公开(公告)号：US20060022697A1

公开(公告)日：2006-02-02

申请号：US11167147

申请日：2005-06-28

申请人： Chin-Chen Chuan ,  Chiu-Cheng Lin ,  Cheng Lee ,  Kuei Huang ,  Yong Chen ,  Jui Wang ,  Pao Chien ,  Hsiang-Han Kung ,  Chao Hwu

发明人： Chin-Chen Chuan ,  Chiu-Cheng Lin ,  Cheng Lee ,  Kuei Huang ,  Yong Chen ,  Jui Wang ,  Pao Chien ,  Hsiang-Han Kung ,  Chao Hwu

IPC分类号： G01R31/26

CPC分类号： G01R31/2893

摘要： A method for re-testing semiconductor device includes following processes: (1) providing a first carrier for accommodating semiconductor devices which have been tested; (2) taking the semiconductor devices out from the first carrier and placing them according to the information of a fist map by a pick-and-place machine, wherein the information of the first map has the coordinates of the positions of the film frame where the semiconductor is to be placed; (3) placing the film frame with the semiconductor devices placed thereon to a testing machine, and re-testing the semiconductor devices according to the information of the first map by the tester; (4) placing the film frame with the semiconductor devices attached thereon to a pick-and-place machine, and taking the semiconductor devices out according to the result of the retesting from the film frame, and placing the semiconductor devices on at least one carriers.

公开(公告)号：US20060012079A1

公开(公告)日：2006-01-19

申请号：US10893082

申请日：2004-07-16

申请人： Gun-Young Jung ,  Yong Chen ,  R. Williams ,  Sivapackia Ganapathiappan

发明人： Gun-Young Jung ,  Yong Chen ,  R. Williams ,  Sivapackia Ganapathiappan

IPC分类号： B28B7/36 ,  B29C33/58

CPC分类号： G03F7/0002 ,  B29C33/58 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00

摘要： A method is provided for coating a surface having features thereon with a self-assembled monolayer for aiding release of the surface during an imprinting procedure. The method comprises exposing the surface to a vapor of a mold release agent.

摘要翻译： 提供了一种用于在其上具有特征的表面用自组装单层涂覆以便在印刷过程期间帮助释放表面的方法。 该方法包括将表面暴露于脱模剂的蒸气。

公开(公告)号：US20060003265A1

公开(公告)日：2006-01-05

申请号：US10881150

申请日：2004-06-30

申请人： Sean Zhang ,  Yong Chen

发明人： Sean Zhang ,  Yong Chen

IPC分类号： G03C5/00

CPC分类号： H01L51/0595 ,  B05D1/202 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  H01L27/285 ,  H01L51/0075 ,  Y10T428/26 ,  Y10T428/31504 ,  Y10T428/31938

摘要： A molecular layer includes a Langmuir-Blodgett (LB) film of a molecule connected to a plurality of active device molecules, the molecule having a moiety with first and second connecting groups at opposed ends of the moiety. Each of the plurality of active device molecules includes a switching moiety, a self-assembling connecting group at one end of the switching moiety, and a linking group at an opposed end of the moiety. One or more defect site(s) exist between the plurality of active device molecules. A respective number of the first connecting groups of the LB film are connected to the plurality of active device molecules via at least some of the linking groups such that the LB film covers the plurality of active device molecules and the one or more defect site(s).

摘要翻译： 分子层包括连接到多个活性器件分子的分子的Langmuir-Blodgett（LB）膜，该分子具有在该部分的相对端具有第一和第二连接基团的部分。 多个有源器件分子中的每一个包括切换部分，在开关部分的一端的自组装连接基团和该部分的相对端的连接基团。 在多个有源器件分子之间存在一个或多个缺陷位点。 LB膜的相应数量的第一连接基团经由至少一些连接基团连接到多个有源器件分子，使得LB膜覆盖多个有源器件分子和一个或多个缺陷部位 ）。

公开(公告)号：US20050194526A1

公开(公告)日：2005-09-08

申请号：US10792961

申请日：2004-03-02

申请人： Zhang-Lin Zhou ,  Yong Chen ,  Xiao-An

发明人： Zhang-Lin Zhou ,  Yong Chen ,  Xiao-An

IPC分类号： B05D1/20 ,  B05D3/06 ,  G11C13/02 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H01S1/00

CPC分类号： G11C13/0009 ,  B05D1/204 ,  B05D3/061 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G11C13/0014 ,  G11C2213/14 ,  G11C2213/77 ,  G11C2213/81 ,  H01L51/0075 ,  H01L51/0595

摘要： Langmuir-Blodgett films are provided in which a molecule is chemically bonded with a bottom electrode substrate as part of a crossed wire device comprising two electrodes and a molecular layer therebetween. The molecule, which comprises a switchable moiety and a connecting moiety, is provided with a photolabile capping group attached to the connecting moiety. The photolabile capping group temporarily caps the reactive connecting group of the molecule. The capped molecules are processed to form a LB film on the water-air interface of water. The films are then exposed to UV light. The photolabile capping group decomposes to give back the connecting group, which remains in the water. As the uncapped LB films are transferred to a bottom electrode substrate, the surface of the electrode reacts with the reactive connecting group of the molecule to form a chemically bonded LB layer on the substrate, thereby providing improved LB films.

