中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

122 records (took 0.021 seconds)

    VERTICAL HALL SENSOR CIRCUIT COMPRISING STRESS COMPENSATION CIRCUIT
    91.
    发明申请
    VERTICAL HALL SENSOR CIRCUIT COMPRISING STRESS COMPENSATION CIRCUIT 有权
    包含应力补偿电路的垂直霍尔传感器电路

    公开(公告)号：US20140306701A1

    公开(公告)日：2014-10-16

    申请号：US14275034

    申请日：2014-05-12

    Applicant: Infineon Technologies AG

    Inventor： Mario Motz ,  Udo Ausserlechner

    IPC: G01R33/00 ,  G01R33/07

    CPC classification number: G01R33/0029 ,  G01R33/0082 ,  G01R33/072 ,  G01R33/077 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A vertical Hall sensor circuit comprises an arrangement comprising a vertical Hall effect region of a first doping type, formed within a semiconductor substrate and having a stress dependency with respect to a Hall effect-related electrical characteristic. The vertical Hall sensor circuit further comprises a stress compensation circuit which comprises at least one of a lateral resistor arrangement and a vertical resistor arrangement. The lateral resistor arrangement has a first resistive element and a second resistive element, which are parallel to a surface of the semiconductor substrate and orthogonal to each other, for generating a stress-dependent lateral resistor arrangement signal on the basis of a reference signal inputted to the stress compensation circuit. The vertical resistor arrangement has a third resistive element of the first doping type for vertically conducting an electric current flow, for generating a stress-dependent vertical resistor arrangement signal on the basis of the reference signal. The vertical Hall sensor circuit further comprises a first circuit for providing a first signal to the arrangement, the first signal being based on at least one of the stress-dependent lateral resistor arrangement signal and the stress-dependent vertical resistor arrangement signal.

    Abstract translation: 垂直霍尔传感器电路包括一种包括形成在半导体衬底内并具有与霍尔效应相关的电气特性的应力依赖性的第一掺杂类型的垂直霍尔效应区域的布置。 垂直霍尔传感器电路还包括应力补偿电路，其包括横向电阻器布置和垂直电阻器布置中的至少一个。 所述横向电阻器装置具有第一电阻元件和第二电阻元件，所述第一电阻元件和第二电阻元件平行于所述半导体衬底的表面并且彼此正交，用于基于输入到所述半导体衬底的参考信号产生应力依赖性横向电阻器配置信号 应力补偿电路。 垂直电阻器布置具有第一掺杂类型的第三电阻元件，用于垂直传导电流，用于基于参考信号产生应力依赖垂直电阻器布置信号。 垂直霍尔传感器电路还包括用于向该布置提供第一信号的第一电路，第一信号基于应力依赖侧电阻器布置信号和应力依赖垂直电阻器布置信号中的至少一个。

    Accurate and Cost Efficient Linear Hall Sensor with Digital Output
    93.
    发明申请
    Accurate and Cost Efficient Linear Hall Sensor with Digital Output 有权
    具有数字输出功能的精确且经济高效的线性霍尔传感器

    公开(公告)号：US20140167990A1

    公开(公告)日：2014-06-19

    申请号：US14185961

    申请日：2014-02-21

    Applicant: Infineon Technologies AG

    Inventor： Mario Motz

    IPC: H03M1/06 ,  H03M1/12

    CPC classification number: H03M1/06 ,  G01R33/0029 ,  G01R33/072 ,  H03M1/0836 ,  H03M1/12 ,  H03M1/48

    Abstract: One embodiment of the present invention relates to a magnetic sensor circuit having a magnetic field sensor device configured to generate a digital signal proportional to an applied magnetic field. An analog-to-digital converter converts the analog signal to a digital signal that is provided to a digital signal processing unit, which is configured to digitally track the analog output signal. The digital tracking unit comprises a delay removal circuitry configured to generate a plurality of digital signal component corresponding to a chopping phase. A non-delayed offset compensated digital output signal may be generated within the chopping phase by mathematically operating upon (e.g., adding or subtracting) the plurality of digital signal components, generated by the delay removal circuitry.

