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    PATTERNING PROCESS FOR FIN-LIKE FIELD EFFECT TRANSISTOR (FINFET) DEVICE
    91.
    发明申请
    PATTERNING PROCESS FOR FIN-LIKE FIELD EFFECT TRANSISTOR (FINFET) DEVICE 有权
    精细场效应晶体管（FINFET）器件的仿真过程

    公开(公告)号：US20130203257A1

    公开(公告)日：2013-08-08

    申请号：US13368144

    申请日：2012-02-07

    Applicant: Ho Wei De ,  Ming-Feng Shieh ,  Ching-Yu Chang

    Inventor： Ho Wei De ,  Ming-Feng Shieh ,  Ching-Yu Chang

    IPC: H01L21/302 ,  H01L31/18

    CPC classification number: H01L21/845 ,  G03F1/00 ,  H01L21/823431

    Abstract: A method for patterning a plurality of features in a non-rectangular pattern on an integrated circuit device includes providing a substrate including a surface with a first layer and a second layer, forming a plurality of elongated protrusions in a third layer above the first and second layers, and forming a first patterned layer over the plurality of elongated protrusions. The plurality of elongated protrusions are etched to form a first pattern of the elongated protrusions, the first pattern including at least one inside corner. The method also includes forming a second patterned layer over the first pattern of elongated protrusions and forming a third patterned layer over the first pattern of elongated protrusions. The plurality of elongated protrusions are etched using the second and third patterned layers to form a second pattern of the elongated protrusions, the second pattern including at least one inside corner.

    Abstract translation: 一种用于在集成电路器件上以非矩形图案形成多个特征的方法包括提供包括具有第一层和第二层的表面的衬底，在第一和第二层上方的第三层中形成多个细长突起 层，并且在所述多个细长突起上形成第一图案化层。 多个细长突起被蚀刻以形成细长突起的第一图案，第一图案包括至少一个内角。 该方法还包括在细长突起的第一图案上方形成第二图案化层，并在第一图案的细长突起上形成第三图案化层。 使用第二和第三图案化层来蚀刻多个细长突起，以形成细长突起的第二图案，第二图案包括至少一个内角。

    Selective Bias Compensation for Patterning Steps in CMOS Processes
    92.
    发明申请
    Selective Bias Compensation for Patterning Steps in CMOS Processes 有权
    CMOS工艺中图案化步骤的选择性偏置补偿

    公开(公告)号：US20130164938A1

    公开(公告)日：2013-06-27

    申请号：US13335618

    申请日：2011-12-22

    Applicant: Ming-Feng Shieh ,  Ching-Yu Chang

    Inventor： Ming-Feng Shieh ,  Ching-Yu Chang

    IPC: H01L21/311 ,  G03F7/20

    CPC classification number: H01L21/0337 ,  H01L21/0273

    Abstract: A method includes forming a photo resist pattern, and performing a light-exposure on a first portion of the photo resist pattern, wherein a second portion of the photo resist pattern is not exposed to light. A photo-acid reactive material is coated on the first portion and the second portion of the photo resist pattern. The photo-acid reactive material reacts with the photo resist pattern to form a film. Portions of the photo-acid reactive material that do not react with the photo resist pattern are then removed, and the film is left on the photo resist pattern.

    Abstract translation: 一种方法包括形成光致抗蚀剂图案，并对光致抗蚀剂图案的第一部分进行曝光，其中光致抗蚀剂图案的第二部分不暴露于光。 在光致抗蚀剂图案的第一部分和第二部分上涂覆光酸反应性材料。 光酸反应性材料与光致抗蚀剂图案反应形成膜。 然后除去与光致抗蚀剂图案不反应的光酸反应性材料的部分，并且将膜留在光致抗蚀剂图案上。

    Method and material for forming a double exposure lithography pattern
    93.
    发明授权
    Method and material for forming a double exposure lithography pattern 有权
    用于形成双曝光光刻图案的方法和材料

    公开(公告)号：US08258056B2

    公开(公告)日：2012-09-04

    申请号：US12814172

    申请日：2010-06-11

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: H01L21/00

    CPC classification number: H01L21/76811 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/7684 ,  H01L23/522 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of lithography patterning includes forming a first material layer on a substrate; forming a first patterned resist layer including at least one opening therein on the first material layer; forming a second material layer on the first patterned resist layer and the first material layer; forming a second patterned resist layer including at least one opening therein on the second material layer; and etching the first and second material layers uncovered by the first and second patterned resist layers.

