公开(公告)号：US20120038715A1

公开(公告)日：2012-02-16

申请号：US13280022

申请日：2011-10-24

申请人： Takakiyo HARIGAI ,  Yoshiaki Tanaka ,  Hideaki Adachi ,  Eiji Fujii

发明人： Takakiyo HARIGAI ,  Yoshiaki Tanaka ,  Hideaki Adachi ,  Eiji Fujii

IPC分类号： B41J2/045 ,  H02N2/18 ,  B32B9/00 ,  G01C19/56

CPC分类号： H01L41/187 ,  B41J2/14032 ,  G01C19/5621 ,  G01C19/5628 ,  H01L41/0478 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1136 ,  H01L41/316

摘要： The purpose of the present invention is to provide a lead-free piezoelectric film including a lead-free ferroelectric material and having low dielectric loss and high piezoelectric performance comparable to that of PZT, and a method of manufacturing the lead-free piezoelectric film.The present invention is directed to a piezoelectric film comprising a NaxLa1-xNiO3-x layer with a (001) orientation and a (Na,Bi)TiO3—BaTiO3 layer with a (001) orientation, wherein x is not less than 0.01 and not more than 0.1, and the NaxLa1-xNiO3-x layer (0.01≦x≦0.1) and the (Na,Bi)TiO3—BaTiO3 layer are laminated.

摘要翻译： 本发明的目的是提供一种包含无铅铁电材料的无铅压电膜，其具有与PZT相当的低介电损耗和高压电性能，以及制造无铅压电膜的方法。 本发明涉及一种包括具有（001）取向的NaxLa1-xNiO3-x层和（001）取向的（Na，Bi）TiO3-BaTiO3层的压电膜，其中x不小于0.01而不是 大于0.1，NaxLa1-xNiO3-x层（0.01＆nlE; x＆nlE; 0.1）和（Na，Bi）TiO3-BaTiO3层层叠。

公开(公告)号：US08093784B2

公开(公告)日：2012-01-10

申请号：US13191139

申请日：2011-07-26

申请人： Takakiyo Harigai ,  Michihito Ueda ,  Hideaki Adachi ,  Eiji Fujii

发明人： Takakiyo Harigai ,  Michihito Ueda ,  Hideaki Adachi ,  Eiji Fujii

IPC分类号： H02N2/00 ,  H01L41/107

CPC分类号： H02N2/186 ,  H01L41/1134

摘要： Provided is a relatively easy-to-fabricate piezoelectric power generating element capable of generating a large amount of electric power while comprising a bridge-type vibration beam that is resistant to damage from external vibration. This element comprises a support member, a strip-shaped vibration beam, a piezoelectric layer, and electrodes. The first and second ends of the vibration beam are fixed to the support member. The piezoelectric layer and the electrodes are provided on the surface of the vibration beam. The vibration beam extends in a plane when it is not vibrating. The vibration beam has a first portion that extends from the first end fixed to the support member, a second portion that extends from the second end fixed to the support member, and a third portion that connects the end of the first portion opposite to the first end and the end of the second portion opposite to the second end. The vibration beam has a shape such that, when viewed in a direction perpendicular to the plane, a first direction in which the first portion extends is a direction closer to the second end, and a second direction in which the second portion extends is a direction closer to the first end, the first and second directions each make an angle of more than 0° and less than 90° with respect to a straight line connecting the center of the first end and the center of the second end, and the third portion intersects once the straight line.

