公开(公告)号：US20110244625A1

公开(公告)日：2011-10-06

申请号：US12754712

申请日：2010-04-06

申请人： Benjamin Riordon ,  Russell Low ,  Atul Gupta ,  William Weaver

发明人： Benjamin Riordon ,  Russell Low ,  Atul Gupta ,  William Weaver

IPC分类号： H01L31/18

CPC分类号： H01L31/022425 ,  H01L21/266 ,  H01L31/022433 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： An improved, lower cost method of processing substrates, such as to create solar cells, is disclosed. The doped regions are created on the substrate, using a mask or without the use of lithography or masks. After the implantation is complete, visual recognition is used to determine the exact region that was implanted. This information can then be used by subsequent process steps to crate a suitable metallization layer and provide alignment information. These techniques can also be used in other ion implanter applications. In another aspect, a dot pattern selective emitter is created and imaging is used to determine the appropriate metallization layer.

摘要翻译： 公开了一种改进的，低成本的处理衬底的方法，例如制造太阳能电池。 使用掩模或不使用光刻或掩模在衬底上产生掺杂区域。 植入完成后，使用视觉识别来确定植入的确切区域。 然后可以通过随后的工艺步骤来使用该信息来对合适的金属化层进行包装并提供对准信息。 这些技术也可用于其他离子注入机应用。 在另一方面，产生点图案选择性发射体，并且使用成像来确定合适的金属化层。

公开(公告)号：US08008176B2

公开(公告)日：2011-08-30

申请号：US12853698

申请日：2010-08-10

申请人： Nicholas P. T. Bateman ,  Steven M. Anella ,  Benjamin B. Riordon ,  Atul Gupta

发明人： Nicholas P. T. Bateman ,  Steven M. Anella ,  Benjamin B. Riordon ,  Atul Gupta

IPC分类号： H01L21/425

CPC分类号： H01J37/3171 ,  H01J37/20 ,  H01J2237/20228 ,  H01J2237/31711 ,  H01L21/266 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： An improved method of producing solar cells utilizes a mask which is fixed relative to an ion beam in an ion implanter. The ion beam is directed through a plurality of apertures in the mask toward a substrate. The substrate is moved at different speeds such that the substrate is exposed to an ion dose rate when the substrate is moved at a first scan rate and to a second ion dose rate when the substrate is moved at a second scan rate. By modifying the scan rate, various dose rates may be implanted on the substrate at corresponding substrate locations. This allows ion implantation to be used to provide precise doping profiles advantageous for manufacturing solar cells.

摘要翻译： 制造太阳能电池的改进方法利用在离子注入机中相对于离子束固定的掩模。 离子束被引导通过掩模中的多个孔朝向衬底。 衬底以不同的速度移动，使得当衬底以第一扫描速率移动时衬底暴露于离子剂量率，而当衬底以第二扫描速率移动时，衬底暴露于离子剂量率。 通过修改扫描速率，可以在相应的衬底位置的衬底上植入各种剂量率。 这允许离子注入用于提供有利于制造太阳能电池的精确掺杂分布。

公开(公告)号：US07888249B2

公开(公告)日：2011-02-15

申请号：US12760227

申请日：2010-04-14

申请人： Nicholas P. T. Bateman ,  Atul Gupta ,  Paul Sullivan ,  Paul J. Murphy

发明人： Nicholas P. T. Bateman ,  Atul Gupta ,  Paul Sullivan ,  Paul J. Murphy

IPC分类号： H01L21/425

CPC分类号： H01L31/18 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/0827 ,  H01J2237/202 ,  H01J2237/31711 ,  H01L21/26513 ,  H01L21/266 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The manufacture of solar cells is simplified and cost reduced through by performing successive ion implants, without an intervening thermal cycle. In addition to reducing process time, the use of chained ion implantations may also improve the performance of the solar cell. In another embodiment, two different species are successively implanted without breaking vacuum. In another embodiment, the substrate is implanted, then flipped such that it can be and implanted on both sides before being annealed. In yet another embodiment, one or more different masks are applied and successive implantations are performed without breaking the vacuum condition, thereby reducing the process time.

