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    Bis-o-amino(thio)phenols, and their preparation
    91.
    发明授权
    Bis-o-amino(thio)phenols, and their preparation 有权
    双 - 氨基（硫代）酚类及其制备方法

    公开(公告)号：US6150558A

    公开(公告)日：2000-11-21

    申请号：US161144

    申请日：1998-09-24

    Applicant: Recai Sezi ,  Michael Keitmann

    Inventor： Recai Sezi ,  Michael Keitmann

    IPC: C07D247/00 ,  C07C201/12 ,  C07C205/38 ,  C07C213/02 ,  C07C217/90 ,  C07D239/52 ,  C07D255/02 ,  C07D257/12 ,  C07D487/04 ,  G03F7/023

    CPC classification number: C07C217/90 ,  C07D239/52 ,  G03F7/0233

    Abstract: The invention relates to novel bis-o-aminophenols, and bis-o-aminothiophenols of the following structure: ##STR1## where A.sup.1 to A.sup.6 are--independently of one another--H, F, CH.sub.3, CF.sub.3, OCH.sub.3, OCF.sub.3, CH.sub.2 CH.sub.3, CF.sub.2 CF.sub.3, OCH.sub.2 CH.sub.3 or OCF.sub.2 CF.sub.3, where at least one of the radicals A.sup.1 to A.sup.6 must be F or an F-containing group; T is O or S, and m is 0 or 1; and Z is a carbocyclic or heterocyclic aromatic radical.

    Abstract translation: 本发明涉及以下结构的新的双邻氨基苯酚和双-O-氨基噻吩：其中A1至A6彼此独立地为-H，F，CH3，CF3，OCH3，OCF3，CH2CH3，CF2CF3，OCH2CH3 或OCF 2 CF 3，其中基团A1至A6中的至少一个必须为F或含F的基团; T为O或S，m为0或1; Z是碳环或杂环芳族基团。

    O-amino (thio) phenolcarboxylic acids and their preparation
    94.
    发明授权
    O-amino (thio) phenolcarboxylic acids and their preparation 有权
    O-氨基（硫代）苯酚羧酸及其制备方法

    公开(公告)号：US05998662A

    公开(公告)日：1999-12-07

    申请号：US160875

    申请日：1998-09-25

    Applicant: Recai Sezi ,  Michael Keitmann

    Inventor： Recai Sezi ,  Michael Keitmann

    IPC: C07C213/04 ,  C07B61/00 ,  C07C217/90 ,  C07D213/64 ,  C07D213/643 ,  C07D213/68 ,  C07C229/00

    CPC classification number: C07D213/643 ,  C07C217/90 ,  C07D213/68

    Abstract: The invention relates to novel o-aminophenolcarboxylic acids, and o-aminothiophenolcarboxylic acids of the following structure: ##STR1## where A.sup.1 to A.sup.7 are--independently of one another--H, F, CH.sub.3, CF.sub.3, OCH.sub.3, OCF.sub.3, CH.sub.2 CH.sub.3, CF.sub.2 CF.sub.3, OCH.sub.2 CH.sub.3 or OCF.sub.2 CF.sub.3, where at least one of the radicals A.sup.1 to A.sup.3 must be F or an F-containing group; T is O or S, and m is 0 or 1; and Z is a carbocyclic or heterocyclic aromatic radical.

    Abstract translation: 本发明涉及以下结构的新型邻氨基苯酚羧酸和邻氨基苯硫酚羧酸：其中A1至A7彼此独立地为-H，F，CH3，CF3，OCH3，OCF3，CH2CH3，CF2CF3，OCH2CH3或OCF2CF3 其中基团A1至A3中的至少一个必须为F或含F的基团; T为O或S，m为0或1; Z是碳环或杂环芳族基团。

    Photolithographic pattern generation
    96.
    发明授权
    Photolithographic pattern generation 失效
    光刻图案生成

    公开(公告)号：US5863705A

    公开(公告)日：1999-01-26

    申请号：US793546

    申请日：1997-02-21

    Applicant: Recai Sezi ,  Rainer Leuschner ,  Erwin Schmidt

    Inventor： Recai Sezi ,  Rainer Leuschner ,  Erwin Schmidt

    IPC: G03F7/004 ,  G03F7/022 ,  G03F7/023 ,  G03F7/033 ,  G03F7/039 ,  G03F7/26 ,  G03F7/38 ,  H01L21/027 ,  G03C5/00

    CPC classification number: G03F7/022 ,  G03F7/0233 ,  Y10S430/12

    Abstract: The invention concerns a photolithographic method of producing sub-micron structural features by applying to a substrate a photosensitive resist layer consisting of a polymer containing tert-butyl ester or tert-butoxycarbonyloxy groups, a photosensitive component (in the form of an ester of naphthoquinonediazide-4-sulfonic acid and an aromatic hydroxy compound) and a suitable solvent. The photoresist is then dried, exposed in an imaging manner, subjected to a temperature treatment in the range between 120.degree. and 150.degree. C. for a period of 100 to 600 seconds, and wet-developed (single-layer resist system). The invention also concerns a method in which a corresponding two-layer resist system is used.

