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    CHARGE-CONTROLLING SEMICONDUCTOR INTEGRATED CIRCUIT
    1.
    发明申请
    CHARGE-CONTROLLING SEMICONDUCTOR INTEGRATED CIRCUIT 有权
    充电控制半导体集成电路

    公开(公告)号：US20090302805A1

    公开(公告)日：2009-12-10

    申请号：US12478065

    申请日：2009-06-04

    申请人： Yoshihiro MOTOICHI ,  Daisuke Suzuki ,  Yoshihiro Takahashi ,  Gentaro Kurokawa

    发明人： Yoshihiro MOTOICHI ,  Daisuke Suzuki ,  Yoshihiro Takahashi ,  Gentaro Kurokawa

    IPC分类号： H02J7/10

    CPC分类号： H02J7/0052 ,  G01R19/16519 ,  H03K17/0822

    摘要： Disclosed is a charge-controlling semiconductor integrated circuit including: a current-controlling MOS transistor; a current detection circuit including a 1/N size current-detecting MOS transistor; and a gate voltage control circuit, wherein the current detection circuit includes an operational amplifier circuit, a bias condition of the current-detecting MOS transistor becomes same as the current-controlling MOS transistor based on an operational amplifier circuit output, voltage drops in lines from drain electrode to a corresponding input point of the operational amplifier circuit become the same by a parasitic resistance, and when the output of the operational amplifier circuit is applied to a control terminal of the bias condition controlling transistor, the drain voltages become the same potential, and the line from the drain electrode of the current-detecting MOS transistor to the input point is formed to be redundantly arranged inside the chip so that a parasitic resistance becomes a predetermined value.

    摘要翻译： 公开了一种电荷控制半导体集成电路，包括：电流控制MOS晶体管; 电流检测电路，包括1 / N尺寸电流检测MOS晶体管; 以及栅极电压控制电路，其中电流检测电路包括运算放大器电路，电流检测用MOS晶体管的偏置状态与基于运算放大器电路输出的电流控制用MOS晶体管相同， 漏电极到运算放大器电路的对应输入点变成相同的寄生电阻，并且当运算放大器电路的输出被施加到偏置条件控制晶体管的控制端时，漏极电压变为相同的电位， 形成从电流检测用MOS晶体管的漏极到输入点的线被冗余配置在芯片的内部，使寄生电阻成为规定值。

    Charge-controlling semiconductor integrated circuit and charging apparatus
    2.
    发明授权
    Charge-controlling semiconductor integrated circuit and charging apparatus 有权
    充电控制半导体集成电路和充电装置

    公开(公告)号：US08558516B2

    公开(公告)日：2013-10-15

    申请号：US12467466

    申请日：2009-05-18

    申请人： Yoshihiro Takahashi ,  Daisuke Suzuki ,  Yoshihiro Motoichi ,  Gentaro Kurokawa

    发明人： Yoshihiro Takahashi ,  Daisuke Suzuki ,  Yoshihiro Motoichi ,  Gentaro Kurokawa

    IPC分类号： H02J7/06

    CPC分类号： H02J7/00

    摘要： A charge-controlling semiconductor integrated circuit includes a current- controlling MOS transistor which is connected between a voltage input terminal and an output terminal and controls flowing current, a substratum voltage switching circuit connected between the voltage input/output terminal and a substratum to which an input/output voltage is applied, and a voltage comparison circuit to compare the input/output voltage. The charge-controlling semiconductor integrated circuit controls the substratum voltage switching circuit based on an output of the voltage comparison circuit, and the voltage comparison circuit includes an intentional offset in a first potential direction. A level shift circuit to shift the output voltage to a potential direction opposite to the first potential direction is provided in a preceding stage of a first input terminal of the voltage comparison circuit, and the input voltage is input to a second input terminal of the voltage comparison circuit.

    摘要翻译： 电荷控制半导体集成电路包括电流控制MOS晶体管，其连接在电压输入端子和输出端子之间并控制流动电流;基极电压开关电路，连接在电压输入/输出端子与基板之间， 施加输入/输出电压，以及比较输入/输出电压的电压比较电路。 电荷控制半导体集成电路基于电压比较电路的输出控制基极电压开关电路，电压比较电路包括在第一电位方向上的有意偏移。 在电压比较电路的第一输入端子的前级设置有将输出电压移位到与第一电位方向相反的电位方向的电平移位电路，输入电压输入到电压的第二输入端子 比较电路。

    Charge-controlling semiconductor integrated circuit
    3.
    发明授权
    Charge-controlling semiconductor integrated circuit 有权
    充电控制半导体集成电路

    公开(公告)号：US08035355B2

    公开(公告)日：2011-10-11

    申请号：US12478065

    申请日：2009-06-04

    申请人： Yoshihiro Motoichi ,  Daisuke Suzuki ,  Yoshihiro Takahashi ,  Gentaro Kurokawa

