公开(公告)号：US20060097306A1

公开(公告)日：2006-05-11

申请号：US11249393

申请日：2005-10-14

申请人： Won-joo Kim ,  Yoon-dong Park ,  Eun-hong Lee ,  Sun-ae Seo ,  Sang-min Shin ,  Jung-hoon Lee ,  Seung-hyuk Chang

发明人： Won-joo Kim ,  Yoon-dong Park ,  Eun-hong Lee ,  Sun-ae Seo ,  Sang-min Shin ,  Jung-hoon Lee ,  Seung-hyuk Chang

IPC分类号： H01L29/76 ,  H01L21/336

CPC分类号： G11C11/5621 ,  B82Y10/00 ,  G11C11/5607 ,  G11C11/5628 ,  G11C11/5657 ,  G11C13/025 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/28291 ,  H01L29/0692 ,  H01L29/4232 ,  H01L29/7923

摘要： A multi bits flash memory device and a method of operating the same are disclosed. The multi bits flash memory device includes: a stacked structure including: a first active layer with a mesa-like form disposed on a substrate; a second active layer, having a different conductivity type from the first active layer, formed on the first active layer; an active interlayer isolation layer interposed between the first active layer and the second active layer such that the first active layer is electrically isolated from the second active layer; a common source and a common drain formed on a pair of opposite side surfaces of the stacked structure; a common first gate and a common second gate formed on the other pair of opposite side surfaces of the stacked structure; a tunnel dielectric layer interposed between the first and second gates and the first and second active layers; and a charge trap layer, storing charges that tunnel through the tunnel dielectric layer, interposed between the tunnel dielectric layer and the first and second gates.

公开(公告)号：US20050286287A1

公开(公告)日：2005-12-29

申请号：US11154941

申请日：2005-06-17

申请人： Yoon-dong Park ,  Jo-won Lee ,  Chung-woo Kim ,  Eun-hong Lee ,  Sun-ae Seo ,  Woo-joo Kim ,  Hee-soon Chae ,  Soo-doo Chae ,  I-hun Song

发明人： Yoon-dong Park ,  Jo-won Lee ,  Chung-woo Kim ,  Eun-hong Lee ,  Sun-ae Seo ,  Woo-joo Kim ,  Hee-soon Chae ,  Soo-doo Chae ,  I-hun Song

IPC分类号： G11C11/56 ,  G11C16/04 ,  G11C16/28 ,  H01L21/8247 ,  H01L27/06 ,  H01L27/115 ,  G11C5/06

CPC分类号： G11C11/5621 ,  H01L27/0688 ,  H01L27/11521 ,  H01L27/11551

摘要： Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.

摘要翻译： 提供了一种互补的非易失性存储器件，其操作和制造方法，逻辑器件和具有该非易失性存储器件的半导体器件及其读取电路。 互补非易失性存储器件包括顺序堆叠并具有互补关系的第一非易失性存储器和第二非易失性存储器。 第一和第二非易失性存储器被布置成使得其上表面相邻。

公开(公告)号：US20050095775A1

公开(公告)日：2005-05-05

申请号：US10995116

申请日：2004-11-24

申请人： In-Kyeong Yoo ,  Sun-ae Seo ,  Hyun-jo Kim

发明人： In-Kyeong Yoo ,  Sun-ae Seo ,  Hyun-jo Kim

IPC分类号： H01L27/10 ,  G11C11/401 ,  G11C11/404 ,  G11C16/04 ,  H01L21/00 ,  H01L21/822 ,  H01L21/8246 ,  H01L27/112 ,  H01L29/792 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L49/02

CPC分类号： H01L27/11206 ,  G11C16/0475 ,  H01L27/112

摘要： A memory device having one transistor and one resistant element as a storing means and a method for driving the memory device, includes an NPN-type transistor formed on a semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate to cover the transistor in which a contact hole exposing a source region of the transistor is formed, a resistant material in which a bit data “0” or “1” is written connected to the source region of the transistor by a conductive plug or an insulating film, and a conductive plate contacting the resistant material. The memory device exhibits improved degree of integration, reduced current consumption by lengthening a refresh period thereof, and enjoys simplified manufacturing process due to a simple memory cell structure.

