摘要:
A GaAsP-base light emitting element capable of sustaining an excellent light emission property for a long period, and a method for manufacturing thereof are provided. The light emitting element 1 has a p-n junction interface responsible for light emission formed between a p-type GaAs1-aPa layer 9 and an n-type GaAs1-aPa layer 8, and has a nitrogen-doped zone 8c formed in a portion including the p-n junction interface between such p-type GaAs1-aPa layer 9 and n-type GaAs1-aPa layer 8. Such element can be manufactured by fabricating a plurality of light emitting elements by varying nitrogen concentration Y of the nitrogen-doped zone 8c while keeping a mixed crystal ratio a of the p-type GaAs1- aPa layer 9 and n-type GaAs1-aPa layer 8 constant; finding an emission luminance/nitrogen concentration relationship by measuring emission luminance of the individual light emitting elements; and adjusting the nitrogen concentration of the nitrogen-doped zone 8c so as to fall within a range from 1.05Yp to 1.5Yp, where Yp is defined as a peak nitrogen concentration whereat the emission luminance of the light emitting element will become maximum at a mixed crystal ratio a.
摘要:
A device carrier capable of reliably measuring electric characteristics of the device with accuracy and an auto-handle are provided. The device carrier holds an IC having terminals on a lower face thereof at multiple positions, and allows the terminals to be brought into contact with contacts provided on an IC socket, wherein the device carrier comprises an opening through which the device can pass, a support part disposed on the opening for supporting the lower face of the IC, and a hinge part for turnably supporting the support part, wherein said supporter part is turned to release the support of the device when the socket approaches thereto. The supporter part engages with the release pins as the device carrier approaches to the IC socket to be turned so as to release the support of the lower face of the IC. The IC which has been released from being supported by the supporter part passes through the opening and is placed on the IC socket.
摘要:
A semiconductor pullet 1 includes an integrated circuit formed in the central area of the pellet 1, first electric pads 2 arranged in a line in the peripheral area and second electric pads 3 connected to the conductive lines 4 each of which has a second width L. The first pad 2 has a first width S1 and arranged with a first interval P. The second pads 3 have a third width S2 and are located outside of the first pads 2 in a parallel line to the line of said first pads with a second interval C. The first, second and third widths S1, L, S2 and the first interval P has the relationship P>S2>S1+L. Each of the second pads 3 are located at the positions corresponding to the middle positions between the first pads 2 adjoining each other where the second pads 3 are located in a first area (region A) which is inside of straight lines from a center of the semiconductor pellet having an angle &thgr; with a side of the semiconductor pellet 1, in which &thgr;>tan−1(2C/(P−S1)). Further, each of the second pads 3 are located at the positions shifting in a direction towards a corner of the semiconductor pellet 1 from the middle positions where the second pads 3 are located in a second area (region B) which is outside of the first area (region A).
摘要:
An apparatus and method for decoding data encoded in a linear cyclic code with less hardware than the prior art decoding apparatus without sacrificing the processing speed are described. The polynomial arithmetic part 14 derives polynomials &sgr;(x), &ohgr;(x) by repeating calculation of the following Qi(x), exchange of polynomials between the register U_reg 180 and the register X_reg 184, and exchange of polynomials between the register Y_reg 182 and the register Z_reg 186 until the degree (deg Xreg) of the polynomial in the register X_reg 184 becomes smaller than [(d−h+1)/2] to solve the following recursive formula. [recursive formula]=&sgr;i(x)=&sgr;i−2(x)+Qi(x)·&sgr;i−1(x) &ohgr;i(x)=&ohgr;i−2(x)+Qi(x)·&ohgr;i−1(x) where Qi(x) is a quotient of &ohgr;i−2(x)/&ohgr;i−1(x) &sgr;−1(x)=1, &ohgr;−1(x)=x2t &sgr;0(x)=1, &ohgr;0(x)=M(x)
摘要:
A aqueous ink for a ball-point pen which is stable over time and has high pigment dispersion stability, includes a pigment, a water-soluble organic solvent, water, xanthane gum of about 0.01 to about 0.2 wt. % and a sodium alginate of about 0.2 to about 0.6 wt. % of a total amount of the ink.
摘要:
Disclosed is an electronic substrate processing system comprising a processing equipment for processing electronic substrates including semiconductor wafers and liquid crystal substrates; a cleaning equipment for cleaning said electronic substrate in a predetermined processing step; a portable closed container for accommodating a cassette containing said electronic substrate; a purging station for gas-purging said portable closed containers; and a storage member for storing said portable closed containers, wherein said cassette accommodates said electronic substrates which have been cleaned by said cleaning equipment being set in said portable closed container and purged with an inert gas in said purging station, and said portable closed container or containers is stored in said storing section when necessary.
摘要:
Plants of different genera or species are crossed after either pollen, anther or pistil is irradiated with an ion beam of a proton or an element up to uranium which have a LET of 5-10,000 keV/.mu.m and are applied in a dose range of 1-2,000 Gy.
摘要:
An epitaxial layer(s) of compound semiconductor alloy doped with nitrogen and represented by the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0
摘要:
A liquid-phase growth process of a compound semiconductor which is capable of effectively controlling the generation of a surface defect and improve the product quality and production yield is disclosed in which before the start of liquid-phase growth, a substrate and a solution are held in a 100% hydrogen atmosphere or a mixed gas atmosphere consisting of more than 80% of hydrogen and the rest of an inert gas, and immediately before the start of the liquid-phase growth, the atmosphere is changed to a mixed gas atmosphere consisting of not more than 60% of hydrogen and the rest of the inert gas.
摘要:
A mold-cleaning composition and sheet comprising an uncured rubber composition comprising an uncured rubber and a curing agent, and at least one removal aid selected from imidazoles and imidazolines, and a method for cleaning a mold using the mold-cleaning sheet, are disclosed. The mold-cleaining sheet is suitably used to clean molding surfaces of a mold or to remove contaminants such as burr formed at peripheries thereof in the continuous production of semiconductor devices by transfer molding.