公开(公告)号：US20070181943A1

公开(公告)日：2007-08-09

申请号：US11653089

申请日：2007-01-12

申请人： Frank Pfirsch

发明人： Frank Pfirsch

IPC分类号： H01L29/76

CPC分类号： H01L29/7825 ,  H01L29/0634 ,  H01L29/0657 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/66325 ,  H01L29/66348 ,  H01L29/66681 ,  H01L29/66704 ,  H01L29/7393 ,  H01L29/7816

摘要： A power transistor includes a semiconductor layer an electrode layer. The semiconductor layer having a source zone, a drain zone spaced apart from the source zone in a lateral direction, a drift zone adjacent to the drain zone, and a body zone. The body zone is interposed between the drift zone and the source zone. The electrode layer is dielectrically insulated from the semiconductor layer, and includes a gate electrode divided into at least two sections and a field plate. The field plate is arranged at a first height level relative to the semiconductor layer. A first gate electrode section is arranged at least partially at a second height level, which is lower than the first height level relative to the semiconductor layer. A second gate electrode section, which is laterally displaced from the first gate electrode section, is disposed at a first intermediate level arranged between the first and second height levels.

摘要翻译： 功率晶体管包括半导体层和电极层。 所述半导体层具有源极区域，在横向方向上与所述源极区域隔开的漏极区域，与所述排出区域相邻的漂移区域以及主体区域。 体区位于漂移区和源区之间。 电极层与半导体层介电绝缘，并且包括划分为至少两个部分的栅电极和场板。 场板相对于半导体层布置在第一高度水平。 第一栅极电极部分至少部分地布置在相对于半导体层低于第一高度水平的第二高度水平处。 从第一栅极电极部分横向移位的第二栅极电极部分设置在布置在第一和第二高度电平之间的第一中间电平处。

公开(公告)号：US20060273346A1

公开(公告)日：2006-12-07

申请号：US11439452

申请日：2006-05-23

申请人： Frank Pfirsch

发明人： Frank Pfirsch

IPC分类号： H01L29/06

CPC分类号： H01L29/7397 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/404

摘要： One aspect of the invention relates to an edge structure for a semiconductor component having two electrodes arranged opposite one another on opposite sides of a semiconductor body having a doped zone of the first charge carrier type. The semiconductor body has at least one doped zone of the second charge carrier type extending from a surface into the depth of the semiconductor body and serving for forming a pn junction located in a central region surrounded by an edge region between the two electrodes. The edge region has at least one rectilinear edge section and at least one curved edge section and is formed in such a way that a breakdown voltage in the at least one rectilinear edge section is less than a breakdown voltage in the at least one curved edge section.

公开(公告)号：US06815769B2

公开(公告)日：2004-11-09

申请号：US10352825

申请日：2003-01-28

申请人： Frank Pfirsch ,  Carsten Schäffer

发明人： Frank Pfirsch ,  Carsten Schäffer

IPC分类号： H01L2976

CPC分类号： H01L29/402 ,  H01L29/0619 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/66348 ,  H01L29/7397

摘要： A trench power semiconductor component, in particular an IGBT, has an electrode (4) in a trench (3) that is laterally divided into a section (10) that serves as a gate and a section (11) that is connected to the source metallization (6). A method for making the trench power semiconductor component is also included.

摘要翻译： 沟槽功率半导体元件，特别是IGBT，在沟槽（3）中具有横向分为用作栅极的部分（10）和连接到源极的部分（11）的电极（4） 金属化（6）。 还包括制造沟槽功率半导体部件的方法。

公开(公告)号：US06803609B1

公开(公告)日：2004-10-12

申请号：US09603748

申请日：2000-06-26

申请人： Wolfgang Werner ,  Frank Pfirsch

发明人： Wolfgang Werner ,  Frank Pfirsch

IPC分类号： H01L2974

CPC分类号： H01L29/861 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/7395

摘要： A bipolar high-voltage power component, in particular an IGBT, includes a semiconductor body on which at least two mutually spaced apart electrodes are provided, between which a drift path is formed in a semiconductor region of a first conduction type. Floating zones of a second conduction type, opposite the first conduction type, are provided in the semiconductor region. When the power component is switched on or switched off, the floating zones respectively emit charge carriers of the second conduction type into the semiconductor region or take up the charge carriers from the semiconductor region. The floating zones are connected, through a respective MOS transistor with a channel of the second conduction type or a bipolar transistor with a base of the first conduction type, to active regions of the power component which are connected to the two electrodes.