    发明人： Yoshihiro Motoichi ,  Daisuke Suzuki ,  Yoshihiro Takahashi ,  Gentaro Kurokawa

    IPC分类号： H02J7/16 ,  H02J7/24

    CPC分类号： H02J7/0052 ,  G01R19/16519 ,  H03K17/0822

    摘要： Disclosed is a charge-controlling semiconductor integrated circuit including: a current-controlling MOS transistor; a current detection circuit including a 1/N size current-detecting MOS transistor; and a gate voltage control circuit, wherein the current detection circuit includes an operational amplifier circuit, a bias condition of the current-detecting MOS transistor becomes same as the current-controlling MOS transistor based on an operational amplifier circuit output, voltage drops in lines from drain electrode to a corresponding input point of the operational amplifier circuit become the same by a parasitic resistance, and when the output of the operational amplifier circuit is applied to a control terminal of the bias condition controlling transistor, the drain voltages become the same potential, and the line from the drain electrode of the current-detecting MOS transistor to the input point is formed to be redundantly arranged inside the chip so that a parasitic resistance becomes a predetermined value.

    摘要翻译： 公开了一种电荷控制半导体集成电路，包括：电流控制MOS晶体管; 电流检测电路，包括1 / N尺寸电流检测MOS晶体管; 以及栅极电压控制电路，其中电流检测电路包括运算放大器电路，电流检测用MOS晶体管的偏置状态与基于运算放大器电路输出的电流控制用MOS晶体管相同， 漏电极到运算放大器电路的对应输入点变成相同的寄生电阻，并且当运算放大器电路的输出被施加到偏置条件控制晶体管的控制端时，漏极电压变为相同的电位， 形成从电流检测用MOS晶体管的漏极到输入点的线被冗余配置在芯片的内部，使寄生电阻成为规定值。

    Charge controlling semiconductor integrated circuit
    4.
    发明授权
    Charge controlling semiconductor integrated circuit 有权
    充电控制半导体集成电路

    公开(公告)号：US08179098B2

    公开(公告)日：2012-05-15

    申请号：US12551781

    申请日：2009-09-01

    申请人： Gentaro Kurokawa ,  Yoshihiro Takahashi

    发明人： Gentaro Kurokawa ,  Yoshihiro Takahashi

    IPC分类号： H02J7/00 ,  H02J7/06 ,  H02M3/06

    CPC分类号： H02J7/0029 ,  H02M2001/322 ,  Y10T307/516 ,  Y10T307/615 ,  Y10T307/625

    摘要： Disclosed is a charge controlling semiconductor integrated circuit including: an electric current controlling transistor connected between a voltage input terminal and an output terminal to control an electric current which flows from the voltage input terminal to the output terminal; a power source monitoring circuit to detect status of input voltage of the voltage input terminal; and a transistor element connected between the voltage input terminal and a ground potential point, wherein a bypass capacitor is connected to the voltage input terminal; and the transistor element is turned on and the bypass capacitor discharges when the power source monitoring circuit detects the input voltage of the voltage input terminal is cut off.

    摘要翻译： 公开了一种充电控制半导体集成电路，包括：电流控制晶体管，连接在电压输入端子和输出端子之间，用于控制从电压输入端子流向输出端子的电流; 电源监视电路，用于检测电压输入端的输入电压状态; 以及连接在所述电压输入端子与地电位点之间的晶体管元件，其中旁路电容器连接到所述电压输入端子; 并且当电源监视电路检测到电压输入端子的输入电压被切断时，晶体管元件导通，旁路电容器放电。

    CHARGE CONTROLLING SEMICONDUCTOR INTEGRATED CIRCUIT
    5.
    发明申请
    CHARGE CONTROLLING SEMICONDUCTOR INTEGRATED CIRCUIT 有权
    充电控制半导体集成电路

    公开(公告)号：US20100060244A1

    公开(公告)日：2010-03-11

    申请号：US12551781

    申请日：2009-09-01

    申请人： Gentaro KUROKAWA ,  Yoshihiro Takahashi

    发明人： Gentaro KUROKAWA ,  Yoshihiro Takahashi

    IPC分类号： H02J7/00

    CPC分类号： H02J7/0029 ,  H02M2001/322 ,  Y10T307/516 ,  Y10T307/615 ,  Y10T307/625

    摘要： Disclosed is a charge controlling semiconductor integrated circuit including: an electric current controlling transistor connected between a voltage input terminal and an output terminal to control an electric current which flows from the voltage input terminal to the output terminal; a power source monitoring circuit to detect status of input voltage of the voltage input terminal; and a transistor element connected between the voltage input terminal and a ground potential point, wherein a bypass capacitor is connected to the voltage input terminal; and the transistor element is turned on and the bypass capacitor discharges when the power source monitoring circuit detects the input voltage of the voltage input terminal is cut off.