摘要翻译： 太阳能电池的制造通过执行连续的离子注入而没有中间热循环而简化并降低成本。 除了缩短处理时间之外，使用链式离子注入也可以提高太阳能电池的性能。 在另一个实施方案中，连续地植入两种不同的物质而不破坏真空。 在另一个实施例中，植入衬底，然后翻转，使得其可以在退火之前两面植入。 在另一个实施例中，施加一个或多个不同的掩模，并且在不破坏真空条件的情况下执行连续的注入，由此减少处理时间。

公开(公告)号：US07655931B2

公开(公告)日：2010-02-02

申请号：US11693308

申请日：2007-03-29

申请人： Atul Gupta

发明人： Atul Gupta

IPC分类号： G21K5/10 ,  H05B31/26 ,  H01J27/26 ,  H01J37/317

CPC分类号： H01J37/08 ,  H01J37/3171 ,  H01J2237/022

摘要： Techniques improving the performance and extending the lifetime of an ion source with gas mixing are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for improving performance and extending lifetime of an ion source in an ion implanter. The method may comprise introducing a predetermined amount of dopant gas into an ion source chamber. The dopant gas may comprise a dopant species. The method may also comprise introducing a predetermined amount of diluent gas into the ion source chamber. The diluent gas may dilute the dopant gas to improve the performance and extend the lifetime of the ion source. The diluent gas may further comprise a co-species that is the same as the dopant species.

摘要翻译： 公开了通过气体混合改善离子源的性能和延长寿命的技术。 在一个特定的示例性实施例中，可以将技术实现为用于改进离子注入机中的离子源的性能和延长寿命的方法。 该方法可以包括将预定量的掺杂剂气体引入到离子源室中。 掺杂剂气体可以包括掺杂剂物质。 该方法还可以包括将预定量的稀释气体引入离子源室。 稀释气体可以稀释掺杂气体以改善性能并延长离子源的寿命。 稀释气体还可以包含与掺杂剂物质相同的共同物质。

公开(公告)号：US07542979B2

公开(公告)日：2009-06-02

申请号：US10956665

申请日：2004-10-01

申请人： Atul Gupta ,  Amar Singh

发明人： Atul Gupta ,  Amar Singh

IPC分类号： G06F17/00

CPC分类号： G06F17/30315 ,  Y10S707/99942

摘要： The present invention includes an apparatus, method and system for loading data into a database. The invention includes a spreadsheet dataset, having data in the form of one or more records, a control file containing a set of rules, each rule having a condition and a spreadsheet loader. The spreadsheet dataset and the control file are inputs to the spreadsheet loader. Each rule in the control file is evaluated for each record to determine if the condition is true for the record, and the records are parsed if the condition is true. The spreadsheet loader sends the parsed data to the database. The invention includes a user interface to facilitate creation of the control file.

摘要翻译： 本发明包括用于将数据加载到数据库中的装置，方法和系统。 本发明包括具有一个或多个记录形式的数据的电子数据表数据集，包含一组规则的控制文件，每个规则具有条件和电子表格加载器。 电子数据表数据集和控制文件是电子表格加载程序的输入。 为每个记录评估控制文件中的每个规则，以确定该条件是否为该记录，如果条件为真，记录将被解析。 电子表格加载器将解析的数据发送到数据库。 本发明包括用于简化控制文件的创建的用户界面。

公开(公告)号：US20090104719A1

公开(公告)日：2009-04-23

申请号：US11877312

申请日：2007-10-23

申请人： Atul Gupta ,  Timothy Miller ,  Harold M. Persing ,  Daniel Distaso ,  Vikram Singh

发明人： Atul Gupta ,  Timothy Miller ,  Harold M. Persing ,  Daniel Distaso ,  Vikram Singh

IPC分类号： H01L21/66

CPC分类号： H01L22/20 ,  H01L22/12

摘要： A method of in-situ monitoring of a plasma doping process includes generating a plasma comprising dopant ions in a chamber proximate to a platen supporting a substrate. A platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A dose of ions attracted to the substrate is measured. At least one sensor measurement is performed to determine the condition of the plasma chamber. In addition, at least one plasma process parameter is modified in response to the measured dose and in response to the at least one sensor measurement.

摘要翻译： 等离子体掺杂过程的原位监测方法包括在靠近支撑衬底的压板的腔室中产生包含掺杂剂离子的等离子体。 压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。 测量吸附到基底的一定剂量的离子。 执行至少一个传感器测量以确定等离子体室的状态。 此外，至少一个等离子体处理参数响应于测量的剂量并且响应于至少一个传感器测量而被修改。

公开(公告)号：US20080245957A1

公开(公告)日：2008-10-09

申请号：US11695747

申请日：2007-04-03

申请人： Atul Gupta ,  Jay Scheuer ,  Daniel Distaso ,  Antonella Cucchetti ,  William G. Callahan

发明人： Atul Gupta ,  Jay Scheuer ,  Daniel Distaso ,  Antonella Cucchetti ,  William G. Callahan

IPC分类号： G21K5/00 ,  G01D18/00

CPC分类号： H01J37/3171 ,  H01J37/3023 ,  H01J37/304 ,  H01J2237/30433

摘要： An approach that tunes an ion implanter for optimal performance is described. In one embodiment, there is a system for tuning an ion implanter having multiple beamline elements to generate an ion beam having desired beam properties. In this embodiment, the system comprises a beamline element settings controller configured to provide beamline element settings for generating the desired beam properties. A tuning model correlates the beamline element settings with beam properties. A calibration component is configured to calibrate the tuning model in response to a determination that beam properties measured from using the tuned beamline element settings differs from the determined tuned beamline element settings.