摘要翻译： 双极型高压功率元件，特别是IGBT，包括：半导体体，其上设置有至少两个相互间隔开的电极，在第一导电类型的半导体区域之间形成有漂移路径。 在半导体区域中提供与第一导电类型相反的第二导电类型的浮动区域。 当电源组件接通或断开时，浮动区域分别将第二导电类型的电荷载流子引入半导体区域或从半导体区域吸收电荷载流子。 浮动区域通过具有第二导电类型的沟道的相应MOS晶体管或具有第一导电类型的基极的双极晶体管连接到连接到两个电极的功率部件的有源区域。

公开(公告)号：US06531748B2

公开(公告)日：2003-03-11

申请号：US09853522

申请日：2001-05-11

申请人： Frank Pfirsch

发明人： Frank Pfirsch

IPC分类号： H01L2972

CPC分类号： H01L29/7802 ,  H01L29/165 ,  H01L29/205 ,  H01L29/267

摘要： A semiconductor power component has a MOS structure in which the source region is formed of a material whose band gap is smaller than the band gap of the material of the channel region. This measure reduces the gain of a parasitic bipolar transistor.

公开(公告)号：US06465869B2

公开(公告)日：2002-10-15

申请号：US09867502

申请日：2001-05-30

申请人： Dirk Ahlers ,  Frank Pfirsch

发明人： Dirk Ahlers ,  Frank Pfirsch

IPC分类号： H01L2900

CPC分类号： H01L29/7816 ,  H01L29/0634 ,  H01L29/66674 ,  H01L29/66712 ,  H01L29/7801 ,  H01L29/7802

摘要： A compensation component includes a drift path formed of p-conducting and n-conducting layers which are led around or along a trench. A process for producing the compensation component is also provided.

摘要翻译： 补偿部件包括由p导电层和n导电层形成的漂移路径，其被引导在沟槽周围或沿着沟槽。 还提供了一种制造补偿部件的方法。

公开(公告)号：US06320205B1

公开(公告)日：2001-11-20

申请号：US09663570

申请日：2000-09-15

申请人： Frank Pfirsch ,  Roland Rupp

发明人： Frank Pfirsch ,  Roland Rupp

IPC分类号： H01L310312

CPC分类号： H01L29/405 ,  H01L29/1608 ,  H01L29/872

摘要： An edge termination for a semiconductor component containing a semiconductor body formed of silicon carbide. The edge termination has at least one diode chain that is insulated from the semiconductor body and provided with a plurality of semiconductor layers having alternating conductivity types.

摘要翻译： 一种包含由碳化硅形成的半导体本体的半导体部件的边缘端接。 边缘端接具有至少一个二极管链，其与半导体本体绝缘并且具有多个具有交替导电类型的半导体层。

公开(公告)号：US5204273A

公开(公告)日：1993-04-20

申请号：US723800

申请日：1991-07-01

申请人： Reinhold Kuhnert ,  Heinz Mitlehner ,  Hans-Joachim Schulze ,  Frank Pfirsch

发明人： Reinhold Kuhnert ,  Heinz Mitlehner ,  Hans-Joachim Schulze ,  Frank Pfirsch

IPC分类号： H01L29/417 ,  H01L29/74

CPC分类号： H01L29/7428 ,  H01L29/7408

摘要： Thyristor with defined lateral resistor and method for the manufacturing thereof. The thyristor has a resistor area (5) for the generation of a lateral resistor, for example between an emitter field (8) and an auxiliary emitter field (7), whereby the resistor are (5) has a defined lower doping concentration than the layer (2) surrounding it. The defined lower doping concentration is generated by recesses (3) in an occupation layer and can be adjusted by the ratio of the widths alternately arranged recesses (3) and ribs (4). The recess (3) and the ribs (4) are generated either by diffusion and subsequent etching or by implantation with an implantation mask, before the deposition layer is driven into the semiconductor body of the thyristor by heat supply from a surface.

