公开(公告)号：US20180082820A1

公开(公告)日：2018-03-22

申请号：US15599552

申请日：2017-05-19

Applicant: Yongseok JUNG ,  Sungwon Kwon ,  Heebom Kim ,  Donggun Lee

Inventor： Yongseok JUNG ,  Sungwon Kwon ,  Heebom Kim ,  Donggun Lee

IPC: H01J37/302 ,  G06F17/50 ,  G01Q30/06 ,  G03F1/36

CPC classification number: H01J37/3026 ,  G01Q30/06 ,  G03F1/36 ,  G03F1/72 ,  G06F17/50 ,  G06F17/5081 ,  H01J2237/31771 ,  H01J2237/31776

Abstract: A method of adjusting a critical dimension of a reticle patterns in a reticle used to fabricate semiconductor devices can include determining respective values for a critical dimension of a plurality of reticle patterns in an image of the reticle and providing an atmospheric plasma to a first reticle pattern included in the plurality of reticle patterns, the first reticle pattern having a first value for the critical dimension that is different than a target value for the critical dimension. The atmospheric plasma may not be provided to second reticle patterns included in the plurality of reticle patterns, the second reticle patterns having a second value for the critical dimension that is about equal to the target value.

公开(公告)号：US09859100B2

公开(公告)日：2018-01-02

申请号：US15157278

申请日：2016-05-17

Applicant: D2S, Inc.

Inventor： Akira Fujimura ,  Kazuyuki Hagiwara ,  Robert C. Pack

IPC: H01J37/317 ,  H01J37/302 ,  G03F1/36 ,  G03F7/20 ,  G03F1/78

CPC classification number: H01J37/3174 ,  G03F1/36 ,  G03F1/78 ,  G03F7/2063 ,  H01J37/3023 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/31762 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31774 ,  H01J2237/31776

Abstract: A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.

公开(公告)号：US09034542B2

公开(公告)日：2015-05-19

申请号：US14257874

申请日：2014-04-21

Applicant: D2S, Inc.

Inventor： Akira Fujimura ,  Ingo Bork

IPC: G03F1/20 ,  G03F7/20 ,  G03F1/78 ,  H01J37/317 ,  B82Y10/00 ,  B82Y40/00

CPC classification number: G03F7/2063 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/78 ,  G03F7/2037 ,  G06F17/5009 ,  G06F17/5081 ,  H01J37/147 ,  H01J37/3174 ,  H01J37/3175 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776 ,  H01L21/027 ,  Y10S430/143

Abstract: In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (βf). In some embodiments, the sensitivity to changes in βf is reduced by varying the charged particle surface dosage for a portion of the pattern. Methods for forming patterns on a surface, and for manufacturing an integrated circuit are also disclosed, in which pattern sensitivity to changes in βf is reduced.

Abstract translation: 在用于对带电粒子束光刻进行压裂或掩模数据准备或掩模处理校正的方法中，确定将在表面上形成图案的多个镜头，其中确定镜头，以便将所得到的图案的灵敏度降低到 光束模糊（＆bgr; f）。 在一些实施方案中，通过改变图案的一部分的带电粒子表面剂量来减少对于b的变化的敏感性。 还公开了在表面上形成图案和用于制造集成电路的方法，其中减小了对于图像变化f的图案敏感度。

公开(公告)号：US08972908B2

公开(公告)日：2015-03-03

申请号：US13954635

申请日：2013-07-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Cheng-Hung Chen ,  Jaw-Jung Shin ,  Shy-Jay Lin ,  Wen-Chuan Wang ,  Pei-Yi Liu ,  Burn Jeng Lin

IPC: G06F17/50

CPC classification number: G03F1/78 ,  H01J37/3026 ,  H01J2237/31764 ,  H01J2237/31771

Abstract: The present disclosure provides one embodiment of an integrated circuit (IC) method. The method includes receiving an IC design layout having a feature; fracturing the feature into a plurality of polygons that includes a first polygon; assigning target points to edges of the first polygon; calculating corrected exposure doses to the first polygon, wherein each of the correct exposure doses is determined based on a respective one of the target points by simulation; determining a polygon exposure dose to the first polygon based on the corrected exposure doses; and preparing a tape-out data for lithography patterning, wherein the tape-out data defines the plurality of polygons and a plurality of polygon exposure doses paired with the plurality of polygons.

Abstract translation: 本公开提供了集成电路（IC）方法的一个实施例。 该方法包括接收具有特征的IC设计布局; 将特征压裂成包括第一多边形的多个多边形; 将目标点分配给第一多边形的边缘; 计算第一多边形的校正曝光剂量，其中通过模拟基于目标点中的相应一个确定每个正确的曝光剂量; 基于所述校正的曝光剂量确定所述第一多边形的多边形曝光剂量; 以及准备用于光刻图案化的输出数据，其中所述输出数据定义所述多个多边形以及与所述多个多边形配对的多个多边形曝光剂量。

公开(公告)号：US20140353526A1

公开(公告)日：2014-12-04

申请号：US14454140

申请日：2014-08-07

Applicant: D2S, Inc.

Inventor： Akira Fujimura

IPC: H01J37/317 ,  H01J37/147 ,  G06F17/50 ,  H01J37/302

CPC classification number: H01J37/3177 ,  G03F1/22 ,  G03F1/70 ,  G06F17/5081 ,  H01J37/3026 ,  H01J2237/31771

Abstract: A method and system for fracturing or mask data preparation for charged particle beam lithography are disclosed in which a plurality of charged particle beam shots is determined that will form a pattern on a surface using a multi-beam charged particle beam writer, where the sensitivity of the pattern on the surface to manufacturing variation is reduced by increasing edge slope.

