公开(公告)号：US20120242229A1

公开(公告)日：2012-09-27

申请号：US13425159

申请日：2012-03-20

申请人： Daniel J. Hoffman ,  Daniel Carter ,  Randy Grilley ,  Karen Peterson

发明人： Daniel J. Hoffman ,  Daniel Carter ,  Randy Grilley ,  Karen Peterson

IPC分类号： H05H1/46

CPC分类号： H05H1/46 ,  H05H2001/4652

摘要： Disclosed herein are systems, methods and apparatuses for dissociating a non-activated gas through a disc-shaped plasma in a remote plasma source. Two inductive elements, one on either side of the disc-shaped plasma, generate a magnetic field that induces electric fields that sustain the disc-shaped plasma. The inductive elements can be coiled conductors having any number of loops and can be arranged in planar or vertical coils or a combination of planar and vertical coils. Additionally, the ratio of inductive element radius to gap distance between the two inductive elements can be configured to achieve a desired vertical plasma confinement.

摘要翻译： 本文公开了用于通过远程等离子体源中的盘形等离子体解离非活化气体的系统，方法和装置。 两个感应元件，一个在盘形等离子体的两侧，产生一个磁场，其诱导维持盘形等离子体的电场。 电感元件可以是具有任何数量的环的线圈导体，并且可以布置在平面或垂直线圈中或平面和垂直线圈的组合。 此外，电感元件半径与两个感应元件之间的间隙距离的比可以被配置成实现期望的垂直等离子体约束。

公开(公告)号：US07910013B2

公开(公告)日：2011-03-22

申请号：US11608980

申请日：2006-12-11

申请人： Daniel J. Hoffman ,  Ezra Robert Gold

发明人： Daniel J. Hoffman ,  Ezra Robert Gold

IPC分类号： G01L21/30 ,  H01L21/66

CPC分类号： H01J37/32174 ,  H01J37/32935

摘要： For each one of plural plasma parameters, such as ion density, wafer voltage, etch rate, wafer current, a relevant surface of constant value is fetched from a memory. The relevant surface of constant value corresponds to a user-selected value of one of the plasma parameters, the surface being defined in a space of which each one of plural, chamber parameters (e.g., source power, bias power and chamber pressure) is a dimension. An intersection of these relevant surfaces is found, the intersection corresponding to a target value of source power, bias power and chamber pressure. The source power, the bias power and the chamber pressure, respectively, are set to their corresponding target values.

摘要翻译： 对于诸如离子密度，晶片电压，蚀刻速率，晶片电流的多个等离子体参数中的每一个，从存储器取出恒定值的相关表面。 恒定值的相关表面对应于等离子体参数之一的用户选择的值，表面被定义在其中多个室参数（例如，源功率，偏置功率和室压力）中的每一个为 尺寸。 找到这些相关表面的交点，该交点对应于源功率，偏置功率和室压力的目标值。 源功率，偏置功率和室压力分别设置为其相应的目标值。

公开(公告)号：US20100314244A1

公开(公告)日：2010-12-16

申请号：US12560798

申请日：2009-09-16

申请人： Karl Brown ,  Alan Ritchie ,  John A. Pipitone ,  Daniel J. Hoffman ,  Ying Rui ,  Donald J.K. Olgado

发明人： Karl Brown ,  Alan Ritchie ,  John A. Pipitone ,  Daniel J. Hoffman ,  Ying Rui ,  Donald J.K. Olgado

IPC分类号： C23C14/46

CPC分类号： C23C14/354 ,  C23C14/3471 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32449

摘要： Methods of processing a substrate in a PVD chamber comprising a target, a substrate and a process gas at a pressure sufficient to cause ionization of a substantial portion of species sputtered from the target are described. A capacitively coupled high density plasma is maintained by applying very high frequency power to the target. Sputtered material is ionized in the plasma and accelerated toward the substrate by a high frequency bias power applied to the substrate. The microstructure of the resultant film is controlled by modifying one or more of the pressure and the high frequency bias power.

