公开(公告)号：US08471366B2

公开(公告)日：2013-06-25

申请号：US13307396

申请日：2011-11-30

申请人： Hidenori Mikami ,  Naoki Matsumoto ,  Hideki Osada ,  Yusuke Yoshizumi ,  Sayuri Yamaguchi

发明人： Hidenori Mikami ,  Naoki Matsumoto ,  Hideki Osada ,  Yusuke Yoshizumi ,  Sayuri Yamaguchi

IPC分类号： H01L29/05

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/7787 ,  H01L29/808 ,  H01L29/812 ,  H01S5/2201 ,  H01S5/34333 ,  H01S2301/176

摘要： A nitride semiconductor device includes a main surface and an indicator portion. The main surface is a plane inclined by at least 71° and at most 79° in a [1-100] direction from a (0001) plane or a plane inclined by at least 71° and at most 79° in a [−1100] direction from a (000-1) plane. The indicator portion indicates a (−1017) plane, a (10-1-7) plane, or a plane inclined by at least −4° and at most 4° in the [1-100] direction from these planes and inclined by at least −0.5° and at most 0.5° in a direction orthogonal to the [1-100] direction.

摘要翻译： 氮化物半导体器件包括主表面和指示器部分。 主表面是在[0001]面或[-1100]中倾斜至少71°和最多79°的平面的[1-100]方向上倾斜至少71°和至多79°的平面 ]方向从（000-1）平面。 指示器部分表示（-1017）面，（10-1-7）面，或在这些平面沿[1-100]方向倾斜至少-4°至最多4°的平面，并且倾斜于 在与[1-100]方向正交的方向上至少为-0.5°且至多0.5°。

公开(公告)号：US08771552B2

公开(公告)日：2014-07-08

申请号：US12837872

申请日：2010-07-16

申请人： Keiji Ishibashi ,  Yusuke Yoshizumi

发明人： Keiji Ishibashi ,  Yusuke Yoshizumi

IPC分类号： H01B1/00

CPC分类号： C30B23/025 ,  C30B29/403 ,  C30B33/00 ,  H01L29/2003

摘要： A group III nitride crystal substrate is provided in which a uniform distortion at a surface layer of the crystal substrate represented by a value of |d1 −d2 |/d2 obtained from a plane spacing d1 at the X-ray penetration depth of 0.3 μm and a plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 1.9 ×10−3, and the main surface has a plane orientation inclined in the direction at an angle equal to or greater than 10° and equal to or smaller than 80° with respect to one of (0001) and (000-1) planes of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.

摘要翻译： 提供了一种III族氮化物晶体基板，其中在由X射线穿透深度为0.3μm的平面间距d1获得的| d1 -d2 | / d2的值表示的晶体基板的表面层处的均匀的变形，以及 在5μm的X射线穿透深度处的平面间距d2等于或小于1.9×10 -3，并且主表面具有以等于或大于等于或等于10°的角度在<10-10>方向上倾斜的平面取向 相对于晶体基板的（0001）和（000-1）面之一，比10°等于或小于80°。 因此，可以提供适合于制造抑制发射蓝移的发光器件的III族氮化物晶体衬底，含有外延层的III族氮化物晶体衬底，半导体器件及其制造方法。

公开(公告)号：US20130134434A1

公开(公告)日：2013-05-30

申请号：US13307396

申请日：2011-11-30

申请人： Hidenori Mikami ,  Naoki Matsumoto ,  Hideki Osada ,  Yusuke Yoshizumi ,  Sayuri Yamaguchi

发明人： Hidenori Mikami ,  Naoki Matsumoto ,  Hideki Osada ,  Yusuke Yoshizumi ,  Sayuri Yamaguchi

IPC分类号： H01L29/15

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/7787 ,  H01L29/808 ,  H01L29/812 ,  H01S5/2201 ,  H01S5/34333 ,  H01S2301/176

摘要： A nitride semiconductor device includes a main surface and an indicator portion. The main surface is a plane inclined by at least 71° and at most 79° in a [1-100] direction from a (0001) plane or a plane inclined by at least 71° and at most 79° in a [−1100] direction from a (000-1) plane. The indicator portion indicates a (−1017) plane, a (10-1-7) plane, or a plane inclined by at least −4° and at most 4° in the [1-100] direction from these planes and inclined by at least −0.5° and at most 0.5° in a direction orthogonal to the [1-100] direction.