    Abstract translation: 光刻图案的方法包括在基底上形成第一材料层; 在所述第一材料层上形成包括至少一个开口的第一图案化抗蚀剂层; 在所述第一图案化抗蚀剂层和所述第一材料层上形成第二材料层; 在所述第二材料层上形成包括其中的至少一个开口的第二图案化抗蚀剂层; 以及蚀刻由第一和第二图案化抗蚀剂层未覆盖的第一和第二材料层。

    Method of forming a sacrificial layer
    95.
    发明授权
    Method of forming a sacrificial layer 有权
    形成牺牲层的方法

    公开(公告)号：US08183162B2

    公开(公告)日：2012-05-22

    申请号：US12536805

    申请日：2009-08-06

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: H01L21/302

    CPC classification number: H01L21/32139 ,  H01L21/31111 ,  H01L21/31133

    Abstract: The present disclosure provides a method for making a semiconductor device. The method includes forming a material layer on a substrate; forming a sacrificial layer on the material layer, where the material layer and sacrificial layer each as a thickness less than 100 angstrom; forming a patterned photoresist layer on the sacrificial layer; applying a first wet etching process to etch the sacrificial layer to form a patterned sacrificial layer using the patterned photoresist layer as a mask; applying a second wet etching process to etch the first material layer; and applying a third wet etching process to remove the patterned sacrificial layer.

    Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在基板上形成材料层; 在材料层上形成牺牲层，其中材料层和牺牲层各自的厚度小于100埃; 在所述牺牲层上形成图案化的光致抗蚀剂层; 施加第一湿蚀刻工艺以蚀刻牺牲层以使用图案化的光致抗蚀剂层作为掩模形成图案化的牺牲层; 施加第二湿蚀刻工艺以蚀刻第一材料层; 以及施加第三湿蚀刻工艺以去除图案化的牺牲层。

    METHOD AND PHOTORESIST WITH ZIPPER MECHANISM
    96.
    发明申请
    METHOD AND PHOTORESIST WITH ZIPPER MECHANISM 有权
    带拉链机构的方法与光电子学

    公开(公告)号：US20120107742A1

    公开(公告)日：2012-05-03

    申请号：US12916759

    申请日：2010-11-01

    Applicant: Fong-Cheng Lee ,  Ching-Yu Chang

    Inventor： Fong-Cheng Lee ,  Ching-Yu Chang

    IPC: G03F7/004 ,  G03F7/20

    CPC classification number: G03F7/0382 ,  G03F7/0392 ,  G03F7/325

    Abstract: The present disclosure provides a resist utilized in a photolithography patterning process. The resist includes a polymeric material having a plurality of zipper molecules, each including a first zipper portion and a second zipper portion, wherein the first and second zipper portions each include a plurality of zipper branches bonded together in pairs and cleavable to one of thermal energy, radiation energy, and chemical reaction.

    Abstract translation: 本公开提供了在光刻图案化工艺中使用的抗蚀剂。 抗蚀剂包括具有多个拉链分子的聚合材料，每个拉链分子包括第一拉链部分和第二拉链部分，其中第一和第二拉链部分各自包括成对地结合在一起的多个拉链分支并且可切割成热能之一 ，辐射能和化学反应。

    Method for forming a sacrificial sandwich structure
    97.
    发明授权
    Method for forming a sacrificial sandwich structure 有权
    牺牲夹层结构的形成方法

    公开(公告)号：US08163655B2

    公开(公告)日：2012-04-24

    申请号：US12560164

    申请日：2009-09-15

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: H01L21/302

    CPC classification number: H01L21/28123 ,  H01L21/0271 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/32132 ,  H01L21/32139 ,  H01L29/517

