公开(公告)号：US20100248488A1

公开(公告)日：2010-09-30

申请号：US12711061

申请日：2010-02-23

Applicant: Ankur Agarwal ,  Kenneth S. Collins ,  Shahid Rauf ,  Kartik Ramaswamy ,  Thorsten B. Lill

Inventor： Ankur Agarwal ,  Kenneth S. Collins ,  Shahid Rauf ,  Kartik Ramaswamy ,  Thorsten B. Lill

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32706

Abstract: Radial distribution of etch rate is controlled by controlling the respective duty cycles of pulsed VHF source power applied to the ceiling and pulsed HF or MF bias power on the workpiece. Net average electrical charging of the workpiece is controlled by providing an electronegative process gas and controlling the voltage of a positive DC pulse on the workpiece applied during pulse off times of the pulsed VHF source power.

Abstract translation: 通过控制施加到天花板的脉冲VHF源功率和工件上的脉冲HF或MF偏置功率的相应占空比来控制蚀刻速率的径向分布。 通过提供电负性处理气体并控制在脉冲VHF源功率的脉冲关闭期间施加的工件上的正DC脉冲的电压来控制工件的净平均充电。

公开(公告)号：US07732309B2

公开(公告)日：2010-06-08

申请号：US11608357

申请日：2006-12-08

Applicant: Shijian Li ,  Kartik Ramaswamy ,  Biagio Gallo ,  Dong Hyung Lee ,  Majeed A. Foad

Inventor： Shijian Li ,  Kartik Ramaswamy ,  Biagio Gallo ,  Dong Hyung Lee ,  Majeed A. Foad

IPC: H01L21/425

CPC classification number: H01L21/2236 ,  H01L29/66575

Abstract: Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, supplying a gas mixture including a reacting gas and a reducing gas into the chamber, and implanting ions from the gas mixture into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a hydrogen containing reducing gas into the chamber, and implanting ions from the gas mixture into the substrate.

Abstract translation: 提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。 在一个实施例中，通过等离子体浸入离子注入工艺将离子注入衬底的方法包括将衬底提供到处理室中，将包括反应气体和还原气体的气体混合物供应到室中，以及从气体中注入离子 混合物进入底物。 在另一个实施例中，该方法包括将衬底提供到处理室中，将包括使气体和含氢还原气体反应的气体混合物供应到腔室中，以及将离子从气体混合物注入到衬底中。

公开(公告)号：US20100018648A1

公开(公告)日：2010-01-28

申请号：US12178032

申请日：2008-07-23

Applicant: KENNETH S. COLLINS ,  Douglas A. Buchberger, JR. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Hiroji Hanawa ,  Jennifer Y. Sun ,  Andrew Nguyen ,  Thorsten B. Lill ,  Meihua Shen

Inventor： KENNETH S. COLLINS ,  Douglas A. Buchberger, JR. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Hiroji Hanawa ,  Jennifer Y. Sun ,  Andrew Nguyen ,  Thorsten B. Lill ,  Meihua Shen

IPC: H01L21/3065

CPC classification number: H01J37/32642 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32623 ,  H01J2237/2001 ,  H01L21/6833

Abstract: In an electrostatic chuck, RF bias power is separately applied to a workpiece and to a process kit collar surrounding the workpiece. At least one variable impedance element governed by a system controller adjusts the apportionment of RF bias power between the workpiece and the process kit collar, allowing dynamic adjustment of the plasma sheath electric field at the extreme edge of the workpiece, for optimum electric field uniformity under varying plasma conditions, for example.

Abstract translation: 在静电卡盘中，RF偏置功率分别施加到工件和围绕工件的处理套件套环。 由系统控制器控制的至少一个可变阻抗元件调节工件和工艺套件套环之间的RF偏置功率的分配，允许动态调整工件最末端处的等离子体护套电场，以获得最佳的电场均匀度 改变等离子体条件。

公开(公告)号：US20090294275A1

公开(公告)日：2009-12-03

申请号：US12129318

申请日：2008-05-29

Applicant: Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

Inventor： Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

IPC: B01J19/08

CPC classification number: H01L21/67069 ,  H01L21/67253

Abstract: A method of processing a workpiece in a plasma reactor chamber in which plasma RF source and bias power is delivered into the chamber, by sensing fluctuations in a plasma parameter such as load impedance or reflected power at one of the generators, and modulating the output of the other generator to minimize the fluctuation.

