公开(公告)号：US20120309181A1

公开(公告)日：2012-12-06

申请号：US13359385

申请日：2012-01-26

Applicant: Vladimir Machkaoutsan ,  Jan Willem Maes ,  Qi Xie

Inventor： Vladimir Machkaoutsan ,  Jan Willem Maes ,  Qi Xie

IPC: H01L21/28

CPC classification number: H01L21/823842 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/66545 ,  H01L29/7833

Abstract: According to some embodiments, an electrode have a high effective work function is formed. The electrode may be the gate electrode of a transistor and may be formed on a high-k gate dielectric by depositing a first layer of conductive material, exposing that first layer to a hydrogen-containing gas, and depositing a second layer of conductive material over the first layer. The first layer may be deposited using a non-plasma process in which the substrate is not exposed to plasma or plasma-generated radicals. The hydrogen-containing gas to which the first layer is exposed may include an excited hydrogen species, which may be part of a hydrogen-containing plasma, and may be hydrogen-containing radicals. The first layer may also be exposed to oxygen before depositing the second layer. The work function of the gate electrode in the gate stack may be about 5 eV or higher in some embodiments.

Abstract translation: 根据一些实施例，形成具有高有效功函数的电极。 电极可以是晶体管的栅极，并且可以通过沉积第一层导电材料，将第一层暴露于含氢气体，并将第二层导电材料沉积在高k栅极电介质上形成 第一层。 可以使用其中衬底不暴露于等离子体或等离子体产生的自由基的非等离子体工艺来沉积第一层。 第一层露出的含氢气体可以包括可以是含氢等离子体的一部分的被激发的氢物质，并且可以是含氢基团。 在沉积第二层之前，第一层也可能暴露于氧气。 在一些实施例中，栅极堆叠中的栅电极的功函数可以为约5eV或更高。

公开(公告)号：US08323737B2

公开(公告)日：2012-12-04

申请号：US12177730

申请日：2008-07-22

Applicant: Arthur Sherman

Inventor： Arthur Sherman

IPC: C23C16/00

CPC classification number: C23C16/45531 ,  C23C16/452 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/50 ,  C30B25/14

Abstract: The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the second reactant passes through a radical generator which partially decomposes or activates the second reactant into a gaseous radical before it impinges on the monolayer. This second reactant does not necessarily form a monolayer but is available to react with the monolayer. A pump removes the excess second reactant and reaction products completing the process cycle. The process cycle can be repeated to grow the desired thickness of film.

Abstract translation: 本发明提供了使用在低压下操作的反应器的顺序化学气相沉积，泵去除过量的反应物，以及通过阀将气体引入反应器的管线。 第一反应物在待涂覆的部分上形成单层，而第二反应物通过自由基发生剂，其在第二反应物撞击到单层之前部分地将第二反应物分解或活化成气态基团。 该第二反应物不一定形成单层，但可用于与单层反应。 泵除去过量的第二反应物和反应产物完成了工艺循环。 可以重复该工艺循环以增长所需的膜厚度。

公开(公告)号：US08252703B2

公开(公告)日：2012-08-28

申请号：US13084254

申请日：2011-04-11

Applicant: Hannu Huotari ,  Suvi Haukka

Inventor： Hannu Huotari ,  Suvi Haukka

IPC: H01L21/469

CPC classification number: H01L21/32051 ,  H01L27/10852 ,  H01L28/84 ,  Y10S977/742 ,  Y10S977/773

Abstract: Methods of forming a roughened metal surface on a substrate are provided, along with structures comprising such roughened surfaces. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by modifying process conditions to cause metal agglomeration or by treating the substrate surface to provide a limited number of discontinuous reactive sites. The roughened metal surface may be used, for example, in the manufacture of integrated circuits.

