公开(公告)号：US20230259027A1

公开(公告)日：2023-08-17

申请号：US18095221

申请日：2023-01-10

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Jun Hatakeyama ,  Masahiro Fukushima

IPC: G03F7/029 ,  G03F7/004 ,  G03F7/039 ,  G03F7/20

CPC classification number: G03F7/029 ,  G03F7/0048 ,  G03F7/0392 ,  G03F7/2006

Abstract: A resist composition comprising a sulfonim salt having an acid labile group of aromatic group-containing cyclic secondary or tertiary ester type in the cation as the acid generator exhibits a high sensitivity and reduced LWR or improved CDU.

公开(公告)号：US20230251572A1

公开(公告)日：2023-08-10

申请号：US18103787

申请日：2023-01-31

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Jun Hatakeyama ,  Masahiro Fukushima

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/20

CPC classification number: G03F7/0392 ,  G03F7/0048 ,  G03F7/2006

Abstract: A resist composition comprising a base polymer comprising repeat units having a salt structure consisting of a sulfonic acid anion bonded to a polymer backbone and a sulfonium cation having an acid labile group of aromatic group-containing cyclic secondary or tertiary ester type as the acid generator exhibits a high sensitivity and reduced LWR or improved CDU.

公开(公告)号：US20230250233A1

公开(公告)日：2023-08-10

申请号：US18107286

申请日：2023-02-08

Applicant: Nippon Kayaku Kabushiki Kaisha

Inventor： Naoki Kawamoto ,  Firyon Ko ,  Taihei Koumoto

IPC: C08G73/22 ,  C07D207/452 ,  G03F7/039 ,  H01L23/29

CPC classification number: C08G73/22 ,  C07D207/452 ,  G03F7/039 ,  H01L23/293

Abstract: An object is to provide a novel bismaleimide compound. The solution is a bismaleimide compound represented by formula (1):






wherein A1 represents a direct bond, a divalent linking group represented by formula (1-1), (1-2), or (1-3):










wherein ring a represents a benzene ring or a cyclohexane ring; X represents a direct bond or a divalent linking group; and Z represents a monovalent substituent; or a divalent linking group other than this; at least one of a plurality of A1s is formula (1-1), (1-2), or (1-3); A2 represents a divalent linking group that is a residue of a saturated aliphatic dicarboxylic acid compound, a divalent linking group that is a residue of an aromatic dicarboxylic acid compound, or a divalent linking group other than this; and when A2 is present singly, A2 is a divalent linking group that is a residue of a saturated aliphatic dicarboxylic acid compound, and when a plurality of A2s is present, at least one of A2s is a divalent linking group that is a residue of a saturated aliphatic dicarboxylic acid compound.

公开(公告)号：US20230244144A1

公开(公告)日：2023-08-03

申请号：US18070893

申请日：2022-11-29

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD.

Inventor： Jung-Hwa LEE ,  Jong-Ho NA ,  Geun HUH

IPC: G03F7/039 ,  G03F7/075 ,  C08G77/18

CPC classification number: G03F7/0395 ,  C08G77/18 ,  G03F7/0757 ,  C08G77/80

Abstract: The present invention relates to a positive-type photosensitive resin composition and to a cured film prepared therefrom The positive-type photosensitive resin composition comprises an acid-modified epoxy acrylate resin of a specific structure, so that it can provide a cured film that is excellent in flexible characteristics while having excellent film retention rate and sensitivity.

公开(公告)号：US20230244142A1

公开(公告)日：2023-08-03

申请号：US18159808

申请日：2023-01-26

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Masahiro FUKUSHIMA ,  Masayoshi SAGEHASHI ,  Tomohiro KOBAYASHI ,  Yutaro OTOMO ,  Koji HASEGAWA

IPC: G03F7/039 ,  G03F7/038 ,  C08F220/18 ,  C08F220/30 ,  C08F220/22

CPC classification number: G03F7/039 ,  G03F7/038 ,  C08F220/1806 ,  C08F220/301 ,  C08F220/302 ,  C08F220/22 ,  C08F220/1808

Abstract: Provided is a polymer, a resist composition, and a pattern forming method with high sensitivity, high resolution, and high contrast, and that can form a pattern with small variation in pattern width (LWR), and small in-plane uniformity of the pattern (CDU) with high energy ray. A polymer to generate an acid by light exposure and to change in solubility in a developing liquid with an action of the acid, the polymer including: a repeating unit represented by the following formula (A-1); and a repeating unit represented by any one or more of the following formulae (B-1) to (B-4),




wherein, M− represents a non-nucleophilic counterion, A+ represents an onium cation, n1 represents an integer of 1 or 2, n2 represents an integer of 0 to 2, n3 represents an integer of 0 to 5, n4 represents an integer of 0 to 2, and “c” represents an integer of 0 to 3.

公开(公告)号：US11709425B2

公开(公告)日：2023-07-25

申请号：US16420828

申请日：2019-05-23

Applicant: TOKYO OHKA KOGYO CO., LTD.

