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公开(公告)号：US20050090033A1
公开(公告)日：2005-04-28
申请号：US10968976
申请日：2004-10-21
申请人： Masaaki Imuri , Kenji Inoue , Eiju Komuro , Hisatoshi Saitou
发明人： Masaaki Imuri , Kenji Inoue , Eiju Komuro , Hisatoshi Saitou
IPC分类号： H01L41/22 , H01L21/00 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/253 , H01L41/29 , H03H3/02 , H03H3/04 , H03H9/56
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471 , Y10T29/42 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156
摘要： A method for manufacturing a piezo-resonator including: a first step of forming an upper electrode layer 20 on the piezoelectric film 14, a second step of coating the upper electrode layer 20 with a resist 21 and of performing patterning on the resist so as to have a shape of the upper electrode, a third step of masking the patterned resist 21 and removing the upper electrode layer 20 other than masked portions and forming two or more first upper electrodes 15a, a fourth step of removing the resist 21, a fifth step of coating the first upper electrodes 15a with a resist and performing patterning on the resist so that the first upper electrodes 15a are partially exposed, a sixth step of etching each of the exposed first upper electrodes 15a by a specified thickness to form a second upper electrode 15b, and a seventh step of removing the resist 22.
摘要翻译： 一种制造压电谐振器的方法，包括：在压电膜14上形成上电极层20的第一步骤，用抗蚀剂21涂覆上电极层20并在抗蚀剂上进行图案化的第二步骤，以便 具有上电极的形状，除了掩模部分之外掩蔽图案化抗蚀剂21和除去上电极层20并形成两个或更多个第一上电极15A的第三步骤，去除抗蚀剂21的第四步骤，第五步 使用抗蚀剂涂覆第一上电极15a并在抗蚀剂上进行图案化以使第一上电极15a部分暴露的步骤;将暴露的第一上电极15a的每一个蚀刻一定厚度以形成第六步骤 第二上电极15b，以及除去抗蚀剂22的第七步骤。
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公开(公告)号：US07003875B2
公开(公告)日：2006-02-28
申请号：US10968976
申请日：2004-10-21
申请人： Masaaki Imura , Kenji Inoue , Eiju Komuro , Hisatoshi Saitou
发明人： Masaaki Imura , Kenji Inoue , Eiju Komuro , Hisatoshi Saitou
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471 , Y10T29/42 , Y10T29/49005 , Y10T29/49155 , Y10T29/49156
摘要： A method for manufacturing a piezo-resonator including: a first step of forming an upper electrode layer 20 on the piezoelectric film 14, a second step of coating the upper electrode layer 20 with a resist 21 and of performing patterning on the resist so as to have a shape of the upper electrode, a third step of masking the patterned resist 21 and removing the upper electrode layer 20 other than masked portions and forming two or more first upper electrodes 15a, a fourth step of removing the resist 21, a fifth step of coating the first upper electrodes 15a with a resist and performing patterning on the resist so that the first upper electrodes 15a are partially exposed, a sixth step of etching each of the exposed first upper electrodes 15a by a specified thickness to form a second upper electrode 15b, and a seventh step of removing the resist 22.
摘要翻译： 一种制造压电谐振器的方法，包括：在压电膜14上形成上电极层20的第一步骤，用抗蚀剂21涂覆上电极层20并在抗蚀剂上进行图案化的第二步骤，以便 具有上电极的形状，除了掩模部分之外掩蔽图案化抗蚀剂21和除去上电极层20并形成两个或更多个第一上电极15A的第三步骤，去除抗蚀剂21的第四步骤，第五步 使用抗蚀剂涂覆第一上电极15a并在抗蚀剂上进行图案化以使第一上电极15a部分暴露的步骤;将暴露的第一上电极15a的每一个蚀刻一定厚度以形成第六步骤 第二上电极15b，以及除去抗蚀剂22的第七步骤。
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公开(公告)号：US20050006984A1
公开(公告)日：2005-01-13
申请号：US10814120
申请日：2004-04-01
IPC分类号： H01L41/09 , H01L41/04 , H01L41/08 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/337 , H03H3/02 , H03H9/02 , H03H9/17
摘要： A thin-film bulk acoustic oscillator comprises: a base; a barrier layer disposed on the base; a lower electrode disposed on the barrier layer; a piezoelectric thin film disposed on the lower electrode; and an upper electrode disposed on the piezoelectric thin film. The piezoelectric thin film includes a columnar crystal that extends in the direction intersecting the film surface. The top surface of the piezoelectric thin film is flattened by polishing so as to have a root mean square roughness of 2 nm or smaller.
