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公开(公告)号：US3825777A
公开(公告)日：1974-07-23
申请号：US33247573
申请日：1973-02-14
Applicant: IBM
Inventor： BRAUN R
CPC classification number: H01L27/22 , H01L43/065 , H03K17/90
Abstract: Offset voltage control means are provided for a semiconductor type Hall cell. The control means includes one or more auxiliary electrodes disposed at preselected spatial positions of the cell between the latter''s current and sense electrodes. The auxiliary electrode(s) when connected to a predetermined electrical supply provide an auxiliary electrical field which controls the offset voltage at the sense electrodes.
Abstract translation: 为半导体型霍尔单元提供偏移电压控制装置。 控制装置包括一个或多个辅助电极，其设置在电池的电流和感测电极之间的预选的空间位置。 辅助电极当连接到预定电源时提供辅助电场，其控制感测电极处的偏移电压。
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公开(公告)号：US3823354A
公开(公告)日：1974-07-09
申请号：US36489273
申请日：1973-05-29
Applicant: PHILIPS CORP
Inventor： JANSSEN J
CPC classification number: H01L27/22 , H01L43/065
Abstract: The invention relates to a semiconductor device having a Hall element. In order to reduce the offset voltage between the connection contacts for deriving the Hall signals and in order to increase the stability, the Hall element shows a number of subHall elements which are arranged parallel to each other. The Hall bodies of the sub-Hall elements, viewed on the surface of the semiconductor body, are situated beside each other in the semiconductor body and show different directions of current. The semiconductor body may be constituted by an epitaxial layer of ntype silicon on a substrate of p-type silicon. The Hall element may be manufactured by using methods which are generally known in manufacturing integrated circuits.
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公开(公告)号：US3448353A
公开(公告)日：1969-06-03
申请号：US3448353D
申请日：1966-11-14
Applicant: WESTINGHOUSE ELECTRIC CORP
Inventor： GALLAGHER ROBERT C , CORAK WILLIAM S
CPC classification number: H01L43/065 , H01L29/00
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公开(公告)号：US20190157342A1
公开(公告)日：2019-05-23
申请号：US16257410
申请日：2019-01-25
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Dok Won Lee , William David French , Keith Ryan Green
CPC classification number: H01L27/22 , H01L43/04 , H01L43/065 , H01L43/14
Abstract: Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.
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Patent Agency Ranking
公开(公告)号：US20190148624A1
公开(公告)日：2019-05-16
申请号：US16243801
申请日：2019-01-09
Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
Inventor： Eng Huat TOH , Ruchil Kumar JAIN , Yongshun SUN , Shyue Seng TAN
CPC classification number: H01L43/065 , G01R33/07 , H01L43/04 , H01L43/14
Abstract: A method of forming a 3D Hall effect sensor and the resulting device are provided. Embodiments include forming a p-type well in a substrate; forming a first n-type well in a first region surrounded by the p-type well in top view; forming a second n-type well in a second region surrounding the p-type well; implanting n-type dopant in the first and second n-type wells; and implanting p-type dopant in the p-type well and the first n-type well.
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公开(公告)号：US20190107578A1
公开(公告)日：2019-04-11
申请号：US16154960
申请日：2018-10-09
Applicant: Melexis Bulgaria Ltd
Inventor： Rumen MARINOV PEEV , Stoyan GEORGIEV GAYDOV
IPC: G01R31/3185 , G01R31/3187 , G01R33/07 , H01L43/04 , H01L43/06
CPC classification number: G01R31/318511 , G01D18/00 , G01D21/00 , G01R31/3187 , G01R33/0035 , G01R33/07 , H01L43/04 , H01L43/065
Abstract: A sensor device comprises a sensor connected to a first signal and responsive to an external field to produce a sensor signal, a test device connected to a second signal and electrically connected in series with the sensor by an electrical test connection providing a test signal, and a monitor circuit electrically connected to the first, second and test signals. The monitor circuit comprises a processing circuit and a determination circuit. The processing circuit is responsive to the test signal and a predetermined processing value to form a processing output signal. The determination circuit is responsive to the processing output signal to determine a diagnostic signal. A sensor circuit responsive to the sensor signal provides a sensor device signal responsive to the external field.
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公开(公告)号：US20190097126A1
公开(公告)日：2019-03-28
申请号：US16200079
申请日：2018-11-26
Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
Inventor： Shyue Seng TAN , Eng Huat TOH
CPC classification number: H01L43/065 , H01L27/22 , H01L43/04 , H01L43/14
Abstract: Methods of forming a high sensitivity Hall effect sensor having a thin Hall plate and the resulting devices are provided. Embodiments include providing a SOI substrate having a sequentially formed Si substrate and BOX and Si layers; forming a first STI structure in a first portion of the Si layer above the BOX layer, the first STI structure having a cross-shaped pattern; forming a second STI structure in a frame-shaped pattern in a second portion of the Si layer; the second STI structure formed outside and adjacent to the first STI structure; removing a portion of the Si layer between the first and second STI structures down to the BOX layer; removing the first STI structure, a cross-shaped Si layer remaining; and implanting N+ dopant ions into each end of the cross-shaped Si layer to form N+ implantation regions.
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公开(公告)号：US20190077256A1
公开(公告)日：2019-03-14
申请号：US16093741
申请日：2017-06-27
Inventor： KAZUHIRO ONAKA , SHIGEHIRO YOSHIUCHI , NORITAKA ICHINOMIYA , KIYOTAKA YAMADA
CPC classification number: B60K20/02 , G01B7/30 , G01D5/145 , G01D5/245 , G01R33/02 , G01R33/09 , H01L27/22 , H01L43/06 , H01L43/065 , H01L43/08
Abstract: A magnetic sensor includes a magneto-resistive element, a Hall element, and a detection circuit that receives a signal from the magneto-resistive element and a signal from the Hall element input thereto. The detection circuit includes an output terminal and an interrupt generation unit. The output terminal outputs, to the outside as an output signal, a signal obtained by performing to the signal input from the magneto-resistive element, at least one processing selected from amplification, analog-to-digital conversion, offset correction, and temperature-characteristics correction. The interrupt generation unit outputs an interrupt signal when the signal input from the Hall element is larger than a predetermined threshold. The magnetic sensor is high accurate and highly reliable.
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100.发明申请公开(公告)号：US20180356920A1
公开(公告)日：2018-12-13
申请号：US15778310
申请日：2017-05-25
Applicant: BOE Technology Group Co., Ltd.
Inventor： Yingwei Liu , Ning Chen
CPC classification number: G06F3/046 , G06F3/03545 , G06F2203/04103 , H01L27/1214 , H01L27/124 , H01L27/1262 , H01L27/22 , H01L43/04 , H01L43/065 , H01L43/14
Abstract: An electronic device, a manufacturing method and an operation method thereof, and an electronic copy system. Each pixel unit of the electronic device includes a Hall-effect working electrode including a first, second, third and fourth contact position, a thin film transistor, a gate line, a first common line, a second common line, a data line and a sensing line. A line connecting the first contact position and the second contact position intersects a line connecting the third contact position and the fourth contact position; the thin film transistor includes a gate electrode connected with the gate line, a source electrode connected with the data line and a drain electrode, the drain electrode and sensing line are respectively connected with the first and second contact position; the first and second common line are respectively connected with the Hall-effect working electrode through the third and fourth contact position.
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