公开(公告)号：US5204273A

公开(公告)日：1993-04-20

申请号：US723800

申请日：1991-07-01

申请人： Reinhold Kuhnert ,  Heinz Mitlehner ,  Hans-Joachim Schulze ,  Frank Pfirsch

发明人： Reinhold Kuhnert ,  Heinz Mitlehner ,  Hans-Joachim Schulze ,  Frank Pfirsch

IPC分类号： H01L29/417 ,  H01L29/74

CPC分类号： H01L29/7428 ,  H01L29/7408

摘要： Thyristor with defined lateral resistor and method for the manufacturing thereof. The thyristor has a resistor area (5) for the generation of a lateral resistor, for example between an emitter field (8) and an auxiliary emitter field (7), whereby the resistor are (5) has a defined lower doping concentration than the layer (2) surrounding it. The defined lower doping concentration is generated by recesses (3) in an occupation layer and can be adjusted by the ratio of the widths alternately arranged recesses (3) and ribs (4). The recess (3) and the ribs (4) are generated either by diffusion and subsequent etching or by implantation with an implantation mask, before the deposition layer is driven into the semiconductor body of the thyristor by heat supply from a surface.

摘要翻译： 具有限定横向电阻的晶闸管及其制造方法。 晶闸管具有用于产生横向电阻器的电阻器区域（5），例如在发射极场（8）和辅助发射极场（7）之间，由此电阻器（5）具有比 层（2）周围。 限定的较低掺杂浓度由占用层中的凹部（3）产生，并且可以通过交替布置的凹部（3）和肋（4）的宽度的比率来调节。 在通过从表面的热供应将沉积层驱动到晶闸管的半导体本体之前，通过扩散和随后的蚀刻或通过注入掩模注入来产生凹部（3）和肋（4）。

公开(公告)号：US4820656A

公开(公告)日：1989-04-11

申请号：US86914

申请日：1987-08-19

申请人： Hans-Joachim Schulze ,  Reinhold Kuhnert

发明人： Hans-Joachim Schulze ,  Reinhold Kuhnert

IPC分类号： H01L21/223 ,  H01L21/033 ,  H01L21/22 ,  H01L21/225 ,  H01L29/06 ,  H01L29/36 ,  H01L21/383

CPC分类号： H01L21/0334 ,  H01L21/22 ,  H01L21/2252 ,  H01L29/0615 ,  H01L29/36 ,  Y10S438/965

摘要： A method for producing a p-doped semiconductor region in an n-conductive semiconductor body by means of diffusion using a combination of both aluminum and boron as dopants. The semiconductor body is positioned within a hollow silicon member which itself is located within a refractory tube. The refractory tube is evacuated to a very low pressure and then the interior of the tube is heated for a time and at a temperature sufficient to diffuse both aluminum and boron into the semiconductor body.

摘要翻译： 通过使用铝和硼的组合作为掺杂剂的扩散，在n导电半导体主体中产生p掺杂半导体区域的方法。 半导体本体位于中空硅构件内，其本身位于耐火管内。 将耐火管抽真空至非常低的压力，然后将管内部加热足以将铝和硼扩散到半导体本体中的时间和温度。

公开(公告)号：US4757031A

公开(公告)日：1988-07-12

申请号：US086269

申请日：1987-08-17

申请人： Reinhold Kuhnert ,  Hans-Joachim Schulze

发明人： Reinhold Kuhnert ,  Hans-Joachim Schulze

IPC分类号： H01L21/033 ,  H01L21/225 ,  H01L29/06 ,  H01L29/74 ,  H01L21/383

CPC分类号： H01L29/0615 ,  H01L21/0334 ,  H01L21/2252 ,  Y10S438/965

摘要： A method for the manufacture of a pn-junction having high dielectric strength starting with a doped semiconductor body of a first conductivity type. A zone of a second conductivity type is formed in the semiconductor body inwardly from a surface thereof. At least one recess is then provided inwardly from the surface and including a recess which is formed at the extreme marginal edge of the semiconductor body. Dopant of the second conductivity type is diffused into the semiconductor body to form zones of varying dopant penetration depths from the center of the body to the marginal edge.

摘要翻译： 一种从第一导电类型的掺杂半导体本体开始制造具有高介电强度的pn结的方法。 第二导电类型的区域从其表面向内形成在半导体本体中。 然后至少一个凹部从表面向内提供，并且包括形成在半导体主体的最外边缘处的凹部。 第二导电类型的掺杂剂扩散到半导体本体中以形成从主体的中心到边缘的不同掺杂剂穿透深度的区域。

公开(公告)号：US4757366A

公开(公告)日：1988-07-12

申请号：US846582

申请日：1986-03-31

申请人： Tibor Salanki ,  Reinhold Kuhnert ,  Heinz Mitlehner

发明人： Tibor Salanki ,  Reinhold Kuhnert ,  Heinz Mitlehner

IPC分类号： H01L29/74 ,  G02B6/42 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/10 ,  H01L31/111 ,  H01L31/16 ,  H01L23/10 ,  H01L29/40

CPC分类号： H01L31/0203 ,  G02B6/4295 ,  H01L31/1113

摘要： A light-triggerable thyristor comprises a cathode contact and a light conductor arranged in a bore thereof for supplying trigger energy. In order to obtain optimally low losses of the trigger energy and to guarantee simple assembly and interchangeability, the end of the light conductor at the side of the thyristor is surrounded by a rigid sleeve which is pluggable into a sleeve-shaped insert mounted in the bore. In particular, a central region of the cathode contact is fashioned raised in comparison to a flange-like projection of the cathode contact which is connected to a ceramic envelope, and the central region is provided with a groove which serves for receiving an angled portion of the rigid sleeve. The invention is particularly suited for power thyristors in high-voltage DC transmission systems.