摘要翻译： 描述了调整离子注入机以获得最佳性能的方法。 在一个实施例中，存在用于调整具有多个束线元件的离子注入机的系统，以产生具有所需波束特性的离子束。 在该实施例中，系统包括被配置为提供用于产生所需光束特性的波束线元件设置的波束线元件设置控制器。 调谐模型将光束元素设置与光束属性相关联。 校准组件被配置为响应于从使用调谐的波束线元件设置测量的波束特性与所确定的调谐波束线元件设置不同的确定校准调谐模型。

公开(公告)号：US20060208204A1

公开(公告)日：2006-09-21

申请号：US11146072

申请日：2005-06-07

申请人： Atul Gupta ,  Joseph Olson

发明人： Atul Gupta ,  Joseph Olson

IPC分类号： H01J37/302 ,  H01J37/317

CPC分类号： H01J37/3171 ,  H01J2237/2487 ,  H01J2237/30411 ,  H01J2237/30483 ,  H01J2237/31703 ,  H01J2237/31706 ,  H01L21/26586 ,  H01L29/66803

摘要： A technique for ion beam angle spread control for advance applications is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control for advanced applications. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles. The method may also comprise varying an ion beam dose associated with at least one of the one or more ion beams based at least in part on the two or more incident angles, thereby exposing the substrate surface to a controlled ion beam angle-dose distribution.

摘要翻译： 公开了一种用于先进应用的离子束角度扩展控制技术。 在一个特定的示例性实施例中，该技术可以被实现为用于高级应用的离子束角度扩展控制的方法。 该方法可以包括在两个或更多个不同的入射角处在衬底表面处引导一个或多个离子束。 该方法还可以包括至少部分地基于两个或多个入射角度改变与至少一个离子束相关联的离子束剂量，从而将基底表面暴露于受控的离子束角度 - 剂量分布。

公开(公告)号：US20050287307A1

公开(公告)日：2005-12-29

申请号：US10874944

申请日：2004-06-23

申请人： Vikram Singh ,  Harold Persing ,  Timothy Miller ,  Atul Gupta ,  Ziwei Fang

发明人： Vikram Singh ,  Harold Persing ,  Timothy Miller ,  Atul Gupta ,  Ziwei Fang

IPC分类号： C03C15/00 ,  C23C14/00 ,  H01L21/223

CPC分类号： H01L21/2236 ,  H01J37/32412

摘要： A method for ion implantation of a substrate includes forming a plasma from at least one implant material comprising at least one implant species, implanting the at least one implant species into a surface of the substrate, and directing at least one surface-modifying species at the surface to reduce a surface damage associated with the plasma. An apparatus for ion implantation is configured to implement this method.

摘要翻译： 用于离子植入衬底的方法包括从至少一种植入材料形成等离子体，所述至少一种植入材料包括至少一种植入物种，将所述至少一种植入物种植入所述基质的表面，以及将所述至少一种表面改性物质 表面以减少与等离子体相关的表面损伤。 用于离子注入的装置被配置为实现该方法。

公开(公告)号：US20050254566A1

公开(公告)日：2005-11-17

申请号：US11187266

申请日：2005-07-22

申请人： Apu Sivadas ,  Atul Gupta ,  Kenneth Lazaris-Brunner ,  Vasilis Papanikolaou ,  Rajiv Shukla ,  Bharat Tailor

发明人： Apu Sivadas ,  Atul Gupta ,  Kenneth Lazaris-Brunner ,  Vasilis Papanikolaou ,  Rajiv Shukla ,  Bharat Tailor

IPC分类号： H04L25/03 ,  H03H7/30 ,  H03H21/00 ,  H04B3/04 ,  H04L25/00 ,  H04L27/08

CPC分类号： H04L25/03885

摘要： Transmit amplitude independent adaptive equalizers are provided that compensate for transmission losses in an input signal when the transmit signal amplitude is unknown. Several embodiments are provided, including a first embodiment having an equalizer core, a controllable-swing slicer and an amplitude control loop, a second embodiment having an equalizer core, a fixed-swing slicer and a control loop, a third embodiment having an equalizer core, a variable gain amplifier, and a variable gain amplifier control loop, and a fourth embodiment having an equalizer core, a fixed-swing slicer, a variable gain amplifier, and a variable gain amplifier control loop.