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公开(公告)号：US20160094199A1
公开(公告)日：2016-03-31
申请号：US14867563
申请日：2015-09-28
CPC分类号： H03H3/04 , H03H3/0073 , H03H3/0076 , H03H7/38 , H03H9/542 , H03H9/545 , H03H9/568 , H03H9/64 , H03H9/6403 , H03H9/70 , H03H9/706 , H03H9/725 , H03H2003/0071 , H03H2003/027 , H03H2003/0464 , H03H2003/0471 , H03H2003/0478 , H03H2009/02165 , H03H2009/02173 , H03H2009/02196 , H03H2009/02204 , H03H2009/02496 , H03H2210/012 , H03H2210/023 , H03H2210/033
摘要： A resonant circuit comprises an input terminal and an output terminal and at least: a group of N resonators, where N≧1, the resonators having the same resonance frequency and the same antiresonance frequency; a first and a second impedance matching element having a non-zero reactance, the first element being in series with the group of resonators, and the second element being in parallel with the group of resonators, the resonant circuit comprising: first means for controlling the group of resonators, enabling the static capacitance of the group to be fixed at a first value; second control means, enabling the impedance of the first impedance matching element and that of the second element to be fixed at second values; the first and second values being such that the triplet of values composed of the static capacitance of the group, the impedance of the first element, and the impedance of the second element can be used to determine the following triplet of parameters: the characteristic impedance Zc of the assembly formed by the group, the first impedance matching element and the second matching element; the resonance frequency ωr of the assembly; the antiresonance frequency ωa of the assembly, in order to stabilize the impedance of the circuit at a chosen characteristic impedance.
摘要翻译： 谐振电路包括输入端子和输出端子，并且至少包括：N≥1的谐振器组，谐振器具有相同的谐振频率和相同的反谐振频率; 具有非零电抗的第一和第二阻抗匹配元件，所述第一元件与所述谐振器组串联，并且所述第二元件与所述谐振器组并联，所述谐振电路包括：第一装置，用于控制所述第一和第二阻抗匹配元件， 使得所述组的静态电容被固定为第一值; 第二控制装置，使得第一阻抗匹配元件和第二元件的阻抗能够被固定为第二值; 第一和第二值使得由组的静态电容，第一元素的阻抗和第二元素的阻抗组成的值的三元组可以用于确定以下三参数：特征阻抗Zc 由组，第一阻抗匹配元件和第二匹配元件形成的组件; 组件的谐振频率ωr; 组件的反共振频率ωa，以便在所选择的特性阻抗下稳定电路的阻抗。
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公开(公告)号：US08878419B2
公开(公告)日：2014-11-04
申请号：US13348033
申请日：2012-01-11
申请人： Takashi Miyake
发明人： Takashi Miyake
CPC分类号： H03H9/564 , H03H9/132 , H03H9/566 , H03H2003/0471
摘要： A piezoelectric device includes first and second piezoelectric resonators each including a piezoelectric thin film, an upper electrode provided on one main surface of the piezoelectric thin film, and a lower electrode provided on another main surface of the piezoelectric thin film. In the piezoelectric resonators, portions in which the upper and lower electrodes are superposed on each other with the piezoelectric thin film therebetween define piezoelectric vibrating portions that are acoustically isolated from a substrate. The first and second piezoelectric resonators are connected in series or parallel between an input terminal and an output terminal such that polarization directions of corresponding portions of the piezoelectric thin film are opposite to each other when seen from the input terminal. The first piezoelectric resonator and the second piezoelectric resonator are arranged to have different resonant frequencies of a transverse vibration mode.