摘要翻译： 光触发晶闸管包括阴极接触件和布置在其孔中的光导体，用于提供触发能量。 为了获得触发能量的最佳低损失并且为了保证简单的组装和可互换性，在晶闸管侧面的光导体的端部被刚性套筒包围，刚性套筒可插入安装在孔中的套筒形插入件 。 特别地，与连接到陶瓷外壳的阴极接触件的凸缘状突起相比，阴极接触件的中心区域形成凸起，并且中心区域设置有用于接收角度部分的凹槽 刚性套筒。 本发明特别适用于高压直流输电系统中的功率晶闸管。

公开(公告)号：US4728371A

公开(公告)日：1988-03-01

申请号：US838326

申请日：1986-03-11

申请人： Ernst W. Haas ,  Joachim Martin ,  Heinz Mitlehner ,  Reinhold Kuhnert

发明人： Ernst W. Haas ,  Joachim Martin ,  Heinz Mitlehner ,  Reinhold Kuhnert

IPC分类号： C30B29/06 ,  C30B31/20 ,  H01L21/261 ,  H01L21/263

CPC分类号： C30B31/20 ,  H01L21/261 ,  Y10S148/165

摘要： A method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation according to the reaction Si.sup.30 (n,.gamma.) Si.sup.31 .beta..sup.- P.sup.31 includes the steps of covering the silicon crystal wafer with neutron-absorbing materials of different thicknesses during the irradiation, and selecting materials having isotopes having a high absorption cross-section which yield stable isotopes in the nuclear reaction having small or short-lived activity. Suitable isotopes are B.sup.10, Cd.sup.113, Sm.sup.149, Gd.sup.155 and Gd.sup.157. The regions are generated photolithographically. By such specific material selection, very small layer thicknesses can be used and microfine surface zones or areas can be doped with high geometrical precision and large penetration depth. The method is particularly suited for manufacturing power thyristors.

摘要翻译： 根据反应Si30（n，γ）Si31β-P31通过中子照射在硅晶片中制造具有可调均匀掺杂的区域的方法包括以下步骤：在照射期间用不同厚度的中子吸收材料覆盖硅晶片 以及选择具有高吸收截面的同位素的材料，其在具有小或短寿命的核反应中产生稳定的同位素。 合适的同位素是B10，Cd113，Sm149，Gd155和Gd157。 光刻地产生这些区域。 通过这样的具体材料选择，可以使用非常小的层厚度，并且可以以高几何精度和大的穿透深度掺杂微细表面区域或区域。 该方法特别适用于制造功率晶闸管。

公开(公告)号：US5379942A

公开(公告)日：1995-01-10

申请号：US157915

申请日：1993-11-24

申请人： Reinhold Kuhnert ,  Herbert Schwarzbauer

发明人： Reinhold Kuhnert ,  Herbert Schwarzbauer

IPC分类号： B23K1/19 ,  B23K20/00 ,  B30B5/02 ,  B30B15/02 ,  H01L21/48 ,  H01L21/52 ,  H01L21/603 ,  H01L23/12 ,  H01L23/13 ,  H01L23/40 ,  H05K1/03 ,  H05K3/00 ,  B23K20/16

CPC分类号： B30B5/02 ,  B23K20/002 ,  B30B15/024 ,  H01L21/4878 ,  H01L23/13 ,  H01L24/75 ,  H01L24/83 ,  H05K3/0014 ,  B23K2201/40 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/75315 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15787 ,  H01L2924/3511 ,  H05K1/0306 ,  H05K2201/09018 ,  H05K2203/1105 ,  H05K2203/302

摘要： A method for producing a semiconductor modular structure includes placing semiconductor bodies, a ceramic substrate with metallizing, and a metal base plate, in an elastomer compression mold. A heatable pressure ram with a surface being concave relative to the base plate is placed on the base plate. At least the base plate and the ceramic substrate are convexely deformed and joined with pressure exerted by the pressure ram, at a temperature above room temperature.