摘要翻译： 提供Langmuir-Blodgett膜，其中分子与底部电极基底化学键合，作为包括两个电极和其间的分子层的交叉线器件的一部分。 包含可切换部分和连接部分的分子具有连接到连接部分上的光不透明封端基团。 光敏封端组暂时封闭分子的反应性连接基团。 加热封端的分子在水的水 - 空气界面上形成LB膜。 然后将膜暴露于UV光。 光不稳定封盖组分解，使回流在水中的连接组。 由于未封装的LB膜转移到底部电极基板，电极的表面与分子的反应性连接基团反应，以在基板上形成化学键合的LB层，从而提供改进的LB膜。

公开(公告)号：US20050162881A1

公开(公告)日：2005-07-28

申请号：US10765799

申请日：2004-01-27

申请人： James Stasiak ,  Kevin Peters ,  Jennifer Wu ,  Pavel Kornilovich ,  Yong Chen

发明人： James Stasiak ,  Kevin Peters ,  Jennifer Wu ,  Pavel Kornilovich ,  Yong Chen

IPC分类号： H01L21/027 ,  G03F7/00 ,  H01L21/329 ,  H01L21/8229 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/102 ,  H01L27/105 ,  H01L27/24 ,  H01L27/28 ,  H01L51/05 ,  G11C5/06

CPC分类号： B82Y10/00 ,  H01L27/1021 ,  H01L27/24 ,  Y10S977/887 ,  Y10S977/94

摘要： A memory device including a substrate, and multiple self-alignednano-rectifying elements disposed over the substrate. Each nano-rectifying element has multiple first electrode lines, and multiple device structures disposed on the multiple first electrode lines forming the multiple self-aligned nano-rectifying elements. Each device structure has at least one lateral dimension less than about 75 nanometers. The memory device also includes multiple switching elements disposed over the device structures and self-aligned in at least one direction with the device structures. In addition, the memory device includes multiple second electrode lines disposed over, electrically coupled to, and self-aligned to the switching elements, whereby a memory device is formed.

摘要翻译： 一种存储器件，包括衬底和设置在衬底上的多个自对准纳米整流元件。 每个纳米整流元件具有多个第一电极线，并且多个器件结构设置在形成多个自对准纳米整流元件的多个第一电极线上。 每个器件结构具有小于约75纳米的至少一个横向尺寸。 存储器件还包括设置在器件结构上的多个开关元件，并且在至少一个方向上与器件结构自对准。 此外，存储器件包括多个第二电极线，其布置在开关元件上方，电耦合并自对准，从而形成存储器件。

公开(公告)号：US06918045B2

公开(公告)日：2005-07-12

申请号：US10058588

申请日：2002-01-28

申请人： Yong Chen ,  Thomas Shu

发明人： Yong Chen ,  Thomas Shu

IPC分类号： G06F1/32 ,  G06F15/177

CPC分类号： G06F1/3246 ,  G06F1/3203

摘要： A power management mode selection system includes a video controller and a switching circuit. The switching circuit is configured to receive an input signal associated with an operating system processable by the system and provide a first power signal or a second power signal to the video controller in response to the input signal.

摘要翻译： 电源管理模式选择系统包括视频控制器和开关电路。 开关电路被配置为接收与可由系统处理的操作系统相关联的输入信号，并且响应于输入信号向视频控制器提供第一功率信号或第二功率信号。

公开(公告)号：US20050091624A1

公开(公告)日：2005-04-28

申请号：US10693150

申请日：2003-10-23

申请人： Richard Baugh ,  Yong Chen

发明人： Richard Baugh ,  Yong Chen

IPC分类号： G06F17/50 ,  H03K19/02

CPC分类号： H03K19/02 ,  Y10S977/94

摘要： Various nanoscale logic gates are disclosed. An alternating current (“AC”) source is superimposed on a direct-current (“DC”), largely resistor-based nanoscale logic circuit in order to provide distinguishable, AC current or voltage logical output signals despite potentially narrow DC-voltage or DC-current ranges produced by the resistor-based nanoscale logic circuit. AC-enhanced AND, OR, NAND, and NOR nanoscale logic gates are provided as four specific embodiments of the present invention.

