Abstract:
A memory controller may receive a plurality of thermal profiles from a plurality of three-dimensional (3D)-stacked memory chips, where the plurality of thermal profiles include thermal profile data for the memory chips, where the thermal profile data includes a memory chip usage data and a location data for each of the memory chips, and where the memory chips include a first memory chip and a second memory chip. The memory controller may generate a first predicted memory chip usage data and location data by analyzing the usage data and location data of the thermal profile data. A second predicted memory chip usage data and location data may be generated. Based on the predicted memory chip, fractional memory chip read propensity data may be generated. The memory controller may distribute, according the first fractional memory chip read propensity distribution, memory chip read operations.
Abstract:
According to one aspect, a method for performance optimization of read functions in a memory system includes receiving, at the memory system, a read request including a logical address of a target data. The memory system includes a primary memory and a back-up memory that mirrors the primary memory. The method also includes searching a fault monitor table for an entry corresponding to the received logical address. The fault monitor table includes a plurality of entries that indicate physical locations of identified memory failure events in the primary memory and the back-up memory. Based on locating an entry corresponding to the received logical address, the method further includes selecting one of the primary memory and the backup memory for retrieving the target data. The selection is based on contents of the fault monitor table.
Abstract:
Exemplary embodiments of the present invention disclose a method and system for monitoring a first Error Correcting Code (ECC) device for failure and replacing the first ECC device with a second ECC device if the first ECC device begins to fail or fails. In a step, an exemplary embodiment performs a loopback test on an ECC device if a specified number of correctable errors is exceeded or if an uncorrectable error occurs. In another step, an exemplary embodiment replaces an ECC device that fails the loopback test with an ECC device that passes a loopback test.
Abstract:
The present disclosure includes a three dimensional (3D) integrated device comprising a first die having a first supply line and a second die having a second supply line, a power header, and voltage selection logic. The power header is connected to the first die and the second die and configured to generate a first voltage on a first voltage line and a second voltage on a second voltage line. The voltage selection logic is connected to the first supply line and the second supply line and configured to select between the first voltage line and the second voltage line for each of the first supply line and the second supply line.
Abstract:
A method for mirroring in three-dimensional-stacked memory includes receiving a plurality of thermal profiles from a plurality of memory chips. The method also includes ranking the plurality of memory chips in a first ranked list of memory chips as a function of the plurality of thermal profiles and forming a first group of memory chips from the plurality of memory chips based on the first ranked list of memory chips. The method also includes forming a second group of memory chips from the plurality of memory chips distinct from the first group of memory chips based on the first ranked list of memory chips. The method also includes pairing a first memory chip from the first group of memory chips and a second memory chip from the second group of memory chips, and mirroring the pairing of memory chips.
Abstract:
A method, system and memory controller are provided for implementing simultaneous read and write operations in a memory subsystem utilizing a dual port Dynamic Random Access Memory (DRAM) configuration. A DRAM includes a first partition and a second partition. A memory controller determines if memory requirements are above or below a usage threshold. If the memory requirements are below the usage threshold, the memory is partitioned into a read buffer and a write buffer, with writes going to the write buffer and reads coming from the read buffer, data being transferred from the write buffer to the read buffer through an Error Correction Code (ECC) engine. If the memory requirements are above the usage threshold, the entire memory is used for reads and writes.
Abstract:
Apparatus and methods are disclosed that enable the allocation of a cache portion of a memory buffer to be utilized by an on-cache function controller (OFC) to execute processing functions on “main line” data. A particular method may include receiving, at a memory buffer, a request from a memory controller for allocation of a cache portion of the memory buffer. The method may also include acquiring, by an on-cache function controller (OFC) of the memory buffer, the requested cache portion of the memory buffer. The method may further include executing, by the OFC, a processing function on data stored at the cache portion of the memory buffer.
Abstract:
A system for memory device control may include a stacked memory device and a memory controller. The stacked memory device may include a stack of chips connected to a package substrate by electrical interconnects. The stack may include a plurality of memory chips, a primary control chip, and a secondary control chip. The primary and secondary control chips may be electrically connected to the plurality of memory chips by an internal data bus. The primary control chip may have logic to provide an interface between the internal data bus and a first external data bus. The secondary control chip may have logic to provide an interface between the internal data bus and a second external data bus.
Abstract:
A method, system and memory controller are provided for implementing simultaneous read and write operations in a memory subsystem utilizing a dual port Dynamic Random Access Memory (DRAM) configuration. A DRAM includes a first partition and a second partition. A memory controller determines if memory requirements are above or below a usage threshold. If the memory requirements are below the usage threshold, the memory is partitioned into a read buffer and a write buffer, with writes going to the write buffer and reads coming from the read buffer, data being transferred from the write buffer to the read buffer through an Error Correction Code (ECC) engine. If the memory requirements are above the usage threshold, the entire memory is used for reads and writes.
Abstract:
A refresh command is received from a memory controller. An interruptible refresh containing multiple segment refreshes is initiated. The segment refreshes are separated by interrupt boundaries. A command is received before execution of a segment refresh. The first command is executed and execution of the first segment refresh is delayed at a first interrupt boundary. Alternatively, a first number of segment refreshes to execute is received from a memory controller. The received first number of segment refreshes is executed. A second number of segment refreshes to execute is received from a memory controller. The received second number of segment refreshes is executed. No segment refreshes are executed between the execution of the first number of segment refreshes and the execution of the second number of segment refreshes.