摘要翻译： 一种用于制造半导体模块化结构的方法包括将半导体本体，具有金属化的陶瓷衬底和金属基板放置在弹性体压缩模具中。 将具有相对于基板凹入的表面的可加压压头放置在基板上。 至少基板和陶瓷基板在高于室温的温度下凸起变形并与压力柱施加的压力接合。

公开(公告)号：US5436502A

公开(公告)日：1995-07-25

申请号：US327220

申请日：1994-10-21

申请人： Reinhold Kuhnert ,  Peter Tuerkes

发明人： Reinhold Kuhnert ,  Peter Tuerkes

IPC分类号： H01L23/58 ,  H01L23/36 ,  H01L23/373 ,  H01L23/02 ,  H01L29/74

CPC分类号： H01L23/36 ,  H01L23/3736 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/32245 ,  H01L2224/4847 ,  H01L2224/48491 ,  H01L2224/83048 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/351

摘要： A semiconductor component comprises a semiconductor body that has its underside secured on a metallic substrate and is joined at its upper side to an auxiliary member composed of a material having great thermal conductivity and which serves as a heat buffer. This auxiliary member increases the loadability of the semiconductor component with respect to additional, thermal stressing pulses.

摘要翻译： 半导体部件包括半导体本体，其下侧固定在金属基板上，并且在其上侧连接到由具有高导热性并且用作热缓冲器的材料构成的辅助部件。 该辅助部件相对于额外的热应力脉冲增加了半导体部件的负载能力。

公开(公告)号：US5786633A

公开(公告)日：1998-07-28

申请号：US8734

申请日：1993-01-25

申请人： Eckhard Wolfgang ,  Reinhold Kuhnert

发明人： Eckhard Wolfgang ,  Reinhold Kuhnert

IPC分类号： H01L23/373 ,  H01L23/492 ,  H01L23/36

CPC分类号： H01L24/32 ,  H01L23/373 ,  H01L23/3732 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/4928 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/8384 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/19043

摘要： A semiconductor module having a high dissipated power has an electrically insulating and thermally conducting layer of crystalline carbon provided between a semiconductor chip and a heat elimination element, whereby the semiconductor chip, the insulating layer and the heat elimination element are connected via an intermediate layer and via connecting layers of silver by pressure sintering. For low-voltage applications, a layer of amorphous carbon can alternatively be employed instead of the layer of crystalline carbon. Extremely low heat transmission resistance between the semiconductor chip and the heat elimination element is provided.

摘要翻译： 具有高耗散功率的半导体模块具有设置在半导体芯片和散热元件之间的电绝缘且导热的结晶碳层，由此半导体芯片，绝缘层和散热元件经由中间层和 通过压力烧结连接银层。 对于低电压应用，可替代地使用一层非晶碳代替结晶碳层。 提供半导体芯片和散热元件之间极低的传热阻力。

公开(公告)号：US5083177A

公开(公告)日：1992-01-21

申请号：US653968

申请日：1991-02-12

申请人： Peter Tuerkes ,  Reinhold Kuhnert

发明人： Peter Tuerkes ,  Reinhold Kuhnert

IPC分类号： H01L29/74 ,  H01L31/0352 ,  H01L31/10 ,  H01L31/111

CPC分类号： H01L31/03529 ,  H01L31/1113 ,  Y02E10/50

摘要： A thyristor having low-reflection light-triggering structure. In a light-triggerable thyristor, pyramidal depressions are formed in a simple manner by a preferred etching method, being formed in the region of the photon entry face in order to produce a low-reflection light-triggering structure. Incident light is absorbed in the pyramidal depressions largely independent of the wavelength of the incident light and nearly completely. The low-reflection light-triggering structure thereby produced can be formed with relatively little outlay. This is especially true when a defined overhead ignition voltage is simultaneously set by the pyramidal depressions.

摘要翻译： 具有低反射光触发结构的晶闸管。 在光触发晶闸管中，通过优选的蚀刻方法以简单的方式形成锥形凹陷，形成在光子入射面的区域中，以便产生低反射光触发结构。 入射光在锥形凹陷中被吸收，其主要与入射光的波长几乎完全相同。 由此产生的低反射光触发结构可以以相对较少的花费形成。 当定义的顶点点火电压由金字塔形凹陷同时设定时尤其如此。

公开(公告)号：US5077224A

公开(公告)日：1991-12-31

申请号：US722176

申请日：1991-06-27

申请人： Herbert Schwarzbauer ,  Reinhold Kuhnert

发明人： Herbert Schwarzbauer ,  Reinhold Kuhnert

IPC分类号： H01L21/332 ,  H01L29/06 ,  H01L29/74

CPC分类号： H01L29/66363 ,  H01L29/0615 ,  H01L29/74 ,  Y10S438/965

摘要： A thyristor having high forward and reverse blocking capability and a method for the manufacture thereof. The thyristor has a p-base region separated from an n-base lying therebelow by a first planar pn-junction that very gradually approaches an upper side of the thyristor at its edge region. A p-emitter is composed of a p-conductive layer inserted at the under side of the thyristor that is continued in a p-conductive lateral zone that laterally limits the thyristor and extends from an under side up to the upper side. This p-conductive lateral zone merges into a p-conductive semiconductor zone that is inserted at the upper side of the thyristor. This latter p-conductive semiconductor zone extends from a part of the lateral zone lying at the upper side, proceeds along the upper side of the thyristor in the direction toward the edge termination of the p-base region, and is separated from the n-base by a second planar pn-junction that very gradually approaches the upper side.