公开(公告)号：US20190206431A1

公开(公告)日：2019-07-04

申请号：US16222009

申请日：2018-12-17

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: G11B5/39

Abstract: A magnetoresistance effect element has a structure in which a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer are subsequently laminated and outer circumferential portions of the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer are covered with a first insulating film which contains silicon nitride as a main component and has boron nitride or aluminum nitride further added thereto.

公开(公告)号：US20190189909A1

公开(公告)日：2019-06-20

申请号：US16271112

申请日：2019-02-08

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA ,  Atsushi TSUMITA

IPC: H01L43/04 ,  H01L43/14 ,  H01L43/10 ,  H01L43/08 ,  G11C11/16 ,  G11C11/18

CPC classification number: H01L43/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14

Abstract: A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element; a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.

公开(公告)号：US20190157343A1

公开(公告)日：2019-05-23

申请号：US15780080

申请日：2017-09-13

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetization rotational element includes a single crystalline substrate, a magnetization stabilizing layer, a first ferromagnetic metal layer, and a joint layer in that order and at least the single crystalline substrate, the magnetization stabilizing layer, and the first ferromagnetic metal layer are single-crystallized.

公开(公告)号：US20190148627A1

公开(公告)日：2019-05-16

申请号：US16218953

申请日：2018-12-13

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: H01L43/08 ,  H01F10/32 ,  G01R33/09 ,  H01L29/82 ,  H01L27/105 ,  H01L43/10 ,  H01F10/26 ,  H01F10/16 ,  H01F10/14 ,  G11B5/39

CPC classification number: H01L43/08 ,  G01R33/09 ,  G01R33/098 ,  G11B5/39 ,  H01F10/14 ,  H01F10/16 ,  H01F10/26 ,  H01F10/32 ,  H01F10/324 ,  H01L27/105 ,  H01L29/82 ,  H01L43/10

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a composition formula of AB2Ox (0

公开(公告)号：US20190108865A1

公开(公告)日：2019-04-11

申请号：US16120960

申请日：2018-09-04

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA ,  Jiro YOSHINARI

IPC: G11C11/14 ,  G11C11/16 ,  H01L43/08 ,  H01L43/12 ,  G01R33/09

Abstract: A magnetoresistance effect element has a structure in which a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer are subsequently laminated and outer circumferential portions of the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer are covered with a first insulating film which contains silicon nitride as a main component and contains further boron nitride or aluminum nitride.

公开(公告)号：US20190088395A1

公开(公告)日：2019-03-21

申请号：US16116547

申请日：2018-08-29

Applicant: TDK CORPORATION

Inventor： Minoru OTA ,  Tomoyuki SASAKI ,  Hirokazu TAKAHASHI

IPC: H01F10/32 ,  H01L43/08 ,  H01F10/12 ,  G11C11/16 ,  G11C11/18

Abstract: The present disclosure is directed to a spin current magnetization rotational element, a spin-orbit-torque magnetoresistance effect element, a magnetic memory, and a high-frequency magnetic element which can efficiently generate a pure spin current and reduce a reversal current density. The spin current magnetization rotational element includes: a spin-orbit torque wiring extending in a first direction; and a first ferromagnetic layer laminated in a second direction which intersects the first direction, wherein the spin-orbit torque wiring includes at least one rare gas element of Ar, Kr, and Xe.

公开(公告)号：US20190051816A1

公开(公告)日：2019-02-14

申请号：US16077570

申请日：2017-11-14

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Tomoyuki SASAKI ,  Tohru OIKAWA

IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  G11C11/16 ,  H01F10/32

Abstract: A spin current magnetization rotational element includes: a first ferromagnetic metal layer having a variable magnetization direction; and a spin orbital torque wiring which is joined to the first ferromagnetic metal layer and extends in a direction crossing a direction perpendicular to a plane of the first ferromagnetic metal layer, wherein the spin orbital torque wiring is constituted of a non-magnetic material composed of elements of two or more kinds and a compositional proportion of the non-magnetic material has a non-uniform distribution between a first surface joined to the first ferromagnetic metal layer and a second surface located on a side opposite to the first surface.

公开(公告)号：US20190035446A1

公开(公告)日：2019-01-31

申请号：US16079436

申请日：2017-06-09

Applicant: TDK CORPORATION

Inventor： Tatsuo SHIBATA ,  Tomoyuki SASAKI

IPC: G11C11/15 ,  G11C11/16 ,  H01L21/8239 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

Abstract: An exchange bias utilization type magnetization rotational element includes an anti-ferromagnetic driving layer which is made of first region and second region anti-ferromagnetisms, and a third region anti-ferromagnetism positioned between the first and second regions, a magnetic coupling layer anti-ferromagnetism which is magnetically coupled to the anti-ferromagnetic driving layer anti-ferromagnetism in the third region anti-ferromagnetism, a first electrode layer anti-ferromagnetism which is bonded to the first region anti-ferromagnetism; and a second electrode layer anti-ferromagnetism which is bonded to the second region anti-ferromagnetism.

公开(公告)号：US20180123028A1

公开(公告)日：2018-05-03

申请号：US15793523

申请日：2017-10-25

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Tomoyuki SASAKI ,  Tohru OIKAWA

IPC: H01L43/08 ,  H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  H01F10/32

CPC classification number: H01L43/08 ,  H01F10/324 ,  H01L43/04 ,  H01L43/06 ,  H01L43/10

Abstract: A spin-orbit torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of which is configured to be changed; a spin-orbit torque wiring bonded to the ferromagnetic metal layer; and an interfacial distortion supply layer bonded to a surface of the spin-orbit torque wiring on a side opposite to the ferromagnetic metal layer.

公开(公告)号：US20180108834A1

公开(公告)日：2018-04-19

申请号：US15556435

申请日：2016-03-28

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: H01L43/08 ,  G01R33/09 ,  H01L43/10 ,  H01F10/32

CPC classification number: H01L43/08 ,  G01R33/09 ,  G11B5/39 ,  G11C11/161 ,  H01F10/16 ,  H01F10/30 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/105 ,  H01L29/82 ,  H01L43/10

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer has a spinel structure in which cations are arranged in a disordered manner, and the tunnel barrier layer is expressed by a composition formula of (M1-xZnx)((T1)2-y(T2)y)O4 wherein M represents a non-magnetic divalent cation other than Zn, each of T1 and T2 represents a non-magnetic trivalent cation, and x and y represent a composition ratio in a region where composition ratios combined as follows ((1) to (5)) are vertexes, and the vertexes are connected by straight lines: (1) x=0.2, y=0.1, (2) x=0.8, y=0.1, (3) x=0.8, y=1.7, (4) x=0.6, y=1.7, and (5) x=0.2, y=0.7.