Abstract:
A structure of a photoconductive film related to a target of an image pickup tube of the photo conductivity type is disclosed. This photoconductive film is formed from mainly Se and Te is added in a central part thereof. Further, As, which is considered to form a deep trap level which captures electrons in Se and GaF.sub.3, etc. which form negative space charges by capturing electrons in Se are added in the region adjacent to the region where Te exists. In addition, a thickness of film in the region where GaF.sub.3, etc. exists is selected to be thinner (not smaller than 20 .ANG. and not larger than 90 .ANG.) than a value which has been adopted so far.
Abstract:
A photoconductive member is provided with increased sensitivity to radiation incident thereupon and with increased photo-yield in response thereto by means of a multi-layered, sandwich-type construction based upon the provision of successive layers of sensitizing material over corresponding successive layers of conducting material. The photoconductive member comprises at least two composite layers formed one above the other on an insulating substrate, each composite layer comprising a first layer of material capable of conducting charge and a second layer of material comprising polar molecules disposed upon the charge-conducting material layer in such a manner that successive layers of polar molecules are adsorbed and retained in an oriented fashion on successive layers of the charge-conducting material. In combination, the alternating layers of charge-conducting material and polar molecules increase photo-yield in response to a given quantum of incident radiation and also increase the range of wavelength of incident radiation to which the photoconductive member is responsive. The sandwich-type construction permits photoconductor sensitivity to be increased as a function of the number of layers of conducting material and polar molecules used to form the photoconductive surface. The multi-layered construction also exhibits reduced sensitivity to the degrading effects of impurities, is adapted to convenient fabrication, and exhibits extended lifetime.
Abstract:
A composite photosensitive material of enhanced sensitivity to, and absorption of, incident radiation, wherein an array of particles of an electrically conducting material is embedded in and dispersed through a semiconducting matrix transparent to the wavelengths of interest, the particles having sizes of from about 1 to about 100 nanometers and having volume fractions of at least about 10 percent. The composite material is usable in photosensitive device applications such as detectors, photocells, photodiodes, and vidicons. Sensitivity to infrared radiation is particularly high where the matrix has a dielectric constant of at least about 10. The preferred particle material for enhanced infrared sensitivity is silver or gold, and the preferred matrix is silicon of CuInSe.sub.2.
Abstract:
An apparatus is disclosed for the examination and inspection of integrated devices such as integrated circuits. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed. For some embodiments of the invention, the photoemissive structure is deposited directly onto the integrated device. In some embodiments, the incidence angle of the x-rays is varied to allow internal three-dimensional structures of the integrated device to be determined. In some embodiments, the recorded image is compared with a reference data to enable inspection for manufacturing quality control.
Abstract:
The present invention improves sensitivity of the ultraviolet band of a photoelectric surface. A photoelectric surface includes a window material that transmits ultraviolet rays, a conductive film that is formed on the window material and has conductivity, an intermediate film 4 that is formed on the conductive film and is formed of MgF2, and a photoelectric conversion film that is formed on the intermediate film 4 and is formed of CsTe. Since the photoelectric surface includes the intermediate film 4 formed of MgF2, the sensitivity of the ultraviolet band is improved.
Abstract:
An electron filtering layer placed on a photocathode of a UV light detector allows to selectively filter out electrons generated from a photoconversion of long wavelengths. The filter may be tuned by selecting the material and the thickness of the electron filtering layer. By means of the filtering layer, background noise due to visible parts of the spectrum may be efficiently suppressed. Applications of the invention include a solar-blind flame and/or smoke detector.
Abstract:
A system is disclosed for the examination and inspection of integrated devices such as integrated circuits using 3-D laminography. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed. In some embodiments, the incidence angle of the x-rays is varied to gather multiple images that allow internal three-dimensional structures of the integrated device to be determined using computed laminography. In some embodiments, the recorded images are compared with reference data to enable inspection for manufacturing quality control.
Abstract:
An apparatus is disclosed for the examination and inspection of integrated devices such as integrated circuits. X-rays are transmitted through the integrated device, and are incident on a photoemissive structure that absorbs x-rays and emits electrons. The electrons emitted by the photoemissive structure are shaped by an electron optical system to form a magnified image of the emitted electrons on a detector. This magnified image is then recorded and processed. For some embodiments of the invention, the photoemissive structure is deposited directly onto the integrated device. In some embodiments, the incidence angle of the x-rays is varied to allow internal three-dimensional structures of the integrated device to be determined. In some embodiments, the recorded image is compared with a reference data to enable inspection for manufacturing quality control.
Abstract:
A method for forming an adhesion layer in contact with a first surface of a substrate and a surface of a layer having electrically conductive properties using electrophotographic imaging compound as a mask is provided. The adhesion layer improves the lamination properties of the electrically conductive layer to the substrate. The improved lamination properties to facilitate and increase the reliability and quality of a resulting product having an electronic circuit formed in accordance with the present invention. The method disclosed herein is well suited for use with rigid polymeric substrates and flexible polymeric substrates.
Abstract:
The input surface of a photocathode consisting of a membrane of p-type silicon is modified to improve it's sensitivity. The p-type concentration is locally increased and the surface is coated with silicon nitride.