摘要翻译： 薄膜体声波振荡器包括：基座; 设置在基座上的阻挡层; 设置在阻挡层上的下电极; 设置在下电极上的压电薄膜; 以及设置在压电薄膜上的上电极。 压电薄膜包括在与膜表面相交的方向上延伸的柱状晶体。 压电薄膜的上表面通过抛光而平坦化，使得均方根粗糙度为2nm以下。
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4.发明授权公开(公告)号：US07239067B2
公开(公告)日：2007-07-03
申请号：US10811812
申请日：2004-03-30
申请人： Eiju Komuro , Hisatoshi Saitou , Takao Noguchi , Masaaki Imura
发明人： Eiju Komuro , Hisatoshi Saitou , Takao Noguchi , Masaaki Imura
摘要： A method of manufacturing a piezoelectric thin film resonator forms, after forming a piezoelectric film on a substrate so as to cover a lower electrode formed on the substrate, an electrode material layer for forming an upper electrode above the piezoelectric film, forms a mask of a predetermined form on the electrode material layer, and then etches the electrode material layer to form the upper electrode. Before a step of forming the electrode material layer, a protective layer for protecting the piezoelectric film during etching of the electrode material layer is formed so as to cover at least a part of the piezoelectric film where the upper electrode is not formed, and the electrode material layer is then formed so as to cover the protective layer.
摘要翻译： 一种制造压电薄膜谐振器的方法，在基板上形成压电膜以覆盖形成在基板上的下电极之后，形成用于在压电膜上形成上电极的电极材料层，形成 在电极材料层上形成预定形状，然后蚀刻电极材料层以形成上部电极。 在形成电极材料层的步骤之前，形成用于在蚀刻电极材料层期间保护压电膜的保护层，以覆盖不形成上部电极的压电膜的至少一部分，并且电极 然后形成材料层以覆盖保护层。
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公开(公告)号：US06989723B2
公开(公告)日：2006-01-24
申请号：US10731157
申请日：2003-12-10
申请人： Eiju Komuro , Hisatoshi Saitou , Takao Noguchi , Hidenori Abe
发明人： Eiju Komuro , Hisatoshi Saitou , Takao Noguchi , Hidenori Abe
CPC分类号： H03H9/175 , H03H3/04 , H03H9/02102 , H03H9/02149 , H03H9/174 , H03H9/605 , H03H9/706 , H03H2003/0407
摘要： A piezoelectric resonant filter includes a group of series resonators and a group of parallel resonators for forming a ladder-type filter circuit. Each of the resonators has a piezoelectric thin film having piezoelectric characteristic, and lower and upper electrodes disposed on opposite surfaces of the piezoelectric thin film for applying an excitation voltage to the piezoelectric thin film. The group of the parallel resonators exhibits a low frequency side attenuation extremum in the filter whereas the group of the series resonators exhibits a high frequency side attenuation extremum in the filter. At least one of the group of the series resonators and the group of the parallel resonators has a temperature compensating layer for bringing the temperature coefficient of the resonant frequency close to zero.
摘要翻译： 压电谐振滤波器包括一组串联谐振器和一组用于形成梯形滤波器电路的并联谐振器。 每个谐振器具有压电薄膜，压电薄膜具有压电薄膜，并且压电薄膜的相对表面上设置有用于向压电薄膜施加激励电压的下电极和上电极。 并联谐振器组在滤波器中表现出低频侧衰减极值，而串联谐振器组在滤波器中表现出高频侧衰减极值。 串联谐振器组和并联谐振器组中的至少一个具有用于使共振频率的温度系数接近零的温度补偿层。
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公开(公告)号：US07109637B2
公开(公告)日：2006-09-19
申请号：US10814120
申请日：2004-04-01
摘要： A thin-film bulk acoustic oscillator comprises: a base; a barrier layer disposed on the base; a lower electrode disposed on the barrier layer; a piezoelectric thin film disposed on the lower electrode; and an upper electrode disposed on the piezoelectric thin film. The piezoelectric thin film includes a columnar crystal that extends in the direction intersecting the film surface. The top surface of the piezoelectric thin film is flattened by polishing so as to have a root mean square roughness of 2 nm or smaller.
