公开(公告)号：US12148629B2

公开(公告)日：2024-11-19

申请号：US18516238

申请日：2023-11-21

Applicant: Applied Materials, Inc.

Inventor： Kang Zhang ,  Junqi Wei ,  Yueh Sheng Ow ,  Kelvin Boh ,  Yuichi Wada ,  Ananthkrishna Jupudi ,  Sarath Babu

IPC: H01L21/48 ,  H01L21/02 ,  H01L21/322 ,  H01L21/50 ,  H01L21/60 ,  H01L21/67 ,  H01L21/768 ,  H01L23/00

Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.

公开(公告)号：US12148597B2

公开(公告)日：2024-11-19

申请号：US18168467

申请日：2023-02-13

Applicant: Applied Materials, Inc.

Inventor： Saravjeet Singh ,  Kenneth D. Schatz ,  Alan Tso ,  Marlin Wijekoon ,  Dimitri Kioussis

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/311

Abstract: The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.

公开(公告)号：US12148475B2

公开(公告)日：2024-11-19

申请号：US17705744

申请日：2022-03-28

Applicant: Applied Materials, Inc.

Inventor： Chang Seok Kang ,  Tomohiko Kitajima ,  Gill Yong Lee ,  Qian Fu ,  Sung-Kwan Kang ,  Takehito Koshizawa ,  Fredrick Fishburn

IPC: G11C16/04 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

Abstract: Described is a memory string including at least one select gate for drain (SGD) transistor and at least one memory transistor in a vertical hole extending through a memory stack on a substrate. The memory stack comprises alternating word lines and dielectric material. There is at least one select-gate-for-drain (SGD) transistor in a first vertical hole extending through the memory stack, the select-gate-for-drain (SGD) transistor comprising a first gate material. At least one memory transistor is in a second vertical hole extending through the memory stack, the at least one memory transistor comprising a second gate material different from the first gate material.

公开(公告)号：US12146217B2

公开(公告)日：2024-11-19

申请号：US17590614

申请日：2022-02-01

Applicant: Applied Materials, Inc.

Inventor： Kaushal Gangakhedkar ,  Jonathan Frankel ,  Colin C. Neikirk ,  Pravin K. Narwankar

IPC: C23C16/44 ,  A61K9/16 ,  C23C16/455

Abstract: A reactor for coating particles includes a vacuum chamber configured to hold particles to be coated, a vacuum port to exhaust gas from the vacuum chamber via the outlet of the vacuum chamber, a chemical delivery system configured to flow a process gas into the particles via a gas inlet on the vacuum chamber, one or more vibrational actuators located on a first mounting surface of the vacuum chamber, and a controller configured to cause the one or more vibrational actuators to generate a vibrational motion in the vacuum chamber sufficient to induce a vibrational motion in the particles held within the vacuum chamber.

公开(公告)号：US20240376596A1

公开(公告)日：2024-11-14

申请号：US18781825

申请日：2024-07-23

Applicant: Applied Materials, Inc.

Inventor： Jonathan Frankel ,  Colin C. Neikirk ,  Pravin K. Narwankar ,  Quoc Truong ,  Govindraj Desai ,  Sekar Krishnasamy ,  Shrikant Swaminathan

IPC: C23C16/44 ,  B01F27/051 ,  B01F27/07 ,  B01F27/072 ,  B01F27/112 ,  B01F27/70 ,  B01J19/00 ,  B01J19/18 ,  C23C16/455

Abstract: A reactor for coating particles includes a stationary vacuum chamber that has a lower portion that forms a half-cylinder and an upper portion and that holds a bed of particles to be coated, a vacuum port in the upper portion of the chamber, a paddle assembly, and a gas injection assembly that includes a vaporizer to convert a first liquid to a first reactant or precursor gas, a manifold to receive the first reactant or precursor gas from the vaporizer, and a plurality of channels leading from the manifold to a plurality of apertures located in the lower portion of the chamber.

公开(公告)号：US12144101B2

公开(公告)日：2024-11-12

申请号：US18373128

申请日：2023-09-26

Applicant: Applied Materials, Inc.

Inventor： Costel Biloiu ,  David T. Blahnik ,  Wai-Ming Tam ,  Charles T. Carlson ,  Frank Sinclair

IPC: H05H7/02 ,  H05H7/12 ,  H05H9/00

Abstract: An exciter for a high frequency resonator. The exciter may include an exciter coil inner portion, extending along an exciter axis, an exciter coil loop, disposed at a distal end of the exciter coil inner portion. The exciter may also include a drive mechanism, including at least a rotation component to rotate the exciter coil loop around the exciter axis.

公开(公告)号：US12144090B2

公开(公告)日：2024-11-12

申请号：US18082452

申请日：2022-12-15

Applicant: Applied Materials, Inc.

Inventor： James Carducci ,  Richard C. Fovell ,  Larry D. Elizaga ,  Silverst Rodrigues ,  Thai Cheng Chua ,  Philip Allan Kraus

IPC: H05B6/64 ,  H05B6/80

Abstract: Embodiments disclosed herein include a housing for a source assembly. In an embodiment, the housing comprises a conductive body with a first surface and a second surface opposite from the first surface, and a plurality of openings through a thickness of the conductive body between the first surface and the second surface. In an embodiment, the housing further comprises a channel into the first surface of the conductive body, and a cover over the channel. In an embodiment, a first stem over the cover extends away from the first surface, and a second stem over the cover extends away from the first surface. In an embodiment, the first stem and the second stem open into the channel.

公开(公告)号：US12142534B2

公开(公告)日：2024-11-12

申请号：US17194825

申请日：2021-03-08

Applicant: Applied Materials, Inc.

Inventor： Sankuei Lin ,  Ajay Bhatnagar ,  Nitin Ingle

IPC: H01L27/092 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

Abstract: Processing methods may be performed to expose a contact region on a semiconductor substrate. The methods may include selectively removing a first region of a silicon material between source/drain regions of a semiconductor substrate to expose a first region of oxide material. The methods may include forming a liner over the first region of oxide material and contacting second regions of the silicon material proximate the source/drain regions of the semiconductor substrate. The methods may also include selectively removing the second regions of the silicon material proximate the source/drain regions of the semiconductor substrate to expose a second region of the oxide material. The methods may further include selectively removing the second region of the oxide material from a surface of a contact in the semiconductor structure.

公开(公告)号：US12142458B2

公开(公告)日：2024-11-12

申请号：US17137296

申请日：2020-12-29

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Farzad Houshmand ,  Philip A. Kraus ,  Abhishek Chowdhury ,  John C. Forster ,  Kallol Bera

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  H01L21/67 ,  H05H1/24 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

Abstract: Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

公开(公告)号：US12138732B2

公开(公告)日：2024-11-12

申请号：US17121467

申请日：2020-12-14

Applicant: Applied Materials, Inc.

Inventor： Asheesh Jain ,  Sameer Deshpande

IPC: B24B37/04 ,  B24B57/02

Abstract: Embodiments herein include carrier loading stations and methods related thereto which may be used to beneficially remove nano-scale and/or micron-scale particles adhered to a bevel edge of a substrate before polishing of the substrate. By removing such contaminates, e.g., loosely adhered particles of dielectric material, from the bevel edge, contamination of the polishing interface can be avoided thus preventing and/or substantially reducing scratch related defectivity associated therewith.