Abstract:
A light absorbent for forming an organic anti-reflective layer, represented by the following formula 1 or formula 2, is provided: wherein A represents a substituted or unsubstituted, linear or branched, saturated tetravalent hydrocarbon group, a substituted or unsubstituted, linear or branched, saturated hydrocarbon group and containing one or more heteroatoms, a substituted or unsubstituted aromatic group, a substituted or unsubstituted heteroaromatic group, a substituted or unsubstituted alicyclic group, a substituted or unsubstituted heteroalicyclic group, a substituted or unsubstituted diaryl ether, a substituted or unsubstituted diaryl sulfide, a substituted or unsubstituted diaryl sulfoxide, a substituted or unsubstituted diaryl ketone, or a substituted or unsubstituted diaryl bisphenol A; R1, R2, and R3 each independently represent a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group a substituted or unsubstituted aryl group, a substituted or unsubstituted acetal group, or a substituted or unsubstituted hydroxyl group; and n is an integer from 2 to 500.
Abstract translation:提供用于形成由下式1或式2表示的有机抗反射层的光吸收剂:其中A表示取代或未取代的直链或支链饱和四价烃基,取代或未取代的直链或支链 饱和烃基,含有一个或多个杂原子,取代或未取代的芳族基团,取代或未取代的杂芳族基团,取代或未取代的脂环族基团,取代或未取代的杂脂族基团,取代或未取代的二芳基醚,取代或未取代的 二芳基硫醚,取代或未取代的二芳基亚砜,取代或未取代的二芳基酮,或取代或未取代的二芳基双酚A; R 1,R 2和R 3各自独立地表示氢原子,卤素原子,取代或未取代的烷基,取代或未取代的芳基,取代或未取代的缩醛基或取代或未取代的羟基; n为2〜500的整数。
Abstract:
In various embodiments, the present disclosure may provide a storage node. In various implementations, the storage node may include a bottom electrode having a non-planar bottom surface that conforms with and is connected to a non-planar top surface of a diode electrode of a memory device. The storage node may further include a phase change layer on top of a bottom diode and a top electrode on a top surface of a phase change layer.
Abstract:
In a semiconductor device and a method of manufacturing the semiconductor device, a plug and a channel structure are formed. The plug fills an opening and the channel structure extends upwardly from the plug. The channel structure has a substantially vertical sidewall. The opening is formed through an insulation structure located on a substrate. The plug and the channel structure comprise a material in a single crystalline state that is changed from an amorphous state by an irradiation of a laser beam. The channel structure is doped with impurities such as boron, phosphorus or arsenic.
Abstract:
Provided are a non-volatile memory device and a method of operating the non-volatile memory device. The non-volatile memory device includes a switching device and a storage node connected to the switching device, wherein the storage node comprises: a first electrode connected to the switching device; a chalcogenide material layer formed on the first electrode; and a second electrode formed on the chalcogenide material layer, and one of the first and second electrodes comprises an electrode contact layer formed adjacent to a limited region of the chalcogenide material layer, and a property of the electrode region adjacent to the chalcogenide material layer is changed reversibly according to the direction in which a current is applied, thereby changing between a high resistance state and a low resistance state.
Abstract:
A multifunctional handler system for electrical testing of semiconductor devices is provided. The multifunctional handler system comprises: (1) a semiconductor device processing section comprising a loading unit including a buffer, a sorting unit including a separate marking machine, and a unloading unit; (2) a semiconductor device testing section, separate from the semiconductor device processing section, comprises a test chamber, the test chamber is separated into two or more test spaces, and the test spaces of the test chamber include a second chamber positioned at a lower position, a first chamber positioned above the second chamber, and pipelines for connecting the first and second chambers to each other; and (3) a host computer which is independently connected to the semiconductor device processing section and the semiconductor device testing section and controls tray information, test results, marking information, and test program information.
Abstract:
A fabrication method and a related semiconductor device are disclosed. The method includes; forming a gate structure on a semiconductor substrate, the gate structure comprising a stacked combination a gate dielectric pattern, a gate, a capping layer pattern and an epitaxial blocking layer pattern, forming sidewall spacers on the gate structure covering at least sidewall portions of the gate dielectric pattern, the gate, and the capping layer pattern, wherein the epitaxial blocking layer pattern is exposed on a top surface of the gate structure, forming an elevated epitaxial layer on the semiconductor substrate outside the gate structure using a selective epitaxial growth process, and forming elevated source/drain regions by applying an ion implantation process to the semiconductor substrate following formation of the elevated epitaxial layer, wherein the epitaxial blocking layer is a nitrogen enhanced layer relative to the capping layer pattern.
Abstract:
A developing unit and an electro-photographic image forming apparatus having the same are provid. The developing unit includes a housing and a photosensitive medium, which has an end exposed to the outer side of the housing and that is rotatably mounted on the housing. A photosensitive medium shutter shields the exposed part of the photosensitive medium when a door is opened and exposes the exposed part of the photosensitive medium to the outside when the door is closed. The photosensitive medium shutter includes a first shielding plate that is moved between a first location where the exposed part is shielded and a second location where the exposed part is exposed to the outside of the housing. A second shielding plate is spread at the first location with respect to the first shielding plate and is overlapped with the first shielding plate at the second location.
Abstract:
An inspecting apparatus for a semiconductor device having a match plate; a contact module combined with the match plate, including a radiation unit contacting a semiconductor device, and a test unit pressing leads of the semiconductor device; and a thermally conductive pad installed on a contacting face of the radiation unit of the contact module, to transfer heat from the semiconductor device to the radiation unit of the contact module. The present invention provides an inspecting apparatus for semiconductor devices that improves reliability of testing for durability of semiconductor devices against heat, and minimizes damage to the semiconductor devices during testing.
Abstract:
Provided is a VECSEL capable of achieving an excellent efficiency of a SHG crystal and being manufactured in a compact size. The VECSEL includes a laser chip, an external mirror, an SHG crystal, a lens element, and a wavelength selective mirror. The laser chip generates a first wavelength light, and the external mirror is spaced from the laser chip to face the front side of the laser chip. The SHG crystal is located between the external mirror and the laser chip to double the frequency of the first wavelength light to make a second wavelength light. The lens element is located between the SHG crystal and the laser chip to allow the first wavelength light generated from the laser chip to converge at the SHG crystal, and the wavelength selective mirror is located between the SHG crystal and the lens element to transmit the first wavelength light and reflect the second wavelength light to the external mirror.
Abstract:
A waste toner collecting apparatus separates waste toner remaining on an outer circumferential surface of a photosensitive medium when a visible image is transferred thereon and stores the separated waste toner. An electrophotographic image forming device includes the waste toner collecting apparatus. The waste toner collecting apparatus includes a cleaning blade that separates the waste toner from a photosensitive medium by scratching the outer circumferential surface of the photosensitive medium. A waste toner container stores the waste toner. The waste toner separated from the photosensitive medium is transported to the waste toner container through a waste toner passage. An agitating plate reciprocates inside the waste toner passage to prevent accumulation of the waste toner.