摘要:
A lithography process for forming a pattern having different sizes or different shapes of pattern components, comprises steps of exposing a resist to a predetermined light pattern by modified illumination, and removing, at least one step of forming the resist pattern, a region of the resist by employing a lithography-developing solution containing a surfactant, the surfactant being capable of promoting dissolution of a smaller pattern component to be removed of the resist.The surfactant is represented by the general formula below:HO(CH.sub.2 CH.sub.2 O).sub.a (CH(CH.sub.3)CH.sub.2 O).sub.b (CH.sub.2 CH.sub.2 O).sub.c Hwhere a, b, and c are respectively an integer.The surfactant satisfies the relation:(A+C)/(A+B+C).ltoreq.0.3where A represents the molecular weight of HO(CH.sub.2 CH.sub.2 O).sub.a, B represents the molecular weight of (CH(CH.sub.3)CH.sub.2 O).sub.b, and C represents the molecular weight of (CH.sub.2 CH.sub.2 O).sub.c H.
摘要:
A projection exposure apparatus includes a projection optical system for projecting a pattern of a mask onto a substrate. The projection optical system includes a pair of aspherical members, at least one of which is displaceable in a direction orthogonal to an optical axis of the projection optical system. The aspherical members have aspherical surface shapes which are determined so that an optical characteristic of the aspherical members as a unit changes with a change in positional relationship between the aspherical surfaces of the aspherical members with respect to the orthogonal direction. Also, an optical characteristic of the projection optical system is adjustable in response to displacement of the at least one of the aspherical members in the direction orthogonal to the optical axis.
摘要:
An edge emphasis type phase shift reticle is illuminated obliquely, and zeroth order diffraction light and first order diffraction light caused by a fine pattern of the reticle and having substantially the same intensity are incident and distributed on a pupil of a projection optical system, symmetrically with respect to a predetermined axis, whereby the fine pattern is imaged with use of the zeroth order diffraction light and first order diffraction light.
摘要:
A method of imaging a fine pattern having a group of lines extending along orthogonal first and second directions and a group of lines extending along a third direction different from the first and second directions includes illuminating the pattern obliquely, to form an image of the line pattern. Illumination beams along the first, second and third directions, respectively, each has an intensity sufficiently lowered as compared with that of a particular illumination beam along a particular direction different from the first, second and third directions.
摘要:
An illumination device includes a radiation source; an optical integrator having an array of lenses disposed along a plane perpendicular to an optical axis of the device; a first optical system for amplitude-dividing a coherent beam from the radiation source and producing plural beams which are substantially incoherent with each other, the first optical system also being effective to project the beams to the optical integrator in different directions and to superpose the beams upon one another on the optical integrator; and a second optical system for directing beams from the lenses of the optical integrator to a surface to be illuminated and for superposing the beams upon one another on the surface to be illuminated.
摘要:
A semiconductor device manufacturing exposure method for exposing different portions of a semiconductor wafer with radiation in a step-and-repeat manner includes the steps of: placing the wafer on a wafer chuck; detecting a first mark of the wafer, whereby a wafer mark signal is produced; controlling a rotational position of the wafer chuck on the basis of the wafer mark signal; printing an image of a second mark of a mask on a portion of a photosensitive material layer provided on a portion of the wafer chuck outside the wafer; photoelectrically detecting the image of the second mark of the mask printed on the photosensitive layer, whereby a mask mark signal is produced; producing data necessary for control of movement of the wafer chuck through a stage, by using the mask mark signal; effecting step-and-repeat exposure of the different portions of the wafer by using a radiation beam while controlling the movement of the wafer chuck through the stage on the basis of the produced data; and blocking a portion of the radiation beam with use of a blocking member disposed between a source of the radiation beam and the wafer to prevent exposure of the photosensitive material layer during the step-and-repeat exposure.
摘要:
A mark detecting device usable in an alignment and exposure apparatus for aligning an alignment mark of a mask with an alignment mark of a wafer and for exposing a resist layer provided on the surface of the wafer to a pattern of the mask with radiation. The device including a portion for forming a photoprint of the alignment mark of the mask on the resist layer provided on the surface of the wafer, a portion for removing at least a portion of the resist layer adjacent to the alignment mark of the wafer, and a portion for detecting the alignment mark of the wafer and the photoprint of the alignment mark of the mask.
摘要:
An illumination device includes a raidation source; an optical integrator having an array of lenses disposed along a plane perpendicular to an optical axis of the device; a first optical system for amplitude-dividing a coherent beam from the radiation source and producing plural beams which are substantially incoherent with each other, the first optical system also being effective to project the beams to the optical integrator in different directions and to superpose the beams upon one another on the optical integrator; and a second optical system for directing beams from the lenses of the optical integrator to a surface to be illuminated and for superposing the beams upon one another on the surface to be illuminated.
摘要:
A mark detecting device usable in an alignment and exposure apparatus for aligning an alignment mark of a mask with an alignment mark of a wafer and for exposing a resist layer provided on the surface of the wafer to a pattern of the mask with radiation. The device includes a system for detecting light from the wafer, the detecting system including a photodetecting device for detecting light and a wavelength selecting element disposed in a path of light from the wafer to the photodetecting device so as to allow introduction of light of a predetermined wavelength into the light path from outside the light path to illuminate the wafer, and a portion for forming a photoprint of the alignment mark of the mask in the resist layer provided on the surface of the wafer, the photoprint forming portion being arranged, for the formation of the photoprint, to direct, to the wafer, the light of the predetermined wavelength from the outside of the light path and by way of the mask and the wavelength selecting element, wherein the photodetecting device is effective to detect the light from the wafer to detect the alignment mark of the wafer and the photoprint of the alignment mark of the mask.
摘要:
An observation device for use in observation of a first object and a second object onto which a pattern of the first object is to be projected, the observation device includes a light source; a polarization beam splitter provided between the light source and the first object, for receiving light from the light source and for directing the same to the first and second objects; a first phase converting element provided between the first and second objects, for changing the state of polarization of the light from the light source as incident on the first phase converting element; and a second phase converting element provided to be disposed or to be selectively disposed between the first object and the polarization beam splitter, for changing the state of polarization of reflection light from the first object as incident on the second phase converting element; wherein the first and second objects can be observed by detecting, through the polarization beam splitter, reflection light reflected by the second object ane passing through the first object or by detecting the reflection light and reflection light from the first object.