公开(公告)号：US10886172B2

公开(公告)日：2021-01-05

申请号：US16848754

申请日：2020-04-14

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Kelvin Chan

IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/02 ,  H01L27/11582 ,  H01L27/11556 ,  H01L21/285 ,  H01L23/532 ,  H01L21/311 ,  H01L23/528

Abstract: Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.

公开(公告)号：US10854461B2

公开(公告)日：2020-12-01

申请号：US16588235

申请日：2019-09-30

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Yong Wu ,  Chia Cheng Chin ,  Srinivas Gandikota ,  Kelvin Chan

IPC: H01L21/285 ,  H01L21/02 ,  H01L21/768 ,  H01L21/3205

Abstract: Methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer.

公开(公告)号：US20200340858A1

公开(公告)日：2020-10-29

申请号：US16828609

申请日：2020-03-24

Applicant: Applied Materials, Inc.

Inventor： Philip Allan Kraus ,  Kelvin Chan ,  Travis Koh ,  Blake Erickson ,  Upendra Ummethala

IPC: G01J3/18 ,  G02B6/42 ,  G01J3/02

Abstract: Embodiments disclosed herein include an optical sensor system. In an embodiment, the optical sensor system comprises a processing chamber and a sensor. In an embodiment, the sensor comprises a first diffraction grating oriented in a first direction, a second diffraction grating oriented in a second direction, and a detector for detecting electromagnetic radiation diffracted from the first grating and the second grating. In an embodiment, the optical sensor system further comprises an optical coupling element, where the optical coupling element optically couples an interior of the processing chamber to the sensor.

公开(公告)号：US20190385849A1

公开(公告)日：2019-12-19

申请号：US16522226

申请日：2019-07-25

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan ,  Yihong Chen ,  Kelvin Chan ,  Srinivas Gandikota

IPC: H01L21/033 ,  C23F1/00 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/321

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US20190333810A1

公开(公告)日：2019-10-31

申请号：US16505699

申请日：2019-07-08

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Kelvin Chan

IPC: H01L21/768 ,  H01L27/11582 ,  H01L27/11556 ,  H01L21/02 ,  H01L23/528 ,  H01L21/3213 ,  H01L21/285 ,  H01L23/532 ,  H01L21/311

Abstract: Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.

公开(公告)号：US20190333760A1

公开(公告)日：2019-10-31

申请号：US16374345

申请日：2019-04-03

Applicant: Applied Materials, Inc

Inventor： Lakmal Charidu Kalutarage ,  Mark Saly ,  David Thompson ,  William John Durand ,  Kelvin Chan ,  Hanhong Chen ,  Philip Allan Kraus

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/513

Abstract: Embodiments include a method for forming a carbon containing film. In an embodiment, the method comprises flowing a precursor gas into a processing chamber. For example the precursor gas comprises carbon containing molecules. In an embodiment, the method further comprises flowing a co-reactant gas into the processing chamber. In an embodiment, the method further comprises striking a plasma in the processing chamber. In an embodiment plasma activated co-reactant molecules initiate polymerization of the carbon containing molecules in the precursor gas. Embodiments may also include a method that further comprises depositing a carbon containing film onto a substrate in the processing chamber.

公开(公告)号：US10319624B2

公开(公告)日：2019-06-11

申请号：US15621120

申请日：2017-06-13

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Yihong Chen ,  Kelvin Chan ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Pramit Manna

IPC: H01L21/762 ,  H01L21/28 ,  H01L21/32 ,  H01L21/8234 ,  H01L29/43

Abstract: Methods comprising forming a film on at least one feature of a substrate surface are described. The film is expanded to fill the at least one feature and cause growth of the film from the at least one feature. Methods of forming self-aligned vias are also described.

公开(公告)号：US20180350671A1

公开(公告)日：2018-12-06

申请号：US15986189

申请日：2018-05-22

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Kelvin Chan

IPC: H01L21/768 ,  H01L21/311 ,  H01L23/532 ,  H01L21/02 ,  H01L23/528 ,  H01L27/11556 ,  H01L27/11582 ,  H01L21/285

CPC classification number: H01L21/76877 ,  H01L21/02175 ,  H01L21/02244 ,  H01L21/28568 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/76843 ,  H01L21/76888 ,  H01L23/528 ,  H01L23/53266 ,  H01L27/11556 ,  H01L27/11582

Abstract: Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.

公开(公告)号：US20170306490A1

公开(公告)日：2017-10-26

申请号：US15494892

申请日：2017-04-24

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yihong Chen ,  Jared Ahmad Lee ,  Kevin Griffin ,  Srinivas Gandikota ,  Joseph Yudovsky ,  Mandyam Sriram

IPC: C23C16/455 ,  C23C16/50

CPC classification number: C23C16/45527 ,  C23C16/08 ,  C23C16/45551 ,  C23C16/50

Abstract: Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.

公开(公告)号：US20170179036A1

公开(公告)日：2017-06-22

申请号：US15381752

申请日：2016-12-16

Applicant: Applied Materials, Inc.

Inventor： Yihong Chen ,  Kelvin Chan ,  Srinivas Gandikota

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/285

CPC classification number: H01L23/53266 ,  H01L21/28525 ,  H01L21/28556 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76876 ,  H01L31/18

Abstract: Methods for depositing a metal film comprising forming an amorphous silicon layer as a nucleation layer and/or glue layer on a substrate. Some embodiments further comprise the incorporation of a glue layer to increase the ability of the amorphous silicon layer and metal layer to stick to the substrate.