    Abstract translation: 本发明的一个实施例涉及一种磁传感器电路，其具有被配置为产生与所施加的磁场成比例的数字信号的磁场传感器装置。 模数转换器将模拟信号转换为提供给数字信号处理单元的数字信号，数字信号处理单元被配置为数字跟踪模拟输出信号。 数字跟踪单元包括延迟去除电路，其经配置以产​​生对应于斩波相位的多个数字信号分量。 在延迟去除电路产生的多个数字信号分量（例如，增加或减去）之后，可以在斩波阶段内产生非延迟偏移补偿数字输出信号。

    Providing compensation parameters for sensor integrated circuits
    95.
    发明授权
    Providing compensation parameters for sensor integrated circuits 有权

    公开(公告)号：US12013259B2

    公开(公告)日：2024-06-18

    申请号：US16143171

    申请日：2018-09-26

    Applicant: Infineon Technologies AG

    Inventor： Benjamin Kollmitzer ,  Stephan Leisenheimer ,  Mario Motz ,  Bernhard Schaffer

    IPC: G01D3/02 ,  H04B1/04 ,  H04B1/16

    CPC classification number: G01D3/022 ,  H04B1/04 ,  H04B1/16

    Abstract: A device may determine a sensor identifier corresponding to a sensor integrated circuit (IC) associated with a sensor system. The device may provide the sensor identifier corresponding to the sensor IC. The device may receive, based on providing the sensor identifier, compensation parameter information associated with the sensor IC. The device may cause a set of compensation parameters, associated with the compensation parameter information, to be stored on a controller associated with the sensor system. The set of compensation parameters may include one or more parameters associated with correcting a measurement performed by the sensor IC or a safety result provided by the sensor IC.

    Bandgap reference circuit
    96.
    发明授权
    Bandgap reference circuit 有权

    公开(公告)号：US11846962B2

    公开(公告)日：2023-12-19

    申请号：US17740589

    申请日：2022-05-10

    Applicant: Infineon Technologies AG

    Inventor： Mario Motz ,  Francesco Polo

    IPC: H02M3/26 ,  G05F3/26 ,  H03F3/45 ,  G05F3/20 ,  G05F3/22

    CPC classification number: G05F3/267 ,  G05F3/20 ,  G05F3/22 ,  G05F3/26 ,  H03F3/45475

    Abstract: A bandgap reference circuit includes a bandgap reference core circuit that includes a first bipolar transistor having a first emitter current density and a first base-emitter voltage, a second bipolar transistor having a second emitter current density that is smaller than the first emitter current density and having a second base-emitter voltage, a resistor that is connected to the emitter of the second bipolar transistor, and a differential amplifier circuit that is configured to control first and second emitter currents through the first and second bipolar transistors, respectively, such that a sum of the second base-emitter voltage and a voltage drop across the resistor approximates the first base-emitter voltage. The bandgap reference circuit further includes a first replica bipolar transistor that emulates an operating point of the first bipolar transistor and a second replica bipolar transistor that emulates an operating point of the second bipolar transistor.

    Concept for compensating for a mechanical stress of a hall sensor circuit integrated into a semiconductor substrate
    100.
    发明授权
    Concept for compensating for a mechanical stress of a hall sensor circuit integrated into a semiconductor substrate 有权

    公开(公告)号：US10969444B2

    公开(公告)日：2021-04-06

    申请号：US16395644

    申请日：2019-04-26

    Applicant: Infineon Technologies AG

    Inventor： Mario Motz

    IPC: G01R33/00 ,  G01R33/07 ,  H01L43/14 ,  H01L43/06

    Abstract: The present disclosure describes a semiconductor circuit arrangement comprising a Hall sensor circuit integrated into a semiconductor substrate and configured to conduct a Hall supply current between a first terminal and a second terminal of a Hall effect region at an angle of 45° with respect to a normal to a primary flat plane of the semiconductor substrate laterally through the Hall effect region, wherein the Hall supply current has a first dependence on a mechanical stress of the semiconductor substrate. A resistance arrangement integrated into the semiconductor substrate, the resistance arrangement being different than the Hall effect region, is configured to conduct a current between a first terminal and a second terminal of the resistance arrangement, wherein the current through the resistance arrangement has a second dependence on the mechanical stress of the semiconductor substrate. A compensation circuit is configured to correct, on the basis of a signal difference between the first terminal of the Hall effect region and the first terminal of the resistance arrangement, a Hall voltage that is measured between a third and a fourth terminal of the Hall effect region and is dependent on the mechanical stress of the semiconductor substrate.

Patent Agency Ranking