公开(公告)号：US20200313177A1

公开(公告)日：2020-10-01

申请号：US16900108

申请日：2020-06-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yohei MOMMA ,  Takahiro KAWAKAMI ,  Teruaki OCHIAI ,  Masahiro TAKAHASHI

IPC: H01M4/46 ,  H01M4/1391 ,  H01M4/62 ,  H01M4/36 ,  H01M4/131 ,  H01M10/0525

Abstract: Provided is a positive electrode active material for a lithium ion secondary battery having favorable cycle characteristics and high capacity. A covering layer containing aluminum and a covering layer containing magnesium are provided on a superficial portion of the positive electrode active material. The covering layer containing magnesium exists in a region closer to a particle surface than the covering layer containing aluminum is. The covering layer containing aluminum can be formed by a sol-gel method using an aluminum alkoxide. The covering layer containing magnesium can be formed as follows: magnesium and fluorine are mixed as a starting material and then subjected to heating after the sol-gel step, so that magnesium is segregated.

公开(公告)号：US20200259019A1

公开(公告)日：2020-08-13

申请号：US16864364

申请日：2020-05-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro TAKAHASHI ,  Kengo AKIMOTO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/24 ,  H01L27/12 ,  H01L21/02 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1343 ,  C01G15/00 ,  H01L29/04

Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1-δO3(ZnO)m (0

公开(公告)号：US20200176770A1

公开(公告)日：2020-06-04

申请号：US16624319

申请日：2018-06-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro TAKAHASHI ,  Mayumi MIKAMI ,  Yohei MOMMA ,  Teruaki OCHIAI ,  Jyo SAITOU

IPC: H01M4/525 ,  C01G51/00 ,  C01G53/00 ,  H01M10/0525

Abstract: A positive electrode active material has a small difference in a crystal structure between the charged state and the discharged state. For example, the crystal structure and volume of the positive electrode active material, which has a layered rock-salt crystal structure in the discharged state and a pseudo-spinel crystal structure in the charged state at a high voltage of approximately 4.6 V, are less likely to be changed by charging and discharging as compared with those of a known positive electrode active material. In order to form the positive electrode active material having the pseudo-spinel crystal structure in the charged state, it is preferable that a halogen source such as a fluorine and a magnesium source be mixed with particles of a composite oxide containing lithium, a transition metal, and oxygen, which is synthesized in advance, and then the mixture be heated at an appropriate temperature for an appropriate time.

公开(公告)号：US20190051755A1

公开(公告)日：2019-02-14

申请号：US16163917

申请日：2018-10-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Tatsuya HONDA ,  Takehisa HATANO

IPC: H01L29/786 ,  H01L29/24

Abstract: Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly reliable semiconductor device. In the transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating layer, and a gate electrode layer are stacked in that order. As the semiconductor layer, an oxide semiconductor layer which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and has a composition ratio (atomic percentage) of indium as twice or more as a composition ratio of gallium and a composition ratio of zinc, is used.

公开(公告)号：US20180323220A1

公开(公告)日：2018-11-08

申请号：US16024997

申请日：2018-07-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Masashi TSUBUKU ,  Noritaka ISHIHARA ,  Masashi OOTA

IPC: H01L27/12 ,  H01L29/24 ,  G02F1/1368 ,  H01L29/04 ,  H01L29/786 ,  H01L21/66 ,  G01N23/207 ,  H01L29/66

CPC classification number: H01L27/1225 ,  C23C14/086 ,  G01N23/207 ,  G02F1/1368 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L22/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

公开(公告)号：US20180175207A1

公开(公告)日：2018-06-21

申请号：US15891677

申请日：2018-02-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro TAKAHASHI ,  Kengo AKIMOTO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  C01G15/00 ,  G02F1/1343 ,  G02F1/1362 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  C01G15/006 ,  C01P2006/40 ,  G02F1/134309 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2201/123 ,  H01L21/02565 ,  H01L21/02609 ,  H01L27/1225 ,  H01L27/1285 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1−δO3(ZnO)m (0

