公开(公告)号：US08314018B2

公开(公告)日：2012-11-20

申请号：US12901005

申请日：2010-10-08

申请人： Akihisa Shimomura ,  Naoki Okuno ,  Masaki Koyama ,  Yasuhiro Jinbo

发明人： Akihisa Shimomura ,  Naoki Okuno ,  Masaki Koyama ,  Yasuhiro Jinbo

IPC分类号： H01L21/425 ,  H01L21/46

CPC分类号： H01L21/76254 ,  H01L27/1229 ,  H01L27/1251 ,  H01L27/1262 ,  H01L27/1266 ,  H01L29/66772

摘要： A first embrittlement layer is formed by doping a first single-crystal semiconductor substrate with a first ion; a second embrittlement layer is formed by doping a second single-crystal semiconductor substrate with a second ion; the first and second single-crystal semiconductor substrates are bonded to each other; the first single-crystal semiconductor film is formed over the second single-crystal semiconductor substrate by a first heat treatment; an insulating substrate is bonded over the first single-crystal semiconductor film; and the first and second single-crystal semiconductor films are formed over the insulating substrate by a second heat treatment. A dose of the first ion is higher than that of the second ion and a temperature of the first heat treatment is lower than that of the second heat treatment.

摘要翻译： 通过用第一离子掺杂第一单晶半导体衬底形成第一脆化层; 通过用第二离子掺杂第二单晶半导体衬底形成第二脆化层; 第一和第二单晶半导体衬底彼此接合; 通过第一热处理在第二单晶半导体衬底上形成第一单晶半导体膜; 绝缘基板接合在第一单晶半导体膜上; 并且通过第二热处理在绝缘基板上形成第一和第二单晶半导体膜。 第一离子的剂量高于第二离子，第一热处理的温度低于第二热处理的温度。

公开(公告)号：US20120264346A1

公开(公告)日：2012-10-18

申请号：US13445113

申请日：2012-04-12

申请人： Akihisa Shimomura ,  Kaoru Hatano

发明人： Akihisa Shimomura ,  Kaoru Hatano

IPC分类号： H05B33/10

CPC分类号： H05B33/10

摘要： To provide an electroluminescent device in which an element substrate provided with a light-emitting element and a sealing substrate are bonded to each other without causing thermal damage to the light-emitting element and which is formed using an electroluminescent material. A sheet 108 in which layers of at least two different kinds of metals are stacked is formed in a peripheral portion of one or both of the element substrate 102 provided with an EL element 104 and a sealing substrate 106 bonded to the element substrate 102 so as to face each other. Further, the sheet is irradiated with a focused beam, and the irradiation portion of the sheet is heated, whereby at least two kinds of metals are alloyed, and the element substrate and the sealing substrate are bonded to each other by heat generated in the alloying.

摘要翻译： 为了提供一种电致发光器件，其中设置有发光元件的元件基板和密封基板彼此接合而不会对发光元件造成热损伤，并且使用电致发光材料形成。 在其中设置有EL元件104的元件基板102和与元件基板102接合的密封基板106的一个或两个的周边部分中形成有堆叠至少两种不同类型的金属层的片材108，以便 相互面对面 此外，用聚焦光束照射片材，并且片材的照射部分被加热，由此将至少两种金属合金化，并且元件基板和密封基板通过在合金化中产生的热量彼此接合 。

公开(公告)号：US20110318908A1

公开(公告)日：2011-12-29

申请号：US13227146

申请日：2011-09-07

申请人： Sho KATO ,  Hidekazu MIYAIRI ,  Akihisa SHIMOMURA

发明人： Sho KATO ,  Hidekazu MIYAIRI ,  Akihisa SHIMOMURA

IPC分类号： H01L21/268

CPC分类号： H01L27/1266 ,  B23K26/0884 ,  B23K2101/006 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/67017 ,  H01L21/67225 ,  H01L27/1255 ,  H01L27/1285

摘要： The present invention is a semiconductor manufacturing apparatus by which an impurity can be introduced into an active layer at a low and a stable concentration in order to form semiconductor elements that have little variation in threshold voltage. In the semiconductor manufacturing apparatus that includes a washing unit; an impurity introduction unit used to attach the impurity to the surface of the semiconductor film; a laser crystallization unit used to crystallize the semiconductor film to which an impurity has been attached; and transfer robots, the amount of the impurity attached to the semiconductor film is controlled by the length of time of exposure of the substrate in the impurity introduction unit, and the semiconductor film is crystallized while a crystalline semiconductor film that contains an impurity at low concentration is formed simultaneously by laser crystallization.

