公开(公告)号：US10541140B2

公开(公告)日：2020-01-21

申请号：US13981974

申请日：2012-01-26

Applicant: Thomas B. Richardson ,  Joseph A. Abys ,  Wenbo Shao ,  Chen Wang ,  Vincent Paneccasio, Jr. ,  Cai Wang ,  Xuan Lin ,  Theodore Antonellis

Inventor： Thomas B. Richardson ,  Joseph A. Abys ,  Wenbo Shao ,  Chen Wang ,  Vincent Paneccasio, Jr. ,  Cai Wang ,  Xuan Lin ,  Theodore Antonellis

IPC: H01L21/288 ,  C25D3/38 ,  C25D5/18 ,  H01L21/768 ,  C25D7/12 ,  C25D5/02

Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.

公开(公告)号：US10533262B2

公开(公告)日：2020-01-14

申请号：US16283611

申请日：2019-02-22

Applicant: EBARA CORPORATION

Inventor： Jumpei Fujikata

IPC: C25D17/06 ,  C25D17/00 ,  C25D7/12 ,  C25D21/12 ,  H01L21/288 ,  H01L21/67 ,  H01L21/687 ,  H01L21/768 ,  H01L23/00

Abstract: Provided is a plating apparatus for plating a substrate by using a substrate holder including an elastic projection that seals a to-be-plated surface of the substrate, the plating apparatus comprising a measurement device configured to measure a deformed state of the elastic projection by measuring at least either one of a compression amount of the elastic projection and load applied to the elastic projection at a time when the substrate physically contacts the elastic projection of the substrate holder; and a controlling device configured to make a judgment on the basis of the measured deformed state as to whether sealing by the elastic projection is normal.

公开(公告)号：US10513780B2

公开(公告)日：2019-12-24

申请号：US15778242

申请日：2016-11-28

Applicant: Atotech Deutschland GmbH

Inventor： Andreas Walter ,  Christof Suchentrunk ,  Thomas Beck ,  Gerhard Steinberger ,  Holger Bera ,  Heiko Brunner ,  Bernd Froese

IPC: C23C18/44 ,  C23C18/16 ,  H05K3/18 ,  H01L21/288 ,  H05K3/24 ,  C23C18/32

Abstract: The invention relates to an aqueous plating bath composition and a method for depositing a palladium layer by electroless plating onto a substrate. The aqueous plating bath composition according to the invention comprises a source for palladium ions, a reducing agent for palladium ions and an unsaturated compound. The aqueous plating bath composition according to the invention has an improved stability against undesired decomposition due to the unsaturated compounds while keeping the deposition rate for palladium at the desired satisfying value. The aqueous plating bath composition has also a prolonged life time. The unsaturated compounds of the invention allow for adjusting the deposition rate to a satisfying range over the bath life time and for electrolessly depositing palladium layers at lower temperatures.

公开(公告)号：US20190385877A1

公开(公告)日：2019-12-19

申请号：US16556371

申请日：2019-08-30

Applicant: Carbon, Inc.

Inventor： Bob E. Feller ,  James M. Ian Bennett

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/288 ,  H01L21/768

Abstract: A system for retaining a spin-coating fluid when forming a thin film includes a rotatable chuck; a substrate on the rotatable chuck, the substrate having an interior area and an outer perimeter edge; and a fluid retention wall on the outer perimeter edge of the substrate, the fluid retention wall being configured to retain a spin-coating fluid deposited on the interior area of the substrate during rotation of the rotatable chuck.

公开(公告)号：US10508358B2

公开(公告)日：2019-12-17

申请号：US15489089

申请日：2017-04-17

Applicant: Government of the United States of America, as Represented by the Secretary of Commerce

Inventor： Daniel Josell ,  Thomas P. Moffat

IPC: C25D21/12 ,  C25D7/12 ,  C25D3/12 ,  C25D3/48 ,  C25D5/02 ,  C25D5/18 ,  H01L21/288

Abstract: Forming a transition zone terminated superconformal filling in a recess includes: providing an electrodeposition composition including: a metal electrolyte including a plurality of metal ions, solvent, and suppressor; providing the article including: a field surface and the recess that includes a distal position and a proximate position; exposing the recess to the electrodeposition composition; potentiodynamically controlling an electric potential of the recess with a potential wave form; bifurcating the recess into an active metal deposition region and a passive region; forming a transition zone; decreasing the electric potential of the recess by the potential wave form; progressively moving the transition zone closer to the field surface and away from the distal position; and reducing the metal ions and depositing the metal in the active metal deposition region and not in the passive region to form the transition zone terminated superconformal filling in the recess of the substrate.