摘要翻译： 压电装置包括第一和第二压电谐振器，每个压电谐振器包括压电薄膜，设置在压电薄膜的一个主表面上的上电极和设置在压电薄膜的另一个主表面上的下电极。 在压电谐振器中，上部和下部电极之间的压电薄膜彼此叠置的部分之间形成与基板隔离的压电振动部分。 第一和第二压电谐振器串联或并联连接在输入端子和输出端子之间，使得当从输入端子看时压电薄膜的对应部分的偏振方向彼此相反。 第一压电谐振器和第二压电谐振器布置成具有不同的横振模式的谐振频率。
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公开(公告)号：US20130147577A1
公开(公告)日：2013-06-13
申请号：US13666524
申请日：2012-11-01
CPC分类号： H03H9/132 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/54 , H03H9/605 , H03H9/706 , H03H2003/0471
摘要： A filter includes: a plurality of piezoelectric thin film resonators, each having a multilayered film including a lower electrode located on a substrate, a piezoelectric film located on the lower electrode, and an upper electrode located on the piezoelectric film so as to face the lower electrode, wherein at least two piezoelectric thin film resonators have thick film portions, in each of which the multilayered film is thicker in at least a part of an outer peripheral portion than in an inner portion of a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, and lengths of the thick film portions from edges of the resonance regions are different from each other in the at least two piezoelectric thin film resonators.
摘要翻译： 滤波器包括：多个压电薄膜谐振器，每个压电薄膜谐振器具有包括位于基板上的下电极的多层膜，位于下电极上的压电薄膜和位于压电薄膜上的上电极， 电极，其中至少两个压电薄膜谐振器具有厚膜部分，其中多层膜在外周部分的至少一部分中比在下电极和谐振区域的共振区域的内部部分中更厚 上电极彼此面对压电膜，并且在至少两个压电薄膜谐振器中，来自谐振区域边缘的厚膜部分的长度彼此不同。
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公开(公告)号：US20110064614A1
公开(公告)日：2011-03-17
申请号：US12736805
申请日：2009-03-02
CPC分类号： G01N5/02 , G01G3/13 , G01G3/16 , G01G3/18 , G01N1/405 , G01N33/0004 , H03B5/323 , H03H3/04 , H03H9/02157 , H03H9/132 , H03H9/56 , H03H2003/0428 , H03H2003/0435 , H03H2003/0471
摘要： Provided is a piezoelectric resonator having high frequency stability and a sensing sensor using the piezoelectric resonator. A piezoelectric resonator has a first oscillation area which is provided in a piezoelectric piece and from which a first oscillation frequency is taken out. A second oscillation area which is provided in an area different from the first oscillation area via an elastic boundary area and from which a second oscillation frequency is taken out. Excitation electrodes are provided on one surface side and another surface side of the oscillation areas across the piezoelectric piece, and a frequency difference between the first oscillation frequency and the second oscillation frequency is not less than 0.2% nor greater than 2.2% of these oscillation frequencies.
摘要翻译： 提供了一种具有高频稳定性的压电谐振器和使用压电谐振器的感测传感器。 压电谐振器具有设置在压电片中的第一振荡区域，并且从其中取出第一振荡频率。 第二振荡区域，其经由弹性边界区域设置在与第一振荡区域不同的区域中，并且从其中取出第二振荡频率。 激励电极设置在压电片的振荡区域的一个表面侧和另一个表面侧，并且第一振荡频率与第二振荡频率之间的频率差不小于这些振荡频率的0.2％或不大于2.2％ 。
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5.发明授权Manufacturing process for thin film bulk acoustic resonator (FBAR) filters 有权薄膜体声波谐振器（FBAR）滤波器的制造工艺公开(公告)号：US07802349B2
公开(公告)日：2010-09-28
申请号：US11748970
申请日：2007-05-15
申请人： Richard C. Ruby , John D. Larson , Paul D. Bradley
发明人： Richard C. Ruby , John D. Larson , Paul D. Bradley
CPC分类号： H03H3/04 , H03H3/02 , H03H9/02149 , H03H2003/0471 , Y10T29/42 , Y10T29/49002 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156
摘要： Method for fabricating an acoustical resonator on a substrate having a top surface. First, a depression in said top surface is generated. Next, the depression is filled with a sacrificial material. The filled depression has an upper surface level with said top surface of said substrate. Next, a first electrode is deposited on said upper surface. Then, a layer of piezoelectric material is deposited on said first electrode. A second electrode is deposited on the layer of piezoelectric material using a mass load lift-off process.