摘要翻译： 氮化物半导体器件包括主表面和指示器部分。 主表面是在[0001]面或[-1100]中倾斜至少71°和最多79°的平面的[1-100]方向上倾斜至少71°和至多79°的平面 ]方向从（000-1）平面。 指示器部分表示（-1017）面，（10-1-7）面，或在这些平面沿[1-100]方向倾斜至少-4°至最多4°的平面，并且倾斜于 在与[1-100]方向正交的方向上至少为-0.5°且至多0.5°。

公开(公告)号：US20120267606A1

公开(公告)日：2012-10-25

申请号：US13526061

申请日：2012-06-18

申请人： Keiji ISHIBASHI ,  Yusuke Yoshizumi ,  Shugo Minobe

发明人： Keiji ISHIBASHI ,  Yusuke Yoshizumi ,  Shugo Minobe

IPC分类号： H01L33/06 ,  C30B29/40 ,  H01L29/04 ,  C30B25/18 ,  H01L33/18 ,  H01L21/20 ,  C01B21/06 ,  C30B23/02

CPC分类号： C30B33/00 ,  C30B21/02 ,  C30B29/403 ,  Y10T428/21 ,  Y10T428/24355

摘要： A group III nitride crystal substrate is provided, wherein, a uniform distortion at a surface layer of the crystal substrate is equal to or lower than 1.7×10−3, and wherein a plane orientation of the main surface has an inclination angle equal to or greater than −10° and equal to or smaller than 10° in a [0001] direction with respect to a plane including a c axis of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.

摘要翻译： 提供了一种III族氮化物晶体基板，其中，在晶体基板的表面层上的均匀的畸变等于或小于1.7×10 -3，并且其中主表面的平面取向具有等于或等于 相对于包含晶体基板的ac轴的平面，在[0001]方向上大于-10°且等于或小于10°。 因此，可以提供适合于制造抑制发射蓝移的发光器件的III族氮化物晶体衬底，含有外延层的III族氮化物晶体衬底，半导体器件及其制造方法。

公开(公告)号：US20080128706A1

公开(公告)日：2008-06-05

申请号：US11947752

申请日：2007-11-29

申请人： Shinsuke Fujiwara ,  Takashi Sakurada ,  Makoto Kiyama ,  Yusuke Yoshizumi

发明人： Shinsuke Fujiwara ,  Takashi Sakurada ,  Makoto Kiyama ,  Yusuke Yoshizumi

IPC分类号： H01L29/20 ,  H01L21/205

CPC分类号： H01L29/2003 ,  C30B25/02 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： Method of high-yield manufacturing superior semiconductor devices includes: a step of preparing a GaN substrate having a ratio St/S—of collective area (St cm2) of inversion domains in, to total area (S cm2) of the principal face of, the GaN substrate—of no more than 0.5, with the density along the (0001) Ga face, being the substrate principal face, of inversion domains whose surface area where the polarity in the [0001] direction is inverted with respect to the principal domain (matrix) is 1 μm2 or more being D cm−2; and a step of growing on the GaN substrate principal face an at least single-lamina semiconductor layer to form semiconductor devices in which the product Sc×D of the area Sc of the device principal faces, and the density D of the inversion domains is made less than 2.3.

摘要翻译： 高产量制造方法优异的半导体器件包括：制备具有集体面积的比率S / T / S的GaN衬底的步骤， （0001）的浓度，在GaN基板的主面的总面积（S cm 2以上）不大于0.5的情况下， 在[0001]方向上的极性相对于主域（矩阵）反转的表面积为反向畴的Ga面作为衬底主面为1μm以上为D cm 2; 并且在GaN衬底主体上生长至少单层半导体层以形成半导体器件的步骤，其中产品S区域S D的区域S < 器件主面，反型域的密度D小于2.3。

公开(公告)号：US09708735B2

公开(公告)日：2017-07-18

申请号：US13526061

申请日：2012-06-18

申请人： Keiji Ishibashi ,  Yusuke Yoshizumi ,  Shugo Minobe

发明人： Keiji Ishibashi ,  Yusuke Yoshizumi ,  Shugo Minobe

IPC分类号： C30B29/54 ,  C30B33/00 ,  C30B29/40

CPC分类号： C30B33/00 ,  C30B21/02 ,  C30B29/403 ,  Y10T428/21 ,  Y10T428/24355

摘要： A group III nitride crystal substrate is provided, wherein, a uniform distortion at a surface layer of the crystal substrate is equal to or lower than 1.7×10−3, and wherein a plane orientation of the main surface has an inclination angle equal to or greater than −10° and equal to or smaller than 10° in a [0001] direction with respect to a plane including a c axis of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.

