Magnetic clips and substrate holders for use in a plasma processing system
    91.
    发明授权
    Magnetic clips and substrate holders for use in a plasma processing system 有权
    用于等离子体处理系统的磁性夹子和衬底保持器

    公开(公告)号:US08226795B2

    公开(公告)日:2012-07-24

    申请号:US12364888

    申请日:2009-02-03

    Abstract: Magnetic clips for use with a substrate holder for holding a substrate in a processing chamber of a plasma treatment system. The clip includes first and second body members each having a clamping surface and a magnet. The first body member is configured to be mechanically connected with the substrate holder. The second body member is pivotally connected by a hinge with the first body member for movement relative to the first body member between closed and opened positions. In the closed position, an edge region of the substrate is positioned between the clamping surfaces. In the opened position, the edge region is released. The magnet on the second body member magnetically attracts the magnet on the first body member, when the second body member is in the closed position, to apply a force that restrains movement of the edge region of the substrate relative to the clamping surfaces.

    Abstract translation: 用于将衬底保持在等离子体处理系统的处理室中的衬底保持器使用的磁性夹具。 夹具包括每个具有夹紧表面和磁体的第一和第二主体构件。 第一本体构件被构造成与衬底保持器机械连接。 第二主体构件通过铰链枢转地连接有第一主体构件,用于相对于第一主体构件在关闭位置和打开位置之间移动。 在关闭位置,衬底的边缘区域位于夹紧表面之间。 在打开位置,边缘区域被释放。 当第二主体构件处于关闭位置时,第二主体构件上的磁体磁吸引第一主体构件上的磁体,以施加限制基板的边缘区域相对于夹紧表面的移动的力。

    MICROSCOPIC EXAMINATION OF AN OBJECT USING A SEQUENCE OF OPTICAL MICROSCOPY AND PARTICLE BEAM MICROSCOPY
    92.
    发明申请
    MICROSCOPIC EXAMINATION OF AN OBJECT USING A SEQUENCE OF OPTICAL MICROSCOPY AND PARTICLE BEAM MICROSCOPY 有权
    使用光学显微镜和粒子束显微镜序列的对象的微观检查

    公开(公告)号:US20120133757A1

    公开(公告)日:2012-05-31

    申请号:US13320208

    申请日:2010-05-07

    Abstract: For the microscopy of an object using a combination of optical microscopy and particle beam microscopy, a microscope slide system comprises an electrically conductive holder, wherein at least one window is configured in the holder, and wherein the holder has the dimensions of a standard glass microscope slide for the optical microscopy; a microscope slide element, which is designed to carry the object for the microscopy and which is designed such that the element can be placed over the window; and a fastening device, which is designed to fix the microscope slide element over the window. By means of said microscope slide system, the object can be analyzed using separate microscopes, without having to relocate the object.

    Abstract translation: 对于使用光学显微镜和粒子束显微镜的组合的物体的显微镜,显微镜载玻片系统包括导电保持器,其中至少一个窗口构造在保持器中,并且其中保持器具有标准玻璃显微镜的尺寸 幻灯片用于光学显微镜; 显微镜幻灯片元件,其被设计为携带用于显微镜的物体,并且被设计成使得元件可以放置在窗户上方; 以及紧固装置,其被设计成将显微镜载片固定在窗户上。 通过所述显微镜幻灯片系统,可以使用分开的显微镜分析对象,而不必重新定位对象。

    METHOD AND APPARATUS FOR SPECIMEN FABRICATION
    93.
    发明申请
    METHOD AND APPARATUS FOR SPECIMEN FABRICATION 有权
    方法和装置用于样本制造

    公开(公告)号:US20120085924A1

    公开(公告)日:2012-04-12

    申请号:US13326783

    申请日:2011-12-15

    Abstract: A focused ion beam apparatus, including: a sample holder provided with a fixing surface for fixing, via a deposition film, a micro-specimen extracted from a specimen using a method for fabrication by a focused ion beam, in which a width of the fixing surface is smaller than 50 microns; a specimen transferring unit having a probe to which the specimen can be joined through the deposition film, and transferring the micro-specimen extracted from the specimen by the focused ion-beam fabrication method, to the sample holder; and a sample chamber in which the sample, the sample holder and the probe are laid out, wherein, in the sample chamber, the micro-specimen extracted from the specimen by the focused ion-beam fabrication method is fixed to the fixing surface of the sample holder through the deposition film, and the micro-specimen fixed to the fixing surface is fabricated by irradiating the focused ion beam.