公开(公告)号：US07695983B2

公开(公告)日：2010-04-13

申请号：US11360635

申请日：2006-02-22

申请人： Daniel J. Hoffman

发明人： Daniel J. Hoffman

IPC分类号： C23F1/00 ,  C23C16/00 ,  H01L21/00 ,  G01L21/30

CPC分类号： H01J37/32082 ,  H01J37/32165 ,  H01J37/3266 ,  H01L21/67069

摘要： A method of processing a workpiece in a plasma reactor includes coupling RF power from at least three RF power source of three respective frequencies to plasma in the reactor, setting ion energy distribution shape by selecting a ratio between the power levels of a first pair of the at least three RF power sources, and setting ion dissociation and ion density by selecting a ratio between the power levels of a remaining one of the three RF power sources and an applied magnetic field. The three respective frequencies can be an LF frequency, an HF frequency and a VHF frequency, wherein the first pair corresponds to the LF and HF frequencies and the second pair corresponds to the HF and VHF frequencies.

摘要翻译： 在等离子体反应器中处理工件的方法包括将来自三个相应频率的至少三个RF功率源的RF功率耦合到反应器中的等离子体，通过选择第一对的功率级之间的比率来设定离子能量分布形状 至少三个RF功率源，并且通过选择三个RF功率源中的剩余的一个功率电平和所施加的磁场的功率电平之间的比率来设定离子解离和离子密度。 三个相应频率可以是LF频率，HF频率和VHF频率，其中第一对对应于LF和HF频率，并且第二对对应于HF和VHF频率。

公开(公告)号：US20100012480A1

公开(公告)日：2010-01-21

申请号：US12173228

申请日：2008-07-15

申请人： John C. Forster ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianming Tang ,  Rongjun Wang

发明人： John C. Forster ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianming Tang ,  Rongjun Wang

IPC分类号： C23C14/46

CPC分类号： H01J37/34 ,  H01J37/32165 ,  H01J37/3444

摘要： The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency fs through a bias multi-frequency impedance controller relative to the impedance to ground at the source power frequency fs through the side wall; or (b) decreasing ion density over the workpiece center while increasing ion density over the workpiece edge by increasing the impedance to ground at fs through the bias multi-frequency impedance controller relative to the impedance to ground at fs through the side wall.

摘要翻译： 在工件上进行物理气相沉积的方法包括执行以下至少一个：（a）在工件中心上增加离子密度，同时通过减小目标源功率频率fs至 一个偏置多频阻抗控制器，相对于通过侧壁的源电源频率fs对地的阻抗; 或（b）通过在fs通过偏压多频阻抗控制器相对于通过侧壁的fs处的接地阻抗增加对fs的接地阻抗来增加工件边缘上的离子密度，从而降低工件中心的离子密度。

公开(公告)号：US20100012029A1

公开(公告)日：2010-01-21

申请号：US12173198

申请日：2008-07-15

申请人： John C. FORSTER ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianmin Tang ,  Rongjun Wang

发明人： John C. FORSTER ,  Daniel J. Hoffman ,  John A. Pipitone ,  Xianmin Tang ,  Rongjun Wang

IPC分类号： B05C11/00

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/34 ,  H01J37/3444

摘要： In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked.

摘要翻译： 在物理气相沉积等离子体反应器中，多频阻抗控制器耦合在RF地与（a）偏置电极之一之间，（b）溅射靶，控制器在第一组频率处提供可调阻抗，所述第一 包括要阻止的第一组频率和要被接纳的第一组频率的频率集合。 第一多频阻抗控制器包括并联连接并被调谐到要被允许的所述第一组频率的一组带通滤波器，以及串联连接并被调谐到要被阻挡的所述第一组频率的一组陷波滤波器。

公开(公告)号：US20090294062A1

公开(公告)日：2009-12-03

申请号：US12128963

申请日：2008-05-29

申请人： Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

发明人： Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

IPC分类号： C23C16/505 ,  C23F1/02

CPC分类号： H01J37/32935 ,  H01J37/32091 ,  H01J37/32183

摘要： In a plasma reactor employing source and bias RF power generators, plasma is stabilized against an engineered transient in the output of either the source or bias power generator by a compensating modulation in the other generator.

