摘要:
A spectrum measuring apparatus that includes an extinction member for decreasing a light intensity from an EUV light source, a spectrum member for extracting light with a desired wavelength band from the decreased intensity light and a detector for detecting a light intensity of the light with a desired wavelength band is disclosed. Then, a spectrum intensity distribution (spectrum) is obtained by (a) a plural opening is located in the extinction member, and the light from the EUV light source passes through the plural opening at the same time, or (b) the detector detects the light volume of the light with a desired wavelength band as thermal energy.
摘要:
An insulation film 150 made of SiO2 is formed on a p-type layer 106, and a multiple thick film positive electrode 120, which is a metal film formed through metal deposition, is formed on the insulation film 150 and on the p-type layer 106 at the central portion of which has a window and is exposed. The insulation film 150 has a thickness of one fourth multiple of emission wavelength. Thickness of the insulation film 150 is generally determined by multiplying one fourth of intramedium emission wavelength by an odd number. By interference effect, directivity of radiated light along the optical axis direction can be improved.
摘要:
A group III nitride compound semiconductor device is produced according to the following manner. A separation layer made of a material which prevents group III nitride compound semiconductors from being grown thereon is formed on a substrate. Group III nitride compound semiconductors is grown on a surface of the substrate uncovered with the separation layer while keeping the uncovered substrate surface separated by the separation layer.
摘要:
A first group III nitride compound layer, which is formed on a substrate by a method not using metal organic compounds as raw materials, is heated in an atmosphere of a mixture gas containing a hydrogen or nitrogen gas and an ammonia gas, so that the crystallinity of a second group III nitride compound semiconductor layer formed on the first group III nitride compound layer is improved. When the first group III nitride compound layer is formed on a substrate by a sputtering method, the thickness of the first group III nitride compound layer is set to be in a range of from 50 Å to 3000 Å.
摘要:
In a group III nitride compound semiconductor light-emitting device, a light-emitting layer having a portion where an InGaN layer is interposed between AlGaN layers on both sides thereof is employed. By controlling the thickness, growth rate and growth temperature of InGaN layer which is a well layer and the thickness of AlGaN layer which is a barrier layer so that they are optimized, the output of the light-emitting device is enhanced.
摘要:
The present invention provides an ink, an ink set, and a recording method with which the light fastness is good and good characteristics such as color, fire resistance, moisture resistance, clogging resistance, and storage stability can be achieved, which is accomplished by using a magenta ink including at least a first dye and a second dye, the first dye having a structure expressed by the General Formula I, the second dye being one or more types of dye selected from among dyes having a structure expressed by the following General Formula II and/or C.I. Acid Violet 9 and 30 and C.I. Acid Red 50, 52, and 289, and the weight ratio of first dye to second dye being 5:1 to 1:5.
摘要:
This invention relates to an arrangement for detecting the driven state of a vibration wave actuator apparatus and provides an apparatus in which a waveform signal having an amplitude corresponding to a vibration state is generated by a monitor circuit, and this waveform signal is level-detected by a comparing circuit having a predetermined threshold so as to form a signal having a pulse width corresponding to the amplitude of the waveform signal, thereby detecting a vibration state from the pulse width.
摘要:
A GaN type semiconductor layer having a new structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.
摘要:
An ink set is provided which can realize images having excellent lightfastness and color reproduction. The ink set comprises magenta ink compositions, the magenta ink compositions containing specific compounds as colorants.