摘要:
There are provided a nitride semiconductor light emitting device and a method of manufacturing the same, the device including: a first conductivity type nitride semiconductor layer formed on a substrate; an active layer formed on the first conductivity type nitride semiconductor layer; a second conductivity type nitride semiconductor layer formed on the active layer; a light-transmitting low refractive index layer formed on the second conductivity type nitride semiconductor layer, the light-transmitting low refractive index layer having a plurality of openings through which the second conductivity type nitride semiconductor layer is partially exposed and formed of a material having a refractive index lower than a refractive index of the second conductivity type nitride semiconductor layer; and a high conductivity ohmic contact layer formed on the light-transmitting low refractive index layer and connected to the second conductivity type nitride semiconductor layer through the openings of the light-transmitting low refractive index layer.
摘要:
A semiconductor device that includes a clock buffer, which generates an internal clock signal in response to a clock signal and a complementary clock signal if the semiconductor device is operating in a first mode and generates the internal clock signal in response to the clock signal and a reference voltage if the semiconductor device is operating in a second mode.
摘要:
A termination circuit for a transmission line may include an input node, a pull-down circuit, and a pull-up circuit. The input node receives an input signal over the transmission line. The pull-down circuit is coupled between the input node and a first reference voltage, and the pull-down circuit may be configured to provide an electrical path between the first reference voltage and the input node responsive to the input signal having a first voltage level. The pull-up circuit is coupled between the input node and a second reference voltage, and the pull-up circuit is configured to provide an electrical path between the second reference voltage and the input node responsive to the input signal having a second voltage level. More particularly, the first reference voltage is less than the second reference voltage, and the first voltage level is greater than the second voltage level. Related methods are also discussed.
摘要:
The memory device includes a memory cell array, and an output buffer receiving data addressed from the memory cell array and outputting the data based on a latency signal. A latency circuit selectively associates at least one transfer signal with at least one sampling signal based on CAS latency information to create a desired timing relationship between the associated sampling and transfer signals. The latency circuit stores read information in accordance with at least one of the sampling signals, and generates a latency signal based on the transfer signal associated with the sampling signal used in storing the read information.
摘要:
Disclosed is a delay locked-loop circuit comprising a phase detector for detecting a phase difference between an external clock signal and an internal clock signal, a delay unit controller for generating a control signal in response to output of the phase detector, and a variable delay unit for delaying the external clock in response to the control signal to synchronize the internal clock with the external clock, the variable delay unit comprising a first group of delay cells used at or above a predetermined frequency, a second group of delay cells used with the first group of delay cells at or below a predetermined frequency, switch transistors for connecting/disconnecting the first group of delay cells and the second group of delay cells to/from a first output line and a second output line of the variable delay unit, respectively, in response to the control signal, and a switch for connecting/disconnecting the first output line to/from the second output line in response to a delay use signal representing the use of one of the delay cells in the first group.
摘要:
An input signal provided to an input terminal is terminated by coupling the input terminal to a ground voltage through a pull down transistor if the input signal at the input terminal is at a “high” level and coupling the input terminal to a power voltage through a pull up transistor if the input signal at the input terminal is at a “low” level. Termination circuits are provided including on die termination circuits.
摘要:
Provided are an on-chip termination apparatus in a semiconductor integrated circuit, and a method for controlling the same. The on-chip termination apparatus is installed in a semiconductor integrated circuit that has an output driver for outputting data to the outside via a pad and a data input circuit for receiving data from the outside via the pad. The on-chip termination apparatus includes an on-chip terminator including at least one terminal resistor electrically connected to the pad; and a terminator control circuit for turning on or off the on-chip terminator in response to an output enable signal that enables or disables the data output circuit, wherein the terminator control circuit turns off the on-chip terminator in the event that the data output circuit is enabled. Therefore, the on-chip termination apparatus is controlled by an output enable signal, thereby reducing timing loss, thus enabling a system to operate at high speed.
摘要:
Provided are a method and an apparatus for repairing a memory cell in a memory test system. A test device detects a fail address by testing a memory device according to a test command, and temporarily stores the fail address in a fail address memory (FAM). The fail address is transmitted to the memory device according to a fail address transmission mode, is temporarily stored in a temporary fail address storage of the memory device, and is then stored in an anti-fuse array, which is a non-volatile storage device. To secure the reliability of data, stored data can be read to verify the data and a verification result can be transmitted in series or in parallel to the test device.
摘要:
Disclosed are an apparatus and a method for swapping headers for authenticating policy based domains and tracing paths at the time of high-reliable data plane transmission. The method includes receiving packets forwarded through predetermined paths, confirming whether the received packets are normal packets, determining whether the path identification information corresponding to the paths of the received packets is present in a header information storage unit of a domain receiving the packets, swapping the headers included in the packets to swapping headers of the header information storage unit by using the identification information if it is determined that the path identification information is present, and correcting the path tracing information. By this configuration, degradation in data plane performance due to the lengths of headers can be solved.
摘要:
Provided are a method and an apparatus for repairing a memory cell in a memory test system. A test device detects a fail address by testing a memory device according to a test command, and temporarily stores the fail address in a fail address memory (FAM). The fail address is transmitted to the memory device according to a fail address transmission mode, is temporarily stored in a temporary fail address storage of the memory device, and is then stored in an anti-fuse array, which is a non-volatile storage device. To secure the reliability of data, stored data can be read to verify the data and a verification result can be transmitted in series or in parallel to the test device.