摘要翻译： 在具有顶面的基板上制造声学谐振器的方法。 首先，产生上表面的凹陷。 接下来，凹陷填充有牺牲材料。 填充的凹陷具有与所述基底的所述顶表面相对的上表面水平。 接下来，在所述上表面上沉积第一电极。 然后，在所述第一电极上沉积一层压电材料。 使用质量负载剥离工艺将第二电极沉积在压电材料层上。
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公开(公告)号：US07275292B2
公开(公告)日：2007-10-02
申请号：US10384199
申请日：2003-03-07
申请人： Richard C. Ruby , John D. Larson , Paul D. Bradley
发明人： Richard C. Ruby , John D. Larson , Paul D. Bradley
CPC分类号： H03H3/04 , H03H3/02 , H03H9/02149 , H03H2003/0471 , Y10T29/42 , Y10T29/49002 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156
摘要： Method for fabricating an acoustical resonator on a substrate having a top surface. First, a depression in said top surface is generated. Next, the depression is filled with a sacrificial material. The filled depression has an upper surface level with said top surface of said substrate. Next, a first electrode is deposited on said upper surface. Then, a layer of piezoelectric material is deposited on said first electrode. A second electrode is deposited on the layer of piezoelectric material using a mass load lift-off process.
摘要翻译： 在具有顶面的基板上制造声学谐振器的方法。 首先，产生上表面的凹陷。 接下来，凹陷填充有牺牲材料。 填充的凹陷具有与所述基底的所述顶表面相对的上表面水平。 接下来，在所述上表面上沉积第一电极。 然后，在所述第一电极上沉积一层压电材料。 使用质量负载剥离工艺将第二电极沉积在压电材料层上。
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公开(公告)号：US20060006965A1
公开(公告)日：2006-01-12
申请号：US11174556
申请日：2005-07-06
申请人： Motonori Ishii
发明人： Motonori Ishii
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471
摘要： An RF filter includes: one or more first piezoelectric resonators each of which is held on a principal surface of a substrate and is constituted by a first piezoelectric film and opposed first upper and lower electrodes provided on the upper and lower faces of the first piezoelectric film, respectively; and one or more second piezoelectric resonators each of which is held on the principal surface of the substrate, is constituted by a second piezoelectric film and opposed second upper and lower electrodes provided on the upper and lower faces of the second piezoelectric film, respectively, and has a resonance frequency different from that of each of the first piezoelectric resonators. At least one of the first upper and lower electrodes is made of a first electrode material and at least one of the second upper and lower electrodes is made of a second electrode material.
摘要翻译： RF滤波器包括：一个或多个第一压电谐振器，每个第一压电谐振器保持在基板的主表面上，并且由第一压电膜构成，并且设置在第一压电膜的上表面和下表面上的相对的第一上下电极 ， 分别; 并且分别保持在基板的主表面上的一个或多个第二压电谐振器分别由设置在第二压电膜的上表面和下表面上的第二压电膜和相对的第二上下电极构成，以及 具有与每个第一压电谐振器不同的谐振频率。 第一上电极和下电极中的至少一个由第一电极材料制成，并且第二上电极和下电极中的至少一个由第二电极材料制成。
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8.发明申请Film bulk acoustic wave resonator, film bulk acoustic wave resonator filter and method of manufacturing film bulk acoustic wave resonator 审中-公开薄膜体声波谐振器，薄膜体声波谐振滤波器及薄膜体声波谐振器的制造方法公开(公告)号：US20050168102A1
公开(公告)日：2005-08-04
申请号：US10909335
申请日：2004-08-03
CPC分类号： H03H9/564 , H03H3/04 , H03H9/02157 , H03H9/174 , H03H9/568 , H03H2003/023 , H03H2003/0442 , H03H2003/0471
摘要： The present invention provides a film bulk acoustic wave resonator (FBAR) filter that can keep the Q factor high. The FBAR filter comprises a first FBAR with a first resonant frequency and a second FBAR with a second resonant frequency, formed on a same substrate. The FBAR filter has such a structure that a first underlayer is formed between the substrate and a first bottom electrode layer and a second underlayer is formed between the substrate and a second bottom electrode layer, the first underlayer thickness being different from the second underlayer thickness.