Abstract translation: 提供了在基底上形成粗糙金属表面的方法以及包括这种粗糙表面的结构。 在优选实施例中，通过在衬底表面上选择性地沉积金属或金属氧化物以形成离散的三维岛状体来形成粗糙表面。 可以例如通过改变工艺条件以引起金属聚集或通过处理衬底表面以提供有限数量的不连续反应位点来获得选择性沉积。 粗糙化的金属表面可以用于例如集成电路的制造。

公开(公告)号：US20120164329A1

公开(公告)日：2012-06-28

申请号：US12979449

申请日：2010-12-28

Applicant: Tom Blomberg

Inventor： Tom Blomberg

IPC: C23C16/455 ,  C23C16/28 ,  C23C16/22 ,  C23C16/08 ,  C23C16/14

CPC classification number: C23C16/44 ,  C23C16/45525 ,  C23C16/45544

Abstract: The present invention relates generally to methods and apparatus for the controlled growing of material on substrates. According to embodiments of the present invention, a precursor fed is split in to two paths from a precursor source. One of the paths is restricted in a continuous manner. The other path is restricted in a periodic manner. The output of the two paths converges at a point prior to entry of the reactor. Therefore, a single precursor source is able to fed precursor in to a reactor under two different conditions, one which can be seen as mimicking ALD conditions and one which can be seen as mimicking CVD conditions. This allows for an otherwise single mode reactor to be operated in a plurality of modes including one or more ALD/CVD combination modes.

Abstract translation: 本发明一般涉及在衬底上控制生长材料的方法和装置。 根据本发明的实施方案，将前体进料分离成来自前体源的两条路径。 其中一条路径以连续的方式受到限制。 另一条路径被定期地限制。 两个路径的输出在反应器进入之前的某一点收敛。 因此，单个前体源能够在两种不同的条件下将前体进料到反应器中，其可以被看作模拟ALD条件，也可以被看作模拟CVD条件。 这允许否则单模电抗器以包括一个或多个ALD / CVD组合模式的多种模式操作。

公开(公告)号：US08180594B2

公开(公告)日：2012-05-15

申请号：US11850941

申请日：2007-09-06

Applicant: Robin A. Stephan

Inventor： Robin A. Stephan

IPC: G06F19/00 ,  G06F11/30

CPC classification number: G05B23/0275 ,  G05B23/0286

Abstract: A system and method of automated customizable error diagnostics is provided for use with industrial apparatus, such as semiconductor manufacturing apparatus. An external device, such as a robot, is provided with its own low level controller and a high level controller is provided to send instructions to the low level controller. The high level controller is programmed to perform automated customizable error diagnostics to diagnose errors in the external device. The high level controller monitors the occurrence of error conditions in the external device and executes a list of diagnostic commands based upon a detected error condition. Data concerning the error condition is automatically gathered to diagnose the cause of the error, before the external device executes its own error handling routines. In some embodiments, an editor is provided to edit and customize the diagnostic commands and a viewer is provided to allow diagnostic data to be viewed.

Abstract translation: 提供了一种可自动定制的错误诊断的系统和方法，用于工业设备，如半导体制造设备。 诸如机器人的外部设备设置有其自己的低级控制器，并且提供高级控制器以向低级别控制器发送指令。 高电平控制器被编程为执行自动可定制的错误诊断以诊断外部设备中的错误。 高级别控制器监视外部设备中的错误状况的发生，并根据检测到的错误状况执行诊断命令列表。 在外部设备执行自己的错误处理例程之前，将自动收集有关错误条件的数据，以诊断错误的原因。 在一些实施例中，提供编辑器来编辑和定制诊断命令，并且提供观看者以允许查看诊断数据。

公开(公告)号：US08118941B2

公开(公告)日：2012-02-21

申请号：US12881634

申请日：2010-09-14

Applicant: Vladimir Kuznetsov

Inventor： Vladimir Kuznetsov

IPC: H01L21/67 ,  H01L21/683

CPC classification number: C30B23/005 ,  C23C16/045 ,  C23C16/4404 ,  C23C16/45565 ,  C30B35/002 ,  H01L21/67103 ,  H01L21/67109 ,  Y10T29/41