摘要翻译： 具有一个晶体管和一个电阻元件作为存储装置的存储器件和用于驱动存储器件的方法包括形成在半导体衬底上的NPN型晶体管，形成在半导体衬底上以覆盖晶体管的层间绝缘膜， 形成暴露晶体管的源极区域的接触孔，通过导电插塞或绝缘膜将位数据“0”或“1”写入的电阻材料连接到晶体管的源极区域，并且导电 板接触抵抗材料。 存储器件通过延长其刷新周期而呈现出提高的集成度，降低的电流消耗，并且由于简单的存储单元结构而享有简化的制造工艺。

公开(公告)号：US08847692B2

公开(公告)日：2014-09-30

申请号：US13174932

申请日：2011-07-01

申请人： Ung-hwan Pi ,  Sun-ae Seo ,  Kee-won Kim ,  In-jun Hwang ,  Kwang-seok Kim ,  Sung-chul Lee

发明人： Ung-hwan Pi ,  Sun-ae Seo ,  Kee-won Kim ,  In-jun Hwang ,  Kwang-seok Kim ,  Sung-chul Lee

IPC分类号： H03B15/00

CPC分类号： H03B15/006

摘要： Oscillators and method of operating the same are provided, the oscillators include a magnetic layer, and a magnetization fixing element configured to fix a magnetization direction of the magnetic layer. The oscillators generate a signal by using precession of a magnetic moment of the magnetic layer.

摘要翻译： 提供了振荡器及其操作方法，所述振荡器包括磁性层和构造成固定磁性层的磁化方向的磁化固定元件。 振荡器通过使用磁性层的磁矩的进动来产生信号。

公开(公告)号：US08537506B2

公开(公告)日：2013-09-17

申请号：US12801712

申请日：2010-06-22

申请人： Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

发明人： Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

IPC分类号： G11B5/39

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  H01L43/08

摘要： An information storage device includes a magnetic track and a magnetic domain wall moving unit. The magnetic track has a plurality of magnetic domains and a magnetic domain wall between each pair of adjacent magnetic domains. The magnetic domain wall moving unit is configured to move at least the magnetic domain wall. The information storage device further includes a magneto-resistive device configured to read information recorded on the magnetic track. The magneto-resistive device includes a pinned layer, a free layer and a separation layer arranged there between. The pinned layer has a fixed magnetization direction. The free layer is disposed between the pinned layer and the magnetic track, and has a magnetization easy axis, which is non-parallel to the magnetization direction of the pinned layer.

摘要翻译： 信息存储装置包括磁道和磁畴壁移动单元。 磁道在每对相邻磁畴之间具有多个磁畴和磁畴壁。 磁畴壁移动单元构造成至少移动磁畴壁。 信息存储装置还包括被配置为读取记录在磁道上的信息的磁阻装置。 磁阻装置包括钉扎层，自由层和布置在其间的分离层。 被钉扎层具有固定的磁化方向。 自由层设置在被钉扎层和磁迹之间，并且具有与被钉扎层的磁化方向不平行的易磁化轴。

公开(公告)号：US20120313079A1

公开(公告)日：2012-12-13

申请号：US13491999

申请日：2012-06-08

申请人： Hyun-jae Song ,  Byung-jin Cho ,  Sun-ae Seo ,  Woo-cheol Shin

发明人： Hyun-jae Song ,  Byung-jin Cho ,  Sun-ae Seo ,  Woo-cheol Shin

IPC分类号： H01L29/775

CPC分类号： H01L29/778 ,  H01L29/1606 ,  H01L29/513

摘要： A graphene electronic device includes a multi-layered gate insulating layer between a graphene channel layer and a gate electrode. The multi-layered gate insulating layer includes an organic insulating layer and an inorganic insulating layer on the organic insulating layer.

摘要翻译： 石墨烯电子器件包括在石墨烯通道层和栅电极之间的多层栅极绝缘层。 多层栅绝缘层包括有机绝缘层和有机绝缘层上的无机绝缘层。

公开(公告)号：US08139387B2

公开(公告)日：2012-03-20

申请号：US12662989

申请日：2010-05-14

申请人： Yoon-dong Park ,  Jo-won Lee ,  Chung-woo Kim ,  Eun-hong Lee ,  Sun-ae Seo ,  Woo-joo Kim ,  Hee-soon Chae ,  Soo-doo Chae ,  I-hun Song

发明人： Yoon-dong Park ,  Jo-won Lee ,  Chung-woo Kim ,  Eun-hong Lee ,  Sun-ae Seo ,  Woo-joo Kim ,  Hee-soon Chae ,  Soo-doo Chae ,  I-hun Song

IPC分类号： G11C5/06

CPC分类号： G11C11/5621 ,  H01L27/0688 ,  H01L27/11521 ,  H01L27/11551

摘要： Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.

