摘要:
[Problem] Provided is a polishing composition that can sufficiently maintain a high polishing rate for a barrier layer and an insulating film and suppress the occurrence of a surface defect such as erosion or fang.[Solution] Provided is a polishing composition which is used in the application to polish a polishing object having a barrier layer, a metal wiring layer and an insulating film, the polishing composition including abrasive grains, an oxidant, a metal corrosion inhibitor, a pH adjusting agent and water, in which an aspect ratio of abrasive grains is 1.22 or less and a ratio D90/D10 of a diameter D90 of particles when a cumulative particle weight from the fine particle side reaches 90% of the total particle weight to a diameter D10 of particles when the cumulative particle weight from the fine particle side reaches 10% of the total particle weight of the entire particles is 1.5 or more in a particle size distribution of the abrasive grains determined by a laser diffraction scattering method.
摘要:
A polishing method includes a polishing process of polishing a surface to be polished of an object by relatively rotating a holding fixture and a polishing pad with the surface to be polished of the object held on the holding fixture being pressed against and placed in contact with the polishing pad, while supplying a polishing composition onto the polishing pad. During the polishing process, the object held on the holding fixture turns around with the surface to be polished of the object facing the polishing pad to change the orientation of the object.
摘要:
A cleaning agent for an alloy material is provided. The cleaning agent has a pH in a range between 1.5 and 4, inclusive, and contains an anionic surfactant having an SO3M group (where M represents a counter ion). It is preferable that the cleaning agent for an alloy material further contains an organic acid. A method for producing an alloy material is also provided. The method includes a step for cleaning the alloy material using the cleaning agent for an alloy material.
摘要:
A polishing composition of the present invention is to be used for polishing an object including a portion containing a group III-V compound material. The polishing composition contains an oxidizing agent and an anticorrosive agent. The anticorrosive agent is preferably a nitrogen-containing organic compound, such as 1H-1,2,4-triazole and benzotriazole, or an organic compound having a carboxyl group, for example, dicarboxylic acid, such as malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, malic acid, and tartaric acid, or tricarboxylic acid, such as citric acid.
摘要:
A polishing composition of the present invention contains abrasive grains each having a surface with protrusions. Parts of the abrasive grains have larger particle diameters than the volume-based average particle diameter of the abrasive grains, and the average of values respectively obtained by dividing a height of each protrusion on the surface of each abrasive grain belonging to the parts of the abrasive grains by the width of a base portion of the same protrusion is 0.170 or more. Protrusions on the surfaces of abrasive grains belonging to the parts of the abrasive grains that have larger particle diameters than the volume-based average particle diameter of the abrasive grains have an average height of 3.5 nm or more. The polishing composition has a content of an organic alkali of 100 mmol or less per kilogram of the abrasive grains in the polishing composition.
摘要:
A polishing composition comprising the following components (a) to (g): (a) an abrasive which is at least one member selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide and titanium oxide, (b) a polyalkyleneimine, (c) at least one member selected from the group consisting of guinaldic acid and its derivatives, (d) at least one member selected from the group consisting of glycine, null-alanine, histidine and their derivatives, (e) at least one member selected from the group consisting of benzotriazole and its derivatives, (f) hydrogen peroxide, and (g) water.
摘要:
A polishing composition comprising: (a) an abrasive, (b) a compound to form a chelate with copper ions (c) a compound to provide a protective layer-forming function to a copper layer, (d) hydrogen peroxide, and (e) water, wherein the abrasive of component (a) has a primary particle size within a range of from 50 to 120 nm.
摘要:
The present disclosure relates to surface modified silica, where the surface of the silica is modified by a quaternary ammonium-based polymer. Modification of the silica surface in this manner allows for production of silica particles with a high zeta potential and minimal change in particle size.
摘要:
A method for manufacturing a silica sol according to an embodiment of the present invention includes: a step of preparing a silica sol reaction liquid by hydrolyzing and polycondensing an alkoxysilane or a condensate thereof using an alkali catalyst in a solvent; and at least one of a step of concentrating the silica sol reaction liquid by an ultrasonic atomization separation method and a step of replacing the silica sol reaction liquid with water by the ultrasonic atomization separation method.
摘要:
To provide a polishing composition that can polish titanium nitride film at a higher polishing removal rate with respect to the polishing removal rate for silicon oxide film (specifically, a high selection ratio expressed removal rate titanium as polishing for nitride film/polishing removal rate for silicon oxide film) and that has high dispersion stability. A polishing composition containing abrasive grains, an acid, a surfactant, and an oxidizing agent, wherein the abrasive grains have a positive zeta potential, the acid is an inorganic acid, the surfactant contains a compound having a polypropylene glycol structure, the oxidizing agent is hydrogen peroxide, and the pH is 2 or more and 4 or less.