Abstract: Holes in semiconductor processing reactor parts are sized to facilitate deposition of protective coatings, such as by chemical vapor deposition at atmospheric pressure. In some embodiments, the holes each have a flow constriction that narrows the holes in one part and that also divides the holes into one or more other portions. In some embodiments, the aspect ratios of the one or more other portions are about 15:1 or less, or about 7:1 or less, and have a cylindrical or conical cross-sectional shape. The holes are coated with a protective coating, such as a silicon carbide coating, by chemical vapor deposition, including chemical vapor deposition at atmospheric pressure.

Abstract translation: 半导体处理反应器部件中的孔的尺寸适于促进保护涂层的沉积，例如通过大气压下的化学气相沉积。 在一些实施例中，孔各自具有流动收缩部，其使一部分中的孔变窄，并且还将孔分成一个或多个其它部分。 在一些实施例中，一个或多个其它部分的长宽比为约15:1或更小，或约7:1或更小，并且具有圆柱形或圆锥形横截面形状。 通过化学气相沉积（包括大气压下的化学气相沉积），用诸如碳化硅涂层的保护涂层涂覆孔。

公开(公告)号：US08099190B2

公开(公告)日：2012-01-17

申请号：US11821538

申请日：2007-06-22

Applicant: Christianus Gerardus Maria De Ridder ,  Theodorus Gerardus Maria Oosterlaken

Inventor： Christianus Gerardus Maria De Ridder ,  Theodorus Gerardus Maria Oosterlaken

IPC: G06F19/00 ,  G06F7/00 ,  G01N21/86 ,  G01V8/00

CPC classification number: H01L21/67265 ,  H01L21/681 ,  Y10S414/135 ,  Y10S414/136 ,  Y10S414/137 ,  Y10S414/138 ,  Y10S414/139

Abstract: A method and an apparatus for transferring a substantially flat and substantially circular objects, such as wafers, from a pick-up position to a delivery position, the apparatus comprising, a manipulator, at least one source for emitting a source signal, at least one sensor for sensing said source signal and for providing a sensor signal, a computing device arranged for processing at least one sensor signal to obtain data on the position of said object, the manipulator being arranged for simultaneously transferring a first and a second object along a path in a substantially parallel orientation, spaced apart from each other, and substantially co-axially whereby the central axis of each object may be displaced radially, a said source and a said sensor are connected by a virtual line, whereby the virtual line includes an angle with the central axes of the first and second objects.

Abstract translation: 一种用于将基本上平坦且基本上圆形的物体（例如晶片）从拾取位置传送到传送位置的方法和装置，所述设备包括：机械手，用于发射源信号的至少一个源，至少一个 传感器，用于感测所述源信号并提供传感器信号;计算装置，被布置成用于处理至少一个传感器信号以获得关于所述物体的位置的数据，所述操纵器布置成沿着路径同时传送第一和第二物体 在基本上平行的方向上彼此间隔开并且基本上同轴，由此每个物体的中心轴可以径向位移，所述源和所述传感器通过虚拟线连接，由此虚拟线包括角度 第一和第二物体的中心轴。

公开(公告)号：US07998883B2

公开(公告)日：2011-08-16

申请号：US12820633

申请日：2010-06-22

Applicant: Matti Putkonen

Inventor： Matti Putkonen

IPC: H01L21/314

CPC classification number: H01L21/0228 ,  C23C16/405 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/28211 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31641 ,  H01L29/517 ,  H01M8/1253 ,  Y02E60/525 ,  Y02P70/56

Abstract: This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapour-phase pulses of at least one metal source material, and at least one oxygen source material are fed into a reaction space and contacted with the substrate. According to the invention, an yttrium source material and a zirconium source material are alternately used as the metal source material so as to form an yttrium-stabilised zirconium oxide (YSZ) thin film on a substrate.