摘要翻译： 本发明提供一种可以使Q因子保持高的薄膜体声波谐振器（FBAR）滤波器。 FBAR滤波器包括形成在同一衬底上的具有第一谐振频率的第一FBAR和具有第二谐振频率的第二FBAR。 FBAR滤光器具有在基板和第一底部电极层之间形成第一底层的结构，在基板和第二底部电极层之间形成第二下层，第一下层厚度与第二下层厚度不同。
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公开(公告)号：US20050090033A1
公开(公告)日：2005-04-28
申请号：US10968976
申请日：2004-10-21
申请人： Masaaki Imuri , Kenji Inoue , Eiju Komuro , Hisatoshi Saitou
发明人： Masaaki Imuri , Kenji Inoue , Eiju Komuro , Hisatoshi Saitou
IPC分类号： H01L41/22 , H01L21/00 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/253 , H01L41/29 , H03H3/02 , H03H3/04 , H03H9/56
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471 , Y10T29/42 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156
摘要： A method for manufacturing a piezo-resonator including: a first step of forming an upper electrode layer 20 on the piezoelectric film 14, a second step of coating the upper electrode layer 20 with a resist 21 and of performing patterning on the resist so as to have a shape of the upper electrode, a third step of masking the patterned resist 21 and removing the upper electrode layer 20 other than masked portions and forming two or more first upper electrodes 15a, a fourth step of removing the resist 21, a fifth step of coating the first upper electrodes 15a with a resist and performing patterning on the resist so that the first upper electrodes 15a are partially exposed, a sixth step of etching each of the exposed first upper electrodes 15a by a specified thickness to form a second upper electrode 15b, and a seventh step of removing the resist 22.
摘要翻译： 一种制造压电谐振器的方法，包括：在压电膜14上形成上电极层20的第一步骤，用抗蚀剂21涂覆上电极层20并在抗蚀剂上进行图案化的第二步骤，以便 具有上电极的形状，除了掩模部分之外掩蔽图案化抗蚀剂21和除去上电极层20并形成两个或更多个第一上电极15A的第三步骤，去除抗蚀剂21的第四步骤，第五步 使用抗蚀剂涂覆第一上电极15a并在抗蚀剂上进行图案化以使第一上电极15a部分暴露的步骤;将暴露的第一上电极15a的每一个蚀刻一定厚度以形成第六步骤 第二上电极15b，以及除去抗蚀剂22的第七步骤。
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10.发明申请公开(公告)号：US20020153965A1
公开(公告)日：2002-10-24
申请号：US09841234
申请日：2001-04-23
IPC分类号： H03H009/205
CPC分类号： H03H9/706 , H03H3/04 , H03H9/0571 , H03H9/587 , H03H2003/0471 , Y10T29/42
摘要： In an array of acoustic resonators, the effective coupling coefficient of first and second filters are individually tailored in order to achieve desired frequency responses. In a duplexer embodiment, the effective coupling coefficient of a transmit band-pass filter is lower than the effective coupling coefficient of a receive band-pass filter of the same duplexer. In one embodiment, the tailoring of the coefficients is achieved by varying the ratio of the thickness of a piezoelectric layer to the total thickness of electrode layers. For example, the total thickness of the electrode layers of the transmit filter may be in the range of 1.2 to 2.8 times the total thickness of the electrode layers of the receive filter. In another embodiment, the coefficient tailoring is achieved by forming a capacitor in parallel with an acoustic resonator within the filter for which the effective coupling coefficient is to be degraded. Preferably, the capacitor is formed of the same materials used to fabricate a film bulk acoustic resonator (FBAR). The capacitor may be mass loaded to change its frequency by depositing a metal layer on the capacitor. Alternatively, the mass loading may be provided by forming the capacitor directly on a substrate.
摘要翻译： 在声谐振器阵列中，分别对第一和第二滤波器的有效耦合系数进行定制，以实现期望的频率响应。 在双工器实施例中，发射带通滤波器的有效耦合系数低于同一双工器的接收带通滤波器的有效耦合系数。 在一个实施例中，通过改变压电层的厚度与电极层的总厚度之比来实现系数的调整。 例如，发射滤波器的电极层的总厚度可以在接收滤波器的电极层的总厚度的1.2至2.8倍的范围内。 在另一个实施例中，通过与滤波器内的声谐振器并联形成电容器来实现系数调整，有效耦合系数将被降低。 优选地，电容器由用于制造膜体声波谐振器（FBAR）的相同材料形成。 可以通过在电容器上沉积金属层来对电容器进行质量负载以改变其频率。 或者，可以通过将电容器直接形成在基板上来提供质量负载。
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