Abstract:
A method of reducing elevated intraocular pressure which comprises administering the compound of the formula (1): ##STR1## or a pharmaceutically acceptable salt thereof to patients suffering from abnormally elevated intraocular pressure is provided. A pharmaceutical formulation containing the compound of the formula (1) as an essential component is also provided.
Abstract:
Disclosed is a one-chip ULSI which can carry out fixed operations for a wide range of power supply voltages (1 V to 5.5 V). This one-chip ULSI is composed of a voltage converter circuit(s) which provides a fixed internal voltage for a wide range of power supply voltages, an input/output buffer which can be adapted to several input/out interface levels, a dynamic or volatile RAM(s) which can operate at a power supply voltage of 2 V or less, etc. This one-chip ULSI can be applied to compact and portable electronic devices such as a lap-top type personal computer, an electronic pocket note book, a solid-state camera, etc.
Abstract:
The present invention is intended to operate a semiconductor device at high speed with low voltage. A circuit configuration is used in which the transfer impedance between a common I/O line and a data line is changed depending on whether information is to be read or written. A current/voltage converter is provided which includes a MISFET different in conduction type to a select MISFET. Thus, the speed of reading information is increased. An intermediate voltage generator having high driving capability is provided. Thus, the circuit has sufficient driving capability for an LSI having large load capacitance. A voltage converter is provided which converts a data line supply voltage or word line supply voltage to a higher voltage. Therefore, stabilized signal transmission is ensured.
Abstract:
Practical structures of an ultra large scale semiconductor integrated (ULSI) circuit especially a dynamic random access memory of 16 M bits or more are involved. The ULSI circuit uses internal operating voltages and how to construct a reference voltage generating circuit and a voltage limiter circuit in the ULSI circuit is a matter of importance. The operation of the reference voltage generating circuit and voltage limiter circuit can be stabilized, characteristics of these circuits are improved, and layout of these circuits as applied to memory cell array, peripheral circuits and the like can be improved. Improved methods of testing these circuits are provided.
Abstract:
A control device of an automatic focusing lens which can be operated in an automatic focusing mode and a manual focusing mode. The control device is provided with a lens moving ring to which a lens and a clutch are connected. The clutch is selectively connected to a motor or a friction member. In the manual focusing mode, the clutch is connected to the friction member and disconnected from the motor. In the automatic focusing mode, the clutch is connected to the motor and disconnected from the friction member. The control device further includes a restricting mechanism by which a movement of the lens is restricted in the automatic focusing mode, and a switching mechanism by which the automatic focusing lens is switched to be operated in the automatic focusing mode or the manual focusing mode, and the restricting mechanism is activated. The switching mechanism is constructed as a single mechanism.
Abstract:
A fine-particle measuring apparatus designed to measure fine particles attached to the surface of a substrate for a semiconductor device set in a processing unit for formation of films, etching, cleaning, etc. and fine particles suspended in the space above the substrate surface by the use of scattering of a laser beam caused by these fine particles. The measuring apparatus comprises a laser beam scanning mechanism for irradiating a measuring space with a laser beam the angular position of which is minutely modulated at a predetermined frequency, a photodetector which receives light scattered by a fine particle and converts the received light into an electrical signal, and a signal processor which extracts from the electrical signal output by the photodetector a signal component whose frequency is the same as or double that of a modulating signal for the minute scanning with the laser beam and which has a constant phase difference in terms of time with respect to the modulating signal. Thus, it is possible to measure fine particles with high sensitivity without substantially disturbing the environment inside the process unit or the process itself.
Abstract:
A high strength copper alloy of excellent bending processability containing Ni: 5-20 wt %, Sn: 0.5-3 wt %, Al: 0.5-5 wt %, Mg: 0.001-0.05 wt %, Cr: 0.001-0.1 wt %, Zn: 0.05-5 wt %, the balance of Cu and inevitable impurities, and having a tensile strength of from 80 to 120 kgf/mm.sup.2. Up to 0.2 wt % of one or more of Fe,Mn,Ti,Zr,P,In,Ta and Co can be added without a deleterious effect. The alloy is non-toxic and economical, as well as shows tensile strength and elongation at least comparable with beryllium-copper alloy and has excellent solderability and solder-resistant and heat resistant peelability. The alloy can be used suitably as materials for electric terminals, connectors, etc.
Abstract:
A solid state image sensor in which the charge accumulation period of each picture element can be set at the same point of time. Additionally, the lenngth of the charge period can be set at will, thus providing a video signal picture in which all picture elements bear image information with the same time reference. Sensitivity of the solid state image senosr can be adjusted by setting the length of charge accumulation period. In the solid state image sensor, photodiodes are disposed as picture elements, and video signal is output in accordance with a charge which is light-generated within respective photodiodes. A series circuit of a switch and a capacitance element is connected in parallel with the photodiode. The switch is closed for at least the charge accumulation period during which charge is light-generated within the photodiode, and the video signal is obtained in accordance with level of charging of said capacitance element.
Abstract:
A numerically controlled machining system which stores in a memory, a machining program having machining pattern commands for specifying machining patterns, tool commands for specifying tools, and positional information commands for specifying positional information for the tools. A selecting device selects only the tool commands from the stored machining program, and displays parameters regarding the tools selected by the selecting device. The display can display a list of tools along with the parameters thereof so that the operator can locate the tools with utmost ease for tool preparation and attachment.
Abstract:
An improved reduction-reoxidation type semiconducting ceramic capacitor and the method for producing the same are disclosed. The main components of the substrate of the capacitor are CaTiO.sub.3, SrTiO.sub.3 and Bi.sub.2 O.sub.3 .multidot.xTiO.sub.2. Said substrate also contains at least one member selected from the group consisting of manganese, cobalt, nickel, chromium, vanadium, niobium, tantalum, lanthanum and cerium ions in total amounts of 0.025 to 0.4% by weight. The capacitor according to the present invention excels, in the temperature independency of the capacitance and tan .delta., etc.