Abstract translation: 一种在等离子体反应室中处理工件的方法，其中等离子体RF源和偏置功率通过感测诸如负载阻抗或其中一个发生器处的反射功率的等离子体参数的波动而输送到室中，并且调制 另一台发电机使波动最小化。

公开(公告)号：US20090284156A1

公开(公告)日：2009-11-19

申请号：US12465319

申请日：2009-05-13

Applicant: SAMER BANNA ,  VALENTIN TODOROW ,  KARTIK RAMASWAMY

Inventor： SAMER BANNA ,  VALENTIN TODOROW ,  KARTIK RAMASWAMY

IPC: H05B31/26

CPC classification number: H01J37/32146 ,  H01J37/321 ,  H01J37/32155 ,  H01J37/32174

Abstract: Embodiments of the present invention generally provide methods and apparatus for pulsed plasma processing over a wide process window. In some embodiments, an apparatus may include an RF power supply having frequency tuning and a matching network coupled to the RF power supply that share a common sensor for reading reflected RF power reflected back to the RF power supply. In some embodiments, an apparatus may include an RF power supply having frequency tuning and a matching network coupled to the RF power supply that share a common sensor for reading reflected RF power reflected back to the RF power supply and a common controller for tuning each of the RF power supply and the matching network.

Abstract translation: 本发明的实施例一般提供了用于在宽处理窗口上脉冲等离子体处理的方法和装置。 在一些实施例中，装置可以包括具有频率调谐的RF电源和耦合到RF电源的匹配网络，共享用于读取反射回RF电源的反射RF功率的公共传感器。 在一些实施例中，装置可以包括具有频率调谐的RF电源和耦合到RF电源的匹配网络，共享用于读取反射回RF电源的反射RF功率的公共传感器，以及用于调谐每个 射频电源和匹配网络。

公开(公告)号：US20090257927A1

公开(公告)日：2009-10-15

申请号：US12371864

申请日：2009-02-16

Applicant: KARTIK RAMASWAMY ,  HIROJI HANAWA ,  KENNETH S. COLLINS ,  LAWRENCE WONG ,  ANDREW NGUYEN ,  STEVEN LANE

Inventor： KARTIK RAMASWAMY ,  HIROJI HANAWA ,  KENNETH S. COLLINS ,  LAWRENCE WONG ,  ANDREW NGUYEN ,  STEVEN LANE

IPC: H01P1/20 ,  H01P7/04 ,  H05H1/24

CPC classification number: H01P7/04

Abstract: A method for constructing a distributed element coaxial resonator includes folding a coaxial resonator to provide a structure having a decreased physical length compared to its electrical length. In various embodiments, the resonator is tuned to affect a standing wave when excited by a signal of a specific wavelength. The coaxial resonator includes inner, middle and outer conductor sections, wherein the characteristic impedance is maintained throughout the resonator.

Abstract translation: 一种用于构造分布式元件同轴谐振器的方法包括折叠同轴谐振器以提供与其电长度相比具有减小的物理长度的结构。 在各种实施例中，当由特定波长的信号激发时，谐振器被调谐以影响驻波。 同轴谐振器包括内部，中部和外部导体部分，其中在整个谐振器中保持特征阻抗。

公开(公告)号：US20090195777A1

公开(公告)日：2009-08-06

申请号：US12417289

申请日：2009-04-02

Applicant: Kartik Ramaswamy ,  Seon-Mee Cho ,  Tsutomu Tanaka ,  Majeed A. Foad

Inventor： Kartik Ramaswamy ,  Seon-Mee Cho ,  Tsutomu Tanaka ,  Majeed A. Foad

IPC: G01J3/28 ,  H01J49/00 ,  B05C11/00 ,  H01L21/3065

CPC classification number: C23C14/48 ,  C23C14/54 ,  H01J37/321 ,  H01J37/32412 ,  H01J37/32935

Abstract: The present invention generally provides methods and apparatus for controlling ion dosage in real time during plasma processes. In one embodiment, ion dosages may be controlled using in-situ measurement of the plasma from a mass distribution sensor combined with in-situ measurement from an RF probe.

Abstract translation: 本发明通常提供了在等离子体处理期间实时控制离子剂量的方法和装置。 在一个实施方案中，离子剂量可以使用来自与来自RF探针的原位测量组合的质量分布传感器等离子体进行原位测量来控制。

公开(公告)号：US07465478B2

公开(公告)日：2008-12-16

申请号：US11046660

申请日：2005-01-28

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo

IPC: C23C14/48 ,  B05D3/06 ,  H05H1/24 ,  H05H1/46 ,  H05H1/02

CPC classification number: H01J37/321 ,  H01J37/32082 ,  Y10S438/906

Abstract: A method of processing a workpiece includes placing the workpiece on a workpiece support pedestal in a main chamber with a gas distribution showerhead, introducing a process gas into a remote plasma source chamber and generating a plasma in the remote plasma source chamber, transporting plasma-generated species from the remote plasma source chamber to the gas distribution showerhead so as to distribute the plasma-generated species into the main chamber through the gas distribution showerhead, and applying plasma RF power into the main chamber.

