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    MEMS devices with an etch stop layer
    91.
    发明授权
    MEMS devices with an etch stop layer 失效
    具有蚀刻停止层的MEMS器件

    公开(公告)号：US08576474B2

    公开(公告)日：2013-11-05

    申请号：US12009389

    申请日：2008-01-17

    Applicant: Fusao Ishii

    Inventor： Fusao Ishii

    IPC: G02B26/00 ,  G02B26/08

    CPC classification number: G02B26/0841 ,  B81B2201/047 ,  B81B2203/0181 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2203/0735 ,  B81C2203/0771

    Abstract: This invention discloses a MEMS device supported on a substrate formed with electric circuit thereon. The MEMS device includes at least an electrode connected to the circuit and at least a movable element that is controlled by the electrode. The MEMS device further includes a conformal protective layer over the electrode and the circuit wherein the protective layer is semiconductor-based material. In a preferred embodiment, the MEMS device is a micromirror and the semiconductor material is one of a group of materials consisting of Si, SiC, Ge, SiGe, SiNi and SiW.

    Abstract translation: 本发明公开了一种在其上形成有电路的基板上支撑的MEMS器件。 MEMS器件至少包括连接到电路的电极和至少一个由电极控制的可移动元件。 MEMS器件还包括电极和电路上的共形保护层，其中保护层是基于半导体的材料。 在优选实施例中，MEMS器件是微镜，并且半导体材料是由Si，SiC，Ge，SiGe，SiNi和SiW组成的一组材料之一。

    Method of etching a device using a hard mask and etch stop layer
    92.
    发明授权
    Method of etching a device using a hard mask and etch stop layer 有权
    使用硬掩模和蚀刻停止层蚀刻器件的方法

    公开(公告)号：US07981308B2

    公开(公告)日：2011-07-19

    申请号：US12006377

    申请日：2007-12-31

    Applicant: Gary Yama

    Inventor： Gary Yama

    IPC: B44C1/22 ,  H01L21/302

    CPC classification number: B81C1/00595 ,  B81C2201/0132 ,  B81C2201/014 ,  H01L21/0475

    Abstract: A method of etching a device in one embodiment includes providing a silicon carbide substrate, forming a silicon nitride layer on a surface of the silicon carbide substrate, forming a silicon carbide layer on a surface of the silicon nitride layer, forming a silicon dioxide layer on a surface of the silicon carbide layer, forming a photoresist mask on a surface of the silicon dioxide layer, and etching the silicon dioxide layer through the photoresist mask.

    Abstract translation: 在一个实施例中蚀刻器件的方法包括提供碳化硅衬底，在碳化硅衬底的表面上形成氮化硅层，在氮化硅层的表面上形成碳化硅层，在二氧化硅层上形成二氧化硅层 碳化硅层的表面，在二氧化硅层的表面上形成光致抗蚀剂掩模，并且通过光致抗蚀剂掩模蚀刻二氧化硅层。

    METHOD OF FABRICATING SINGLE CHIP FOR INTEGRATING FIELD-EFFECT TRANSISTOR INTO MEMS STRUCTURE
    93.
    发明申请
    METHOD OF FABRICATING SINGLE CHIP FOR INTEGRATING FIELD-EFFECT TRANSISTOR INTO MEMS STRUCTURE 审中-公开
    将场效应晶体管整合到MEMS结构中的制造单芯片的方法

    公开(公告)号：US20110117747A1

    公开(公告)日：2011-05-19

    申请号：US12652068

    申请日：2010-01-05

    Applicant: Chin-Long Wey ,  Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Sheng-Hsiang Tseng ,  Hsin-Hao Liao

    Inventor： Chin-Long Wey ,  Chin-Fong Chiu ,  Ying-Zong Juang ,  Hann-Huei Tsai ,  Sheng-Hsiang Tseng ,  Hsin-Hao Liao

