Memristive device
    91.
    发明授权
    Memristive device 有权
    忆阻器

    公开(公告)号:US08547727B2

    公开(公告)日:2013-10-01

    申请号:US13119932

    申请日:2008-12-12

    IPC分类号: G11C11/00

    摘要: A memristive routing device includes a memristive matrix, mobile dopants moving with the memristive matrix in response to programming electrical fields and remaining stable within the memristive matrix in the absence of the programming electrical fields; and at least three electrodes surrounding the memristive matrix. A method for tuning electrical circuits with a memristive device includes measuring a circuit characteristic and applying a programming voltage to the memristive device which causes motion of dopants within the memristive device to alter the circuit characteristic. A method for increasing a switching speed of a memristive device includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions and then switching the memristive device to a conductive state by applying a programming voltage which rapidly merges the two conductive regions to form a conductive pathway between a source electrode and a drain electrode.

    摘要翻译: 忆阻路由设备包括忆阻矩阵,响应于编程电场而与忆阻矩阵一起移动的移动掺杂物,并且在没有编程电场的情况下在忆阻矩阵内保持稳定; 以及围绕忆阻矩阵的至少三个电极。 一种用忆阻器件调谐电路的方法包括测量电路特性并将编程电压施加到忆阻器件,其使得忆阻器件内的掺杂剂的运动改变电路特性。 用于增加忆阻器件的切换速度的方法包括将来自两个几何分离位置的掺杂剂绘制成紧密接近形成两个导电区域,然后通过施加快速合并两个导电区域的编程电压将忆阻器件切换到导通状态 在源电极和漏电极之间形成导电路径。

    Solar cell employing a nanowire
    94.
    发明授权
    Solar cell employing a nanowire 有权
    采用纳米线的太阳能电池

    公开(公告)号:US08390086B2

    公开(公告)日:2013-03-05

    申请号:US12815590

    申请日:2010-07-19

    IPC分类号: H01L31/042

    摘要: One embodiment in accordance with the invention is a solar cell comprising a non-single crystal substrate; a nanowire grown from a surface of the non-single crystal substrate; and an electrode coupled to the nanowire, wherein the nanowire is electrically conductive and is for absorbing electromagnetic wave and generating a current.

    摘要翻译: 根据本发明的一个实施例是包括非单晶衬底的太阳能电池; 从非单晶衬底的表面生长的纳米线; 以及耦合到所述纳米线的电极,其中所述纳米线是导电的并且用于吸收电磁波并产生电流。

    Apparatus and method for nanowire optical emission
    95.
    发明授权
    Apparatus and method for nanowire optical emission 失效
    纳米线光发射装置及方法

    公开(公告)号:US08390005B2

    公开(公告)日:2013-03-05

    申请号:US12243105

    申请日:2008-10-01

    IPC分类号: H01L33/00

    摘要: An optical emitter includes at least one nanowire connected in a circuit such that current selectively flows into the nanowire. The nanowire has a length-to-diameter ratio of ten or less. A method for generating optical emission includes applying a voltage across a nanowire to inject charge carriers into the nanowire, the nanowire having a length-to-diameter ratio of ten or less; and confining the charge carriers within the nanowire by placing a high bandgap material at each end of the nanowire, wherein the charge carriers recombine to emit optical energy.

    摘要翻译: 光发射器包括在电路中连接的至少一个纳米线,使得电流选择性地流入纳米线。 纳米线的长径比为10以下。 一种用于产生光发射的方法包括在纳米线上施加电压以将电荷载流子注入到纳米线中,纳米线的长径比为10或更小; 并且通过在纳米线的每个端部放置高带隙材料来限制纳米线内的电荷载流子,其中电荷载流子复合以发射光能。

    Memristors with Asymmetric Electrodes
    98.
    发明申请
    Memristors with Asymmetric Electrodes 有权
    具有不对称电极的忆阻器

    公开(公告)号:US20120132880A1

    公开(公告)日:2012-05-31

    申请号:US13322291

    申请日:2009-07-28

    IPC分类号: H01L45/00

    摘要: Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device (100) comprises an active region (102), a first electrode (104) disposed on a first surface of the active region, and a second electrode (106) disposed on a second surface of the active region, the second surface opposite the first surface. The first electrode is configured with a larger width than the active region in a first direction, and the second electrode is configured with a larger width than the active region in a second direction. Application of a voltage to at least one of the electrodes produces an electric field across a sub-region (108) within the active region between the first electrode and the second electrode.

    摘要翻译: 本发明的实施例涉及提供非易失性忆阻转换的纳米级忆阻器装置。 在一个实施例中,忆阻器装置(100)包括有源区(102),设置在有源区的第一表面上的第一电极(104)和设置在有源区的第二表面上的第二电极 ,与第一表面相对的第二表面。 第一电极被构造成在第一方向上具有比有效区域更大的宽度,并且第二电极被配置为在第二方向上具有比有效区域更大的宽度。 向至少一个电极施加电压产生穿过第一电极和第二电极之间的有源区域内的子区域(108)的电场。

    LUMINESCENT CHEMICAL SENSOR INTEGRATED WITH AT LEAST ONE MOLECULAR TRAP
    99.
    发明申请
    LUMINESCENT CHEMICAL SENSOR INTEGRATED WITH AT LEAST ONE MOLECULAR TRAP 有权
    LUMINESCENT化学传感器与最少的一个分子轨迹集成

    公开(公告)号:US20120107948A1

    公开(公告)日:2012-05-03

    申请号:US12916299

    申请日:2010-10-29

    摘要: A luminescent chemical sensor integrated with at least one molecular trap. The luminescent chemical sensor includes at least one molecular trap and at least one metallic-nanofinger device integrated with at least one molecular trap. The molecular trap includes a plurality of electrodes that trap at least one analyte molecule. The metallic-nanofinger device includes a substrate, and a plurality of nanofingers coupled with the substrate. A nanofinger of the plurality includes a flexible column, and a metallic cap coupled to an apex of the flexible column. At least the nanofinger and a second nanofinger of the plurality of nanofingers are to self-arrange into a close-packed configuration with the analyte molecule. A method for using, and a chemical-analysis apparatus including the luminescent chemical sensor are also provided.

    摘要翻译: 与至少一个分子阱集成的发光化学传感器。 发光化学传感器包括至少一个分子阱和至少一个与至少一个分子陷阱集成的金属纳米酮装置。 分子阱包括捕获至少一种分析物分子的多个电极。 金属纳米装置包括衬底和与衬底耦合的多个纳米器件。 多个纳米针板包括柔性柱和联接到柔性柱的顶点的金属帽。 至少纳米角蛋白和多个纳米针的第二纳米梳理器将自分配成与分析物分子紧密堆积的构型。 还提供了使用方法和包括发光化学传感器的化学分析装置。