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1.发明授权公开(公告)号：US08077234B2
公开(公告)日：2011-12-13
申请号：US12179976
申请日：2008-07-25
CPC分类号： H04N9/045
摘要： An image pickup device has a signal processing part configured to perform signal process for the first to third color signals. The signal processing part includes a first color generator configured to generate a fourth color signal corresponding to a reference pixel based on a ratio between a second color signal at a pixel located in vicinity of the reference pixel and a first color signal at a pixel located in vicinity of the reference pixel, a second color generator configured to generate a fifth color signal corresponding to the reference pixel based on a ratio between a third color signal at a pixel located in vicinity of the reference pixel and the first color signal at a pixel located in vicinity of the reference pixel, and a image quality converter configured to generate color signals by performing a predetermined image process based on the first to fifth color signals.
摘要翻译： 图像拾取装置具有被配置为对第一至第三颜色信号执行信号处理的信号处理部。 信号处理部分包括第一颜色发生器，其被配置为基于位于参考像素附近的像素处的第二颜色信号与位于参考像素附近的像素处的第一颜色信号之间的比率来生成对应于参考像素的第四颜色信号 参考像素的附近，第二颜色发生器，被配置为基于位于参考像素附近的像素处的第三颜色信号与位于所述参考像素附近的第一颜色信号之间的比率来生成对应于参考像素的第五颜色信号 以及图像质量转换器，被配置为通过基于第一至第五颜色信号执行预定图像处理来生成颜色信号。
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公开(公告)号：US08581199B2
公开(公告)日：2013-11-12
申请号：US13247025
申请日：2011-09-28
申请人： Hiroto Honda , Hideyuki Funaki , Honam Kwon
发明人： Hiroto Honda , Hideyuki Funaki , Honam Kwon
IPC分类号： G01T1/24
摘要： According to one embodiment, a solid state imaging device includes an infrared detection pixel configured to change an output potential by receiving infrared light, a non-sensitive pixel, a row select line, and a differential amplifier. An amount of change in an output potential when the non-sensitive pixel receives infrared light is smaller than an amount of change in an output potential when the infrared detection pixel receives the infrared light. The row select line is configured to apply a drive potential to both the infrared detection pixel and the non-sensitive pixel. The differential amplifier includes one input terminal to which an output potential of the infrared detection pixel is inputted and another input terminal to which an output potential of the non-sensitive pixel is inputted.
摘要翻译： 根据一个实施例，固态成像装置包括被配置为通过接收红外光来改变输出电位的红外检测像素，非敏感像素，行选择线和差分放大器。 当非敏感像素接收到红外光时，输出电位的变化量小于当红外线检测像素接收到红外光时的输出电位的变化量。 行选择线被配置为将驱动电位施加到红外检测像素和非敏感像素。 差分放大器包括输入红外线检测像素的输出电位的一个输入端子和输入非敏感像素的输出电位的另一个输入端子。
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公开(公告)号：US08338902B2
公开(公告)日：2012-12-25
申请号：US13050512
申请日：2011-03-17
申请人： Honam Kwon , Hideyuki Funaki , Hiroto Honda , Hitoshi Yagi , Ikuo Fujiwara , Masaki Atsuta , Kazuhiro Suzuki , Keita Sasaki , Koichi Ishii
发明人： Honam Kwon , Hideyuki Funaki , Hiroto Honda , Hitoshi Yagi , Ikuo Fujiwara , Masaki Atsuta , Kazuhiro Suzuki , Keita Sasaki , Koichi Ishii
IPC分类号： H01L31/024
CPC分类号： H01L27/14649 , G01J5/007 , G01J5/20 , G01J2005/068
摘要： An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a supporting unit formed for each of the pixel cell and supporting a corresponding pixel cell; and an interconnect unit formed for each reference pixel cell. Each of the pixel cells includes: a first infrared absorption film and a first heat sensitive element. The reference pixel cell includes: a second infrared absorption film and a second heat sensitive element, the second heat sensitive element having the same characteristics as characteristics of the first heat sensitive element. The third and fourth interconnects of the interconnect unit have the same electrical resistance as electrical resistance of the first and second interconnects of the supporting unit.
