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    ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
    有机薄膜晶体管及其制造方法

    公开(公告)号：US20100140596A1

    公开(公告)日：2010-06-10

    申请号：US12498910

    申请日：2009-07-07

    申请人： Yong-Young Noh ,  Seok-Ju Kang ,  Jae Bon Koo ,  In-Kyu You ,  Kang-Jun Baeg

    发明人： Yong-Young Noh ,  Seok-Ju Kang ,  Jae Bon Koo ,  In-Kyu You ,  Kang-Jun Baeg

    IPC分类号： H01L51/30 ,  H01L51/40

    CPC分类号： H01L51/052 ,  H01L51/0541 ,  H01L51/0545

    摘要： Provided is an organic thin film transistor and method of forming the same. The organic thin film transistor can decrease threshold voltage and driving voltage by forming a thin organic dielectric layer in a lamella structure using a diblock copolymer including a hydrophilic polymer with high permittivity and a hydrophobic polymer with low permittivity together. Also, the method can simplify the manufacturing process by forming an organic dielectric layer including polymers having two different physical properties through one spin coating.

    摘要翻译： 提供一种有机薄膜晶体管及其形成方法。 有机薄膜晶体管可以通过使用包含具有高介电常数的亲水性聚合物的二嵌段共聚物和具有低介电常数的疏水性聚合物在一起的层状结构中形成薄的有机介电层来降低阈值电压和驱动电压。 此外，该方法可以通过一种旋涂形成包含具有两种不同物理性质的聚合物的有机介电层来简化制造过程。

    Thin film transistor device with accurately aligned electrode patterns
    8.
    发明授权
    Thin film transistor device with accurately aligned electrode patterns 有权
    薄膜晶体管器件具有精确对准的电极图案

    公开(公告)号：US08900955B2

    公开(公告)日：2014-12-02

    申请号：US13621095

    申请日：2012-09-15

    申请人： Paul A. Cain ,  Yong-Young Noh ,  Henning Sirringhaus

    发明人： Paul A. Cain ,  Yong-Young Noh ,  Henning Sirringhaus

    IPC分类号： H01L21/336 ,  H01L51/00 ,  H01L51/10 ,  H01L29/786 ,  H01L51/05

    CPC分类号： H01L29/78663 ,  H01L29/78672 ,  H01L51/0001 ,  H01L51/0022 ,  H01L51/0023 ,  H01L51/0541 ,  H01L51/102

    摘要： An electronic device comprising an optically transparent substrate, a first electrode structure incorporating a channel, said channel being optically transparent and said electrode structure being optically opaque, at least one intermediate layer, and a photosensitive dielectric layer disposed above the at least one intermediate layer, the photosensitive dielectric layer incorporating a trench in a region essentially over said channel, the electronic device further comprising a further electrode, wherein the further electrode is located partially in the trench and partially beyond the trench such that portions of the further electrode that extend beyond the trench are separated from the at least one intermediate layer by the photosensitive dielectric layer.

    摘要翻译： 一种电子设备，包括光学透明基板，包括通道的第一电极结构，所述通道是光学透明的，并且所述电极结构是光学不透明的，至少一个中间层和设置在所述至少一个中间层上方的光敏介电层， 所述光敏介质层在基本上在所述通道上的区域中包含沟槽，所述电子器件还包括另外的电极，其中所述另外的电极部分地位于所述沟槽中并且部分地位于所述沟槽之外，使得所述另外的电极的部分延伸超过所述沟槽 沟槽通过光敏电介质层与至少一个中间层分离。

    Techniques for Device Fabrication with Self-Aligned Electrodes
    9.
    发明申请
    Techniques for Device Fabrication with Self-Aligned Electrodes 有权
    用于自对准电极的器件制造技术