Inventor： Takaya Maehashi ,  Yoshitaka Komuro

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/30 ,  G03F7/027 ,  G03F7/38 ,  C07C321/28 ,  G03F7/20

CPC classification number: G03F7/0045 ,  C07C321/28 ,  G03F7/0048 ,  G03F7/0275 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2004 ,  G03F7/2059 ,  G03F7/30 ,  G03F7/38

Abstract: A resist composition including: a compound including an anion moiety and a cation moiety and represented by the following Formula (bd1); and an organic solvent having a hydroxyl group in which Rx1 to Rx4 each represent a hydrocarbon group or a hydrogen atom, or may be bonded to each other to form a ring structure; Ry1 and Ry2 each independently represent a hydrocarbon group or a hydrogen atom, or may be bonded to each other to form a ring structure; Rz1 to Rz4 each represent a hydrocarbon group or a hydrogen atom, or may be bonded to each other to form a ring structure; at least one of Rx1 to Rx4, Ry1 and Ry2 and Rz1 to Rz4 has an anionic group; and Mm+ represents an organic cation)

公开(公告)号：US20230229082A2

公开(公告)日：2023-07-20

申请号：US17543789

申请日：2021-12-07

Applicant: JSR CORPORATION

Inventor： Katsuaki NISHIKORI

IPC: G03F7/039 ,  C08F220/18 ,  C07D327/04 ,  G03F7/038 ,  C07C309/12 ,  C07C309/06 ,  C07C381/12 ,  C07D317/72 ,  G03F7/004

CPC classification number: G03F7/039 ,  C08F220/1808 ,  C07D327/04 ,  G03F7/038 ,  C07C309/12 ,  C07C309/06 ,  C08F220/1806 ,  C07C381/12 ,  C07D317/72 ,  C08F220/1812 ,  C08F220/1805 ,  C08F220/1807 ,  C08F220/1809 ,  G03F7/0045 ,  C07C2603/74

Abstract: A radiation-sensitive resin composition includes: a polymer which has a first structural unit including a phenolic hydroxyl group, and a second structural unit represented by formula (1); and a radiation-sensitive acid generating agent which has a compound represented by formula (2). R1 represents a hydrogen atom, or the like; R2 represents a hydrogen atom or the like; and R3 represents a divalent monocyclic alicyclic hydrocarbon group having 3 to 12 ring atoms. Ar1 represents a group obtained by removing (q+1) hydrogen atoms on an aromatic ring from an arene formed by condensation of at least two benzene rings; R4 represents a monovalent organic group having 1 to 20 carbon atoms; q is an integer of 0 to 7; and R5 represents a halogen atom, a hydroxy group, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms, or the like.

公开(公告)号：US20230229077A1

公开(公告)日：2023-07-20

申请号：US17648495

申请日：2022-01-20

Applicant: International Business Machines Corporation

Inventor： Gerhard Ingmar Meijer ,  Valery Weber ,  Peter Willem Jan Staar

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/038 ,  C07F5/02 ,  C07C381/12

CPC classification number: G03F7/0045 ,  G03F7/0392 ,  G03F7/0382 ,  C07F5/027 ,  C07C381/12

Abstract: A photoacid generator (PAG) anion, a photoresist composition, and a method are disclosed. The PAG anion includes a moiety, selected from an alkyl group, a monocyclic aromatic group, and a bicyclic aromatic group, that includes a carbon atom with a negative elementary charge. The PAG anion also includes an electron acceptor atom, selected from boron(III), aluminum(III), and phosphorus(V), which is covalently bonded to the carbon atom. The PAG anion also has at least one electron-withdrawing R group. The photoresist composition has a PAG that includes the PAG anion and a cation selected from triphenylsulfonium, diphenyliodonium, phenylthiolanium, and derivatives thereof. The method includes forming a layer of the photoresist composition over a material surface on a substrate, irradiating the layer to form a pattern of radiation-exposed regions, selectively removing portions of the irradiated layer to form exposed portions of the material surface, and etching or ion implanting the exposed portions.

公开(公告)号：US11703765B2

公开(公告)日：2023-07-18

申请号：US17150317

申请日：2021-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tzu-Yang Lin ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/30 ,  G03F7/36 ,  G03F7/038 ,  G03F7/039 ,  G03F7/38 ,  G03F7/40 ,  G03F7/20 ,  G03F7/32 ,  G03F7/004 ,  B82Y40/00 ,  B82Y30/00

CPC classification number: G03F7/30 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2004 ,  G03F7/32 ,  G03F7/36 ,  G03F7/38 ,  G03F7/40 ,  B82Y30/00 ,  B82Y40/00

Abstract: A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from:




The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is linking group.

公开(公告)号：US20230205082A9

公开(公告)日：2023-06-29

申请号：US17731758

申请日：2022-04-28

Applicant: JSR CORPORATION

Inventor： Ken MARUYAMA

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  C08F220/18

CPC classification number: G03F7/0045 ,  G03F7/038 ,  G03F7/039 ,  C08F220/1807 ,  C08F220/1808 ,  C08F220/1812 ,  C08F220/1818 ,  G03F7/162

Abstract: A radiation-sensitive composition includes a polymer including first and second structural units, a first compound that generates a first acid upon irradiation with radioactive ray, and a second compound that generates a second acid upon irradiation with radioactive ray. The first structural unit includes an acid-labile group, the first acid does not substantially dissociate the acid-labile group under 110° C. and a period of 1 min, the second acid dissociates the acid-labile group under 110° C. and a period of 1 min, and the second structural unit includes a monovalent group of formula (X),




where Ar1 is a group obtained by removing (a+b) hydrogen atoms from an unsubstituted aryl group, RXA is a monovalent iodine atom, an iodinated alkyl group or an iodinated alkoxy group, RXB is a monovalent organic group, a is an integer of 1 to 10, and b is an integer of 1 to 10.