摘要翻译： 具有限定横向电阻的晶闸管及其制造方法。 晶闸管具有用于产生横向电阻器的电阻器区域（5），例如在发射极场（8）和辅助发射极场（7）之间，由此电阻器（5）具有比 层（2）周围。 限定的较低掺杂浓度由占用层中的凹部（3）产生，并且可以通过交替布置的凹部（3）和肋（4）的宽度的比率来调节。 在通过从表面的热供应将沉积层驱动到晶闸管的半导体本体之前，通过扩散和随后的蚀刻或通过注入掩模注入来产生凹部（3）和肋（4）。

公开(公告)号：US08779462B2

公开(公告)日：2014-07-15

申请号：US12123278

申请日：2008-05-19

申请人： Hans-Joachim Schulze ,  Hans-Joerg Timme ,  Frank Pfirsch

发明人： Hans-Joachim Schulze ,  Hans-Joerg Timme ,  Frank Pfirsch

IPC分类号： H01L29/34 ,  H01L21/04

CPC分类号： H01L29/36 ,  H01L21/22 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/3225 ,  H01L29/32 ,  H03H9/02047 ,  H03H9/175

摘要： The semiconductor substrate includes a high-ohmic semiconductor material with a conduction band edge and a valence band edge, separated by a bandgap, wherein the semiconductor material includes acceptor or donor impurity atoms or crystal defects, whose energy levels are located at least 120 meV from the conduction band edge, as well as from the valence band edge in the bandgap; and wherein the concentration of the impurity atoms or crystal defects is larger than 1×1012 cm−3.

摘要翻译： 半导体衬底包括具有导带边缘和价带边缘的高电阻半导体材料，带隙由带隙分开，其中半导体材料包括受体或施主杂质原子或晶体缺陷，其能级位于至少120meV 导带边缘，以及带隙中的价带边缘; 并且其中杂质原子或晶体缺陷的浓度大于1×10 12 cm -3。

公开(公告)号：US08643085B2

公开(公告)日：2014-02-04

申请号：US11234585

申请日：2005-09-23

申请人： Frank Pfirsch

发明人： Frank Pfirsch

IPC分类号： H01L29/66

CPC分类号： H01L29/7815 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/41 ,  H01L29/41766 ,  H01L29/66712 ,  H01L29/7802

摘要： A high-voltage-resistant semiconductor component (1) has vertically conductive semiconductor areas (17) and a trench structure (5). These vertically conductive semiconductor areas are formed from semiconductor body areas (10) of a first conductivity type and are surrounded by a trench structure (5) on the upper face (6) of the semiconductor component. For this purpose the trench structure has a base (7) and a wall area (8) and is filled with a material (9) with a relatively high dielectric constant (εr). The base area (7) of the trench structure (5) is provided with a heavily doped semiconductor material (11) of the same conductivity type as the lightly doped semiconductor body areas (17), and/or having a metallically conductive material (12).

摘要翻译： 耐高压半导体元件（1）具有垂直导电半导体区域（17）和沟槽结构（5）。 这些垂直导电半导体区域由第一导电类型的半导体主体区域（10）形成，并被半导体部件的上表面（6）上的沟槽结构（5）围绕。 为此，沟槽结构具有基部（7）和壁部区域（8），并且填充有具有较高介电常数（ε）的材料（9）。 沟槽结构（5）的基区（7）设置有与轻掺杂半导体体区（17）相同导电类型的重掺杂半导体材料（11）和/或具有金属导电材料（12） ）。