    公开(公告)号：US20090166612A1

    公开(公告)日：2009-07-02

    申请号：US12225619

    申请日：2007-03-28

    申请人： Paul A. Cain ,  Yong-Young Noh ,  Henning Sirringhaus

    发明人： Paul A. Cain ,  Yong-Young Noh ,  Henning Sirringhaus

    IPC分类号： H01L51/00 ,  H01L29/78 ,  H01L21/336 ,  H01L51/30

    CPC分类号： H01L29/78663 ,  H01L29/78672 ,  H01L51/0001 ,  H01L51/0022 ,  H01L51/0023 ,  H01L51/0541 ,  H01L51/102

    摘要： This invention relates to the fabrication of electronic devices, such as thin-film transistors, in particular thin-film transistors in which patterning techniques are used for definition of electrode patterns that need to be accurately aligned with respect to underlying electrodes. The fabrication technique is applicable to various patterning techniques, such as laser ablation patterning or solution-based, direct-write printing techniques which are not capable of forming structures with a small linewidth, and/or that cannot be positioned very accurately with respect to previously deposited patterns. We thus describe self-aligned gate techniques which are applicable for both gate patterning by a subtractive technique, in particular selective laser ablation patterning, and gate patterning by an additive technique such as printing. The techniques facilitate the use of low-resolution gate patterning.

    摘要翻译： 本发明涉及诸如薄膜晶体管，特别是薄膜晶体管的电子器件的制造，其中使用图案化技术来定义需要相对于底层电极精确对准的电极图案。 该制造技术可应用于各种图案化技术，例如不能形成具有小线宽的结构的激光烧蚀图案化或基于溶液的直写印刷技术，和/或不能相对于先前的非常准确地定位 沉积图案 因此，我们描述了通过减法技术，特别是选择性激光烧蚀图案化以及通过诸如印刷的添加技术进行栅极图案化的栅极图案化的自对准栅极技术。 该技术有助于使用低分辨率栅极图案化。

    Thin film transistor with accurately aligned electrode patterns and electronic device(s) that include same
    10.
    发明授权
    Thin film transistor with accurately aligned electrode patterns and electronic device(s) that include same 有权
    具有精确对准的电极图案的薄膜晶体管和包括其的电子器件

    公开(公告)号：US08987808B2

    公开(公告)日：2015-03-24

    申请号：US12225619

    申请日：2007-03-28

    申请人： Paul A. Cain ,  Yong-Young Noh ,  Henning Sirringhaus

    发明人： Paul A. Cain ,  Yong-Young Noh ,  Henning Sirringhaus

    IPC分类号： H01L29/66 ,  H01L29/786 ,  H01L51/00 ,  H01L51/10 ,  H01L51/05

    CPC分类号： H01L29/78663 ,  H01L29/78672 ,  H01L51/0001 ,  H01L51/0022 ,  H01L51/0023 ,  H01L51/0541 ,  H01L51/102

    摘要： An electronic device comprising an optically transparent substrate, a first electrode structure incorporating a channel, said channel being optically transparent and said electrode structure being optically opaque, at least one intermediate layer, and a photosensitive dielectric layer disposed above the at least one intermediate layer, the photosensitive dielectric layer incorporating a trench in a region essentially over said channel, the electronic device further comprising a further electrode, wherein the further electrode is located partially in the trench and partially beyond the trench such that portions of the further electrode that extend beyond the trench are separated from the at least one intermediate layer by the photosensitive dielectric layer.

    摘要翻译： 一种电子设备，包括光学透明基板，包括通道的第一电极结构，所述通道是光学透明的，并且所述电极结构是光学不透明的，至少一个中间层和设置在所述至少一个中间层上方的光敏介电层， 所述光敏介质层在基本上在所述通道上的区域中包含沟槽，所述电子器件还包括另外的电极，其中所述另外的电极部分地位于所述沟槽中并且部分地位于所述沟槽之外，使得所述另外的电极的部分延伸超过所述沟槽 沟槽通过光敏电介质层与至少一个中间层分离。