    Abstract translation: 一种聚焦离子束装置,包括:样本保持器,其设置有固定表面,用于通过沉积膜固定从样本提取的微量样本,其中使用聚焦离子束制造方法,其中定影宽度 表面小于50微米; 具有可以通过沉积膜将样品接合的探针的样本转移单元,通过聚焦离子束制造方法将从样品提取的微量样品转移到样品保持器; 以及样本室,样本保持器和探针布置在其中,其中,在样本室中,通过聚焦离子束制造方法从样本提取的微量样本被固定到 通过沉积膜的样品保持器和固定到固定表面的微型样品通过照射聚焦离子束来制造。

    Ion beam processing apparatus
    94.
    发明授权
    Ion beam processing apparatus 失效
    离子束处理装置

    公开(公告)号:US08089055B2

    公开(公告)日:2012-01-03

    申请号:US12031696

    申请日:2008-02-14

    Abstract: An ion-cut machine and method for slicing silicon ingots into thin wafers for solar cell manufacturing is set forth, amongst other embodiments and applications. One embodiment comprises two carousels: first carousel (100) adapted for circulating workpieces (55) under ion beam (10) inside target vacuum chamber (30) while second carousel (80) is adapted for carrying implanted workpieces through a sequence of process stations that may include annealing (60), cleaving (70), slice output (42), ingot replacement (52), handle bonding, cleaning, etching and others. Workpieces are essentially swapped between carousels. In one embodiment, the swapping system comprises a high throughput load lock (200) disposed in the wall of the vacuum chamber (30), a vacuum swapper (110) swapping workpieces between first carousel (100) and load lock (200), and an atmospheric swapper (90) swapping workpieces between load lock (200) and second carousel (80).

    Abstract translation: 除了其他实施例和应用之外,阐述了一种将硅锭切割成用于太阳能电池制造的薄晶片的离子切割机和方法。 一个实施例包括两个转盘:第一转盘(100),适于在目标真空室(30)内部的离子束(10)周围循环工件(55),而第二转盘(80)适于通过一系列处理站运送植入的工件, 可以包括退火(60),切割(70),切片输出(42),锭替代(52),手柄接合,清洁,蚀刻等。 工件本质上在转盘之间交换。 在一个实施例中,交换系统包括设置在真空室(30)的壁中的高通量负载锁(200),在第一转盘(100)和负载锁(200)之间交换工件的真空交换器(110),以及 大气切换器(90)在装载锁(200)和第二转盘(80)之间交换工件。

    Electrostatic chuck cleaning during semiconductor substrate processing
    95.
    发明授权
    Electrostatic chuck cleaning during semiconductor substrate processing 失效
    半导体衬底处理过程中的静电吸盘清洗

    公开(公告)号:US07993465B2

    公开(公告)日:2011-08-09

    申请号:US11470772

    申请日:2006-09-07

    Abstract: Methods and apparatus for cleaning electrostatic chucks in processing chambers are provided. The process comprises flowing a backside gas comprising a reactive agent into a zone in a process chamber, the zone defined by a space between a surface of an electrostatic chuck or of a cleaning station and a surface of a substrate. The surface of the electrostatic chuck is etched with the reactive agent to remove debris. An apparatus for cleaning an electrostatic chuck is also provided, the apparatus comprising: a process chamber; an elongate arm having a reach disposed through a wall of the process chamber; an electrostatic chuck attached to the elongate arm; a cleaning station located within the reach of the elongate arm; and a reactive gas source that is operatively connected to the cleaning station.

    Abstract translation: 提供了在处理室中清洁静电卡盘的方法和装置。 该方法包括将包含反应剂的背面气体流入处理室中的区域,该区域由静电卡盘或清洁站的表面与基底表面之间的空间限定。 用反应剂蚀刻静电卡盘的表面以除去碎屑。 还提供了一种用于清洁静电卡盘的设备,该设备包括:处理室; 具有通过处理室的壁布置的延伸臂; 固定在细长臂上的静电卡盘; 位于细长臂的范围内的清洁站; 以及可操作地连接到清洁站的反应气体源。

    Polyceramic e-chuck
    100.
    发明授权
    Polyceramic e-chuck 有权
    聚碳酸酯卡盘

    公开(公告)号:US07667944B2

    公开(公告)日:2010-02-23

    申请号:US11823978

    申请日:2007-06-29

    Applicant: Mahmood Naim

    Inventor: Mahmood Naim

    Abstract: The present invention discloses an electrostatic chuck for clamping work substrates, said chuck comprising three layers, where the dielectric constant of included non-conductive layers is selected to provide overall lower capacitance to the chuck. In the chuck assembly of the present invention, the top dielectric layer that is in contact with a substrate, such as, a wafer, has a dielectric constant that is preferably greater than about 5, with a resistivity that is preferably greater than about 1E6 ohm.m, whereas the bottom dielectric layer has a dielectric constant that is preferably less than about 5 and a resistivity that is preferably greater than about 1E10 ohm.m. The intermediate layer preferably has a conductive layer where the resistivity is less than about 1 ohm.m.

    Abstract translation: 本发明公开了一种用于夹持工作基板的静电卡盘,所述卡盘包括三层,其中选择所包括的非导电层的介电常数以向卡盘提供总体较低的电容。 在本发明的卡盘组件中,与衬底(例如晶片)接触的顶部电介质层的介电常数优选大于约5,电阻率优选大于约1E6欧姆 而底部电介质层的介电常数优选小于约5,电阻率优选大于约1E10欧姆·米。 中间层优选具有电阻率小于约1欧姆·米的导电层。

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