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公开(公告)号：US20170015019A1
公开(公告)日：2017-01-19
申请号：US15124245
申请日：2015-03-06
发明人： Keiichi KANBAYASHI
CPC分类号： B28D5/007 , B24B27/0633 , B28D5/045 , C09K3/1463 , Y02P70/179
摘要： The present invention is a method for slicing a workpiece, including: forming a wire row by a wire spirally wound between a plurality of wire guides and traveling in an axial direction, and pressing a workpiece against the wire row while supplying a processing liquid containing abrasive grains to a contact portion between the workpiece and the wire, wherein a used portion of the abrasive grains are subjected to a treatment with a mixed liquid of sulfuric acid and hydrogen peroxide, and the abrasive grains subjected to the treatment are reused for the slicing of a workpiece. This makes it possible to slice a workpiece with suppressing contamination of a wafer with metal impurities when abrasive grains are reused in slicing a workpiece by use of a wire saw.
摘要翻译： 本发明是一种用于切割工件的方法，包括：通过螺旋形缠绕在多个导线器之间并沿轴向行进的线形成线列，并且将工件压靠在线列上，同时提供含有磨料的处理液 将颗粒与工件和焊丝之间的接触部分接触，其中将磨粒的使用部分用硫酸和过氧化氢的混合液进行处理，并将经过处理的磨粒重新用于切片 工件。 这使得可以通过使用线锯在磨削工件时重复使用磨料颗粒时，以金属杂质抑制晶片的污染来切割工件。
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92.发明申请METHOD OF MANUFACTURING EPITAXIAL WAFER AND SILICON-BASED SUBSTRATE FOR EPITAXIAL GROWTH 审中-公开外延生长和外延生长的硅基底材制造方法公开(公告)号：US20160365239A1
公开(公告)日：2016-12-15
申请号：US15120924
申请日：2015-02-10
发明人： Kazunori HAGIMOTO , Masaru SHINOMIYA , Keitaro TSUCHIYA , Hirokazu GOTO , Ken SATO , Hiroshi SHIKAUCHI , Shoichi KOBAYASHI , Hirotaka KURIMOTO
CPC分类号： H01L21/0254 , C30B25/183 , C30B29/403 , H01L21/02378 , H01L21/02381 , H01L21/0243 , H01L21/02458 , H01L29/2003
摘要： A method of manufacturing an epitaxial wafer having an epitaxial layer on a silicon-based substrate, the method of manufacturing the epitaxial wafer including epitaxially growing a semiconductor layer on the silicon-based substrate after applying terrace processing to an outer peripheral portion of the silicon-based substrate. As a result, the method of manufacturing the epitaxial wafer having the epitaxial layer on the silicon-based substrate in which an epitaxial wafer which is completely free from cracks can be obtained, is provided.
摘要翻译： 一种制造在硅基衬底上具有外延层的外延晶片的方法，所述外延晶片的制造方法包括：在对所述硅基衬底的外周部分进行平台处理之后，在所述硅基衬底上外延生长半导体层， 基底。 结果，可以获得在硅基衬底上具有外延层的外延晶片的制造方法，其中可以获得完全没有裂纹的外延晶片。
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93.发明申请SEMICONDUCTOR SUBSTRATE FOR FLASH LAMP ANNEAL, ANNEAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开用于闪光灯罩，半导体器件的半导体衬底，半导体器件和制造半导体器件的方法公开(公告)号：US20160351415A1
公开(公告)日：2016-12-01
申请号：US15117269
申请日：2015-01-26
发明人： Tsuyoshi OHTSUKI , Hiroshi TAKENO
IPC分类号： H01L21/324 , H01L29/36 , H01L29/32 , H01L21/265 , H01L21/268
CPC分类号： H01L21/3242 , H01L21/265 , H01L21/26513 , H01L21/2686 , H01L29/32 , H01L29/36
摘要： A semiconductor substrate for flash lamp anneal is used in a manufacturing process of performing ion implantation to form a p-n junction on a semiconductor substrate surface and recovering an ion implantation defect by the flash lamp anneal, carbon concentration of the semiconductor substrate being 0.5 ppma or less. Consequently, it is possible to provide the semiconductor substrate for flash lamp anneal which can easily and surely prevent the ion implantation defect from remaining in a device using a flash lamp anneal process.