摘要翻译： 根据实施例的非制冷红外图像传感器包括：形成在半导体衬底上的第一区域中的多个像素单元; 形成在所述半导体衬底上的与所述像素单元的每列或每列相对应的所述半导体衬底上的第二区域中的参考像素单元; 为每个像素单元形成的支撑单元，并支撑相应的像素单元; 以及为每个参考像素单元形成的互连单元。 每个像素单元包括：第一红外线吸收膜和第一热敏元件。 参考像素单元包括：第二红外线吸收膜和第二热敏元件，第二热敏元件具有与第一热敏元件的特性相同的特性。 互连单元的第三和第四互连具有与支撑单元的第一和第二互连的电阻相同的电阻。
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公开(公告)号：US20120228506A1
公开(公告)日：2012-09-13
申请号：US13247025
申请日：2011-09-28
申请人： Hiroto Honda , Hideyuki Funaki , Honam Kwon
发明人： Hiroto Honda , Hideyuki Funaki , Honam Kwon
IPC分类号： H01L27/146
摘要： According to one embodiment, a solid state imaging device includes an infrared detection pixel configured to change an output potential by receiving infrared light, a non-sensitive pixel, a row select line, and a differential amplifier. An amount of change in an output potential when the non-sensitive pixel receives infrared light is smaller than an amount of change in an output potential when the infrared detection pixel receives the infrared light. The row select line is configured to apply a drive potential to both the infrared detection pixel and the non-sensitive pixel. The differential amplifier includes one input terminal to which an output potential of the infrared detection pixel is inputted and another input terminal to which an output potential of the non-sensitive pixel is inputted.
摘要翻译： 根据一个实施例，固态成像装置包括被配置为通过接收红外光来改变输出电位的红外检测像素，非敏感像素，行选择线和差分放大器。 当非敏感像素接收到红外光时，输出电位的变化量小于当红外线检测像素接收到红外光时的输出电位的变化量。 行选择线被配置为将驱动电位施加到红外检测像素和非敏感像素。 差分放大器包括输入红外线检测像素的输出电位的一个输入端子和输入非敏感像素的输出电位的另一个输入端子。
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公开(公告)号：US08053758B2
公开(公告)日：2011-11-08
申请号：US12549140
申请日：2009-08-27
申请人： Takashi Yamauchi , Yoshifumi Nishi , Hiroto Honda , Kei Masunishi , Shinji Murai , Masumi Saitoh
发明人： Takashi Yamauchi , Yoshifumi Nishi , Hiroto Honda , Kei Masunishi , Shinji Murai , Masumi Saitoh
IPC分类号： H01L29/08 , H01L29/15 , H01L31/0352 , H01L31/0256 , H01L31/0232
CPC分类号： H01L27/14645 , H01L27/14683 , H01L31/0352
摘要： A semiconductor device for correcting an input signal and outputting a corrected signal are provided. The semiconductor device includes a semiconductor layer, a plurality of first conductors formed on one of faces of the semiconductor layer and serving as input terminals to which a signal is input, second conductors of the number larger than that of the first conductors at density higher than that of the first conductors, formed on the other face of the semiconductor layer, a high impurity concentration region provided on the semiconductor layer side of an interface between the second conductor and the semiconductor layer, an insulating layer formed on the other face, and a plurality of third conductors formed on the insulating layer and serving as output terminals for outputting the processed signal.