摘要翻译： 提供了一种互补的非易失性存储器件，其操作和制造方法，逻辑器件和具有该非易失性存储器件的半导体器件及其读取电路。 互补非易失性存储器件包括顺序堆叠并具有互补关系的第一非易失性存储器和第二非易失性存储器。 第一和第二非易失性存储器被布置成使得其上表面相邻。

公开(公告)号：US08084371B2

公开(公告)日：2011-12-27

申请号：US12923240

申请日：2010-09-10

申请人： David Seo ,  Jai-kwang Shin ,  Sun-ae Seo

发明人： David Seo ,  Jai-kwang Shin ,  Sun-ae Seo

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/8236

CPC分类号： H01L21/3146 ,  H01L21/02115 ,  H01L21/02269 ,  H01L21/0237 ,  H01L21/02444 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/1606 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78684

摘要： Field effect transistors, methods of fabricating a carbon insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor using the same are provided, the methods of fabricating the carbon insulating layer include maintaining a substrate disposed in a molecular beam epitaxy chamber at a temperature in a range of about 300° C. to about 500° C. and maintaining the chamber in vacuum of 10−11 Torr or less prior to performing an epitaxy process, and supplying a carbon source to the chamber to form a carbon insulating layer on the substrate. The carbon insulating layer is formed of diamond-like carbon and tetrahedral amorphous carbon.

摘要翻译： 提供场效应晶体管，使用分子束外延制造碳绝缘层的方法和使用其制造场效应晶体管的方法，制造碳绝缘层的方法包括将设置在分子束外延室中的衬底保持在 温度在约300℃至约500℃的范围内，并且在进行外延过程之前将室维持在10-11乇或更小的真空度，并将碳源供应到室以形成碳绝缘层 在基板上。 碳绝缘层由菱形碳和四面体无定形碳形成。

公开(公告)号：US07961005B1

公开(公告)日：2011-06-14

申请号：US12805550

申请日：2010-08-05

申请人： Ho-jung Kim ,  Jae-kwang Shin ,  Sun-ae Seo

发明人： Ho-jung Kim ,  Jae-kwang Shin ,  Sun-ae Seo

IPC分类号： G06F7/38 ,  H03K19/173

CPC分类号： H03K19/1733 ,  G11C14/0054 ,  G11C14/009 ,  H03K3/356008 ,  H03K3/356182

摘要： Provided is a non-volatile logic circuit that includes a latch unit having a pair of latch nodes and a pair of non-volatile memory cells to be supplied first and second write voltages according to data of the pair of latch nodes when a write enable signal is activated such that a write operation is performed with respect to the pair of non-volatile memory cells. The first and second write voltages are different and logic values of data written to the respective non-volatile memory cells are different.

摘要翻译： 提供了一种非易失性逻辑电路，其包括具有一对锁存节点和一对非易失性存储器单元的锁存单元，当一个写使能信号 被激活，使得相对于该对非易失性存储单元执行写入操作。 第一和第二写入电压是不同的，写入各个非易失性存储器单元的数据的逻辑值是不同的。

公开(公告)号：US20110080221A1

公开(公告)日：2011-04-07

申请号：US12801710

申请日：2010-06-22

申请人： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Kwang-seok Kim ,  Ji-young Bae

发明人： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Kwang-seok Kim ,  Ji-young Bae

IPC分类号： H03B28/00

CPC分类号： H03B15/006

摘要： An oscillator includes: a plurality of free layers and a non-magnetic layer disposed between the plurality of free layers. Each of the plurality of free layers has perpendicular magnetic anisotropy or in-plane magnetic anisotropy. Magnetization directions of the free layers are periodically switched such that a signal within a given frequency band oscillates.

摘要翻译： 振荡器包括：多个自由层和设置在多个自由层之间的非磁性层。 多个自由层中的每一个具有垂直的磁各向异性或面内磁各向异性。 定期切换自由层的磁化方向，使给定频带内的信号振荡。