摘要翻译： 用于闪光灯退火的半导体衬底用于执行离子注入以在半导体衬底表面上形成pn结的制造工艺，并通过闪光灯退火来恢复离子注入缺陷，半导体衬底的碳浓度为0.5ppma以下 。 因此，可以提供用于闪光灯退火的半导体衬底，其可以容易且可靠地防止离子注入缺陷残留在使用闪光灯退火工艺的器件中。
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公开(公告)号：US20160333496A1
公开(公告)日：2016-11-17
申请号：US15112653
申请日：2015-02-03
CPC分类号： C30B15/203 , C30B15/14 , C30B15/20 , C30B15/22 , C30B29/06
摘要： An apparatus for producing a silicon single crystal by a Czochralski method with a chamber having a heater therein to heat a raw material and to cool the chamber by a coolant, including: measuring an inlet temperature, outlet temperature, and flow rate in a passage of the coolant to cool the chamber with flowing in the chamber; calculating a removed heat quantity from the chamber based on the measured values of the inlet temperature, outlet temperature, and flow rate; controlling heater power based on the value of the removed heat quantity. This provides an apparatus which can pull a single crystal in a crystal diameter and a crystal pulling rate closer to the target values by controlling the heater power based on a removed heat quantity from the chamber calculated by the measured values of temperatures and a flow rate of the coolant.
摘要翻译： 一种用Czochralski法生产硅单晶的装置，其中具有加热器的室，用于加热原料并用冷却剂冷却室，包括：测量入口温度，出口温度和流速 所述冷却剂在所述室中流动时冷却所述室; 基于入口温度，出口温度和流量的测量值计算从室中去除的热量; 基于去除的热量的值控制加热器功率。 这提供了一种装置，其可以通过基于通过测量的温度和流量计算出的来自腔室的去除热量来控制加热器功率，从而将晶体直径的单晶和晶体拉拔速率拉近到目标值 冷却液。
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公开(公告)号：US20160303765A1
公开(公告)日：2016-10-20
申请号：US15100378
申请日：2014-11-27
IPC分类号： B28D5/00 , H01L21/66 , H01L21/304 , B28D5/04 , B24B27/06
CPC分类号： B28D5/0082 , B24B27/0633 , B28D5/045 , H01L21/304 , H01L22/12
摘要： Method for slicing a workpiece, including measuring a crystal axis orientation while holding a workpiece with a workpiece holder, setting the workpiece holder to a wire saw in such a manner that the measured crystal axis orientation is maintained, then adjusting a sliced plane orientation, pressing the workpiece against a wire row to slice the workpiece; the workpiece holder includes a portion slidable while holding the workpiece and a portion for fixing the slide portion, after measuring the crystal axis orientation, sliding the slide portion to move to the workpiece holder center in a manner that the measured crystal axis orientation is maintained, fixing the slide portion, setting the workpiece holder to the wire saw, then adjusting the sliced plane orientation, and slicing the workpiece. This enables an orientation measurement without limitation of distance between an orientation measuring instrument and plane to be measured can inhibit warpage deterioration and workpiece breakage.