Abstract translation: 公开了一种用于压电或掩模用于带电粒子束光刻的数据准备的方法和系统，其中确定将使用多光束带电粒子束写入器在表面上形成图案的多个带电粒子束照射，其中灵敏度 通过增加边缘坡度来减小表面上的图案对制造变化的影响。

公开(公告)号：US08745549B2

公开(公告)日：2014-06-03

申请号：US13366335

申请日：2012-02-05

Applicant: Akira Fujimura ,  Robert C. Pack

Inventor： Akira Fujimura ,  Robert C. Pack

IPC: G06F17/50

CPC classification number: H01J37/3174 ,  G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  H01J37/3026 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776

Abstract: A method for fracturing or mask data preparation or proximity effect correction or optical proximity correction or mask process correction is disclosed in which a set of charged particle beam shots is determined that is capable of forming a pattern on a surface, wherein critical dimension (CD) split is reduced through the use of overlapping shots.

Abstract translation: 公开了一种用于压裂或掩模数据准备或邻近效应校正或光学邻近校正或掩模过程校正的方法，其中确定能够在表面上形成图案的一组带电粒子束射击，其中临界尺寸（CD） 通过使用重叠的镜头减少了分割。

公开(公告)号：US20140129997A1

公开(公告)日：2014-05-08

申请号：US13801571

申请日：2013-03-13

Applicant: D2S, INC.

Inventor： Akira Fujimura ,  Kazuyuki Hagiwara ,  Robert C. Pack

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/36 ,  G03F1/78 ,  G06F17/5009 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31771 ,  H01J2237/31776

Abstract: A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.

Abstract translation: 公开了一种用于掩模过程校正或使用带电粒子束光刻在掩模版上形成图案的方法，其中将掩模版用于光学平版印刷工艺以在晶片上形成图案，其中晶片图案的灵敏度由 相对于标线图案的尺寸变化，并且对图案曝光信息进行修改，以增加晶片图案的灵敏度高的标线图案的边缘斜率。 还公开了一种用于压裂或掩模数据准备的方法，其中确定了可以使用带电粒子束光刻在掩模版上形成图案的图案曝光信息，其中掩模版将用于光学平版印刷工艺以在图案上形成图案 并且相对于标线图案的尺寸的变化计算晶片图案的灵敏度。

公开(公告)号：US20130205264A1

公开(公告)日：2013-08-08

申请号：US13366335

申请日：2012-02-05

Applicant: Akira Fujimura ,  Robert C. Pack

Inventor： Akira Fujimura ,  Robert C. Pack

IPC: G06F17/50

CPC classification number: H01J37/3174 ,  G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  H01J37/3026 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776

Abstract: A method for fracturing or mask data preparation or proximity effect correction or optical proximity correction or mask process correction is disclosed in which a set of charged particle beam shots is determined that is capable of forming a pattern on a surface, wherein critical dimension (CD) split is reduced through the use of overlapping shots.

Abstract translation: 公开了一种用于压裂或掩模数据准备或邻近效应校正或光学邻近校正或掩模过程校正的方法，其中确定能够在表面上形成图案的一组带电粒子束射击，其中临界尺寸（CD） 通过使用重叠的镜头减少了分割。

公开(公告)号：US08466440B2

公开(公告)日：2013-06-18

申请号：US13163111

申请日：2011-06-17

Applicant: Jun Yashima ,  Yasuo Kato ,  Akihito Anpo

Inventor： Jun Yashima ,  Yasuo Kato ,  Akihito Anpo

IPC: G21K5/10 ,  G03F7/00

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31771 ,  H01J2237/31776

Abstract: A charged particle beam drawing apparatus applies a predetermined dose of a charged particle beam for drawing patterns corresponding to figures included in a drawing data, in a whole of a drawing area of a workpiece, before a result of calculation of a fogging effect correction dose is obtained, wherein a proximity effect correction dose is incorporated in the predetermined dose, and the fogging effect correction dose is not incorporated in the predetermined dose, then, the charged particle beam drawing apparatus applies a predetermined dose of the charged particle beam for drawing the patterns which overlap the patterns drawn before the result of calculation of the fogging effect correction dose is obtained, in the whole of the drawing area of the workpiece, after the calculation of the fogging effect correction dose, wherein the proximity effect correction dose and the fogging effect correction dose are incorporated in the predetermined dose.

Abstract translation: 带电粒子束描绘装置在雾化效应校正剂量的计算结果是在工件的整个绘图区域中之前，将预定剂量的带电粒子束用于绘制对应于包括在绘图数据中的图形的图案 得到的，其中以预定剂量并入接近效应校正剂量，并且雾化效应校正剂量不包含在预定剂量中，然后，带电粒子束描绘装置施加预定剂量的带电粒子束以绘制图案 在计算雾化效果校正剂量之前，在整个绘图区域中获得在雾化效果校正剂量的计算结果之前绘制的图案重叠，其中邻近效应校正剂量和起雾效果 校正剂量以预定剂量掺入。

公开(公告)号：US20120221981A1

公开(公告)日：2012-08-30

申请号：US13037270

申请日：2011-02-28

Applicant: Akira Fujimura ,  Kazuyuki Hagiwara ,  Stephen F. Meier ,  Ingo Bork

Inventor： Akira Fujimura ,  Kazuyuki Hagiwara ,  Stephen F. Meier ,  Ingo Bork

IPC: G06F17/50

CPC classification number: G03F7/2061 ,  G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  G03F7/2063 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/31771

Abstract: A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.

Abstract translation: 提出了一种用于压裂或掩模数据准备的方法和系统，其中产生重叠射击以增加图案的选定部分中的剂量，从而改善转印图案的保真度和/或临界尺寸变化。 在各种实施例中，改进可能影响路径或线的端部，或方形或近似正方形的图案。 模拟用于确定将在表面上产生的图案。