    Abstract translation: PCT No.PCT / DE95 / 01187 Sec。 371日期1997年2月21日 102（e）日期1997年2月21日PCT 1995年9月1日PCT PCT。 公开号WO96 / 08751 日期1996年3月21日本发明涉及通过将由含有叔丁基酯或叔丁氧羰基氧基的聚合物组成的光敏抗蚀剂层，光敏组分（以 萘醌二叠氮-4-磺酸和芳族羟基化合物的酯）和合适的溶剂。 然后将光致抗蚀剂干燥，以成像方式曝光，在120〜150℃的温度下进行100〜600秒的湿度处理和湿式显影（单层抗蚀剂体系）。 本发明还涉及使用相应的双层抗蚀剂体系的方法。

    Connection and build-up technique for multichip modules
    98.
    发明授权
    Connection and build-up technique for multichip modules 失效
    多芯片模块的连接和建立技术

    公开(公告)号：US5556812A

    公开(公告)日：1996-09-17

    申请号：US495246

    申请日：1995-06-27

    Applicant: Rainer Leuschner ,  Hellmut Ahne ,  Siegfried Birkle ,  Albert Hammerschmidt ,  Recai Sezi ,  Tobias Noll ,  Ann Dumoulin

    Inventor： Rainer Leuschner ,  Hellmut Ahne ,  Siegfried Birkle ,  Albert Hammerschmidt ,  Recai Sezi ,  Tobias Noll ,  Ann Dumoulin

    IPC: G03F7/075 ,  C23C14/20 ,  G03F7/26 ,  H01L21/48 ,  H05K3/00 ,  H05K3/02 ,  H05K3/04 ,  H05K3/10 ,  H05K3/18 ,  H05K3/38 ,  H05K3/46 ,  H01L21/60

    CPC classification number: H01L21/4846 ,  H01L21/4857 ,  H05K3/465 ,  H01L2924/0002 ,  H05K2203/072 ,  H05K3/0023 ,  H05K3/0041 ,  H05K3/048 ,  H05K3/184 ,  H05K3/388 ,  H05K3/4661

    Abstract: A method for manufacturing multichip modules having layer sequences made of dielectric material with conducting tracks embedded therein is characterized by the following features: (1) a temperature-resistant, base-resistant polymer having a dielectric constant .ltoreq.3 is used as a dielectric material, which is applied to a non-conductive substrate and serves as an edge boundary for currentless, autocatalytic build-up of the conducting tracks; (2) the dielectric material is provided with a layer made of material which is soluble in organic solvents (lift-off layer); (3) the dielectric material and the lift-off layer are structured in a single lithographic step, either a direct or an indirect structuring taking place and grooves having an aspect ratio .gtoreq.1 being formed in the dielectric material; (4) a metallic seed layer is applied to the dielectric material or rather to the lift-off layer through vapor deposition in a directed manner; (5) the lift-off layer is removed using an organic solvent; and (6) conducting tracks are created in the grooves through currentless metal deposition.

    Abstract translation: 制造具有由介电材料制成的具有导电轨迹的层序列的多芯片模块的方法的特征在于具有以下特征：（1）具有介电常数<3的耐温耐碱聚合物用作电介质 材料，其被施加到非导电衬底并且用作导电轨道的无电流，自动催化积聚的边界; （2）介电材料设有可溶于有机溶剂（剥离层）的材料制成的层; （3）电介质材料和剥离层在单个光刻步骤中构成，直接或间接构造发生，并且在电介质材料中形成具有纵横比大于等于1的沟槽; （4）通过气相沉积以有向的方式将金属种子层施加到电介质材料上或者相对于剥离层; （5）使用有机溶剂除去剥离层; 并且通过无电流金属沉积在凹槽中产生（6）导电轨迹。

    Method of dry development utilizing quinone diazide and basic polymer resist with latent image intensification through treatment with silicon-organic compound in water
    99.
    发明授权
    Method of dry development utilizing quinone diazide and basic polymer resist with latent image intensification through treatment with silicon-organic compound in water 失效
    使用醌二叠氮化物和通过在水中用硅有机化合物处理的潜像增强的碱性聚合物抗蚀剂的干式显影方法

    公开(公告)号：US5275920A

    公开(公告)日：1994-01-04

    申请号：US762071

    申请日：1991-09-18

    Applicant: Recai Sezi ,  Rainer Leuschner ,  Michael Sebald ,  Siegfried Birkle ,  Hellmut Ahne

    Inventor： Recai Sezi ,  Rainer Leuschner ,  Michael Sebald ,  Siegfried Birkle ,  Hellmut Ahne

    IPC: G03F7/26 ,  G03F7/36

    CPC classification number: G03F7/265

    Abstract: A finely structurable resist system for a dry development process is provided. A latent image is produced in a light-sensitive layer by imaging exposure and is intensified by treatment with, for example, an organosilicon compound. The etching resistance to an oxygen plasma is simultaneously increased. The light-sensitive layer preferably comprises anhydride or epoxy groups that are suitable for reaction with the functional groups of the organosilicon compounds. A silylizing treatment can be implemented with a solution or emulsion in a simple apparatus or can be implemented in the vapor phase.

    Abstract translation: 提供了用于干式显影方法的可精细结构的抗蚀剂体系。 通过成像曝光在感光层中产生潜像，并且通过用例如有机硅化合物处理来增强潜像。 对氧等离子体的耐蚀刻性同时增加。 感光层优选包含适于与有机硅化合物的官能团反应的酸酐或环氧基团。 甲硅烷化处理可以在简单的装置中用溶液或乳液实施，或者可以在气相中实施。

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