公开(公告)号：US10468355B2

公开(公告)日：2019-11-05

申请号：US15966691

申请日：2018-04-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Kai-Chiang Wu ,  Chen-Hua Yu ,  Ching-Feng Yang ,  Meng-Tse Chen

IPC: H01L23/552 ,  H01L21/56 ,  H01L21/3105 ,  H01L23/66 ,  H01L21/3205 ,  H01L21/288 ,  H01L23/00 ,  H01L23/538 ,  H01L23/31 ,  H01L21/683 ,  H01L21/768 ,  H01L25/10 ,  H01L21/78

Abstract: A method includes forming a metal post over a first dielectric layer, attaching a second dielectric layer over the first dielectric layer, encapsulating a device die, the second dielectric layer, a shielding structure, and the metal post in an encapsulating material, planarizing the encapsulating material to reveal the device die, the shielding structure, and the metal post, and forming an antenna electrically coupling to the device die. The antenna has a portion vertically aligned to a portion of the device die.

公开(公告)号：US20190333891A1

公开(公告)日：2019-10-31

申请号：US15965081

申请日：2018-04-27

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Eiji KUROSE

IPC: H01L23/00 ,  H01L21/78 ,  H01L21/56 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/285 ,  H01L21/288

Abstract: Implementations of a method of forming semiconductor packages may include: providing a wafer having a plurality of devices, etching one or more trenches on a first side of the wafer between each of the plurality of devices, applying a molding compound to the first side of the wafer to fill the one or more trenches; grinding a second side of the wafer to a desired thickness, and exposing the molding compound included in the one or more trenches. The method may include etching the second side of the wafer to expose a height of the molding compound forming one or more steps extending from the wafer, applying a back metallization to a second side of the wafer, and singulating the wafer at the one or more steps to form a plurality of semiconductor packages. The one or more steps may extend from a base of the back metallization.

公开(公告)号：US10460945B2

公开(公告)日：2019-10-29

申请号：US14358659

申请日：2012-11-19

Applicant: ALCHIMER

Inventor： Frederic Raynal

IPC: C25D17/00 ,  H01L21/288 ,  H01L21/768 ,  H01L23/48 ,  H01L21/67 ,  C25D5/02 ,  C25D17/06 ,  C23C18/16

Abstract: The invention relates to a machine (1) adapted to metallize a cavity of a semi-conductive or conductive substrate such as a structure of the through silicon via type, according to a metallization process comprising the steps consisting of: a) depositing an insulating dielectric layer in the cavity, b) depositing a barrier layer to diffusion of the filling metal, c) filling the cavity by electrodeposition of metal, preferably copper, and d) carrying out annealing of the substrate, characterized in that it comprises a series of wet-processing modules (10-60) configured to conduct steps a), b) and c) by wet-processing in a chemical bath (B) and at least one additional module (70) adapted to conduct annealing step d) of the substrate (S) such that the machine (1) is capable of executing the entire metallization process of the cavity.

公开(公告)号：US20190309436A1

公开(公告)日：2019-10-10

申请号：US16307908

申请日：2017-04-14

Applicant: EBARA CORPORATION

Inventor： Masashi SHIMOYAMA ,  Yuji ARAKI ,  Mizuki NAGAI ,  Jumpei FUJIKATA

IPC: C25D21/12 ,  C25D7/12 ,  H01L21/288

Abstract: There are provided a plating apparatus and a plating method that allow determining an appropriate replacement timing of a diaphragm. The plating apparatus includes an anode bath, a cathode bath, a diaphragm, an analyzer, and a control device. The anode bath holds a plating solution and an insoluble anode. The cathode bath holds a plating solution containing an additive and a substrate. The diaphragm separates the plating solution held in the anode bath from the plating solution held in the cathode bath. The analyzer is configured to analyze a concentration of the additive in the plating solution in the cathode bath at every predetermined time interval. The control device is configured to calculate an actual consumption of the additive during the predetermined period based on the concentration of the additive analyzed at the every predetermined time interval. The control device includes a memory that stores an expected consumption of the additive during the predetermined period. The control device is configured to determine whether a difference between the actual consumption and the expected consumption is equal to or more than a predetermined value or not.

公开(公告)号：US10435578B2

公开(公告)日：2019-10-08

申请号：US14890667

申请日：2014-05-06

Applicant: SPGPrints B.V.

Inventor： Josué Jean Philippe Valeton ,  Robert-Jan Abbel

IPC: C09D11/52 ,  C08K5/098 ,  H01L51/00 ,  C09D11/03 ,  C09D11/38 ,  H01L21/288 ,  H05K3/12 ,  H01L51/42 ,  H01L51/50

Abstract: A printing ink composition includes a metal salt of a metal ion and a counter ion, and a viscosity adjusting agent. The metal ion is present as a metal complex of the metal ion and the viscosity adjusting agent, the viscosity adjusting agent includes at least one functional ligand, where the functional ligand may be a monofunctional ligand having one functional group and multifunctional ligands having more than one functional groups.