摘要翻译： 提供一种相对容易制造的能够产生大量电力的压电发电元件，同时包括耐外部振动损坏的桥式振动梁。 该元件包括支撑构件，条形振动梁，压电层和电极。 振动梁的第一和第二端固定在支撑构件上。 压电层和电极设置在振动梁的表面上。 当振动梁不振动时，振动梁在平面内延伸。 振动梁具有从固定到支撑构件的第一端延伸的第一部分，从固定到支撑构件的第二端延伸的第二部分，以及连接第一部分的与第一部分相对的端部的第三部分 端部和第二部分的与第二端相对的端部。 所述振动梁具有这样的形状：当从垂直于所述平面的方向观察时，所述第一部分延伸的第一方向是更靠近所述第二端的方向，并且所述第二部分延伸的第二方向是方向 更靠近第一端，第一和第二方向相对于连接第一端的中心和第二端的中心的直线大于0°且小于90°，​​并且第三部分 相交一次直线。

公开(公告)号：US07312558B2

公开(公告)日：2007-12-25

申请号：US11097924

申请日：2005-04-01

申请人： Satoru Fujii ,  Takeshi Kamada ,  Atsushi Tomozawa ,  Eiji Fujii

发明人： Satoru Fujii ,  Takeshi Kamada ,  Atsushi Tomozawa ,  Eiji Fujii

IPC分类号： H01L41/187 ,  H01L41/04 ,  H01L41/16

CPC分类号： B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  G01C19/5607 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316

摘要： In a piezoelectric element, a cubic or tetragonal orientation control layer (15) is provided on a first electrode layer (14), and formed on the orientation control layer (15) is a piezoelectric layer (16) having a rhombohedral or tetragonal crystalline structure and made of lead zirconate titanate to which a Pb-containing complex perovskite compound expressed by the chemical formula Pb(AaBb)O3 has been added in an amount that is from 1 mol % to 50 mol %. The piezoelectric layer (16) is formed so that the crystal grains thereof become columnar grains which extend in the thickness direction of the piezoelectric layer (16) and in which the ratio of the average cross-sectional diameter to the length is from 1/50 to 1/14.

摘要翻译： 在压电元件中，在第一电极层（14）上设置立方或四方取向控制层（15），并且在取向控制层（15）上形成具有菱形或四边形晶体结构的压电层（16） 并由化学式Pb（A a B b B b）O 3表示的含Pb复合钙钛矿化合物的锆钛酸铅制成， 的添加量为1摩尔％〜50摩尔％。 形成压电体层16，使其晶粒成为在压电体层16的厚度方向上延伸的柱状晶粒，其平均截面直径与长度的比率为1/50 到1/14。

公开(公告)号：US07306965B2

公开(公告)日：2007-12-11

申请号：US11064999

申请日：2005-02-25

申请人： Hideo Torii ,  Eiji Fujii ,  Taku Hirasawa ,  Atsushi Tomozawa

发明人： Hideo Torii ,  Eiji Fujii ,  Taku Hirasawa ,  Atsushi Tomozawa

IPC分类号： H01L21/00

CPC分类号： C01B13/0251 ,  C25D1/003

摘要： A first electrode thin film is formed on an upper surface of the oxygen ion conductive thin film so as to have a through hole. A resistor is formed on part of the upper surface of the oxygen conductive thin film located in the through hole. Thus, the oxygen ion conductive thin film can be directly heated by the resistor, so that oxygen ions can be speedily transferred with a low power. Therefore, the oxygen ion conductivity of the oxygen ion conductive thin film can be improved.

摘要翻译： 第一电极薄膜形成在氧离子传导性薄膜的上表面上以具有通孔。 在位于通孔中的导电薄膜的上表面的一部分上形成电阻器。 因此，可以通过电阻器直接加热氧离子传导性薄膜，能够以低功率快速地转移氧离子。 因此，能够提高氧离子传导性薄膜的氧离子传导性。

公开(公告)号：US07288456B2

公开(公告)日：2007-10-30

申请号：US11169040

申请日：2005-06-29

申请人： Toyoji Ito ,  Eiji Fujii ,  Kazuo Umeda

发明人： Toyoji Ito ,  Eiji Fujii ,  Kazuo Umeda

IPC分类号： H01L21/336

CPC分类号： H01L27/11502 ,  H01L27/105 ,  H01L27/10852 ,  H01L27/10894 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper electrode; an interlayer dielectric film formed so as to cover the periphery of the capacitor; and an upper hydrogen-barrier film covering the top and lateral portions of the capacitor. An opening, which exposes the lower hydrogen-barrier film where the lower hydrogen-barrier film is located around the capacitor, and which is tapered and flares upward, is formed in the interlayer dielectric film, and the upper hydrogen-barrier film is formed along the lateral and bottom faces of the opening, and is in contact with the lower hydrogen-barrier film in the opening.