摘要翻译： 薄膜体声波振荡器包括：基座; 设置在基座上的阻挡层; 设置在阻挡层上的下电极; 设置在下电极上的压电薄膜; 和设置在压电薄膜上的上电极。 压电薄膜包括在与膜表面相交的方向上延伸的柱状晶体。 压电薄膜的上表面通过抛光而平坦化，使得均方根粗糙度为2nm以下。
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7.发明授权Filter device utilizing stacked resonators and acoustic coupling and branching filter using same 有权使用叠层谐振器的滤波器装置和使用其的声耦合和分支滤波器公开(公告)号：US07212083B2
公开(公告)日：2007-05-01
申请号：US10902525
申请日：2004-07-30
申请人： Kenji Inoue , Hisatoshi Saitou
发明人： Kenji Inoue , Hisatoshi Saitou
摘要： A filter device is provided which is low in power loss, small in size and operates in wide bands. The filter device includes a first signal-side resonator having an input signal electrode, an output signal electrode, a first piezoelectric film, an input electrode film, and a common electrode film being commonly used by a second signal-side resonator and sandwiching the first piezoelectric film using the input electrode film, a second signal-side resonator having a second piezoelectric film formed in layers on the first piezoelectric film, an output electrode film, a common electrode film sandwiching the second piezoelectric film using the output electrode film and being acoustically coupled to the first signal resonator, and a ground-side resonator connected between the common electrode film and a ground electrode and operating in a specified resonant frequency and in an anti-resonant frequency almost conforming to resonant frequencies in which the first and second signal-side resonators operate.
摘要翻译： 提供了一种功率损耗低，尺寸小，宽带工作的过滤装置。 滤波器装置包括：第一信号侧谐振器，具有由第二信号侧谐振器共同使用的输入信号电极，输出信号电极，第一压电膜，输入电极膜和公共电极膜，并夹持第一信号侧谐振器 使用所述输入电极膜的压电膜，具有在所述第一压电膜上形成的第二压电膜的第二信号侧谐振器，输出电极膜，使用所述输出电极膜夹住所述第二压电膜并在声学上的公共电极膜 连接到第一信号谐振器，以及接地侧谐振器，其连接在公共电极膜和接地电极之间，并以规定的谐振频率和反谐振频率工作，几乎符合共振频率，其中第一和第二信号 - 侧谐振器工作。
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公开(公告)号：US20050030126A1
公开(公告)日：2005-02-10
申请号：US10902525
申请日：2004-07-30
申请人： Kenji Inoue , Hisatoshi Saitou
发明人： Kenji Inoue , Hisatoshi Saitou
摘要： A filter device is provided which is low in power loss, small in size and operates in wide bands. The filter device includes a first signal-side resonator having an input signal electrode, an output signal electrode, a first piezoelectric film, an input electrode film, and a common electrode film being commonly used by a second signal-side resonator and sandwiching the first piezoelectric film using the input electrode film, a second signal-side resonator having a second piezoelectric film formed in layers on the first piezoelectric film, an output electrode film, a common electrode film sandwiching the second piezoelectric film using the output electrode film and being acoustically coupled to the first signal resonator, and a ground-side resonator connected between the common electrode film and a ground electrode and operating in a specified resonant frequency and in an anti-resonant frequency almost conforming to resonant frequencies in which the first and second signal-side resonators operate.