摘要翻译： 对工件进行切割的方法，包括在用工件夹持器保持工件的同时测量晶轴取向，将工件夹持器固定到线锯，使得保持测量的晶轴取向，然后调整切片平面取向，压制 工件对着线排切割工件; 工件保持器包括在保持工件时可滑动的部分和用于固定滑动部分的部分，在测量晶轴方向之后，以保持测量的晶轴取向的方式滑动滑动部分移动到工件保持架中心， 固定滑动部分，将工件夹具设置到线锯上，然后调整切片平面方向，并切割工件。 这样，在取向测定装置与被测定面之间的距离不受限制的情况下，能够抑制翘曲变形和工件破损。
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96.发明申请公开(公告)号：US20160300768A1
公开(公告)日：2016-10-13
申请号：US15036915
申请日：2014-11-12
发明人： Hiroyuki KAMADA , Ryoji HOSHI
CPC分类号： H01L22/12 , G01N15/06 , G01N27/00 , G01N27/04 , G01N27/041 , H01L22/14 , H01L33/025
摘要： A method for evaluating concentration of defect in silicon single crystal substrate, defect being formed by particle beam irradiation in silicon single crystal substrate, including the steps of: measuring a resistivity of silicon single crystal substrate, followed by irradiating silicon single crystal substrate with particle beam, re-measuring resistivity of silicon single crystal substrate after irradiation; determining each carrier concentration in silicon single crystal substrate before and after irradiation on basis of measured results of resistivity before and after particle beam irradiation to calculate rate of change of carrier concentration; and evaluating concentration of VV defect on basis of rate of change of carrier concentration, VV defect being made of a silicon atom vacancy and being formed by particle beam irradiation in silicon single crystal substrate. The method can simply evaluate concentration of VV defect formed in silicon single crystal substrate by particle beam irradiation.
摘要翻译： 一种用于评估硅单晶衬底中的缺陷浓度的方法，在硅单晶衬底中通过粒子束照射形成的缺陷，包括以下步骤：测量硅单晶衬底的电阻率，然后用粒子束照射硅单晶衬底 ，重新测量照射后硅单晶衬底的电阻率; 基于粒子束照射前后的电阻率测定结果，确定辐照前后硅单晶衬底中的载流子浓度，计算载流子浓度变化率; 根据载流子浓度变化率，VV缺陷由硅原子空位构成，并通过硅单晶衬底中的粒子束照射形成VV缺陷的浓度。 该方法可以简单地评估通过粒子束照射在硅单晶衬底中形成的VV缺陷的浓度。
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公开(公告)号：US20160250776A1
公开(公告)日：2016-09-01
申请号：US15027157
申请日：2014-10-27
发明人： Keiichi KANBAYASHI
CPC分类号： B28D5/045 , B24B27/0633 , B28D7/02
摘要： A method for slicing workpiece reusing a wire used for previous slicing of a workpiece to slice a subsequent workpiece by which the workpiece is pressed against a wire row and sliced, the wire row being formed of the wire spirally wound between a plurality of wire guides and travels in an axial-direction, where wire tension at the time of slicing the workpiece is set to a value in the range of 87 to 95% of wire tension in the previous slicing of the workpiece, a new wire supply amount at the time of slicing the workpiece is set to a value in the range of 125% or more of a new wire supply amount in the previous slicing of the workpiece, and the wire is reused to slice the subsequent workpiece.
摘要翻译： 一种用于切割工件的方法，该工件重新使用用于先前切割工件的线材以切割随后的工件，通过该工件将工件压靠在线排并切割，线排由螺旋地缠绕在多个线导向器和 沿着轴向移动，其中在将工件切割时的线张力设定为在先前的工件切割中的线张力的87至95％的范围内的值， 将工件切片设定为在先前的工件切割中的新的丝线供给量的125％以上的范围内的值，并且将线重新用于切割随后的工件。
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公开(公告)号：US20160197008A1
公开(公告)日：2016-07-07
申请号：US14916289
申请日：2014-08-22
发明人： Isao YOKOKAWA , Hiroji AGA , Hiroshi FUJISAWA
IPC分类号： H01L21/762 , H01L21/02
CPC分类号： H01L21/76254 , H01L21/02052 , H01L21/02057 , H01L21/30604
摘要： A method for manufacturing bonded wafer including: producing bonded wafer having thin-film on its base wafer by an ion implantation delamination method, and reducing film thickness of the thin-film, wherein the step of reducing the film thickness includes a stage of reducing the film thickness by sacrificial oxidation treatment or vapor phase etching, wherein the method for manufacturing bonded wafer further includes a cleaning step of cleaning the bonded wafer exposing the delamination surface just before the step of reducing the film thickness, wherein the cleaning step includes a stage of performing a wet cleaning by successively dipping the bonded wafer to plural of cleaning baths, and wherein the wet cleaning is performed without applying ultrasonic in each of the cleaning baths in the wet cleaning. The method enables to clean bonded wafer exposing delamination surface remaining damage of ion implantation using a cleaning line in a strict control level.