公开(公告)号：US20180013130A1

公开(公告)日：2018-01-11

申请号：US15638449

申请日：2017-06-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Teruaki OCHIAI ,  Takahiro KAWAKAMI ,  Mayumi MIKAMI ,  Yohei MOMMA ,  Masahiro TAKAHASHI ,  Ayae TSURUTA

IPC: H01M4/131 ,  H01M4/86 ,  H01M10/0525

Abstract: A positive electrode active material which can improve cycle characteristics of a secondary battery is provided. Two kinds of regions are provided in a superficial portion of a positive electrode active material such as lithium cobaltate which has a layered rock-salt crystal structure. The inner region is a non-stoichiometric compound containing a transition metal such as titanium, and the outer region is a compound of representative elements such as magnesium oxide. The two kinds of regions each have a rock-salt crystal structure. The inner layered rock-salt crystal structure and the two kinds of regions in the superficial portion are topotaxy; thus, a change of the crystal structure of the positive electrode active material generated by charging and discharging can be effectively suppressed. In addition, since the outer coating layer in contact with an electrolyte solution is the compound of representative elements which is chemically stable, the secondary battery having excellent cycle characteristics can be obtained.

公开(公告)号：US20170373135A1

公开(公告)日：2017-12-28

申请号：US15687061

申请日：2017-08-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Masashi TSUBUKU ,  Masashi OOTA

IPC: H01L29/04 ,  H01L29/24 ,  H01L29/26 ,  H01L29/786

CPC classification number: H01L29/04 ,  H01L29/045 ,  H01L29/24 ,  H01L29/247 ,  H01L29/26 ,  H01L29/7869 ,  H01L29/78693

Abstract: A highly reliable semiconductor device including, an oxide semiconductor is provided. Provided is a semiconductor device including an oxide semiconductor layer, an insulating layer in contact with the oxide semiconductor layer, a gate electrode layer overlapping with the oxide semiconductor layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first region having a crystal whose size is less than or equal to 10 nm and a second region which overlaps with the insulating layer with the first region provided therebetween and which includes a crystal part whose c-axis is aligned in a direction parallel to a normal vector of the surface of the oxide semiconductor layer.

公开(公告)号：US20170162719A1

公开(公告)日：2017-06-08

申请号：US15440427

申请日：2017-02-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Akiharu MIYANAGA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Junichiro SAKATA

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/477 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/02554 ,  G02F1/1368 ,  G02F1/167 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02266 ,  H01L21/02422 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. The impurity concentration in the oxide semiconductor layer is reduced in the following manner: a silicon oxide layer including many defects typified by dangling bonds is formed in contact with the oxide semiconductor layer, and an impurity such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O) included in the oxide semiconductor layer is diffused into the silicon oxide layer. Further, a mixed region is provided between the oxide semiconductor layer and the silicon oxide layer. The mixed region includes oxygen, silicon, and at least one kind of metal element that is included in the oxide semiconductor.

公开(公告)号：US20170040458A1

公开(公告)日：2017-02-09

申请号：US15242802

申请日：2016-08-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akiharu MIYANAGA ,  Junichiro SAKATA ,  Masayuki SAKAKURA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/423 ,  H01L27/12 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/78618

Abstract: An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.

Abstract translation: 目的是提供一种具有良好电特性的薄膜晶体管和包括薄膜晶体管作为开关元件的半导体器件。 薄膜晶体管包括形成在绝缘表面上的栅极电极，栅电极上的栅极绝缘膜，与栅极绝缘膜上的栅电极重叠的氧化物半导体膜，并且包括其中浓度为1或 包含在氧化物半导体中的多种金属高于其他区域，形成在氧化物半导体膜上并与该层接触的一对金属氧化物膜，以及与金属氧化物膜接触的源电极和漏电极 。 金属氧化物膜通过氧化源电极和漏电极中所含的金属而形成。