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    Fuel gas calorie control method and device
    92.
    发明申请
    Fuel gas calorie control method and device 有权
    燃气热量控制方法及装置

    公开(公告)号：US20060234171A1

    公开(公告)日：2006-10-19

    申请号：US11358714

    申请日：2006-02-22

    Applicant: Hiroshi Tanabe ,  Hidekazu Yamashita

    Inventor： Hiroshi Tanabe ,  Hidekazu Yamashita

    IPC: F23L7/00

    CPC classification number: C10K3/06 ,  C10L3/08 ,  C21B7/002 ,  C21B2100/64 ,  C21C5/38 ,  F23N2021/10 ,  F27B1/26 ,  F27B1/28 ,  F27D17/00 ,  F27D19/00 ,  F27D21/00 ,  F27D2019/0006 ,  Y02P20/124

    Abstract: Calories of a first mixed gas are predicted by calculations based on the mixed flow rate of a blast furnace gas and the mixed flow rate of a converter gas measured by flow meters, and preset blast furnace gas calories and converter gas calories; the flow rate ratio of the mixed flow rate of a coke oven gas to a gas turbine consumed fuel gas flow rate is calculated based on the predicted calories, set calories, and preset coke oven gas calories; the mixed flow rate required value of the coke oven gas is calculated based on the flow rate ratio and a gas turbine fuel gas requirement signal corresponding to the gas turbine consumed fuel gas flow rate; and the opening of a coke oven gas flow control valve provided in a fuel gas production system is controlled, based on the mixed flow rate required value, to control the mixed flow rate of the coke oven gas.

    Abstract translation: 通过基于高炉煤气的混合流量和通过流量计测量的转化器气体的混合流量以及预设的高炉气体卡路里和转换器气体卡路里的计算来预测第一混合气体的卡路里; 基于预测的卡路里，设定的卡路里和预设的焦炉气体卡路里计算焦炉煤气与燃气轮机的混合流量消耗燃料气体流量的流量比; 基于与燃气轮机消耗的燃料气体流量对应的流量比和燃气轮机燃料气体需求信号计算焦炉煤气的混合流量要求值; 并且基于混合流量要求值控制设置在燃料气体生产系统中的焦炉气体流量控制阀的打开，以控制焦炉气体的混合流量。

    Semiconductor thin film, thin film transistor, method for manufacturing same, and manufacturing equipment of semiconductor thin film
    94.
    发明授权
    Semiconductor thin film, thin film transistor, method for manufacturing same, and manufacturing equipment of semiconductor thin film 有权
    半导体薄膜，薄膜晶体管，其制造方法以及半导体薄膜的制造设备

    公开(公告)号：US07049184B2

    公开(公告)日：2006-05-23

    申请号：US10838368

    申请日：2004-05-05

    Applicant: Hiroshi Tanabe

    Inventor： Hiroshi Tanabe

    IPC: H01L21/84

    CPC classification number: H01L21/02686 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2026 ,  H01L21/268 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/78675

    Abstract: A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film transistor. In the above method, by applying an energy beam partially intercepted by a light-shielding element, melt and re-crystallization occur with a light-shielded region as a starting point. The irradiation of the beam gives energy to the light-shielded region of the silicon thin film so that melt and re-crystallization occur with the light-shielded region as the starting point and so that a local temperature gradient in the light-shielded region is made to be 1200° C./μm or more. In the manufacturing method, a resolution of an optical system used to apply the energy beam is preferably 4 μm or less.

    Abstract translation: 提供一种制造半导体薄膜的方法，其可以形成具有均匀晶体生长方向的晶粒和尺寸大的晶粒以及使用上述方法的制造设备以及制造薄膜晶体管的方法。 在上述方法中，通过施加被遮光元件部分遮挡的能量束，以遮光区域为起点进行熔融再结晶。 光束的照射为硅薄膜的遮光区域提供能量，使得以遮光区域为起始点进行熔融和再结晶，并且使得遮光区域中的局部温度梯度为 制成1200℃/小时以上。 在制造方法中，用于施加能量束的光学系统的分辨率优选为4μm以下。

    Method for forming semiconductor films at desired positions on a substrate
    96.
    发明授权
    Method for forming semiconductor films at desired positions on a substrate 失效
    在基板上的所需位置形成半导体膜的方法

    公开(公告)号：US06989300B1

    公开(公告)日：2006-01-24

    申请号：US09614286

    申请日：2000-07-12

    Applicant: Hiroshi Tanabe

    Inventor： Hiroshi Tanabe

    IPC: H01L21/84 ,  H01L21/20 ,  H01L21/36 ,  C30B13/00 ,  C30B21/04 ,  C30B28/08

    CPC classification number: H01L21/0268 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/2026

    Abstract: A semiconductor film formation method allowing a single-crystal semiconductor film to be formed at a desired position on a substrate with reliability is disclosed. After preparing the substrate having a non-single-crystal semiconductor film formed thereon and an optical mask having a predetermined pattern, a projection area of the optical mask is relatively positioned at the desired position on the substrate. Thereafter, the desired position of the non-single-crystal semiconductor film is irradiated with laser light through the optical mask to change an irradiated portion of the non-single-crystal semiconductor film to the single-crystal semiconductor film. Then, an insulation film is formed on at least the single-crystal semiconductor film.