摘要翻译： 一种接合晶片的制造方法，包括：通过离子注入分层方法在其基底晶片上制造具有薄膜的接合晶片，并且还原薄膜的膜厚，其中，降低薄膜厚度的步骤包括： 通过牺牲氧化处理或气相蚀刻的膜厚度，其中用于制造接合晶片的方法还包括清洁步骤，清洁在刚好在降低膜厚度的步骤之前暴露脱层表面的接合晶片，其中清洁步骤包括 通过将接合的晶片连续地浸渍到多个清洗槽中进行湿式清洗，并且其中在湿式清洗中，在每个清洗槽中不进行超声波处理，进行湿式清洗。 该方法能够在严格的控制水平下使用清洁管线来清洁粘合的晶片暴露分层表面残留的离子注入损伤。
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公开(公告)号：US20160193711A1
公开(公告)日：2016-07-07
申请号：US14915756
申请日：2014-08-22
发明人： Yuki TANAKA , Kazuya SATO , Syuichi KOBAYASHI
IPC分类号： B24B37/005
CPC分类号： B24B37/005 , B24B37/20 , B24B49/12
摘要： The present invention provides a method for evaluating a polishing pad by which a life of a polishing pad to polish a wafer is evaluated, the method being characterized in that a quantity of polishing residues deposited on the polishing pad is measured, and the life of the polishing pad is evaluated based on a measurement value provided by the measurement. Consequently, it is possible to provide the method for evaluating a polishing pad and the method for polishing a wafer that enable immediately evaluating the life of the polishing pad and also enable suppressing a reduction in productivity and a yield ratio at the time of polishing the wafer.
摘要翻译： 本发明提供了一种用于评价抛光垫的方法，通过该抛光垫，抛光垫的寿命用于抛光晶片，该方法的特征在于测量抛光垫上沉积的抛光残余物的量， 基于由测量提供的测量值来评估抛光垫。 因此，可以提供用于评估抛光垫的方法和用于抛光晶片的方法，其能够立即评估抛光垫的寿命，并且还能够抑制抛光时的生产率和屈服比的降低 。
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公开(公告)号：US09378999B2
公开(公告)日：2016-06-28
申请号：US14427151
申请日：2013-10-11
发明人： Hiroji Aga , Toru Ishizuka
IPC分类号： H01L21/46 , H01L21/762 , H01L21/02 , H01L21/265 , H01L21/311
CPC分类号： H01L21/76254 , H01L21/02238 , H01L21/02255 , H01L21/26506 , H01L21/31111
摘要： A method for manufacturing SOI wafer of forming an oxide film on a bond wafer of a semiconductor single crystal substrate, forming an ion implanted layer into the bond wafer by implanting ions of at least one kind of gas in hydrogen and rare gases through the oxide film, bonding together an ion implanted front surface of the bond wafer and base wafer front surface via the oxide film, thereafter delaminating the bond wafer along the ion implanted layer, and thereby fabricating an SOI wafer. The oxide film is formed on the bond wafer such that on a back surface it is made thicker than the oxide film on a bonded face. The method for manufacturing SOI wafer capable of suppressing scratches and SOI film thickness abnormality caused by warped shapes of the SOI and bond wafers after delamination where it has been delaminated by an ion implantation delamination method.
摘要翻译： 一种用于制造在半导体单晶衬底的接合晶片上形成氧化膜的SOI晶片的方法，通过将至少一种气体中的至少一种气体的离子注入到氢气和稀有气体中而通过氧化膜形成离子注入层到接合晶片 通过氧化膜将接合晶片和基底晶片前表面的离子注入前表面接合在一起，然后沿离子注入层分层接合晶片，从而制造SOI晶片。 氧化膜形成在接合晶片上，使得其在背面上比粘结面上的氧化物膜厚。 制造SOI晶片的制造方法，其能够通过离子注入分层方法分层后，分解后的SOI和接合晶片的翘曲形状而抑制划痕和SOI膜厚异常。
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