公开(公告)号：US20140145636A1

公开(公告)日：2014-05-29

申请号：US14087500

申请日：2013-11-22

Applicant: TRUMPF Huettinger GmbH + Co. KG

Inventor： Rolf Merte

IPC: H01J37/24

CPC classification number: H01J37/241 ,  H01J37/32174 ,  H01J37/32183 ,  H03H7/40 ,  H05H1/46 ,  H05H2001/4682

Abstract: A method for matching the impedance of the output impedance of a high-frequency power supply arrangement to the impedance of a plasma load includes, in a first impedance matching mode, matching the impedance of the output impedance of the high-frequency power supply arrangement by changing the frequency of the high-frequency signal produced. If the frequency is outside a specified frequency range, in a second impedance matching mode the impedance of the output impedance of the high-frequency power supply arrangement is matched by mechanically or electrically modifying a circuit which is arranged downstream of the high-frequency signal producer.

Abstract translation: 将高频电源装置的输出阻抗的阻抗与等离子体负载的阻抗进行匹配的方法包括：在第一阻抗匹配模式中，将高频电源装置的输出阻抗的阻抗与 改变产生的高频信号的频率。 如果频率在指定频率范围之外，则在第二阻抗匹配模式中，高频电源装置的输出阻抗的阻抗通过机械地或电气地修改布置在高频信号产生器下游的电路来匹配 。

公开(公告)号：US20140021373A1

公开(公告)日：2014-01-23

申请号：US13555910

申请日：2012-07-23

Applicant: Piotr Lubicki ,  Christopher Leavitt ,  Timothy Miller ,  Bon-Woong Koo

Inventor： Piotr Lubicki ,  Christopher Leavitt ,  Timothy Miller ,  Bon-Woong Koo

IPC: G21K5/02

CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J37/241 ,  H01J37/304 ,  H01J2237/24564

Abstract: An ion implantation system and method are disclosed in which glitches in voltage are minimized by use of a modulated power supply system in the implanter. The modulated power supply system includes a traditional power supply and a control unit associated with each power supply, where the control unit is used to isolate the power supply from an electrode if a glitch or arc is detected. The control unit then restores connectivity after the glitch condition has been rectified.

Abstract translation: 公开了一种离子注入系统和方法，其中通过使用注入机中的调制电源系统来最小化电压中的毛刺。 调制电源系统包括传统电源和与每个电源相关联的控制单元，其中如果检测到毛刺或电弧，则使用控制单元将电源与电极隔离。 然后，控制单元在毛刺状态被修正之后恢复连通性。

公开(公告)号：US08546154B2

公开(公告)日：2013-10-01

申请号：US13226757

申请日：2011-09-07

Applicant: Ji-Young Shin ,  Young-Nam Kim ,  Jong-An Kim ,  Hyung-Suk Cho ,  Yu-Sin Yang

Inventor： Ji-Young Shin ,  Young-Nam Kim ,  Jong-An Kim ,  Hyung-Suk Cho ,  Yu-Sin Yang

IPC: G01R31/36 ,  H01L21/66

CPC classification number: H01J37/241 ,  H01J37/265 ,  H01J37/28 ,  H01L22/12

Abstract: An apparatus and method to inspect a defect of a substrate. Since a recess of an under layer of a substrate is darker than a projection of a top layer, a ratio of a value of a secondary electron signal (of an SEM) of the under layer to a value of the top layer may be increased to improve a pattern image used to inspect an under layer defect. Several conditions under which electron beams are irradiated may be set, and the pattern may be scanned under such conditions. Secondary electron signals may be generated according to the conditions and converted into image data to display various pattern images. Scan information on the images may be stored with positional information on the substrate. Each of scan information on the pattern images may be calculated to generate a new integrated image.

Abstract translation: 检查基板缺陷的装置和方法。 由于衬底的底层的凹部比顶层的突起更暗，所以下层的二次电子信号（SEM）的值与顶层的值的比可以增加到 改善用于检查下层缺陷的图案图像。 可以设置照射电子束的几个条件，并且可以在这种条件下扫描图案。 可以根据条件生成二次电子信号，并将其转换为图像数据以显示各种图案图像。 关于图像的扫描信息可以与基板上的位置信息一起存储。 可以计算关于图案图像的每个扫描信息以生成新的集成图像。

公开(公告)号：US20120292491A1

公开(公告)日：2012-11-22

申请号：US13295252

申请日：2011-11-14

Applicant: Marco Jan-Jaco Wieland ,  Remco Jager ,  Alexander Hendrik Vincent Van Veen ,  Stijn Willem Herman Karel Steenbrink ,  Teunis Van De Peut ,  Henk Derks

Inventor： Marco Jan-Jaco Wieland ,  Remco Jager ,  Alexander Hendrik Vincent Van Veen ,  Stijn Willem Herman Karel Steenbrink ,  Teunis Van De Peut ,  Henk Derks

IPC: G21K5/04

CPC classification number: H01J37/045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/241 ,  H01J37/3177 ,  H01J2237/0437 ,  H01J2237/2482

Abstract: The invention relates to a charged particle lithography system comprising a beam generator for generating a plurality of charged particle beamlets, a beam stop array and a modulation device. The beam stop array has a surface for blocking beamlets from reaching a target surface and an aperture array in the surface for allowing beamlets to reach the target surface. The modulation device is arranged for modulating the beamlets by deflecting or not deflecting the beamlets so that the beamlets are blocked or not blocked by the beam stop array. A surface area of the modulation device comprises an elongated beam area comprising an array of apertures and associated modulators, and a power interface area for accommodating a power arrangement for powering elements within the modulation device. The power interface area is located alongside a long side of the elongated beam area and extending in a direction substantially parallel thereto.