摘要翻译： 提供了用于校正输入信号并输出校正信号的半导体器件。 半导体器件包括半导体层，形成在半导体层的一个表面上并用作输入信号的输入端的多个第一导体，第二导体的数量大于第一导体的密度高于 在半导体层的另一面形成的第一导体的第一导体的高杂质浓度区域设置在第二导体和半导体层之间的界面的半导体层侧，形成在另一面上的绝缘层， 多个第三导体，形成在绝缘层上并用作用于输出处理信号的输出端。
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公开(公告)号：US08045033B2
公开(公告)日：2011-10-25
申请号：US12278347
申请日：2008-06-05
申请人： Hiroto Honda , Yoshinori Ilda , Yoshitaka Egawa
发明人： Hiroto Honda , Yoshinori Ilda , Yoshitaka Egawa
CPC分类号： H04N9/045 , G06T3/4015
摘要： A solid-state image sensing device has a plurality of pixels, a read-out circuit for reading out electric signals obtained by the photoelectric conversion element, and a signal processing unit for performing signal processing for the electric signal read out from the read-out circuit. The plurality of pixels include a first pixel having a transparent film, a plurality of second pixels each having a first color filter, a plurality of third pixels each having a second color filter, and a plurality of fourth pixels each having a third color filter. The signal processing unit has a color acquisition unit for acquiring a white pixel value and first to third color pixel values, an edge judgment unit, a color separation unit and a single color pixel calculation unit.
摘要翻译： 固体摄像装置具有多个像素，用于读出由光电转换元件获得的电信号的读出电路和用于对从读出的读出的电信号进行信号处理的信号处理单元 电路。 多个像素包括具有透明膜的第一像素，每个具有第一滤色器的多个第二像素，每个具有第二滤色器的多个第三像素和具有第三滤色器的多个第四像素。 信号处理单元具有用于获取白色像素值和第一至第三颜色像素值的颜色获取单元，边缘判断单元，分色单元和单色像素计算单元。
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公开(公告)号：US07999990B2
公开(公告)日：2011-08-16
申请号：US12408302
申请日：2009-03-20
申请人： Kazuhiro Suzuki , Hiroto Honda , Hideyuki Funaki
发明人： Kazuhiro Suzuki , Hiroto Honda , Hideyuki Funaki
CPC分类号： G02B26/0808
摘要： An optical element includes a plurality of first beam bodies arranged in a first direction on a first plane and being parallel to each other, and second beam bodies placed between adjacent ones of the first beam bodies and provided parallel to the first beam bodies. The first beam body has side surfaces which face the second beam bodies adjacent thereto and are sloped so that the width in the first direction gradually decreases to the upward direction perpendicular to the first plane, the second beam body has side surfaces which face the first beam bodies adjacent thereto and are sloped so that the width in the first direction gradually increases to the upward direction perpendicular to the first plane, and as viewed in the first direction, the spacing between the first beam body and the second beam body is variable.
摘要翻译： 光学元件包括在第一平面上沿第一方向布置并彼此平行的多个第一光束体，以及放置在相邻的第一光束体之间并平行于第一光束体设置的第二光束体。 第一梁主体具有面向与其相邻的第二梁主体并且倾斜的侧表面，使得第一方向上的宽度向垂直于第一平面的向上方向逐渐减小，第二梁主体具有面向第一梁的侧表面 与其相邻并且倾斜，使得第一方向上的宽度逐渐增加到垂直于第一平面的向上方向，并且从第一方向看，第一梁体和第二梁体之间的间隔是可变的。
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公开(公告)号：US07943905B2
公开(公告)日：2011-05-17
申请号：US12709759
申请日：2010-02-22
申请人： Hiroto Honda , Hideyuki Funaki
发明人： Hiroto Honda , Hideyuki Funaki
IPC分类号： H01L25/00
CPC分类号： H01L27/14623 , H01L27/14649 , H01L27/14669
摘要： An infrared solid-state image sensor comprises: a pixel area comprising a sensitive pixel area where infrared detection pixels are arranged in a matrix form to detect incident infrared rays on the semiconductor substrate and a reference pixel area where reference pixels are provided, each of the infrared detection pixels comprising a thermoelectric conversion part, the thermoelectric conversion part comprising an infrared absorption film to absorb the incident infrared rays and convert the incident infrared rays to heat and a first thermoelectric conversion element to convert the heat obtained by the conversion in the infrared absorption film to a electric signal, each of the reference pixels comprising a second thermoelectric conversion element. Each of first ends of the reference pixels are connected to a reference potential line, and a difference between the signal potential read out from a corresponding signal line and a reference potential supplied from the reference potential line is amplified and outputted.