摘要翻译： 公开了各种纳米级逻辑门。 交流（“AC”）源叠加在直流（“DC”）上，基本上是基于电阻的纳米尺度逻辑电路，以便提供可区分的交流电流或电压逻辑输出信号，尽管潜在的直流电压或直流 - 由电阻器型纳米尺度逻辑电路产生的电流范围。 AC增强型AND，OR，NAND和NOR纳米级逻辑门作为本发明的四个具体实施例提供。

公开(公告)号：US20050040417A1

公开(公告)日：2005-02-24

申请号：US10917751

申请日：2004-08-12

申请人： Zhiyong Li ,  Yong Chen ,  Sean Zhang

发明人： Zhiyong Li ,  Yong Chen ,  Sean Zhang

IPC分类号： B82B1/00 ,  H01L29/22 ,  H01L31/0352 ,  H01L51/00 ,  H01L51/30

CPC分类号： H01L51/42 ,  H01L51/005 ,  H01L51/0071 ,  H01L51/0077 ,  H01L51/428 ,  Y02E10/549 ,  Y10S977/954

摘要： An optical sensor is provided, comprising (a) a silicon nanowire of finite length having an electrical contact pad at each end thereof; and (b) a plurality of self-assembled molecules on a surface of the silicon nanowire, the molecules serving to modulate electrical conductivity of the silicon nanowire by either a reversible change in dipole moment of the molecules or by a reversible molecule-assisted electron/energy transfer from the molecules onto the silicon nanowire. Further, a method of making the optical sensor is provided. The concept of molecular self-assembly is applied in attaching functional molecules onto silicon nanowire surfaces, and the requirement of molecule modification (hydroxy group in molecules) is minimal from the point view of synthetic difficulty and compatibility. Self-assembly will produce well-ordered ultra-thin films with strong chemical bonding on a surface that cannot be easily achieved by other conventional methods.

摘要翻译： 提供了一种光学传感器，其包括（a）有限长度的硅纳米线，其每端具有电接触焊盘; 和（b）在硅纳米线的表面上的多个自组装分子，所述分子用于通过分子的偶极矩的可逆变化或通过可逆分子辅助电子/分子调制硅纳米线的导电性， 能量从分子转移到硅纳米线上。 此外，提供了制造光学传感器的方法。 分子自组装的概念应用于将功能分子附着在硅纳米线表面上，从合成难度和相容性的观点来看，分子修饰（分子中的羟基）的要求是最小的。 自组装将产生在表面上具有强化学键合的良好有序的超薄膜，其不能通过其它常规方法实现。

公开(公告)号：US20050037916A1

公开(公告)日：2005-02-17

申请号：US10642371

申请日：2003-08-15

申请人： Yong Chen ,  David Hacklernan ,  Laurie Mittchstadt ,  Yoocham Jeon ,  Richad Williams

发明人： Yong Chen ,  David Hacklernan ,  Laurie Mittchstadt ,  Yoocham Jeon ,  Richad Williams

IPC分类号： B29C33/42 ,  C25B9/10 ,  H01B1/12 ,  H01M4/04 ,  H01M4/36 ,  H01M4/38 ,  H01M4/60 ,  H01M4/86 ,  H01M4/88 ,  H01M10/04 ,  B05D5/12 ,  B29C33/40 ,  H01M8/10

CPC分类号： H01B1/122 ,  B29C33/42 ,  B29L2031/756 ,  B82Y30/00 ,  C25B9/10 ,  H01M4/366 ,  H01M4/38 ,  H01M4/602 ,  H01M4/8657 ,  H01M4/8807 ,  H01M4/8817 ,  H01M4/9041 ,  H01M8/1286 ,  H01M10/0472 ,  H01M2300/0082 ,  Y10S977/887 ,  Y10S977/89

摘要： A method and mold for creating nanoscale patterns in an ion-selective polymer membrane is provided, in which a mold comprising a substrate and a molding layer having at least one protruding feature is imprinted on the ion-selective polymer membrane, thereby creating a recessed feature in the membrane. Protruding features having nanoscale dimensions can be created, e.g., by using self-assembled nanostructures as a shadow mask for etching a molding layer. In one embodiment, an imprinted ion selective polymer membrane, suitable for use as a solid electrolyte, is adapted for use in an electrochemical device or fuel cell by adding a metal catalyst to one portion of the membrane to serve as a catalytic electrode.

摘要翻译： 提供了一种用于在离子选择性聚合物膜中产生纳米尺度图案的方法和模具，其中将包含基底的模具和具有至少一个突出特征的模制层压印在离子选择性聚合物膜上，从而形成凹陷特征 在膜中。 可以例如通过使用自组装纳米结构作为用于蚀刻成型层的荫罩来产生具有纳米级尺寸的突出特征。 在一个实施方案中，适合用作固体电解质的印迹离子选择性聚合物膜适用于电化学装置或燃料电池中，通过向膜的一部分添加金属催化剂以用作催化电极。

公开(公告)号：US06542400B2

公开(公告)日：2003-04-01

申请号：US09819402

申请日：2001-03-27

申请人： Yong Chen ,  Robert G. Walmsley

发明人： Yong Chen ,  Robert G. Walmsley

IPC分类号： G11C1100

CPC分类号： G11B9/149 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1454 ,  G11B9/1472 ,  Y10S977/742 ,  Y10S977/874 ,  Y10S977/875 ,  Y10S977/943 ,  Y10S977/947

摘要： A molecular memory system that includes a protective layer that is disposed over a molecular recording layer is described. The protective layer enables a scanning probe to write information to and read information from a molecular memory element by direct electrical contact without substantial risk of damage to either the scanning probe or the molecular recording medium. In this way, the invention avoids the high emission currents, which may damage the probe electrode or the recording media, or both, and avoids other difficulties often associated molecular memory systems with non-contacting probe electrodes.