公开(公告)号：US07193756B2

公开(公告)日：2007-03-20

申请号：US10997143

申请日：2004-11-24

申请人： Akiko Murata ,  Eiji Fujii ,  Hideo Torii

发明人： Akiko Murata ,  Eiji Fujii ,  Hideo Torii

IPC分类号： G02B5/32 ,  B41J2/045

CPC分类号： B41J2/14233 ,  B41J2/14282 ,  B41J2202/03 ,  H01L41/0815 ,  H01L41/094 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316

摘要： A piezoelectric element includes a first electrode film; a piezoelectric layered film including a first piezoelectric thin film formed on the first electrode film and a second piezoelectric thin film formed on the first piezoelectric thin film; and a second electrode film formed on the second piezoelectric thin film. Each of the first and second piezoelectric thin films is an aggregate of columnar grains grown unidirectionally along the thickness direction of the piezoelectric layered film. The Pb content of the first piezoelectric thin film is smaller than the Pb content of the second piezoelectric thin film. A columnar grain of the second piezoelectric thin film has a larger average cross-sectional diameter than an average cross-sectional diameter of a columnar grain of the first piezoelectric thin film. A ratio of the thickness of the piezoelectric layered film to the average cross-sectional diameter of the second piezoelectric thin film is not less than 20 and not more than 60.

摘要翻译： 压电元件包括​​第一电极膜; 压电层叠膜，包括形成在第一电极膜上的第一压电薄膜和形成在第一压电薄膜上的第二压电薄膜; 以及形成在第二压电薄膜上的第二电极膜。 第一和第二压电薄膜中的每一个是沿着压电层叠膜的厚度方向单向生长的柱状晶粒的集合体。 第一压电薄膜的Pb含量小于第二压电薄膜的Pb含量。 第二压电薄膜的柱状晶粒的平均截面直径大于第一压电薄膜的柱状晶粒的平均截面直径。 压电层叠膜的厚度与第二压电薄膜的平均截面直径的比率不小于20并且不大于60。

公开(公告)号：US07185540B2

公开(公告)日：2007-03-06

申请号：US11409469

申请日：2006-04-21

申请人： Hideo Torii ,  Eiji Fujii ,  Atsushi Tomozawa ,  Akiko Murata ,  Ryoichi Takayama ,  Taku Hirasawa

发明人： Hideo Torii ,  Eiji Fujii ,  Atsushi Tomozawa ,  Akiko Murata ,  Ryoichi Takayama ,  Taku Hirasawa

IPC分类号： G01P9/04 ,  H01L41/047 ,  H01L41/083

CPC分类号： G01P15/0922 ,  B41J2/14233 ,  B41J2/14282 ,  B41J2002/1425 ,  B41J2202/03 ,  G01C19/5607 ,  H01L41/0477 ,  H01L41/0815 ,  H01L41/094 ,  H01L41/0973 ,  H01L41/316 ,  H01L41/319

摘要： In a piezoelectric element 20, a first electrode layer 2 made of an alloy of at least one metal selected from the group consisting of cobalt, nickel, iron, manganese and copper and a noble metal is formed on a silicon substrate 1, and a piezoelectric layer 3 made of a rhombohedral or tetragonal perovskite oxide (e.g., PZT) is formed on the first electrode layer 2 so that the piezoelectric layer 3 is preferentially oriented along the (001) plane.