摘要翻译： 一种红外固态图像传感器包括：像素区域，包括敏感像素区域，其中红外检测像素以矩阵形式布置以检测半导体衬底上的入射红外线和参考像素的参考像素区域， 红外线检测像素包括热电转换部分，该热电转换部分包括用于吸收入射的红外线并将入射的红外线转换成热的红外线吸收膜和第一热电转换元件，以将通过红外吸收中的转换获得的热量转换 每个参考像素包括第二热电转换元件。 参考像素的每个第一端连接到参考电位线，并且从相应的信号线读出的信号电位与从参考电位线提供的参考电位之间的差放大并输出。
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公开(公告)号：US08735821B2
公开(公告)日：2014-05-27
申请号：US13428746
申请日：2012-03-23
申请人： Koichi Ishii , Kazuhiro Suzuki , Hiroto Honda , Hideyuki Funaki , Risako Ueno , Honam Kwon
发明人： Koichi Ishii , Kazuhiro Suzuki , Hiroto Honda , Hideyuki Funaki , Risako Ueno , Honam Kwon
IPC分类号： G01J5/20 , H01L27/146 , G01J5/14
CPC分类号： G01J5/14 , G01J5/04 , G01J5/045 , G01J5/08 , G01J5/0806 , G01J5/0853 , G01J5/10 , G01J5/22 , H01L27/14649 , H01L2224/48091 , H01L2224/48465 , H01L2924/00014 , H01L2924/00
摘要： An infrared imaging device, including: connection wiring portions arranged in matrix form on a substrate which is mounted in a package; first and second infrared detecting portions configured to convert intensity of absorbed infrared radiation into respective first and second signals, the second infrared detecting portion being smaller in thermal conductance than the first infrared detecting portion; and a lid member attached to the package so as to define an air-tight gap with the substrate, the connection wiring portions, the first and second infrared detecting portions being accommodated within the gap; wherein a degree-of-vacuum is measured within the gap and a warning issued based on the measured degree-of-vacuum.
摘要翻译： 一种红外成像装置，包括：以矩阵形式布置在安装在包装中的基板上的连接布线部分; 第一红外线检测部和第二红外线检测部，被配置为将吸收的红外辐射的强度转换为相应的第一和第二信号，第二红外线检测部的导热性比第一红外线检测部小。 以及盖构件，其附接到所述封装件以限定与所述基板的气密间隙，所述连接布线部分，所述第一和第二红外检测部分容纳在所述间隙内; 其中在所述间隙内测量真空度，并且基于所测量的真空度发出警告。
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公开(公告)号：US08629396B2
公开(公告)日：2014-01-14
申请号：US13235388
申请日：2011-09-18
申请人： Masako Ogata , Ikuo Fujiwara , Hiroto Honda , Kazuhiro Suzuki , Honam Kwon , Risako Ueno , Hitoshi Yagi , Masaki Atsuta , Koichi Ishii , Keita Sasaki , Hideyuki Funaki
发明人： Masako Ogata , Ikuo Fujiwara , Hiroto Honda , Kazuhiro Suzuki , Honam Kwon , Risako Ueno , Hitoshi Yagi , Masaki Atsuta , Koichi Ishii , Keita Sasaki , Hideyuki Funaki
IPC分类号： H01L27/146
CPC分类号： H01L27/14649 , H01L27/14632 , H01L27/14687
摘要： An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.
摘要翻译： 非制冷红外成像元件包括像素区域，器件区域和支撑衬底。 像素区域包括热敏像素。 热敏像素被布置成矩阵并且根据接收到的红外线量来改变其电流 - 电压特性。 器件区域包括驱动电路和包括MOS晶体管的读出电路中的至少一个。 驱动电路驱动热敏像素。 读出电路检测热敏像素的信号。 支撑基板设置有在像素区域下方的空腔区域和MOS晶体管。
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