POLISHING COMPOSITION
    91.
    发明申请
    POLISHING COMPOSITION 有权
    抛光组合物

    公开(公告)号:US20150315418A1

    公开(公告)日:2015-11-05

    申请号:US14440216

    申请日:2013-09-30

    IPC分类号: C09G1/02

    摘要: [Problem] Provided is a polishing composition that can sufficiently maintain a high polishing rate for a barrier layer and an insulating film and suppress the occurrence of a surface defect such as erosion or fang.[Solution] Provided is a polishing composition which is used in the application to polish a polishing object having a barrier layer, a metal wiring layer and an insulating film, the polishing composition including abrasive grains, an oxidant, a metal corrosion inhibitor, a pH adjusting agent and water, in which an aspect ratio of abrasive grains is 1.22 or less and a ratio D90/D10 of a diameter D90 of particles when a cumulative particle weight from the fine particle side reaches 90% of the total particle weight to a diameter D10 of particles when the cumulative particle weight from the fine particle side reaches 10% of the total particle weight of the entire particles is 1.5 or more in a particle size distribution of the abrasive grains determined by a laser diffraction scattering method.

    摘要翻译: [问题]提供一种可以充分保持阻挡层和绝缘膜的高抛光速度并抑制诸如腐蚀或a牙等表面缺陷的发生的抛光组合物。 [解决方案]提供一种抛光组合物,其用于抛光具有阻挡层,金属布线层和绝缘膜的抛光对象的抛光组合物,所述抛光组合物包括磨粒,氧化剂,金属腐蚀抑制剂,pH 调整剂和水,其中当颗粒的一个颗粒的累积粒子数达到总颗粒重量的90%至直径的90%时,磨粒的纵横比为1.22或更小,颗粒直径D90的比D90 / D10 当通过激光衍射散射法确定的磨粒的粒度分布中,当微细颗粒侧的累积粒子重量达到整个颗粒的总颗粒重量的10%时颗粒的D10为1.5以上。

    POLISHING METHOD AND HOLDER
    92.
    发明申请
    POLISHING METHOD AND HOLDER 审中-公开
    抛光方法和保持器

    公开(公告)号:US20150306727A1

    公开(公告)日:2015-10-29

    申请号:US14671506

    申请日:2015-03-27

    IPC分类号: B24B37/02 B24B37/30

    CPC分类号: B24B37/02 B24B37/30

    摘要: A polishing method includes a polishing process of polishing a surface to be polished of an object by relatively rotating a holding fixture and a polishing pad with the surface to be polished of the object held on the holding fixture being pressed against and placed in contact with the polishing pad, while supplying a polishing composition onto the polishing pad. During the polishing process, the object held on the holding fixture turns around with the surface to be polished of the object facing the polishing pad to change the orientation of the object.

    摘要翻译: 抛光方法包括通过相对旋转保持固定件和抛光垫来抛光被抛光物体的抛光工艺,抛光垫被保持在保持夹具上的被处理物体的待抛光表面被按压并与其接触 抛光垫,同时将抛光组合物供应到抛光垫上。 在抛光过程中,保持在夹具上的物体与面对抛光垫的物体抛光表面一起转动,以改变物体的取向。

    CLEANING AGENT FOR ALLOY MATERIAL, AND METHOD FOR PRODUCING ALLOY MATERIAL
    93.
    发明申请
    CLEANING AGENT FOR ALLOY MATERIAL, AND METHOD FOR PRODUCING ALLOY MATERIAL 审中-公开
    合金材料清洁剂及合金材料的制造方法

    公开(公告)号:US20150140906A1

    公开(公告)日:2015-05-21

    申请号:US14395988

    申请日:2013-04-24

    IPC分类号: C11D11/00 C11D1/22

    摘要: A cleaning agent for an alloy material is provided. The cleaning agent has a pH in a range between 1.5 and 4, inclusive, and contains an anionic surfactant having an SO3M group (where M represents a counter ion). It is preferable that the cleaning agent for an alloy material further contains an organic acid. A method for producing an alloy material is also provided. The method includes a step for cleaning the alloy material using the cleaning agent for an alloy material.

    摘要翻译: 提供了一种用于合金材料的清洁剂。 该清洗剂的pH值在1.5〜4的范围内,含有SO 3 M基的阴离子表面活性剂(M表示抗衡离子)。 优选的是,合金材料用清洗剂还含有有机酸。 还提供了一种合金材料的制造方法。 该方法包括使用合金材料用清洁剂清洗合金材料的步骤。

    POLISHING COMPOSITION
    94.
    发明申请
    POLISHING COMPOSITION 审中-公开
    抛光组合物

    公开(公告)号:US20140342560A1

    公开(公告)日:2014-11-20

    申请号:US14359258

    申请日:2012-11-21

    IPC分类号: C09G1/04 H01L21/306

    摘要: A polishing composition of the present invention is to be used for polishing an object including a portion containing a group III-V compound material. The polishing composition contains an oxidizing agent and an anticorrosive agent. The anticorrosive agent is preferably a nitrogen-containing organic compound, such as 1H-1,2,4-triazole and benzotriazole, or an organic compound having a carboxyl group, for example, dicarboxylic acid, such as malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, malic acid, and tartaric acid, or tricarboxylic acid, such as citric acid.