Abstract translation: 一种处理工件的方法包括将工件放置在具有气体分配喷头的主室中的工件支撑基座上，将工艺气体引入远程等离子体源室并在远程等离子体源室中产生等离子体，传输等离子体产生的 从远程等离子体源室到气体分配淋浴喷头的物质，以便通过气体分配喷头将等离子体产生的物质分配到主室中，并将等离子体RF功率施加到主室中。

公开(公告)号：US07430984B2

公开(公告)日：2008-10-07

申请号：US10285092

申请日：2002-10-30

Applicant: Hiroji Hanawa ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Andrew Nguyen ,  Gonzalo Antonio Monroy

Inventor： Hiroji Hanawa ,  Kartik Ramaswamy ,  Kenneth S. Collins ,  Andrew Nguyen ,  Gonzalo Antonio Monroy

IPC: C23C16/00 ,  C23F1/00

CPC classification number: H01J37/32082 ,  H01J37/321 ,  H01J37/32174

Abstract: A plasma reactor for processing a workpiece, the plasma reactor comprising an enclosure, a workpiece support within the enclosure facing an overlying portion of the enclosure, the workpiece support and the overlying portion of the enclosure defining a process region therebetween extending generally across the diameter of said wafer support, the enclosure having a first and second pairs of openings therethrough, the two openings of each of the first and second pairs being near generally opposite sides of said workpiece support, a first hollow conduit outside of the process region and connected to the first pair of openings, providing a first torroidal path extending through the conduit and across the process region, a second hollow conduit outside of the process region and connected to the second pair of openings, providing a second torroidal path extending through the conduit and across the process region, first and second plasma source power applicators inductively coupled to the interiors of the first and second hollow conduits, respectively, each of the first and second plasma source power applicators being capable of maintaining a plasma in a respective one of the first and second torroidal paths, an RF power generator providing an RF output current, a current switching network connected between the RF power generator and the first and second plasma source power applicators for applying respective periodic time segments of RF output current to respective ones of said first and second plasma source power applicators.

Abstract translation: 一种用于处理工件的等离子体反应器，所述等离子体反应器包括外壳，所述外壳内的工件支撑件面向所述外壳的上部，所述工件支撑件和所述外壳的上部部分限定了其间的工艺区域， 所述晶片支撑件，所述外壳具有穿过其中的第一和第二对开口，所述第一和第二对中的每一个的两个开口靠近所述工件支撑件的大致相对的两侧，在所述工艺区域外部并连接到所述工件区域的第一中空导管 第一对开口，提供延伸穿过导管并跨过处理区域的第一环形路径，在处理区域外部的第二中空导管，并连接到第二对开口，提供延伸穿过导管并跨过管道的第二环形路径 工艺区域，第一和第二等离子体源功率施加器电感耦合到 第一和第二空心管道的裂口分别地，第一和第二等离子体源功率施加器中的每一个能够维持第一和第二环形路径中的相应一个中的等离子体，提供RF输出电流的RF发电机， 连接在RF功率发生器和第一和第二等离子体源功率施加器之间的电流开关网络，用于将RF输出电流的相应的周期性时间段施加到所述第一和第二等离子体源功率施加器中的相应的等离子体源功率施加器。

公开(公告)号：US20080179011A1

公开(公告)日：2008-07-31

申请号：US11734040

申请日：2007-04-11

Applicant: KENNETH S. COLLINS ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: C23F1/00 ,  C23C16/00

CPC classification number: C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

Abstract: A plasma reactor includes an electrostatic chuck in the chamber for supporting the workpiece, a ceiling electrode facing the electrostatic chuck and an ESC electrode in the electrostatic chuck with an electrostatic clamping voltage supply coupled to the ESC electrode. The reactor further includes at least a first RF bias source of an LF or HF frequency coupled to the pedestal electrode, and first and second VHF power sources of different frequencies coupled to the same or to different ones of the electrodes. The first and second VHF power sources are of sufficiently high and sufficiently low frequencies, respectively, to produce center-high and center-low plasma distribution non-uniformities, respectively, in the chamber.

Abstract translation: 等离子体反应器包括用于支撑工件的室中的静电卡盘，面向静电卡盘的天花板电极和静电卡盘中的ESC电极，其具有耦合到ESC电极的静电钳位电压源。 反应器还包括耦合到基座电极的LF或HF频率的至少第一RF偏置源，以及耦合到相同或不同电极的不同频率的第一和第二VHF电源。 第一和第二VHF电源分别具有足够高和足够低的频率，以分别在腔室中产生中心高和中心低等离子体分布不均匀性。