    Abstract: The present disclosure provides a method for making a semiconductor device. The method includes forming a first material layer on a substrate; forming a second material layer on the first material layer; forming a sacrificial layer on the second material layer; forming a patterned resist layer on the sacrificial layer; applying a first wet etching process using a first etch solution to the substrate to pattern the sacrificial layer using the patterned resist layer as a mask, resulting in a patterned sacrificial layer; applying an ammonia hydroxide-hydrogen peroxide-water mixture (APM) solution to the substrate to pattern the second material layer, resulting in a patterned second material layer; applying a second wet etching process using a second etch solution to the substrate to pattern the first material layer; and applying a third wet etching process using a third etch solution to remove the patterned sacrificial layer.

    Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在基底上形成第一材料层; 在所述第一材料层上形成第二材料层; 在所述第二材料层上形成牺牲层; 在所述牺牲层上形成图案化的抗蚀剂层; 将使用第一蚀刻溶液的第一湿蚀刻工艺应用于衬底，以使用图案化的抗蚀剂层作为掩模对牺牲层进行图案化，得到图案化的牺牲层; 将氨氢氧化物 - 过氧化氢 - 水混合物（APM）溶液施加到所述基底上以对所述第二材料层进行图案化，得到图案化的第二材料层; 使用第二蚀刻溶液将第二湿蚀刻工艺应用于所述衬底以对所述第一材料层进行图案化; 以及使用第三蚀刻溶液施加第三湿蚀刻工艺以去除图案化的牺牲层。

    Apparatus and method for immersion lithography
    98.
    发明授权
    Apparatus and method for immersion lithography 有权
    浸没式光刻装置及方法

    公开(公告)号：US08125611B2

    公开(公告)日：2012-02-28

    申请号：US11762651

    申请日：2007-06-13

    Applicant: Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jeng Lin

    Inventor： Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jeng Lin

    IPC: G03B27/42 ,  G03B27/52 ,  G03B27/58

    CPC classification number: G03F7/70341

    Abstract: Immersion lithography apparatus and method using a shield module are provided. An immersion lithography apparatus including a lens module having an imaging lens, a substrate table positioned beneath the lens module and configured for holding a substrate for processing, a fluid module for providing an immersion fluid to a space between the lens module and the substrate on the substrate table, and a shield module for covering an edge of the substrate during processing.

    Abstract translation: 提供了使用屏蔽模块的浸渍光刻设备和方法。 一种浸没式光刻设备，包括具有成像透镜的透镜模块，位于透镜模块下方的被配置用于保持用于处理的基板的基板台，用于在透镜模块和基板之间的空间中提供浸没流体的流体模块 衬底台和用于在处理期间覆盖衬底的边缘的屏蔽模块。

    PHOTOLITHOGRAPHY MATERIAL FOR IMMERSION LITHOGRAPHY PROCESSES
    99.
    发明申请
    PHOTOLITHOGRAPHY MATERIAL FOR IMMERSION LITHOGRAPHY PROCESSES 有权
    用于浸没光刻工艺的光刻材料

    公开(公告)号：US20120034558A1

    公开(公告)日：2012-02-09

    申请号：US12913191

    申请日：2010-10-27

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: G03F7/004 ,  G03F7/20

    CPC classification number: G03F7/0046 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/2041

    Abstract: A photolithography material is provided. The photolithography material is a surface modifying material. The photolithography material includes a polymer (e.g., fluorine polymer) that includes less than approximately 80% hydroxyl groups. In an embodiment, the photolithography material includes less than approximately 80% fluoro-alcohol functional units. Methods of using the photolithography material include as an additive to a photoresist or topcoat layer. The photolithography material may be used in an immersion lithography process.

    Abstract translation: 提供光刻材料。 光刻材料是表面改性材料。 光刻材料包括包含小于约80％羟基的聚合物（例如氟聚合物）。 在一个实施例中，光刻材料包括少于约80％的氟 - 醇官能单元。 使用光刻材料的方法包括作为光致抗蚀剂或顶涂层的添加剂。 光刻材料可以用于浸没式光刻工艺。

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