    摘要翻译: 本发明的抛光组合物用于抛光包含含III-V族化合物的部分的物体。 抛光组合物含有氧化剂和防腐蚀剂。 防腐剂优选为1H-1,2,4-三唑和苯并三唑等含氮有机化合物或具有羧基的有机化合物,例如二羧酸,如丙二酸,琥珀酸,戊二酸 酸,己二酸,庚二酸,马来酸,邻苯二甲酸,苹果酸和酒石酸,或三羧酸如柠檬酸。

    POLISHING COMPOSITION, AND POLISHING METHOD AND SUBSTRATE PRODUCTION METHOD USING SAME
    95.
    发明申请
    POLISHING COMPOSITION, AND POLISHING METHOD AND SUBSTRATE PRODUCTION METHOD USING SAME 有权
    抛光组合物,抛光方法和基板生产方法

    公开(公告)号:US20140335762A1

    公开(公告)日:2014-11-13

    申请号:US14363060

    申请日:2012-11-15

    IPC分类号: C09G1/02

    摘要: A polishing composition of the present invention contains abrasive grains each having a surface with protrusions. Parts of the abrasive grains have larger particle diameters than the volume-based average particle diameter of the abrasive grains, and the average of values respectively obtained by dividing a height of each protrusion on the surface of each abrasive grain belonging to the parts of the abrasive grains by the width of a base portion of the same protrusion is 0.170 or more. Protrusions on the surfaces of abrasive grains belonging to the parts of the abrasive grains that have larger particle diameters than the volume-based average particle diameter of the abrasive grains have an average height of 3.5 nm or more. The polishing composition has a content of an organic alkali of 100 mmol or less per kilogram of the abrasive grains in the polishing composition.

    摘要翻译: 本发明的抛光组合物含有各自具有突起表面的磨粒。 磨粒的一部分具有比磨粒的体积基平均粒径更大的粒径,以及分别通过将属于磨料部分的每个磨粒的表面上的每个突起的高度除以平均值 相同突起的基部宽度的晶粒为0.170以上。 属于具有比磨粒的体积基平均粒径更大的粒径的磨粒部分的磨粒表面上的突起具有3.5nm以上的平均高度。 该研磨用组合物的研磨用组合物中的每一千克磨粒的有机碱含量为100mmol以下。

    Polishing composition and polishing method employing it
    96.
    发明申请
    Polishing composition and polishing method employing it 失效
    抛光组合物和抛光方法

    公开(公告)号:US20020096659A1

    公开(公告)日:2002-07-25

    申请号:US09985490

    申请日:2001-11-05

    IPC分类号: C09K005/00 C09K013/00

    摘要: A polishing composition comprising the following components (a) to (g): (a) an abrasive which is at least one member selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide and titanium oxide, (b) a polyalkyleneimine, (c) at least one member selected from the group consisting of guinaldic acid and its derivatives, (d) at least one member selected from the group consisting of glycine, null-alanine, histidine and their derivatives, (e) at least one member selected from the group consisting of benzotriazole and its derivatives, (f) hydrogen peroxide, and (g) water.

    摘要翻译: 一种抛光组合物,其包含以下组分(a)至(g):(a)选自二氧化硅,氧化铝,氧化铈,氧化锆和氧化钛中的至少一种的研磨剂,(b) 聚亚烷基亚胺,(c)选自桂皮酸及其衍生物的至少一种,(d)选自甘氨酸,α-丙氨酸,组氨酸及其衍生物中的至少一种,(e) 选自苯并三唑及其衍生物的组中的至少一种,(f)过氧化氢和(g)水。

    Polishing composition and polishing method employing it
    97.
    发明申请
    Polishing composition and polishing method employing it 有权
    抛光组合物和抛光方法

    公开(公告)号:US20020043027A1

    公开(公告)日:2002-04-18

    申请号:US09928996

    申请日:2001-08-15

    IPC分类号: C09K003/14

    摘要: A polishing composition comprising: (a) an abrasive, (b) a compound to form a chelate with copper ions (c) a compound to provide a protective layer-forming function to a copper layer, (d) hydrogen peroxide, and (e) water, wherein the abrasive of component (a) has a primary particle size within a range of from 50 to 120 nm.

    摘要翻译: 1.一种抛光组合物,包括:(a)研磨剂,(b)与铜离子形成螯合物的化合物(c)向铜层提供保护层形成功能的化合物,(d)过氧化氢和(e )水,其中组分(a)的研磨剂的初级粒度在50至120nm的范围内。

    POLISHING COMPOSITION, POLISHING METHOD AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

    公开(公告)号:US20240182751A1

    公开(公告)日:2024-06-06

    申请号:US18526615

    申请日:2023-12-01

    发明人: Masashi ABE

    IPC分类号: C09G1/02

    CPC分类号: C09G1/02

    摘要: To provide a polishing composition that can polish titanium nitride film at a higher polishing removal rate with respect to the polishing removal rate for silicon oxide film (specifically, a high selection ratio expressed removal rate titanium as polishing for nitride film/polishing removal rate for silicon oxide film) and that has high dispersion stability.
    A polishing composition containing abrasive grains, an acid, a surfactant, and an oxidizing agent, wherein the abrasive grains have a positive zeta potential, the acid is an inorganic acid, the surfactant contains a compound having a polypropylene glycol structure, the oxidizing agent is hydrogen peroxide, and the pH is 2 or more and 4 or less.