    IPC: H01L21/3065

    CPC classification number: B81C1/00246 ,  B81B2207/015 ,  B81C2201/014 ,  B81C2203/0714 ,  B81C2203/0742 ,  H01L23/522 ,  H01L27/0617 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of fabricating a single chip for integrating a field-effect transistor into a microelectromechanical systems (MEMS) structure is provided. The method includes the steps of: providing a substrate having thereon at least one transistor structure, a MEMS structure and a blocking structure, wherein the blocking structure encircles the MEMS structure to separate the MEMS structure from the transistor structure; forming a masking layer for covering the transistor structure, the MEMS structure and the blocking structure; forming a patterned photoresist layer on the masking layer; performing a first etching process by using the patterned photoresist layer to remove the masking layer on the MEMS structure; and performing a second etching process by removing a portion of the MEMS structure to form a plurality of microstructures such that a relative motion among the microstructures takes place in a direction perpendicular to the substrate.

    Abstract translation: 提供了一种制造用于将场效应晶体管集成到微机电系统（MEMS）结构中的单个芯片的方法。 该方法包括以下步骤：提供其上具有至少一个晶体管结构的基板，MEMS结构和阻挡结构，其中所述阻挡结构环绕所述MEMS结构以将所述MEMS结构与所述晶体管结构分离; 形成用于覆盖晶体管结构，MEMS结构和阻挡结构的掩模层; 在掩模层上形成图案化的光致抗蚀剂层; 通过使用图案化的光致抗蚀剂层去除MEMS结构上的掩模层来执行第一蚀刻工艺; 以及通过去除所述MEMS结构的一部分以形成多个微观结构来执行第二蚀刻工艺，使得所述微结构之间的相对运动在垂直于所述衬底的方向上发生。

    Micro-electro-mechanical systems (MEMS) device and process for fabricating the same
    95.
    发明授权
    Micro-electro-mechanical systems (MEMS) device and process for fabricating the same 有权
    微电子机械系统（MEMS）装置及其制造方法

    公开(公告)号：US07795063B2

    公开(公告)日：2010-09-14

    申请号：US11967261

    申请日：2007-12-31

    Applicant: Tsung-Min Hsieh ,  Chien-Hsing Lee

    Inventor： Tsung-Min Hsieh ,  Chien-Hsing Lee

    IPC: H01L21/00 ,  H01L29/78 ,  H04R25/00 ,  H04R11/02

    CPC classification number: B81C1/00182 ,  B81C1/00246 ,  B81C2201/014 ,  B81C2203/0714 ,  B81C2203/0735

    Abstract: A micro-electro-mechanical systems (MEMS) device includes a back-plate substrate, having an intended region formed with a plurality of perforating holes. A first structural dielectric layer, disposed on the back-plate substrate, wherein the dielectric layer having an opening above the intended region. An etching stop layer, disposed over the first structural dielectric layer. A second structural dielectric layer, formed over the back-plate substrate. The etching stop layer and the second structural dielectric layer form at least a part of a micro-machine diaphragm, and cover over the opening of the first structural dielectric layer to form a chamber between the micro-machine diaphragm and the back-plate substrate.

    Abstract translation: 微电子机械系统（MEMS）装置包括背板基板，其具有形成有多个穿孔的预期区域。 布置在所述背板基板上的第一结构介电层，其中所述电介质层具有在所述预定区域上方的开口。 设置在第一结构介电层上的蚀刻停止层。 形成在背板基板上的第二结构介电层。 蚀刻停止层和第二结构介电层形成微机隔膜的至少一部分，并且覆盖在第一结构介电层的开口上，以在微机隔膜和背板基板之间形成室。

    MEMS STRUCTURE AND METHOD OF MANUFACTURING THE SAME
    96.
    发明申请
    MEMS STRUCTURE AND METHOD OF MANUFACTURING THE SAME 有权
    MEMS结构及其制造方法

    公开(公告)号：US20100084723A1

    公开(公告)日：2010-04-08

    申请号：US12348322

    申请日：2009-01-05

    Applicant: Jen-Yi Chen ,  Chin-Horng Wang

    Inventor： Jen-Yi Chen ,  Chin-Horng Wang

    IPC: H01L29/84 ,  H01L21/34

    CPC classification number: B81C1/00476 ,  B81B2201/0257 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2203/0714 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00

    Abstract: An MEMS structure and a method of manufacturing the same are provided. The MEMS structure includes a substrate and at least one suspended microstructure located on the substrate. The suspended microstructure includes a plurality of metal layers, at least one dielectric layer, and at least one peripheral metal wall. The dielectric layer is sandwiched by the metal layers, and the peripheral metal wall is parallel to a thickness direction of the suspended microstructure and surrounds an edge of the dielectric layer.