摘要翻译： 本发明是一种半导体制造装置，通过该半导体制造装置可以以低和稳定的浓度将杂质引入有源层，以形成阈值电压变化小的半导体元件。 在包括洗涤单元的半导体制造装置中， 用于将杂质附着到半导体膜的表面的杂质引入单元; 用于使已经附着有杂质的半导体膜结晶的激光结晶单元; 并且传送机器人时，通过在杂质导入单元中的衬底的曝光时间长度来控制附着到半导体膜的杂质的量，并且半导体膜在含有低浓度杂质的结晶半导体膜时结晶 通过激光结晶同时形成。

公开(公告)号：US20110300690A1

公开(公告)日：2011-12-08

申请号：US13187754

申请日：2011-07-21

申请人： Akihisa SHIMOMURA ,  Tatsuya MIZOI ,  Hidekazu MIYAIRI ,  Koichiro TANAKA

发明人： Akihisa SHIMOMURA ,  Tatsuya MIZOI ,  Hidekazu MIYAIRI ,  Koichiro TANAKA

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  H01L21/02002 ,  H01L21/02038 ,  H01L21/3043 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772 ,  H01L51/5206 ,  H01L2251/554

摘要： To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.

摘要翻译： 提供一种制造半导体器件的方法，其中在多个位置处转移的半导体膜之间的空间变窄。 具有第一突起的第一接合衬底附接到基底衬底。 然后，第一接合基板在第一突起处分离，使得第一半导体膜形成在基底基板上。 接下来，具有第二突起的第二接合基板被附接到基底基板，使得第二突起被放置在与形成第一半导体膜的区域不同的区域中。 随后，第二接合基板在第二突起处分离，使得第二半导体膜形成在基底基板上。 在第二接合基板中，与第二接合基板垂直的方向（深度方向）上的每个第二突起的宽度大于首先形成的第一半导体膜的膜厚。

公开(公告)号：US20110287605A1

公开(公告)日：2011-11-24

申请号：US13198171

申请日：2011-08-04

申请人： Hideomi SUZAWA ,  Shinya SASAGAWA ,  Akihisa SHIMOMURA ,  Junpei MOMO ,  Motomu KURATA ,  Taiga MURAOKA ,  Kosei NEI

发明人： Hideomi SUZAWA ,  Shinya SASAGAWA ,  Akihisa SHIMOMURA ,  Junpei MOMO ,  Motomu KURATA ,  Taiga MURAOKA ,  Kosei NEI

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light.

摘要翻译： 在单晶半导体基板的表面上形成绝缘膜，在单晶半导体基板中通过用离子束照射单晶半导体基板通过绝缘膜形成脆性区域，在绝缘膜上形成接合层， 通过将支撑基板和单晶半导体基板之间的接合层插入到单晶半导体基板的支撑基板上，将单晶半导体基板分割为脆性区域，将单晶半导体基板分离成单晶半导体层， 所述支撑基板对残留在所述单晶半导体层上的所述脆性区域的一部分进行第一干蚀刻处理，对经过所述第一蚀刻处理的所述单晶半导体层的表面进行第二干蚀刻处理， 具有激光的晶体半导体层。

公开(公告)号：US08034724B2

公开(公告)日：2011-10-11

申请号：US11826228

申请日：2007-07-13

申请人： Akihisa Shimomura ,  Hidekazu Miyairi ,  Fumito Isaka ,  Yasuhiro Jinbo ,  Junya Maruyama

发明人： Akihisa Shimomura ,  Hidekazu Miyairi ,  Fumito Isaka ,  Yasuhiro Jinbo ,  Junya Maruyama

IPC分类号： H01L21/31

CPC分类号： H01L21/02683 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

摘要： It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10−7/° C. to 38×10−7/° C., preferably 6×10−7/° C. to 31.8×10−7/° C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is −500 N/m to +50 N/m, preferably −150 N/m to 0 N/m after the heating step.