公开(公告)号：US20120223417A1

公开(公告)日：2012-09-06

申请号：US13469576

申请日：2012-05-11

申请人： Keiji Ishibashi ,  Yusuke Yoshizumi

发明人： Keiji Ishibashi ,  Yusuke Yoshizumi

IPC分类号： H01L29/20 ,  B32B5/16 ,  H01L21/66 ,  C01B21/06

CPC分类号： C30B33/00 ,  C09K3/1436 ,  C09K3/1463 ,  C30B29/403 ,  H01L21/02024 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/0254 ,  H01L33/16 ,  Y10T428/2982

摘要： A group III nitride crystal substrate is provided wherein, a uniform distortion at a surface layer of the crystal substrate is equal to or lower than 1.9×10−3, and wherein the main surface has a plane orientation inclined in a direction at an angle equal to or greater than 10° and equal to or smaller than 81° with respect to one of (0001) and (000-1) planes of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.

摘要翻译： 提供了一种III族氮化物晶体基板，其中，在晶体基板的表面层处的均匀的变形为1.9×10 -3以下，其中，所述主表面具有倾斜< 方向相对于晶体基板的（0001）和（000-1）面之一以等于或大于10°且等于或小于81°的角度。 因此，可以提供适合于制造抑制发射蓝移的发光器件的III族氮化物晶体衬底，含有外延层的III族氮化物晶体衬底，半导体器件及其制造方法。

公开(公告)号：US20110012233A1

公开(公告)日：2011-01-20

申请号：US12837872

申请日：2010-07-16

申请人： Keiji ISHIBASHI ,  Yusuke Yoshizumi

发明人： Keiji ISHIBASHI ,  Yusuke Yoshizumi

IPC分类号： H01L29/20 ,  C30B19/12 ,  C30B23/02

CPC分类号： C30B23/025 ,  C30B29/403 ,  C30B33/00 ,  H01L29/2003

摘要： A group III nitride crystal substrate is provided in which, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the group III nitride crystal substrate obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a main surface of the crystal substrate while X-ray diffraction conditions of the specific parallel crystal lattice planes of the crystal substrate are satisfied, a uniform distortion at a surface layer of the crystal substrate represented by a value of |d1−d2|/d2 obtained from a plane spacing d1 at the X-ray penetration depth of 0.3 μm and a plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 1.9×10−3, and the main surface has a plane orientation inclined in the direction at an angle equal to or greater than 10° and equal to or smaller than 80° with respect to one of (0001) and (000-1) planes of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.

摘要翻译： 提供了一种III族氮化物晶体基板，其中，与通过从主表面的X射线穿透深度的变化进行的X射线衍射测量获得的III族氮化物晶体基板的任意特定平行晶格面的平面间隔 的晶体基板的特定平行晶格面的X射线衍射条件得到满足的结晶基板的表面层的均匀失真，由从 在X射线穿透深度为0.3μm的平面间隔d1和在5μm的X射线穿透深度处的平面间距d2等于或小于1.9×10 -3，并且主表面具有倾斜的平面取向 相对于晶体基板的（0001）和（000-1）面之一等于或大于10°且等于或小于80°的角度的<10-10>方向。 因此，可以提供适合于制造抑制发射蓝移的发光器件的III族氮化物晶体衬底，含有外延层的III族氮化物晶体衬底，半导体器件及其制造方法。

公开(公告)号：US08476086B2

公开(公告)日：2013-07-02

申请号：US11947752

申请日：2007-11-29

申请人： Shinsuke Fujiwara ,  Takashi Sakurada ,  Makoto Kiyama ,  Yusuke Yoshizumi

发明人： Shinsuke Fujiwara ,  Takashi Sakurada ,  Makoto Kiyama ,  Yusuke Yoshizumi

IPC分类号： H01L33/00

CPC分类号： H01L29/2003 ,  C30B25/02 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： Method of high-yield manufacturing superior semiconductor devices includes: a step of preparing a GaN substrate having a ratio St/S—of collective area (St cm2) of inversion domains in, to total area (S cm2) of the principal face of, the GaN substrate—of no more than 0.5, with the density along the (0001) Ga face, being the substrate principal face, of inversion domains whose surface area where the polarity in the [0001] direction is inverted with respect to the principal domain (matrix) is 1 μm2 or more being D cm−2; and a step of growing on the GaN substrate principal face an at least single-lamina semiconductor layer to form semiconductor devices in which the product Sc×D of the area Sc of the device principal faces, and the density D of the inversion domains is made less than 2.3.

摘要翻译： 高产率制造方法优异的半导体器件包括：制备具有反向畴的总面积（St cm2）的St / S-与主面的总面积（S cm2）的GaN衬底的步骤， 所述GaN衬底的不大于0.5，其中沿[0001]方向的极性的表面积相对于所述主结构域反转的反转畴的（0001）Ga面的密度（作为衬底主面） （矩阵）为1mum2以上为Dcm-2; 并且在GaN衬底主体上生长至少单层半导体层以形成半导体器件的步骤，其中器件主要面积Sc的乘积Sc×D面向反射区域的密度D 小于2.3。