摘要翻译： 在压电元件20中，在硅基板1上形成由选自钴，镍，铁，锰和铜中的至少一种金属和贵金属构成的第一电极层2， 在第一电极层2上形成由菱方或四方钙钛矿氧化物（例如PZT）制成的层3，使得压电层3优先沿（001）面取向。

公开(公告)号：US20060187272A1

公开(公告)日：2006-08-24

申请号：US11409469

申请日：2006-04-21

申请人： Hideo Torii ,  Eiji Fujii ,  Atsushi Tomozawa ,  Akiko Murata ,  Ryoichi Takayama ,  Taku Hirasawa

发明人： Hideo Torii ,  Eiji Fujii ,  Atsushi Tomozawa ,  Akiko Murata ,  Ryoichi Takayama ,  Taku Hirasawa

IPC分类号： B41J2/045

CPC分类号： G01P15/0922 ,  B41J2/14233 ,  B41J2/14282 ,  B41J2002/1425 ,  B41J2202/03 ,  G01C19/5607 ,  H01L41/0477 ,  H01L41/0815 ,  H01L41/094 ,  H01L41/0973 ,  H01L41/316 ,  H01L41/319

摘要： In a piezoelectric element 20, a first electrode layer 2 made of an alloy of at least one metal selected from the group consisting of cobalt, nickel, iron, manganese and copper and a noble metal is formed on a silicon substrate 1, and a piezoelectric layer 3 made of a rhombohedral or tetragonal perovskite oxide (e.g., PZT) is formed on the first electrode layer 2 so that the piezoelectric layer 3 is preferentially oriented along the (001) plane.

公开(公告)号：US06969157B2

公开(公告)日：2005-11-29

申请号：US10445349

申请日：2003-05-23

申请人： Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Akiko Murata ,  Ryoichi Takayama ,  Taku Hirasawa

发明人： Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Akiko Murata ,  Ryoichi Takayama ,  Taku Hirasawa

IPC分类号： B41J2/14 ,  B41J2/16 ,  G01C19/5607 ,  H01L41/047 ,  H01L41/22 ,  H01L41/24 ,  B41J2/045

CPC分类号： G01C19/5607 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  B41J2002/14491 ,  H01L41/0477 ,  H01L41/0815 ,  H01L41/1876 ,  H01L41/316

摘要： A piezoelectric element includes a first electrode layer 14 provided on a substrate 11 and made of a noble metal to which at least one additive selected from the group consisting of Mg, Ca, Sr, Ba, Al and oxides thereof is added, an orientation control layer 15 provided on the first electrode layer 14 and made of a cubic or tetragonal perovskite oxide that is preferentially oriented along a (100) or (001) plane, and a piezoelectric layer 16 provided on the orientation control layer 15 and made of a rhombohedral or tetragonal perovskite oxide that is preferentially oriented along a (001) plane.

公开(公告)号：US20050239251A1

公开(公告)日：2005-10-27

申请号：US11169040

申请日：2005-06-29

申请人： Toyoji Ito ,  Eiji Fujii ,  Kazuo Umeda

发明人： Toyoji Ito ,  Eiji Fujii ,  Kazuo Umeda

IPC分类号： H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/115 ,  H01L21/336

CPC分类号： H01L27/11502 ,  H01L27/105 ,  H01L27/10852 ,  H01L27/10894 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper electrode; an interlayer dielectric film formed so as to cover the periphery of the capacitor; and an upper hydrogen-barrier film covering the top and lateral portions of the capacitor. An opening, which exposes the lower hydrogen-barrier film where the lower hydrogen-barrier film is located around the capacitor, and which is tapered and flares upward, is formed in the interlayer dielectric film, and the upper hydrogen-barrier film is formed along the lateral and bottom faces of the opening, and is in contact with the lower hydrogen-barrier film in the opening.

摘要翻译： 半导体器件包括：下阻氢膜; 形成在下部氢阻挡膜上并具有下部电极，电容绝缘膜和上部电极的电容器; 形成为覆盖电容器周围的层间绝缘膜; 以及覆盖电容器的顶部和侧部的上部氢阻挡膜。 在层间电介质膜中形成开口，该开口暴露出下阻氢膜位于电容器周围并在其间呈锥形并向上凸起的下阻氢膜，上阻氢膜沿着 开口的侧面和底面，并与开口中的下阻氢膜接触。