Abstract translation: 本发明涉及通过ALD型工艺在衬底上生产氧化物薄膜的方法。 根据该方法，将至少一种金属源材料和至少一种氧源材料的交替气相脉冲进料到反应空间中并与基底接触。 根据本发明，交替使用钇源材料和锆源材料作为金属源材料，以在衬底上形成钇稳定的氧化锆（YSZ）薄膜。

公开(公告)号：US07971861B2

公开(公告)日：2011-07-05

申请号：US12362009

申请日：2009-01-29

Applicant: Pekka T. Soininen

Inventor： Pekka T. Soininen

IPC: B01F3/04

CPC classification number: C23C16/4482 ,  C23C16/4481 ,  Y10S261/65

Abstract: Containers for providing vapor phase reactant from liquid sources include bubbler designs and designs in which carrier gas flows over the liquid surface. Among the bubbler arrangements, a bypass conductance is provided to release excess pressure from the gas volume inside the container, or an enlarged bubbler tube is provided with a volume sufficient to accommodate all possible liquid backflow without having the liquid exit the container. Among the overflow designs, flow dividers provide a tortuous path for the gas to increase the time exposure of carrier gas packets to the evaporating liquid surface. The flow dividers can be microporous to encourage capillary action, thereby increasing the evaporating surface. The tortuous gas flow path can be separated from the liquid phase by a breathable semi-porous membrane that permits vapor phase reactant to pass through but prohibits liquid from passing in the other direction.

Abstract translation: 用于从液体源提供气相反应物的容器包括起泡器设计和载气流过液体表面的设计。 在起泡器布置中，提供旁路电导以从容器内的气体体积释放过多的压力，或者扩大的起泡管具有足以容纳所有可能的液体回流而不使液体离开容器的体积。 在溢流设计中，分流器为气体提供曲折的路径，以增加载气分子到蒸发液体表面的时间暴露。 分流器可以是微孔的以促进毛细作用，从而增加蒸发表面。 曲折的气体流路可以通过允许气相反应物通过但禁止液体沿另一方向通过的透气半多孔膜与液相分离。

公开(公告)号：US07971734B2

公开(公告)日：2011-07-05

申请号：US12011981

申请日：2008-01-30

Applicant: Christianus Gerardus Maria De Ridder ,  Adriaan Garssen

Inventor： Christianus Gerardus Maria De Ridder ,  Adriaan Garssen

IPC: A47G19/08

CPC classification number: H01L21/67303 ,  H01L21/67309

Abstract: Wafer boat for holding semiconductor wafers in a spaced vertical arrangement during processing, said wafer boat comprising a plurality of vertically spaced holding positions for receiving and supporting said wafers in a substantially horizontal orientation, wherein the holding positions can be accessed from a front side of the wafer boat to allow for insertion and removal of a wafer, wherein at least one holding position comprises a back support for engaging a back side portion of a wafer and two lateral supports for engaging opposite lateral side portions of the wafer, and wherein the back support is disposed at a lower position than said two lateral supports such that sagging of a front side portion of an inserted wafer near the front side of the wafer boat due to gravity is at least partially compensated for.

Abstract translation: 用于在处理过程中以间隔垂直布置保持半导体晶片的晶片舟，所述晶片舟包括多个垂直间隔的保持位置，用于以基本上水平的方向接收和支撑所述晶片，其中保持位置可从 晶片舟以允许插入和移除晶片，其中至少一个保持位置包括用于接合晶片的后侧部分的后支撑件和用于接合晶片的相对横向侧部分的两个侧向支撑件，并且其中后支撑件 被布置在比所述两个侧向支撑件更低的位置处，使得由于重力而在晶片舟皿的前侧附近的插入晶片的前侧部分的下垂至少部分地被补偿。