    Abstract translation: 提供了MEMS结构及其制造方法。 MEMS结构包括衬底和位于衬底上的至少一个悬浮微结构。 悬浮的微结构包括多个金属层，至少一个电介质层和至少一个外围金属壁。 电介质层被金属层夹在中间，周边金属壁平行于悬浮微结构的厚度方向并且包围电介质层的边缘。

    Method for fabricating a Microstructure
    98.
    发明申请
    Method for fabricating a Microstructure 有权
    微结构制造方法

    公开(公告)号：US20090137113A1

    公开(公告)日：2009-05-28

    申请号：US11946831

    申请日：2007-11-28

    Applicant: Sheng Hung Li ,  Siew-Seong Tan ,  Cheng-Yen Liu ,  Li-Ken Yeh

    Inventor： Sheng Hung Li ,  Siew-Seong Tan ,  Cheng-Yen Liu ,  Li-Ken Yeh

    IPC: H01L21/4763

    CPC classification number: B81C1/00801 ,  B81C2201/0107 ,  B81C2201/014

    Abstract: A method for fabricating a microstructure is to form at least one insulation layer including a micro-electro-mechanical structure therein over an upper surface of a silicon substrate. The micro-electro-mechanical structure includes at least one microstructure and a metal sacrificial structure that are independent with each other. In the metal sacrificial structure are formed a plurality of metal layers and a plurality of metal via layers connected to the respective metal layers. A barrier layer is formed over an upper surface of the insulation layer, and an etching stop layer is subsequently formed over a lower surface of the silicon substrate. An etching operation is carried out from the lower surface of the silicon substrate to form a space corresponding to the micro-electro-mechanical structure, and then the metal sacrificial structure is etched, thus achieving a microstructure suspension.

    Abstract translation: 用于制造微结构的方法是在硅衬底的上表面上形成包括微​​电子机械结构的至少一个绝缘层。 微电子机械结构包括彼此独立的至少一个微结构和金属牺牲结构。 在金属牺牲结构中形成多个金属层和连接到各个金属层的多个金属通孔层。 在绝缘层的上表面上形成阻挡层，随后在硅衬底的下表面上形成蚀刻停止层。 从硅衬底的下表面进行蚀刻操作以形成与微电子机械结构相对应的空间，然后蚀刻金属牺牲结构，从而实现微结构悬浮。

    Method for producing cavities having optically transparent wall
    99.
    发明授权
    Method for producing cavities having optically transparent wall 有权
    用于制造具有光学透明壁的空腔的方法

    公开(公告)号：US07479234B2

    公开(公告)日：2009-01-20

    申请号：US10492009

    申请日：2002-09-04

    Applicant: Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

    Inventor： Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

    IPC: H01B13/00

    CPC classification number: B81C1/00047 ,  B81C1/00246 ,  B81C2201/0115 ,  B81C2201/014

    Abstract: A method is proposed which will enable cavities having optically transparent walls to be produced simply and cost-effectively in a component by using standard methods of microsystems technology. For this purpose, a silicon region is first produced, which is surrounded on all sides by at least one optically transparent cladding layer. At least one opening is then produced in the cladding layer. Over this opening, the silicon surrounded by the cladding layer is dissolved out, forming a cavity within the cladding layer. In this context, the cladding layer acts as an etch barrier layer.

    Abstract translation: 提出了一种通过使用微系统技术的标准方法，能够简单且成本有效地在部件中产生具有光学透明壁的空腔的方法。 为此目的，首先制造出硅区域，其通过至少一个光学透明覆层在所有侧面上被包围。 然后在包层中产生至少一个开口。 在该开口上，由包覆层包围的硅被溶出，在包覆层内形成空腔。 在本文中，包覆层用作蚀刻阻挡层。

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