Abstract translation: 本发明涉及一种带电粒子光刻系统，其包括用于产生多个带电粒子子束的束发生器，束阻止阵列和调制装置。 光束停止阵列具有用于阻挡子束到达目标表面的表面和表面中的孔径阵列，以允许子束到达目标表面。 调制装置被布置用于通过偏转或不偏转子束来调制子束，使得子束被阻挡或不被阻挡阵列阻挡。 调制装置的表面区域包括细长的波束区域，其包括孔阵列和相关联的调制器，以及用于容纳为调制装置内的元件供电的功率装置的电源接口区域。 电源接口区域位于细长波束区域的长边旁边并沿与其大致平行的方向延伸。

公开(公告)号：US08168957B2

公开(公告)日：2012-05-01

申请号：US12704123

申请日：2010-02-11

Applicant: John Keller ,  Noel Smith ,  Roderick Boswell ,  Lawrence Scipioni ,  Christine Charles ,  Orson Sutherland

Inventor： John Keller ,  Noel Smith ,  Roderick Boswell ,  Lawrence Scipioni ,  Christine Charles ,  Orson Sutherland

IPC: H01J49/10 ,  H01J27/02

CPC classification number: H01J37/32183 ,  H01J27/16 ,  H01J37/08 ,  H01J37/241 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32669 ,  H01J2237/0815

Abstract: The present invention provides an inductively coupled, magnetically enhanced ion beam source, suitable to be used in conjunction with probe-forming optics to produce an ion beam without kinetic energy oscillations induced by the source.

Abstract translation: 本发明提供了一种电感耦合磁增强型离子束源，适用于与探针形成光学器件结合使用以产生离子束而不产生由该源引起的动能振荡。

公开(公告)号：US20110240602A1

公开(公告)日：2011-10-06

申请号：US12750052

申请日：2010-03-30

Applicant: Robert K. Becker ,  Matthew C. Gwinn ,  Kenneth P. Regan

Inventor： Robert K. Becker ,  Matthew C. Gwinn ,  Kenneth P. Regan

IPC: C23F1/02 ,  C23C14/46

CPC classification number: H01J37/317 ,  H01J37/08 ,  H01J37/241 ,  H01J2237/038 ,  H01J2237/0812

Abstract: The invention includes a high-voltage gas cluster ion beam (GCIB) processing system for treating a workpiece using a gas cluster ion beam. The high-voltage GCIB processing system includes a high-voltage (HV) source system that includes a high-voltage (HV) source chamber having a high-voltage (HV) nozzle subassembly, a nozzle element, and a high-voltage (HV) skimmer subassembly therein. The high-voltage gas cluster ion beam (GCIB) processing system includes a high-voltage (HV) power supply coupled to the HV nozzle subassembly and the HV skimmer subassembly. A high-voltage (HV) ionization chamber can be coupled to the HV source chamber and can include an ionizer coupled to the chamber wall by an isolation structure. In addition, a grounded GCIB processing chamber can be coupled to the HV ionization chamber by an isolation structure and can include a scanable workpiece holder.

Abstract translation: 本发明包括使用气体团簇离子束处理工件的高压气体团簇离子束（GCIB）处理系统。 高压GCIB处理系统包括高压（HV）源系统，其包括具有高压（HV）喷嘴子组件，喷嘴元件和高压（HV）的高压（HV）源室 ）撇渣器组件。 高压气体簇离子束（GCIB）处理系统包括耦合到HV喷嘴子组件和HV分离器子组件的高压（HV）电源。 高压（HV）电离室可以耦合到HV源室，并且可以包括通过隔离结构耦合到室壁的离子发生器。 此外，接地的GCIB处理室可以通过隔离结构耦合到HV电离室，并且可以包括可扫描工件保持器。

公开(公告)号：US20110062898A1

公开(公告)日：2011-03-17

申请号：US12873979

申请日：2010-09-01

Applicant: RICHARD BROWNELL TRUE

Inventor： RICHARD BROWNELL TRUE

IPC: H01J29/58

CPC classification number: H01J37/063 ,  H01J37/241 ,  H01J37/243 ,  H01J2237/063

Abstract: The invention provides an apparatus and method of switching more than one bias voltage within an electron beam tube in order to achieve electron beam cutoff. The invention is particularly useful for high-perveance electron tubes in which a large change in focus-electrode-to-cathode or anode-cathode voltage might otherwise be needed to achieve cutoff. In one embodiment of the invention, the cathode and anode bias voltages are both switched by magnitudes well within the capabilities of standard high-voltage switches to achieve beam cutoff.