摘要翻译： 本发明的目的是提供一种制造晶体硅器件和半导体器件的方法，其中可以抑制衬底，基底保护膜和晶体硅膜中的裂纹的形成。 首先，在基板上形成包含半导体膜的层，并加热。 基板的热膨胀系数为6×10-7 /℃至38×10-7 /℃，优选为6×10-7 /℃至31.8×10-7 /℃。接下来， 用激光束照射包含半导体膜的层，使半导体膜结晶化，形成结晶半导体膜。 包括半导体膜的层的总应力在加热步骤之后为-500N / m至+ 50N / m，优选为-150N / m至0N / m。

公开(公告)号：US08003483B2

公开(公告)日：2011-08-23

申请号：US12399047

申请日：2009-03-06

申请人： Hideomi Suzawa ,  Shinya Sasagawa ,  Akihisa Shimomura ,  Junpei Momo ,  Motomu Kurata ,  Taiga Muraoka ,  Kosei Nei

发明人： Hideomi Suzawa ,  Shinya Sasagawa ,  Akihisa Shimomura ,  Junpei Momo ,  Motomu Kurata ,  Taiga Muraoka ,  Kosei Nei

IPC分类号： H01L21/76

CPC分类号： H01L21/76254

摘要： Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light.

摘要翻译： 在单晶半导体基板的表面上形成绝缘膜，在单晶半导体基板中通过用离子束照射单晶半导体基板通过绝缘膜形成脆性区域，在绝缘膜上形成接合层， 通过将支撑基板和单晶半导体基板之间的接合层插入到单晶半导体基板的支撑基板上，将单晶半导体基板分割为脆性区域，将单晶半导体基板分离成单晶半导体层， 所述支撑基板对残留在所述单晶半导体层上的所述脆性区域的一部分进行第一干蚀刻处理，对经过所述第一蚀刻处理的所述单晶半导体层的表面进行第二干蚀刻处理， 具有激光的晶体半导体层。

公开(公告)号：US07994021B2

公开(公告)日：2011-08-09

申请号：US11881285

申请日：2007-07-25

申请人： Hidekazu Miyairi ,  Hironobu Shoji ,  Akihisa Shimomura ,  Eiji Higa ,  Tomoaki Moriwaka ,  Shunpei Yamazaki

发明人： Hidekazu Miyairi ,  Hironobu Shoji ,  Akihisa Shimomura ,  Eiji Higa ,  Tomoaki Moriwaka ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L27/1266 ,  H01L27/1288 ,  H01L29/66765

摘要： A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.

摘要翻译： 提供一种形成半导体器件的方法，包括形成在第一衬底的一个面上吸收光的层的步骤，在吸收光的层上提供第二衬底的步骤，提供掩模以对抗的步骤 第一基板的另一面，以及通过用激光束照射通过掩模吸收光的层，将吸收光的层的一部分转印到第二基板的步骤。

公开(公告)号：US07989316B2

公开(公告)日：2011-08-02

申请号：US12824775

申请日：2010-06-28

申请人： Akihisa Shimomura ,  Tatsuya Mizoi ,  Hidekazu Miyairi ,  Koichiro Tanaka

发明人： Akihisa Shimomura ,  Tatsuya Mizoi ,  Hidekazu Miyairi ,  Koichiro Tanaka

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  H01L21/02002 ,  H01L21/02038 ,  H01L21/3043 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772 ,  H01L51/5206 ,  H01L2251/554

摘要： To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.

摘要翻译： 提供一种制造半导体器件的方法，其中在多个位置处转移的半导体膜之间的空间变窄。 具有第一突起的第一接合衬底附接到基底衬底。 然后，第一接合基板在第一突起处分离，使得第一半导体膜形成在基底基板上。 接下来，具有第二突起的第二接合基板被附接到基底基板，使得第二突起被放置在与形成第一半导体膜的区域不同的区域中。 随后，第二接合基板在第二突起处分离，使得第二半导体膜形成在基底基板上。 在第二接合基板中，与第二接合基板垂直的方向（深度方向）上的每个第二突起的宽度大于首先形成的第一半导体膜的膜厚。

公开(公告)号：US07943885B2

公开(公告)日：2011-05-17

申请号：US11433569

申请日：2006-05-15

申请人： Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Atsuo Isobe

发明人： Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Atsuo Isobe

IPC分类号： B23K26/06

CPC分类号： H01L21/02675 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/268 ,  H01L21/283 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/14625

摘要： By laser beam being slantly incident to the diffractive optics, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the device has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

摘要翻译： 通过激光束倾斜入射到衍射光学器件，发生像散等像，并且激光束的形状在照射表面或其附近被制成线性的。 由于该装置具有非常简单的配置，所以光学调节更容易，并且该装置的尺寸变得紧凑。 此外，由于光束相对于照射体倾斜入射，所以可以防止返回光束。