    摘要翻译： 公开了一种充电控制半导体集成电路，包括：电流控制晶体管，连接在电压输入端子和输出端子之间，用于控制从电压输入端子流向输出端子的电流; 电源监视电路，用于检测电压输入端的输入电压状态; 以及连接在所述电压输入端子与地电位点之间的晶体管元件，其中旁路电容器连接到所述电压输入端子; 并且当电源监视电路检测到电压输入端子的输入电压被切断时，晶体管元件导通，旁路电容器放电。

    Load torque estimation apparatus, image forming apparatus, load torque estimation method and non-transitory computer-readable information recording medium
    8.
    发明授权
    Load torque estimation apparatus, image forming apparatus, load torque estimation method and non-transitory computer-readable information recording medium 有权
    负载转矩估计装置，图像形成装置，负载转矩估计方法和非暂时计算机可读信息记录介质

    公开(公告)号：US09405281B2

    公开(公告)日：2016-08-02

    申请号：US14480763

    申请日：2014-09-09

    申请人： Takeo Seki ,  Yoshihiro Takahashi

    发明人： Takeo Seki ,  Yoshihiro Takahashi

    IPC分类号： G05B13/02 ,  G03G15/16 ,  G03G21/16

    CPC分类号： G05B13/02 ,  G03G15/1615 ,  G03G21/1647 ,  G03G2221/1657 ,  G05B13/042

    摘要： A load torque estimation apparatus inputs a controlling value for controlling the electric motor and an actually measured value of a rotational speed of the electric motor to a model to estimate load torque of the electric motor; and derives a mechanical time constant of the electric motor corresponding to the load torque estimated by the estimation part. The load torque estimation apparatus updates the mechanical time constant included in the model by using the mechanical time constant corresponding to the load torque estimated at an (n−1)th control period (where n denotes an integer greater than or equal to 2) and estimates the load torque of the electric motor at an nth control period by inputting the controlling value and the actually measured value acquired at the nth control period to the model acquired through the updating.

    摘要翻译： 负载转矩估计装置将用于控制电动机的控制值和电动机的转速的实际测量值输入到模型以估计电动机的负载转矩; 并导出与由估计部估计的负载转矩相对应的电动机的机械时间常数。 负载转矩估计装置通过使用与在第（n-1）个控制周期（其中n表示大于或等于2的整数）估计的负载转矩相对应的机械时间常数来更新包括在模型中的机械时间常数，以及 通过将在第n个控制周期获取的控制值和实际测量值输入到通过更新获得的模型，来估计第n个控制周期的电动机的负载转矩。

    Image processing apparatus, image processing method, and program
    9.
    发明授权
    Image processing apparatus, image processing method, and program 有权
    图像处理装置，图像处理方法和程序

    公开(公告)号：US08620971B2

    公开(公告)日：2013-12-31

    申请号：US13079347

    申请日：2011-04-04

    申请人： Kenji Tanaka ,  Kunio Kawaguchi ,  Kazumasa Tanaka ,  Yoshihiro Takahashi ,  Daisuke Kikuchi ,  Naohide Yamada ,  Hiroyuki Morisaki

    发明人： Kenji Tanaka ,  Kunio Kawaguchi ,  Kazumasa Tanaka ,  Yoshihiro Takahashi ,  Daisuke Kikuchi ,  Naohide Yamada ,  Hiroyuki Morisaki

    IPC分类号： G06F7/00

    CPC分类号： G06F17/30781 ,  G06F17/30017 ,  G06F17/30271

    摘要： An image processing apparatus includes: a database configured to, out of images extracted with a first frequency from the images making up a moving image content, register first layer summary data of a first size; a distance calculation block configured to calculate the distance between the first layer summary data based on the distance between vectors of which the elements are formed by the first layer summary data registered in the database; and a classification section configured to cluster into the same class the first layer summary data between which the distance calculated by the distance calculation block falls within a predetermined distance, the classification section further clustering moving image contents into a plurality of classes based on the classes into which the first layer summary data have been clustered.

    摘要翻译： 一种图像处理装置，包括：数据库，被配置为从构成运动图像内容的图像中的从第一频率提取的图像中，注册第一尺寸的第一层摘要数据; 距离计算块，其被配置为基于由所述数据库中登记的第一层摘要数据形成所述元素的向量之间的距离来计算所述第一层摘要数据之间的距离; 以及分类部，其将所述距离计算部计算出的距离落在预定距离内的第一层摘要数据进行聚类，所述分类部根据所述类别将运动图像内容进行聚类为多个类别 第一层摘要数据已被聚集。