摘要翻译： 在采用源和偏压射频功率发生器的等离子体反应器中，等离子体通过在另一发生器中的补偿调制而在源极或偏置功率发生器的输出中的设计瞬态稳定。

公开(公告)号：US20090229969A1

公开(公告)日：2009-09-17

申请号：US12077067

申请日：2008-03-14

申请人： Daniel J. Hoffman ,  Karl M. Brown ,  Ying Rui ,  John Pipitone

发明人： Daniel J. Hoffman ,  Karl M. Brown ,  Ying Rui ,  John Pipitone

IPC分类号： C23C14/34

CPC分类号： C23C14/35 ,  C23C14/3471 ,  C23C14/50 ,  C23C14/542 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32577 ,  H01J37/3266 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/34 ,  H01J37/3444

摘要： In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

摘要翻译： 在等离子体中将材料物理气相沉积到工件上时，金属靶在工件间距小于工件直径的工件间距对象。 将载气引入室中，并且室中的气体压力保持在平均自由程小于间隙的5％的阈值压力以上。 来自VHF发生器的RF等离子体源功率被施加到目标以在目标处产生电容耦合等离子体，VHF发生器具有超过30MHz的频率。 通过在VHF发生器的频率处提供穿过工件的第一VHF接地返回路径，等离子体跨越间隙延伸到工件。

公开(公告)号：US07585685B2

公开(公告)日：2009-09-08

申请号：US11508374

申请日：2006-08-23

申请人： Daniel J. Hoffman

发明人： Daniel J. Hoffman

IPC分类号： G01R31/26 ,  H01L21/66

CPC分类号： H01J37/32174 ,  H01J37/32935

摘要： The voltage of a wafer on the pedestal of an RF plasma reactor is instantly determined from the applied bias current and the applied bias voltage sampled during plasma processing of the wafer using a pair constants. Prior to plasma processing of the wafer, a determination is made of first and second constants based upon electrical characteristics of a transmission line through which RF power is coupled to the pedestal. During plasma processing of the wafer, the wafer voltage is determined by performing the steps of sampling an RF input current and an RF input voltage at the impedance match circuit; multiplying the RF input voltage by the first constant to produce a first product; multiplying the RF input current by the second constant to produce a second product; and computing a sum of the first and second products.

摘要翻译： RF等离子体反应器的基座上的晶片的电压立即由施加的偏置电流和使用对常数在晶片的等离子体处理期间采样的施加的偏置电压确定。 在等离子体处理晶片之前，基于RF功率与基座耦合的传输线的电特性确定第一和第二常数。 在晶片的等离子体处理期间，通过执行在阻抗匹配电路处对RF输入电流和RF输入电压进行采样的步骤来确定晶片电压; 将RF输入电压乘以第一常数以产生第一乘积; 将RF输入电流乘以第二常数以产生第二乘积; 以及计算所述第一和第二乘积的和。

公开(公告)号：US20080276958A1

公开(公告)日：2008-11-13

申请号：US11745451

申请日：2007-05-08

申请人： Vineet Mehta ,  Karl Brown ,  John A. Pipitone ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Keith A. Miller ,  Vijay D. Parkhe

发明人： Vineet Mehta ,  Karl Brown ,  John A. Pipitone ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Keith A. Miller ,  Vijay D. Parkhe

IPC分类号： C25F3/12 ,  C25F7/00

CPC分类号： B08B7/0035 ,  C25F7/00 ,  H01J37/32009 ,  H01J37/32541 ,  H01L21/02046 ,  H01L21/0206

摘要： A substrate cleaning chamber includes a contoured ceiling electrode having an arcuate surface that faces a substrate support and has a variable cross-sectional thickness to vary the gap size between the arcuate surface and the substrate support to provide a varying plasma density across the substrate support. A dielectric ring for the cleaning chamber comprises a base, a ridge, and a radially inward ledge that covers the peripheral lip of the substrate support. A base shield comprises a circular disc having at least one perimeter wall. Cleaning and conditioning processes for the cleaning chamber are also described.

摘要翻译： 衬底清洁室包括具有面向衬底支撑件的弓形表面的轮廓天花板电极，并且具有可变的横截面厚度以改变弧形表面和衬底支撑件之间的间隙尺寸，以在衬底支撑件上提供变化的等离子体密度。 用于清洁室的介电环包括覆盖基板支撑件的周缘的基部，脊和径向向内的凸缘。 底座包括具有至少一个周边壁的圆盘。 还描述了清洁室的清洁和调节过程。