摘要翻译： 提供了一种功率损耗低，尺寸小，宽带工作的过滤装置。 滤波器装置包括：第一信号侧谐振器，具有由第二信号侧谐振器共同使用的输入信号电极，输出信号电极，第一压电膜，输入电极膜和公共电极膜，并夹持第一信号侧谐振器 使用所述输入电极膜的压电膜，具有在所述第一压电膜上形成的第二压电膜的第二信号侧谐振器，输出电极膜，使用所述输出电极膜夹住所述第二压电膜并在声学上的公共电极膜 连接到第一信号谐振器，以及接地侧谐振器，其连接在公共电极膜和接地电极之间，并以规定的谐振频率和反谐振频率工作，几乎符合共振频率，其中第一和第二信号 - 侧谐振器工作。
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9.发明授权公开(公告)号：US07348714B2
公开(公告)日：2008-03-25
申请号：US10901382
申请日：2004-07-29
申请人： Kenji Inoue , Hisatoshi Saitou
发明人： Kenji Inoue , Hisatoshi Saitou
CPC分类号： H03H9/175 , H03H9/02102 , H03H9/174
摘要： A piezoelectric resonator includes; a lower electrode 24 formed on a substrate 11; a piezoelectric film 23 formed on the lower electrode 24; an upper electrode 25 formed on the piezoelectric film 23 and obtaining, in collaboration with the lower electrode 24, a signal having a predetermined resonance frequency by a propagation of a bulk acoustic wave inside the piezoelectric film 23; and an acoustic multilayer reflective film 28 including an SiO2 film 28a having a predetermined acoustic impedance and an AIN film 28b having an acoustic impedance higher than the SiO2 film 28a, and reflecting the bulk acoustic wave, the SiO2 film 28a and the AIN film 28b being alternately stacked on the upper electrode 25, and the SiO2 film 28a being in contact with the upper electrode 25.
摘要翻译： 压电谐振器包括： 形成在基板11上的下电极24; 形成在下电极24上的压电膜23; 形成在压电膜23上的上电极25，通过压电膜23内的体声波的传播，与下电极24协作获得具有预定谐振频率的信号; 以及包括具有预定声阻抗的SiO 2膜28a和具有高于SiO 2膜28的声阻抗的AIN膜28b的声学多层反射膜28 并且反射体声波，SiO 2膜28a和AIN膜28b交替堆叠在上电极25上，并且SiO 2膜28 a与上电极25接触。
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10.发明授权Filter device capable of obtaining attenuation characteristic of sharpness in narrow band width and branching filter using the same 有权能够获得窄带宽度的锐度衰减特性的滤波器装置及使用其的分支滤波器公开(公告)号：US07170370B2
公开(公告)日：2007-01-30
申请号：US10843568
申请日：2004-05-12
申请人： Kenji Inoue , Hisatoshi Saitou
发明人： Kenji Inoue , Hisatoshi Saitou
CPC分类号： H03H9/6426 , H03H9/605
摘要： In a filter device 10 constituted by circuit elements formed on a single substrate 11, the circuit elements includes a first wing section 14 formed between an input signal electrode 12 and an output signal electrode 13, first resonators 15a, 15b, 15c located in the first wiring section 14 and having a predetermined resonance frequency, second wiring sections 17a, 17b, 17c, 17d formed between the first wiring section 14 and a ground electrode 16, second resonators 18a, 18b, 18c, 18d located in the second wiring sections 17a, 17b, 17c, 17d and having an anti-resonance frequency forming a pass-band with the predetermined resonance frequency of the first resonators 15a, 15b, 15c. An effective electric and mechanical coupling factor of the second resonator 18a is different from those of the other resonators 15a, 15b, 15c, 18b, 18c, 18d.
摘要翻译： 在由形成在单个基板11上的电路元件构成的滤波器装置10中，电路元件包括形成在输入信号电极12和输出信号电极13之间的第一翼部分14，第一谐振器15a，15b，15c， 在第一配线部14中具有规定的共振频率，在第一配线部14和接地电极16之间形成的第二配线部17a，17b，17c，17d，第二谐振器18a，18b，18c ，18d，位于第二配线部分17a，17b，17c，17d中，并且具有形成具有第一谐振器15a，15b，15c的预定谐振频率的通带的反共振频率。 第二谐振器18a的有效的电耦合和机械耦合系数与其它谐振器15a，15b，15c，18b，18c，18d的有效电耦合系数和机械耦合系数不同。
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