒸发器11; 液体质量流量控制器12，用于控制待供应的液体原料的量; 和气态原料供给管线L1。 这些方法和装置将一直允许气态原料的稳定供应以及待处理的基材的通过量的提高，结果，该方法和装置允许提高氮化钽膜的生产率 。

公开(公告)号：US08197599B2

公开(公告)日：2012-06-12

申请号：US12086032

申请日：2006-11-13

申请人： Takakazu Yamada ,  Nobuyuki Kato ,  Masaki Uematsu

发明人： Takakazu Yamada ,  Nobuyuki Kato ,  Masaki Uematsu

IPC分类号： C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/45514 ,  C23C16/45565

摘要： A gas head that, at low cost, is capable of suppressing any deactivation of radical gas and capable of uniformly introducing a raw material gas on a substrate; and a relevant thin-film manufacturing apparatus are provided. A gas head (13) according to the present invention includes a reactive gas introduction port (30A) for introduction of a reactive gas, a plurality of raw material gas introduction ports (30B) for introduction of a raw material gas, and a dispersion board (32) for dispersing the raw material gas, wherein the plurality of the raw material gas introduction ports (30B) are disposed so as to surround the periphery of the reactive gas introduction port (30A). The reactive gas having been introduced in the reactive gas introduction port (30A) is mixed with the raw material gas having been introduced through a plurality of raw material gas introduction ports (30B) and dispersed by means of the dispersion board (32). Although the plurality of raw material gas introduction ports (30B) are disposed around the reactive gas introduction port (30A), they are not required to be minute holes such as shower holes.

摘要翻译： 一种低成本地能够抑制自由基气体的失活并能够将原料气体均匀地引入到基板上的气体头， 并提供相关的薄膜制造装置。 根据本发明的气体头（13）包括用于引入反应性气体的反应气体引入口（30A），用于引入原料气体的多个原料气体导入口（30B）和分散板 （32），用于分散原料气体，其中多个原料气体导入口（30B）配置成包围反应气体导入口（30A）的周围。 引入到反应气体导入口（30A）中的反应性气体与通过多个原料气体导入口（30B）导入并通过分散板（32）分散的原料气体混合。 虽然多个原料气体导入口（30B）配置在反应气体导入口（30A）的周围，但不需要像淋浴孔那样的小孔。

公开(公告)号：US20090250004A1

公开(公告)日：2009-10-08

申请号：US12086032

申请日：2006-11-13

申请人： Takakazu Yamada ,  Nobuyuki Kato ,  Masaki Uematsu

发明人： Takakazu Yamada ,  Nobuyuki Kato ,  Masaki Uematsu

IPC分类号： C23C16/00 ,  B05B7/00

CPC分类号： C23C16/45574 ,  C23C16/45514 ,  C23C16/45565

摘要： A gas head that, at low cost, is capable of suppressing any deactivation of radical gas and capable of uniformly introducing a raw material gas on a substrate; and a relevant thin-film manufacturing apparatus are provided. A gas head (13) according to the present invention includes a reactive gas introduction port (30A) for introduction of a reactive gas, a plurality of raw material gas introduction ports (30B) for introduction of a raw material gas, and a dispersion board (32) for dispersing the raw material gas, wherein the plurality of the raw material gas introduction ports (30B) are disposed so as to surround the periphery of the reactive gas introduction port (30A). The reactive gas having been introduced in the reactive gas introduction port (30A) is mixed with the raw material gas having been introduced through a plurality of raw material gas introduction ports (30B) and dispersed by means of the dispersion board (32). Although the plurality of raw material gas introduction ports (30B) are disposed around the reactive gas introduction port (30A), they are not required to be minute holes such as shower holes.