    Abstract translation: 公开了一种半导体膜形成方法，其可以可靠地在基板上的期望位置形成单晶半导体膜。 在制备其上形成有非单晶半导体膜的基板和具有预定图案的光掩模之后，光掩模的投影面积相对位于基板上的期望位置。 此后，通过光掩模用激光照射非单晶半导体膜的期望位置，将非单晶半导体膜的照射部分改变为单晶半导体膜。 然后，在至少单晶半导体膜上形成绝缘膜。

    Microscope and sample observation method
    97.
    发明申请
    Microscope and sample observation method 有权
    显微镜和样品观察法

    公开(公告)号：US20050190436A1

    公开(公告)日：2005-09-01

    申请号：US10880100

    申请日：2004-06-30

    Applicant: Hirotoshi Terada ,  Ikuo Arata ,  Masaharu Tokiwa ,  Hiroshi Tanabe ,  Shigeru Sakamoto

    Inventor： Hirotoshi Terada ,  Ikuo Arata ,  Masaharu Tokiwa ,  Hiroshi Tanabe ,  Shigeru Sakamoto

    IPC: G02B21/00 ,  G02B21/33

    CPC classification number: G02B21/0016 ,  G02B21/33 ,  Y10S359/90

    Abstract: For a semiconductor device S as an inspected object, there are provided an image acquisition part 1, an optical system 2 including an objective lens 20, and a solid immersion lens (SIL) 3 movable between an insertion position including an optical axis from the semiconductor device S to the objective lens 20 and a standby position off the optical axis. Then observation is carried out in two control modes consisting of a first mode in which the SIL 3 is located at the standby position and in which focusing and aberration correction are carried out based on a refractive index no and a thickness to of a substrate of the semiconductor device S, and a second mode in which the SIL 3 is located at the insertion position and in which focusing and aberration correction are carried out based on the refractive index no and thickness t0 of the substrate, and a refractive index n1, a thickness d1, and a radius of curvature R1 of SIL 3. This provides a microscope and a sample observation method capable of readily performing observation of the sample necessary for an analysis of microstructure or the like of the semiconductor device.

    Abstract translation: 对于作为检查对象的半导体装置S，提供了图像获取部分1，包括物镜20的光学系统2和在包括来自半导体的光轴的插入位置之间可移动的固体浸没透镜（SIL）3 装置S到物镜20和离开光轴的待机位置。 然后在两个控制模式中进行观察，该两种控制模式包括SIL 3位于待机位置的第一模式，并且基于第一模式的基板的折射率no和厚度对其执行聚焦和像差校正 半导体器件S和第二模式，其中SIL 3位于插入位置，并且基于衬底的折射率no和厚度t 0 0进行聚焦和像差校正， 和折射率n 1 1，厚度d 1，以及SIL 3的曲率半径R 1 1。 这提供了能够容易地观察对半导体器件的微细结构等的分析所需的样品的显微镜和样品观察方法。

    Electro-optical display device and image projection unit
    98.
    发明申请
    Electro-optical display device and image projection unit 有权
    电光显示装置和图像投影单元

    公开(公告)号：US20050122447A1

    公开(公告)日：2005-06-09

    申请号：US11001240

    申请日：2004-12-02

    Applicant: Kunihiro Shiota ,  Hiroshi Tanabe

    Inventor： Kunihiro Shiota ,  Hiroshi Tanabe

    IPC: G02F1/13 ,  G02F1/1333 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/336 ,  H01L29/786

    CPC classification number: G02F1/136209 ,  G02F1/133345 ,  G02F2201/40

    Abstract: An LCD device includes a plurality of pixels each having a slope area configured by a plurality of layers. A shielded element shielded by a black matrix has an inner edge located at a distance X apart from the outer edge of the slope area, the distance X being expressed by the formula: x=(T1/cos β)×sin(α−β), wherein α and β are incidence angle and refracted angle, respectively, of the incident light at an interface between the layers having different refractive indexes in the slope area, and T1 is a thickness of the underlying layer forming the interface.

    Abstract translation: LCD装置包括多个像素，每个像素具有由多个层构成的斜面区域。 由黑矩阵屏蔽的屏蔽元件具有位于与斜面区域的外边缘相距X距离的内边缘，距离X由下式表示：x =（T1 /cosβ）xsin（α-β） 其中α和β分别是在倾斜区域中具有不同折射率的层之间的界面处的入射光的入射角和折射角，T1是形成界面的下层的厚度。

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