Abstract translation: 本发明提供了一种在电子束管内切换多于一个偏置电压以便实现电子束切断的装置和方法。 本发明对于其中可能需要聚焦 - 电极 - 阴极或阳极 - 阴极电压的大的变化以实现截止的高电位电子管特别有用。 在本发明的一个实施例中，阴极和阳极偏置电压都在标准高压开关的能力范围内很好地切换，以实现光束截止。

公开(公告)号：US07670455B2

公开(公告)日：2010-03-02

申请号：US11825136

申请日：2007-07-02

Applicant: John Keller ,  Noel Smith ,  Roderick Boswell ,  Lawrence Scipioni ,  Christine Charles ,  Orson Sutherland

Inventor： John Keller ,  Noel Smith ,  Roderick Boswell ,  Lawrence Scipioni ,  Christine Charles ,  Orson Sutherland

IPC: H01J49/10 ,  H01J27/02

CPC classification number: H01J37/32183 ,  H01J27/16 ,  H01J37/08 ,  H01J37/241 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32669 ,  H01J2237/0815

Abstract: The present invention provides an inductively coupled, magnetically enhanced ion beam source, suitable to be used in conjunction with probe-forming optics to produce an ion beam without kinetic energy oscillations induced by the source.

Abstract translation: 本发明提供了一种电感耦合磁增强型离子束源，适用于与探针形成光学器件结合使用以产生离子束而不产生由该源引起的动能振荡。

公开(公告)号：US20080067433A1

公开(公告)日：2008-03-20

申请号：US11441609

申请日：2006-05-26

Applicant: Que Weiguo ,  Yongzhang Huang ,  John Ye ,  David Tao ,  Patrick Splinter

Inventor： Que Weiguo ,  Yongzhang Huang ,  John Ye ,  David Tao ,  Patrick Splinter

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J37/241 ,  H01J37/304 ,  H01J37/3045 ,  H01J2237/0206 ,  H01J2237/24564 ,  H01J2237/2485 ,  H01J2237/30455 ,  H01J2237/31703 ,  Y10T307/937 ,  Y10T307/951 ,  Y10T307/957

Abstract: The present invention is directed to a switch circuit and method to quickly enable or disable the ion beam to a wafer within an ion implantation system. The beam control technique may be applied to wafer doping repaint and duty factor reduction. The circuit and method may be used to quench an arc that may form between high voltage electrodes associated with an ion source to shorten the duration of the arc and mitigate non-uniform ion implantations. The circuit and method facilitates repainting the ion beam over areas where an arc was detected to recover dose loss during such arcing. A high voltage high speed switching circuit is added between each high voltage supply and its respective electrode to quickly extinguish the arc to minimize disruption of the ion beam. The high voltage switch is controlled by a trigger circuit which detects voltage or current changes to each electrode. Protection circuits for the HV switch absorb energy from reactive components and clamp any overvoltages.

Abstract translation: 本发明涉及一种用于在离子注入系统内快速启用或禁用离子束到晶片的开关电路和方法。 光束控制技术可以应用于晶片掺杂重绘和占空因数降低。 电路和方法可以用于淬灭可以在与离子源相关联的高压电极之间形成的电弧，以缩短电弧的持续时间并减轻非均匀的离子注入。 电路和方法有助于在检测到电弧的区域上重新分离离子束，以在这种电弧过程中恢复剂量损失。 在每个高压电源和其各自的电极之间增加高压高速开关电路，以快速熄灭电弧，以最小化离子束的破坏。 高压开关由触发电路控制，该触发电路检测每个电极的电压或电流变化。 HV开关的保护电路从反应部件吸收能量并夹紧任何过电压。

公开(公告)号：US07345856B2

公开(公告)日：2008-03-18

申请号：US11259549

申请日：2005-10-25

Applicant: Kenneth P. Regan

Inventor： Kenneth P. Regan

IPC: H02H3/00 ,  H02H7/00

CPC classification number: H01J37/3171 ,  H01J27/026 ,  H01J37/08 ,  H01J37/241 ,  H01J37/302 ,  H01J37/3056 ,  H01J2237/0206 ,  H01J2237/0812 ,  H02H7/003

Abstract: In an ion bean acceleration system, transient electrical arc suppression and ion beam accelerator biasing circuitry. Two-terminal circuitry, connectable in series, for suppressing arcs by automatically sensing arc conditions and switch from at least a first operating state providing a relatively low resistance electrical pathway for current between source and load terminals to at least a second, relatively high resistance electrical pathway. Selection of circuit component characteristics permits controlling the delay in returning from the second state to the first state after the arc has been suppressed.

Abstract translation: 在离子豆加速系统中，瞬态电弧抑制和离子束加速器偏置电路。 两端子电路，可串联连接，用于通过自动感测电弧条件并从至少第一工作状态切换来抑制电弧，从而提供用于源极和负载端子之间的电流的相对较低电阻的电路，至少第二相对高电阻的电 途径。 选择电路元件特性允许控制在电弧被抑制之后从第二状态返回到第一状态的延迟。