摘要翻译： 一种低成本地能够抑制自由基气体的失活并能够将原料气体均匀地引入到基板上的气体头， 并提供相关的薄膜制造装置。 根据本发明的气体头（13）包括用于引入反应性气体的反应气体引入口（30A），用于引入原料气体的多个原料气体导入口（30B）和分散板 （32），用于分散原料气体，其中多个原料气体导入口（30B）配置成包围反应气体导入口（30A）的周围。 引入到反应气体导入口（30A）中的反应性气体与通过多个原料气体导入口（30B）导入并通过分散板（32）分散的原料气体混合。 虽然多个原料气体导入口（30B）配置在反应气体导入口（30A）的周围，但不需要像淋浴孔那样的小孔。

公开(公告)号：US20050056217A1

公开(公告)日：2005-03-17

申请号：US10911639

申请日：2004-08-05

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： H01L21/20 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  C23C16/00

CPC分类号： C23C16/4557 ,  C23C16/4411 ,  C23C16/45565 ,  C23C16/45572

摘要： The present invention herein provides a shower head whose temperature can be controlled in consideration of the film-forming conditions selected and a thin film-manufacturing device which permits the stable and continuous formation of thin films including only a trace amount of particles while reproducing a good film thickness distribution and compositional distribution, and a high film-forming rate and which is excellent in the productivity and the mass-producing ability as well as a method for the preparation of such a film. The shower head is so designed that the shower head structure is incorporated into an upper cap of a film-forming vessel, that a heat-exchange means is disposed in the upper cap to thus control the temperature of the upper cap and to in turn allow heat-exchange to occur at the contact surface between a disk-like shower plate constituting the shower head surface and the upper cap and that the temperature of the shower head can be controlled in consideration of the film-forming conditions selected. A thin film-manufacturing device is equipped with the shower head in its film-forming vessel and a thin film is prepared using the device.

摘要翻译： 本发明提供了一种喷淋头，其温度可以根据所选择的成膜条件进行控制，薄膜制造装置允许稳定且连续地形成仅包含微量颗粒的薄膜，同时再现良好的 膜厚分布和组成分布，成膜率高，生产性和批量生产能力优异的方法以及制备这种膜的方法。 淋浴头被设计成将喷头结构结合到成膜容器的上盖中，将热交换装置设置在上盖中，从而控制上盖的温度，并且进而允许 考虑到所选择的成膜条件，可以在构成淋浴头表面的盘形淋浴板和上盖之间的接触表面处发生热交换，并且可以控制喷淋头的温度。 薄膜制造装置在其成膜容器中配备有喷头，并且使用该装置制备薄膜。

公开(公告)号：US08262798B2

公开(公告)日：2012-09-11

申请号：US10911639

申请日：2004-08-05

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/52 ,  C23C16/455 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4557 ,  C23C16/4411 ,  C23C16/45565 ,  C23C16/45572

摘要： The present invention herein provides a shower head whose temperature can be controlled in consideration of the film-forming conditions selected and a thin film-manufacturing device which permits the stable and continuous formation of thin films including only a trace amount of particles while reproducing a good film thickness distribution and compositional distribution, and a high film-forming rate and which is excellent in the productivity and the mass-producing ability as well as a method for the preparation of such a film. The shower head is so designed that the shower head structure is incorporated into an upper cap of a film-forming vessel, that a heat-exchange means is disposed in the upper cap to thus control the temperature of the upper cap and to in turn allow heat-exchange to occur at the contact surface between a disk-like shower plate constituting the shower head surface and the upper cap and that the temperature of the shower head can be controlled in consideration of the film-forming conditions selected. A thin film-manufacturing device is equipped with the shower head in its film-forming vessel and a thin film is prepared using the device.

摘要翻译： 本发明提供了一种喷淋头，其温度可以根据所选择的成膜条件进行控制，薄膜制造装置允许稳定且连续地形成仅包含微量颗粒的薄膜，同时再现良好的 膜厚分布和组成分布，成膜率高，生产性和批量生产能力优异的方法以及制备这种膜的方法。 淋浴头被设计成将喷头结构结合到成膜容器的上盖中，将热交换装置设置在上盖中，从而控制上盖的温度，并且进而允许 考虑到所选择的成膜条件，可以在构成淋浴头表面的盘形淋浴板和上盖之间的接触表面处发生热交换，并且可以控制喷淋头的温度。 薄膜制造装置在其成膜容器中配备有喷头，并且使用该装置制备薄膜。

公开(公告)号：US20050199182A1

公开(公告)日：2005-09-15

申请号：US10612149

申请日：2003-07-03

申请人： Takeshi Masuda ,  Masahiko Kajinuma ,  Takakazu Yamada ,  Hiroto Uchida ,  Masaki Uematsu ,  Koukou Suu

