摘要:
A method and apparatus for measurement of a characteristic of a substrate. A target is present on the substrate and a measurement is performed during a scanning movement of the substrate. The scanning movement of the substrate is a linear movement and the measurement includes obtaining a reflected image of the target using a pulsed light source, the duration of a single light pulse being less than 100 psec. A lithographic apparatus includes such a measurement apparatus, and a device manufacturing method includes such a measurement method.
摘要:
In a method of measuring asymmetry in a scatterometer, a target portion is illuminated twice, first with 0° of substrate rotation and secondly with 180° of substrate rotation. One of those images is rotated and then that rotated image is subtracted from the other image. In this way, asymmetry of the scatterometer can be corrected.
摘要:
In a scatterometry apparatus having an illumination aperture stop, a field stop is provided at an intermediate image to control the spot size on the substrate. The field stop may be apodized, e.g. having a transmissivity in the form of a trapezium or a Gaussian shape.
摘要:
In an angularly resolved scatterometer, an aperture plate including at least one obscuration extending into the image of the pupil plane is provided. Defocus values of a target pattern are determined from the radial distance between the innermost point of the images of the obscurations and the nominal center if the pupil image. Defocus errors are compensated for by capturing a plurality of normalization images using a reference plate at a plurality of different defocus positions and subtracting a suitable normalization from the measurement spectrum of a target pattern.
摘要:
An alignment system uses a self-referencing interferometer that produces two overlapping and relatively rotated images of an alignment marker. Detectors detect intensities in a pupil plane where Fourier transforms of the images are caused to interfere. The positional information is derived from the phase difference between diffraction orders of the two images which manifests as intensity variations in the interfered orders. Asymmetry can also be measured by measuring intensities at two positions either side of a diffraction order.
摘要:
In a device manufacturing method and a metrology apparatus, metrology measurements are executed using radiation having a first wavelength. Subsequently a grid of conducting material is applied on the substrate, the grid having grid openings which in a first direction in the plane of the grid are smaller than the first wavelength. The space in the scribe lane where the measurement target was, is now shielded and may be used again in further layers or processing steps of the substrate.
摘要:
A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate includes two reference gratings provided in the substrate and two measurement gratings on top of the reference gratings, the measurement gratings being similar to the reference gratings, and oppositely biased in a single direction relative to the respective reference gratings. An overlay measurement device with an image sensor is used for obtaining pixel data of a measurement spot in each of the two measurement gratings. Asymmetry for each pixel in the measurement spot is measured, and from the pixel asymmetry measurements in associated pixels of each of the two measurement gratings an overlay value and a process dependent value is determined, as well as a quality indicator for the overlay value and the process dependent value.
摘要:
An inspection system is arranged to measure an overlay error by projecting a plurality of radiation beams, differing in wavelength and/or polarization, onto two targets. A first radiation beam is projected onto a first target and the reflected radiation A1+ is detected. The first target comprises two gratings having a bias +d with respect to each other. The first radiation beam is also projected on to a second target, which comprises two gratings having a bias −d with respect to each other, and the reflected radiation A1− is detected. A second radiation beam, having a different wavelength and/or polarization from the first radiation beam, is projected onto the first target and reflected radiation A2+ is detected and projected onto the second target and reflected radiation A2− is detected. Detected radiations A1+, A1−, A2+, and A2− is used to determine the overlay error.
摘要:
A method of determining a position of an imprint template in an imprint lithography apparatus. In an embodiment, the method includes illuminating an area of the imprint template in which an alignment mark is expected to be found by scanning an alignment radiation beam over that area, detecting an intensity of radiation reflected or transmitted from the area, and identifying the alignment mark via analysis of the detected intensity.
摘要:
Disclosed is a method of measuring a position of at least one substantially reflective layer surface on a substrate in a lithographic apparatus, and associated level sensor and lithographic apparatuses. The method comprises performing at least two interferometrical measurements using a broadband light source. Between each measurement, the component wavelengths and/or intensity levels over the component wavelengths of the broadband source beam is varied such that, where it is only the intensity levels that are varied, the intensity variation is different for at least some of the beam's component wavelengths. Alternatively, a single measurement and subsequent processing of the measurement to obtain measurement data whereby the component wavelengths and/or intensity levels over the component wavelengths are different can be applied as well to obtain the position.