发明人： Takeshi Masuda ,  Masahiko Kajinuma ,  Takakazu Yamada ,  Hiroto Uchida ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C30B25/02 ,  C30B25/14 ,  H01L21/205 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/409 ,  C23C16/45512 ,  C23C16/45519 ,  C23C16/45589 ,  C30B25/02 ,  C30B25/14 ,  C30B29/60

摘要： A thin film-forming apparatus, for ensuring uniform plane distribution of properties of a film formed on a substrate surface, has a gas-supply port 24a supplying a gas mixture from a gas-mixing chamber 24 to a shower head 25. The port is arranged at the peripheral portion on the bottom face of the gas-mixing chamber so that the gas mixture flows from the upper peripheral region of the head towards the center thereof. An exhaust port 32 discharging the exhaust gas generated in the film-forming chamber 3 is arranged at a position lower than the level of a stage 31 during film-formation directing the exhaust gas towards the side wall of the chamber 3 and discharging the exhaust gas through the exhaust port. The stage 31 is designed to move freely up and down to adjust the distance between the shower head 25 and substrate S.

摘要翻译： 用于确保形成在基板表面上的膜的性质的均匀平面分布的薄膜形成装置具有将气体混合物从气体混合室24供应到喷淋头25的供气口24a。 该端口布置在气体混合室的底面的周边部分处，使得气体混合物从头部的上周边区域朝向其中心流动。 将成膜室3内产生的废气排出的排气口32配置在低于气缸台31的高度的位置，在成膜期间将排气朝着室3的侧壁排出，排出废气 通过排气口。 舞台31被设计成上下移动以调节淋浴头25和基底S之间的距离。

公开(公告)号：US20050059246A1

公开(公告)日：2005-03-17

申请号：US10910807

申请日：2004-08-04

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/302 ,  H01L21/461

CPC分类号： C23C16/4557 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/45572

摘要： The present invention herein provide a thin film-manufacturing device and a thin film-manufacturing method which are excellent in the mass-production ability and productivity, which permit the stable and continuous production of films over a long period of time while reproducing a good film thickness distribution, a good compositional distribution and a high film-forming rate and controlling the number of particles generated during the film-formation to a lower level. The device is one serving as a CVD device in which a film-forming gas is introduced into a reaction chamber from the upper portion of the chamber serving as a reaction space, through a shower head and a film is formed on a heated substrate, wherein the device is so designed that the upper reaction space is constructed by the substrate-supporting stage which is free of any rotational motion or free of any elevating motion, the shower head and a deposition-inhibitory plate, that the substrate-supporting stage and the deposition-inhibitory plate are so arranged as to form, between them, a concentric gap or interstice serving as a gas-exhaust path through which an inert gas can flow from the upper portion of the gas-exhaust path along the deposition-inhibitory plate and that a lower space is formed on the secondary side of the gas-exhaust path.

摘要翻译： 本发明提供一种薄膜制造装置和薄膜制造方法，其制造能力和生产率优异，能够长时间稳定且连续地生产薄膜，同时再生良好的薄膜 厚度分布，良好的组成分布和高成膜速率，并且将成膜期间产生的颗粒数控制到更低的水平。 该装置是用作CVD装置的装置，其中成膜气体通过喷淋头从用作反应空间的室的上部引入反应室，并且在加热的基板上形成膜，其中 该设备被设计成使得上反应空间由没有任何旋转运动或没有任何升高运动的基板支撑台，淋浴喷头和防沉积板构成，基板支撑台和 沉积抑制板被布置成在它们之间形成用作气体排出路径的同心间隙或间隙，惰性气体可以沿着沉积抑制板从气体排出路径的上部流动， 在排气路径的次级侧形成较低的空间。

公开(公告)号：US08168001B2

公开(公告)日：2012-05-01

申请号：US10417139

申请日：2003-04-17

申请人： Hiroto Uchida ,  Takehito Jinbo ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Takakazu Yamada ,  Masaki Uematsu ,  Koukou Suu ,  Isao Kimura

发明人： Hiroto Uchida ,  Takehito Jinbo ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Takakazu Yamada ,  Masaki Uematsu ,  Koukou Suu ,  Isao Kimura

IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/306

CPC分类号： C23C16/45512 ,  C23C16/409 ,  C23C16/4402 ,  C23C16/455 ,  C23C16/45519

摘要： Film-forming apparatus including a film-forming vacuum chamber having a stage for a substrate, a chamber for mixing gas comprising a raw gas and a reactive gas connected to the film-forming chamber, a chamber for vaporizing the raw material, and a gas head for introducing the mixed gas into the film-forming chamber, disposed on the upper face of the film-forming chamber and opposed to the stage. Particle traps with controllable temperatures are positioned between the vaporization chamber and the mixing chamber and on the downstream side of the mixing chamber. When forming a thin film with the apparatus, a reactive gas and/or a carrier gas are passed through the film-forming chamber while opening a valve in a by-pass line, connecting the primary side to the secondary side of the particle trap arranged at the downstream side of the mixing chamber. The valve is then closed and the film-forming operation is initiated.

摘要翻译： 一种成膜装置，其特征在于，具备：具有基板台的成膜用真空室，将含有原料气体的气体和与所述成膜室连接的反应性气体混合的室，将所述原料蒸发的室， 用于将混合气体引入成膜室，其设置在成膜室的上表面上并且与该台相对。 具有可控温度的颗粒捕集器位于蒸发室和混合室之间以及混合室的下游侧。 当用该装置形成薄膜时，反应气体和/或载气通过成膜室，同时打开旁通管线中的阀，将初级侧与次级侧连接，将颗粒捕集器的二次侧排列 在混合室的下游侧。 然后关闭阀门，并开始成膜操作。

公开(公告)号：US20100000673A1

公开(公告)日：2010-01-07

申请号：US12376073

申请日：2007-07-31

申请人： Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Isao Kimura ,  Shin Kikuchi ,  Takakazu Yamada ,  Kuokou Suu

发明人： Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Isao Kimura ,  Shin Kikuchi ,  Takakazu Yamada ,  Kuokou Suu

IPC分类号： B32B38/00 ,  B05D5/12 ,  C23C16/44

CPC分类号： H01L21/31691 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/787 ,  C23C16/02 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/02197 ,  H01L21/02271 ,  H01L28/55 ,  H01L28/65

摘要： A film forming method in which a crystalline film having PZT (111) as a principal component thereof is laminated on a foundation film having a (111) oriented noble metal as a principal component thereof, the method including the steps of: forming an oxide film whose interplanar spacing is closer to the PZT (111) than to the noble metal, on a surface of the foundation film; and forming the crystalline film on the surface of the foundation film by an MOCVD method.

摘要翻译： 将具有PZT（111）作为其主要成分的结晶膜层压在具有（111）取向的贵金属作为其主要成分的基础膜上的成膜方法，该方法包括以下步骤：形成氧化膜 其基底膜的表面上的平面间距比贵金属更接近PZT（111）; 并通过MOCVD法在基膜的表面上形成结晶膜。

公开(公告)号：US20090311417A1

公开(公告)日：2009-12-17

申请号：US12376038

申请日：2007-07-31

申请人： Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Isao Kimura ,  Shin Kikuchi ,  Takakazu Yamada ,  Koukou Suu

发明人： Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Isao Kimura ,  Shin Kikuchi ,  Takakazu Yamada ,  Koukou Suu

IPC分类号： C23C16/18

CPC分类号： H01L21/31691 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/787 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/02197 ,  H01L21/02271 ,  H01L28/55 ,  H01L28/65 ,  H01L41/1876 ,  H01L41/316

摘要： A film forming method in which crystalline film having PZT (001) or PZT (100) as a principal component thereof is laminated on a foundation film having a (111) oriented noble metal as a principal component thereof, the method including the steps of: performing reduction treatment on a surface of the foundation film; and forming the crystalline film by an MOCVD method on the surface of the foundation film.

摘要翻译： 将具有PZT（001）或PZT（100）作为其主要成分的结晶膜层叠在具有（111）取向的贵金属作为其主要成分的基础膜上的成膜方法，该方法包括以下步骤： 在基膜的表面进行还原处理; 并通过MOCVD法在基膜的表面上形成结晶膜。